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  • 1
    Electronic Resource
    Electronic Resource
    Chemical states of iodine in iodine-doped polystyrene (1996)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 34 (1996), S. 587-590 
    Details
    ISSN: 0887-6266
    Keywords: iodine-doped polystyrene ; charge-transfer (CT) complex ; XPS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: No abstract.
    Additional Material: 4 Ill.
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  • 2
    Electronic Resource
    Electronic Resource
    Structure-conductivity relationships of iodine-doped polyaniline (1997)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 35 (1997), S. 1993-2001 
    Details
    ISSN: 0887-6266
    Keywords: polyaniline ; conducting polymer ; iodine doping ; XPS ; FTIR ; TGA ; WAXD ; Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Polyaniline, synthesized by using potassium dichromate as the oxidant, was doped with iodine in order to increase its electrical conductivity. The iodine-doped polyanilines attained a conductivity of 1.83 × 10-3 S/cm, which was about eight orders of magnitude greater than that of intrinsic polyaniline. The iodine-doped polyanilines did not absorb moisture readily when compared to the protonic-acid-doped polyanilines. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopy (XPS) results indicated that iodine-doping reactions occurred at the N-atoms in the quinoid structural units of the polyaniline molecular chains and consequently formed the charge transfer complexes. The iodine in the iodine-doped polyanilines existed mainly in the forms of I-3 and I-5 anions. As the doping level increased, the relative content of I-5 anions increased. Thermogravimetric analysis (TGA) results showed that there was about 6 wt % of iodine strongly bonded to the polyanilines since they would not evolve even at the structural decomposition temperatures of the polymer backbones. Wide-angle x-ray diffraction spectroscopy (WAXD) results revealed that the intrinsic polyaniline was an amorphous polymer but the regularity of polyaniline chains increased after iodine-doping. The iodine-doped polyanilines also showed a decrease in thermal stability. © 1997 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 35: 1993-2001, 1997
    Additional Material: 5 Ill.
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  • 3
    Electronic Resource
    Electronic Resource
    Surface analytical techniques (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 53-70 
    Details
    ISSN: 1057-9257
    Keywords: AES ; XPS ; SIMS ; SNMS ; laser Raman microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), sputter neutral mass spectroscopy (SNMS) and laser Raman spectroscopy are all described. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. SIMS and SNMS can be performed together and can detect smaller surface concentrations. Laser Raman spectroscopy is useful for determining molecular bonding. Techniques which give topographic information, such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM), have not been considered.
    Additional Material: 18 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050202
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  • 4
    Electronic Resource
    Electronic Resource
    A Study of the Chemical Bonding and Microstructure of Ion Beam-deposited CNx Films Including an XPS C 1s Peak Simulation (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 629-642 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; FTIR ; carbon nitride ; thin film ; simulation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The chemical bonding and microstructure of dual ion beam-deposited CNx films with nitrogen contents in the range 20-33 at.% have been examined by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). The FTIR spectra together with other published data have been used to construct a model microstructure of the CNx films. The XPS N 1s peak is composed of two components corresponding to N-sp2 C and N-sp3 C bonds. Using the quantified N 1s data and making certain assumptions, the model microstructure has been used as the basis of a C 1s peak simulation in which nine C components have been combined. At an N content of 20 at.% the simulation agrees well with the experimentally recorded XPS C 1s peak. The FTIR spectra, XPS N 1s peak shape and C 1s peak simulations support a microstructure of N substitution into an amorphous sp2/sp3 hybridized carbon structure. Above an N content of ∽20%, a new (nitrile-like) chemical form also emerges in the material, its abundance increasing with N content. It is proposed that this new structure occurs due to the presence, in the surface region of the condensing film, of C≡N dimers, which are formed when a C atom is surrounded by many N atoms. This molecule becomes trapped in the material and bonds to atoms at neighbouring sites. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 12 Ill.
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  • 5
    Electronic Resource
    Electronic Resource
    Study of the Chemical Composition and Microstructure of Ion Beam-deposited CNx Films Including an XPS C 1s Peak Simulation (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 301-314 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; FTIR ; carbon nitride ; thin film ; simulation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The chemical composition and microstructure of dual ion beam-deposited CNx films with nitrogen contents in the range 20-33 at.% have been examined by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). The FTIR spectra together with other published data have been used to construct a model microstructure of the CNx films. The XPS N 1s peak is composed of two components corresponding to N-sp2 C and N-sp3 C bonds. Using the quantified N 1s data and making certain assumptions, the model microstructure has been used as the basis of a C 1s peak simulation in which nine C components have been combined. At an N content of 20 at.% the simulation agrees well with the experimentally recorded XPS C 1s peak. The FTIR spectra, XPS N 1s peak shape and C 1s peak simulations support a chemical structure of N substitution in an amorphous sp2/sp3 hybridized carbon structure. Above an N content of ∽20%, a new (nitrile-like) chemical form also emerges in the material, its abundance increasing with N content. It is proposed that this new structure occurs due to the presence, in the surface region of the condensing film, of C—N dimers, which are formed when a C atom is surrounded by many N atoms. This molecule becomes trapped in the material and bonds to atoms at neighbouring sites. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 12 Ill.
