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Transient diffusion of Ga in amorphous silicon (1994)

Zagwijn, P. M. ; Huisman, W. J. ; Polman, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 5719-5723

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560–830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357079

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