ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation (1987)

Fathy, D. ; Holland, O. W. ; White, C. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1337-1339

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thin epitaxial layers of Ge-Si alloys have been formed on Si(100) substrates by steam oxidation of Ge-implanted samples. During the oxidation, the Ge is totally piled up ahead of the SiO2/Si interface. This segregation of Ge leads to the formation of a distinct, Ge-rich layer which is epitaxial with the underlying Si. The thickness of the Ge layer is dependent on the implantation dose. This layer and its two bounding interfaces with the oxide and Si are characterized as a function of the implantation dose and energy, using Rutherford backscattering and high-resolution transmission electron microscopy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98671

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit