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  • 1
    Electronic Resource
    Electronic Resource
    Novel oxidation process in Ge+-implanted Si and its effect on oxidation kinetics (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal oxidation of Si is shown to be substantially affected by the implantation of Ge+ ions. A unique morphology develops during steam oxidation due to the rejection of Ge from the oxide at the growth interface. The Ge pile-up leads to the formation of a distinct layer of almost pure Ge between the oxide and the underlying Si. Oxidation rates are enhanced due to the presence of this film which is shown to increase the interfacial reaction rate. This increase is attributed to a decrease in the binding energy of Si atoms at the interface as a result of alloying with the Ge film. A model is proposed to account for the enhanced oxidation kinetics and is shown to be in good agreement with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98385
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of silicides by rapid thermal annealing over polycrystalline silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 631-634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of titanium silicide by rapid thermal annealing in nitrogen and argon ambients over polycrystalline silicon. A sheet resistance of about 3 Ω per square for a 300-A(ring) Ti layer was achieved after 900 °C/10-s annealing treatment, which decreased to about 2 Ω per square after 1100 °C/10-s treatment. The silicides were found to be stable during rapid thermal annealing up to 1100 °C/10 s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. An external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form during rapid thermal annealing treatment in the nitrogen ambient, but the surface remained clean in the argon ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337404
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of rapid thermal annealing in ion-implanted silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 905-909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Activation of implanted dopant in Si is investigated as a function of ion energy during rapid thermal annealing (RTA). It is shown that the fraction of dopant incorporated on the lattice site by RTA decreases as the implant energy increases. This is attributed to clustering or precipitation of the dopant during RTA as a result of fast diffusion of the dopant in the amorphous layer produced by implantation. The increased thickness of the amorphous layer at higher implant energies allows sufficient time for clustering before the amorphous layer recrystallizes. Similar behavior is observed for electrically inactive impurities. In this work, the diffusion of Ge was investigated to gain insight into the transient, greatly enhanced diffusion of certain dopants during RTA that has been reported. No enhancement in the diffusion of Ge was observed which is shown to be consistent with a model proposed to explain the enhanced diffusion for dopants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336561
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing of Sb+-ion-implanted Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5326-5330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of Sb+-implanted Si(100) during rapid thermal annealing was studied at different annealing temperatures and implantation doses. The range of dose was chosen so that the concentration of implanted Sb spanned the limit of solid solubility in Si. It is shown that the behavior of the Sb in excess of solubility limits is dependent on both the heating cycle and the implantation dose. Under certain conditions the excess Sb migrates to the surface where it forms a thin continuous film. However, under different conditions Sb precipitates and remains in the bulk. In the latter case, an anomalous loss of Sb from substitutional solid solution occurs. The mechanisms responsible for the precipitation behavior and its effect on dopant activation are discussed. Transmission electron microscopy and Rutherford backscattering were used to characterize the samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340397
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of ion beam mixed silicides on Si (100) at elevated substrate temperatures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 297-301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy and Rutherford backscattering spectroscopy have been used to study the structure and composition of intermixed regions between thin films of Ni deposited on single crystals of (100) silicon. A comparison has been made between thin films of silicide which have been either thermally grown or ion-beam reacted at different substrate temperatures. It is shown that not only can high temperature, silicide phases be produced at lower temperatures by ion-beam mixing, but also the structure of the Si/silicide interface and the morphology of the silicide depend on whether the mixing was induced thermally or by ion irradiation. It was found that depending on the temperature of the substrate, Ni3Si2, NiSi, NiSi2, were observed to form. Ion mixing at 500 °C led to the formation of a unique morphological structure. At this temperature, two distinct silicide layers formed (NiSi and NiSi2) with the silicon-rich phase at the surface away from the Si/silicide interface. Premixing by ion irradiation before thermal treatment of the samples was found to influence the detailed microstructure of the reacted region. The premixing produced less oxidation of nickel during thermal treatment compared to that observed on samples which were reacted solely by thermal processing; it also resulted in a more uniform, planar interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335675
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of ultrathin, buried oxides in Si by O+ ion implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 674-676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is presented for forming a silicon-on-insulator material with an ultrathin buried oxide by utilizing the separation by implantation of oxygen or SIMOX method. It overcomes the problem of oxide continuity encountered during standard SIMOX processing when the O+-implanted dose is scaled down to decrease the thickness of the buried oxide below ∼0.1 μm. To promote the formation of ultrathin buried oxides (during post-implantation annealing), the implantation process was modified to produce a microstructure which promotes coalescence of the oxygen into a continuous layer. This was accomplished by slightly modifying the standard ((approximately-greater-than)500 °C) process so that the final increment of the dose is implanted near room temperature. This dose is chosen to selectively amorphize the region near the ion's range which will yield a high-defective layer during subsequent annealing. It is shown that this layer, which can consist of polysilicon, provides a template or guide upon which the oxide forms. Buried oxides prepared in this way are shown to be continuous and without Si inclusions while the standard process yields a broken layer with severe discontinuities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117802
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1337-1339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin epitaxial layers of Ge-Si alloys have been formed on Si(100) substrates by steam oxidation of Ge-implanted samples. During the oxidation, the Ge is totally piled up ahead of the SiO2/Si interface. This segregation of Ge leads to the formation of a distinct, Ge-rich layer which is epitaxial with the underlying Si. The thickness of the Ge layer is dependent on the implantation dose. This layer and its two bounding interfaces with the oxide and Si are characterized as a function of the implantation dose and energy, using Rutherford backscattering and high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98671
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ^1^6O
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 10-11 (1985), S. 574-579 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(85)90311-8
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  • 9
    Electronic Resource
    Electronic Resource
    Dose rate effects in silicon during heavy ion irradiation
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 10-11 (1985), S. 565-568 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(85)90309-X
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  • 10
    Electronic Resource
    Electronic Resource
    Morphological instabilities and ion beam mixing in Ge
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 7-8 (1985), S. 639-644 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(85)90447-1
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