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  • Articles  (61)
  • Articles: DFG German National Licenses  (61)
  • porous silicon  (61)
  • 2000-2004  (61)
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  • Articles  (61)
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  • Articles: DFG German National Licenses  (61)
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  • 1
    Electronic Resource
    Electronic Resource
    Porosified Silicon Wafer Structures Impregnated With Platinum Anti-Tumor Compounds: Fabrication, Characterization, and Diffusion Studies (2000)
    Springer
    Biomedical microdevices 2 (2000), S. 265-272 
    Details
    ISSN: 1572-8781
    Keywords: porous silicon ; cis-platin ; drug delivery ; calcium phosphate ; carbo-platin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract In this work, the incorporation and characterization of cis-platin (cis-diammine dichloroplatinum(II)), carbo-platin [cis-diammine(cyclobutane-1,1-dicarboxylato] platinum(II)), and Pt(en)Cl2 (ethylenediamminedichloro platinum(II)) within layers of calcium phosphate on porous Si/Si substrates are described. These materials have been characterized by scanning electron microscopy, secondary ion mass spectrometry, and X-ray energy dispersive spectroscopy. The diffusion of platinum species from the doped calcium phosphate layers has also been investigated by UV-visible absorption spectrometry and inductively-coupled plasma spectroscopy. The influence of initial platinum concentration, the impact of thermal annealing of the calcium phosphate/porous Si/Si matrix, as well as the effect of varying the ligand coordination sphere of the Pt complex on its ability to be delivered to the surroundings have also been analyzed. For the case of cis-platin, it is found that increasing the concentration of platinum complex in the electrolyte during cathodic growth of calcium phosphate results in a relatively greater concentration of Pt incorporated into the calcium phosphate layers and a larger amount of Pt which subsequently can be delivered to the surrounding medium upon exposure to solvent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009951121205
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  • 2
    Electronic Resource
    Electronic Resource
    Nature of the Silicon-Animal Cell Interface (2000)
    Springer
    Journal of porous materials 7 (2000), S. 191-195 
    Details
    ISSN: 1573-4854
    Keywords: cell growth ; porous silicon ; cytotoxicity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The paper reports the results of the study of cell culture growth at the surface of porous silicon. They show that porous and poly(nano)crystalline Si offer significant advantages over bulk Si surfaces for cell adherence and viability: these materials do not require coating with substances such as polylysine to support cell growth; porous Si is light-addressable because of photoluminescence and photovoltaic effects noted [Unal and Bayliss, J. Appl. Phys. 80, 3532 (1996)], allowing the potential for optical data transfer and less susceptibility to interference from external electronic equipment; finally nanostructured coatings can be applied to most object shapes, giving flexibility in their application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009686704506
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  • 3
    Electronic Resource
    Electronic Resource
    Light Emission from Highly Reflective Porous Silicon Multilayer Structures (2000)
    Springer
    Journal of porous materials 7 (2000), S. 209-213 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon photoluminescence and electroluminescence can be controlled by periodically modulating the material porosity to form high quality multilayer stacks and microcavities. Important issues not yet fully addressed are (a) the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and that the low porosity layers are highly absorbing at short wavelengths, and (b) whether the quality of such microcavities could be sufficient to support lasing. Using both experimental and theoretical techniques, the emission and reflection properties of different porous silicon single and multilayer structures have been investigated in order to understand further and exploit the nature of light propagation within them.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009694906324
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  • 4
    Electronic Resource
    Electronic Resource
    Conduction and Luminescent Properties of Wet Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 103-106 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; quenching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Carrier transport and photoluminescence-quenching mechanisms in reverse-biased p-type porous silicon in contact with an aqueous electrolyte are investigated. Concerning transport mechanisms investigation, experiments are based on the study of the photo-induced current as a function of the porous layer thickness. The liquid-impregnated porous silicon skeleton is found under equipotential conditions. Transport of electrons (supplied by the substrate) in porous silicon is shown to be dominated by a diffusion process. Photoluminescence-quenching is investigated by using a reverse-biased p-type porous silicon illuminated at 365 and 809 nm simultaneoulsy. The first illumination generate photoluminescence and the second supplies carriers in the substrate. A progressive photoluminescence-quenching has been observed, under a constant applied voltage, by increasing progressively the electron concentration in the porous layer. This original experiment allows to reject the hypothesis of an electric-field-induced separation of carriers as the photoluminescence-quenching mechanism in wet porous silicon, while it strongly supports the mechanism based on Auger recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009670300872
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  • 5
    Electronic Resource
    Electronic Resource
    Processing of Infrared Spectroscopy Data on Thin Porous Films Using Software “Prospect” (2000)
    Springer
    Journal of porous materials 7 (2000), S. 239-242 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; interference fringes ; infrared-spectroscoy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Here we present the software utility “ProSpect” which allows to process and interpret the data of infrared spectrophotometry studies of thin porous films. These spectra are often complicated by the presence of interference fringes. The program allows to remove fringes and thus enhance the intensity of useful IR bands as well as calculate optical parameters of the films (medium thickness value, refractive index, deviation of the thickness from medium value). Application of ProSpect in analysis of the FT-IR spectra of non-uniform porous silicon films is illustrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009607409050
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  • 6
    Electronic Resource
    Electronic Resource
    Electro-, Photo- and Scanning Tunneling—Luminescence Studies of Efficient Light-Emitting Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 125-130 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; scanning tunneling microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon films as used in efficient blue-green electroluminescent devices (internal efficiency about 0.1%) were studied by scanning tunneling microscopy light emission spectroscopy (STMLES) as well as photoluminescence (PL) and electroluminescence (EL) spectroscopy. Areas of the n-type porous Si surfaces with small particles of about 5 nm dimensions gave STMLE, but areas with larger structures gave no emission. Clear STMLE spectra gave a peak at 630 nm, quite different from the EL peak at 500 nm. Whereas the PL peak at 700 nm was consistent with the STM indication of quantised entities, the EL seemed more readily explicable in terms of defects at the metal contact barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009627913593
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  • 7
    Electronic Resource
    Electronic Resource
    Studies on Gold/Porous Silicon/Crystalline Silicon Junctions (2000)
    Springer
    Journal of porous materials 7 (2000), S. 299-301 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; Schottky emission ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical transport in Gold/porous silicon/crystalline silicon junctions has been studied. The junctions are found to improve when the porous silicon is exposed to a hydrogen plasma before depositing the top metal. The hydrogen passivated junctions exhibited higher current levels and emitted light at lower voltages as compared to the unhydrogenated ones. Internal photoemission measurements were carried out to investigate the gold/porous silicon barrier. The barrier height determined from the Fowler plot is independent of the top material. The temperature dependence of the barrier height is similar to that of the crystalline silicon energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009604703115
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  • 8
    Electronic Resource
    Electronic Resource
    Raman Scattering from Metal-Deposited Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 397-400 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; Raman spectroscopy ; immersion plating ; silver
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Raman scattering from porous silicon layer into which silver is immersion-plated was studied. Ag-deposited samples show extra Raman bands. Heat treatment of the Ag-deposited samples results in a great decrease in such Raman bands. Also dipping in hydrofluoric acid solution causes a spectral change. Some comments on the assignment of the Raman peaks of the Ag-deposited porous silicon are given, and the structure of porous silicon on which metal is immersion-plated is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009603524921
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of Porous Silicon Filter Structures with Different Properties on Small Areas (2000)
    Springer
    Journal of porous materials 7 (2000), S. 223-225 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; patterning ; photolythography dielectric filters ; reactive ion etching (RIE) ; microoptics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009651224071
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  • 10
    Electronic Resource
    Electronic Resource
    Probing Carrier Transport in Porous Silicon with Synchrotron Radiation (2000)
    Springer
    Journal of porous materials 7 (2000), S. 115-118 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; synchrotron radiation ; coulomb blocade
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate that photo-electron emission excited by X-UV synchrotron radiation can be used as a “contactless” probe of the gross conduction processes in porous silicon. Moreover we demonstrate that this approach reveals the underlying conduction geometry. We show that conduction in porous silicon is to some degree controlled by percolation phenomena and finally present data which support the notion that the fundamental blocking process may be Coulomb Blockade [P.A. Lee, Physica B 189, 1–5 (1993); D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119–2120 (1994)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009667627705
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