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  • 6
    Electronic Resource
    Electronic Resource
    XPS, XANES and ToF-SIMS Characterization of Reactively Magnetron-sputtered Carbon Nitride FilmsPresented at ECASIA '95 Montreux, Switzerland, October 1995. (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 315-323 
    Details
    ISSN: 0142-2421
    Keywords: carbon nitride ; PVD ; hybridization ; AES ; XPS ; XANES ; ToF-SIMS ; magnetron-sputtered film ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The existence of β-C3N4 with hardness characteristics similar or better than diamond was predicted in 1990 by Liu and Cohen. Many studies have since been devoted to the synthesis of this compound. In the present work, carbon nitride films were deposited by various reactive magnetron sputtering processes of graphite targets in pure nitrogen and characterized by AES, XPS, x-ray adsorption near-edge structure (XANES) and static time-of-flight SIMS (ToF-SIMS). Various bonding states (single and double bond) are observed between carbon and nitrogen atoms and between carbon atoms but there is no evidence in the XANES results for either the presence of carbon-nitrogen triple bonds or a pyridine-like ring structure. Surface N/C ratios were estimated to be close to 0.3. Carbon K-edge XANES lineshapes, the C 1s plasmon-loss structure and the calculated density (2.2 g cm-3) indicate that the films are similar to diamond-like carbon without long-range ordering. The presence of CxNy fragments with 1≤y〈4 and the low abundance of CHx and CHxNy fragments in ToF-SIMS spectra further confirm that the carbon atoms do not adopt a graphite or pyridine-like cyclic two-dimensional structure and that the films are not significantly hydrogenated. A three-phase solid solution model is proposed for the composition of the films: a ‘free’ carbon phase, an sp3 - carbon-nitrided phase and an sp2 - carbon-nitrided phase. The relative proportion of these phases is influenced by the deposition conditions. Enhanced plasma ionization reactive magnetron sputtering leads to higher density and to a higher fraction of the sp3 carbon phase. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 10 Ill.
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  • 7
    Electronic Resource
    Electronic Resource
    Incorporation of Surface Topography in the XPS Analysis of Curved or Rough Samples Covered by Thin Multilayers (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 741-746 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; coating thickness ; global analysis ; multilayers ; curvature ; roughness ; atomic force microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Approaches are described for the analysis of XPS signals from samples comprising thin conformal coatings on substrates with non-ideal surface topography. In particular, attention is focused on arbitrarily shaped rough or curved substrates. Relations are derived for the relative x-ray photoelectron intensities emitted from various elements in such non-ideal samples. The surface topography of arbitrarily rough samples is analysed by atomic force microscopy to provide a frequency histogram of the local slopes, which is incorporated into a global, multi-element analysis method for interpretation of the observed XPS elemental intensities. An analogous approach is used for the analysis of curved samples. Our algorithms also enable simultaneous analysis of successively coated multilayer structures. When the elemental composition of the individual layers is known, the fit procedure enables determination of the thickness values of single-layer and multilayer coatings. The range of validity of the theory is discussed. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
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  • 8
    Electronic Resource
    Electronic Resource
    XPS Studies of Oxide Growth and Segregation in Aluminium-Silicon Alloys (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 809-816 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; Al-Si alloy ; segregation ; oxide growth ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The oxidation of three aluminium-silicon alloys has been studied as a function of temperature. At temperatures below 473 K a thin passivating oxide film is formed. At higher temperatures the segregation of the trace element magnesium to the surface is observed where it dominates the subsequent oxidation behaviour. In the absence of oxygen, magnesium segregation does not occur. From these results it is concluded that at temperatures in excess of 473 K magnesium segregation controls oxide growth and also that the degree of segregation is temperature dependent. Segregation effects are also observed for sodium, which appears to be concentration limited, and silicon, which is confined to the alumina-rich regions close to the metal surface where the silicon is also oxidized. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 3 Ill.
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  • 9
    Electronic Resource
    Electronic Resource
    Control of the stoichiometry in the deposition of cobalt oxides on SiO2 (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 62-71 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; ISS ; CoO ; Co3O4 ; interface effects ; cobalt oxide ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Both CoO and Co3O4 overlayers have been deposited on SiO2 by evaporation from metallic Co and subsequent oxidation with oxygen and a plasma of oxygen. The combined use of ion scattering spectroscopy and XPS shows that both oxides grow in the form of small particles on the surface of SiO2. Ion scattering spectroscopy also shows that the surface of cobalt oxide exposed to a plasma of oxygen is enriched in oxygen ions with respect to the surface of the cobalt oxide formed by exposure to oxygen. The Co 2p spectra corresponding to the deposits obtained by oxidation with O2 are characteristic of CoO, while those corresponding to the deposits obtained after oxidation with a plasma are typical of Co3O4. Moreover, the OCo/Co ratios determined by XPS and factor analysis indicate the formation of CoO stoichiometry in the former case and Co3O4 stoichiometry in the latter. It has also been observed that no shift in either binding energy or modified Auger parameter α′ appears as a function of coverage. This absence of shifts is interpreted as a consequence of the type of screening mechanism that dominates the relaxation of the photoholes in these oxides. © 1998 John Wiley & Sons, Ltd.
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  • 10
    Electronic Resource
    Electronic Resource
    Initial adsorption of trimethylsilane on Ge(100) surfaces (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 113-120 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; x-ray photoelectron spectroscopy ; Ge ; adsorption ; trimethylsilane ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of -150±3°C and x-ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core-level C 1s, Si 2p and Ge 3d photoelectrons were monitored after each dosing. It was observed that the C-C bonds are the dominant species formed at the low doses of TMSiH. The second abundant species at the low coverage is the C-Ge bond. This indicated dissociative adsorption of TMSiH molecules onto a clean Ge(100) surface, which is similar to the adsorption of TMSiH molecules onto an Si(100) surface. As the dose increases, the Si-C species gradually increase due to physisorbed TMSiH on top of the C-C- and C-Ge-covered surface. This study clearly reveals the growth processes of TMSiH on a Ge(100) surface. The electronegativities of C, Si and Ge and the bond strengths of C-C, C-Si and C-Ge were invoked to discuss the initial formation of C-C and C-Ge on the Ge(100) surface. © 1998 John Wiley & Sons, Ltd.
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