ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (153)
  • 68.55  (153)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Economics
Collection
  • Articles  (153)
Source
Keywords
Publisher
Years
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Economics
  • Physics  (155)
  • 1
    Electronic Resource
    Electronic Resource
    Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy (1979)
    Springer
    Applied physics 18 (1979), S. 353-356 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p/n junctions in Ge-doped GaAs consisting ofp-type layers with extremely smooth surfaces and low compensationn-type layers were fabricated by molecular beam epitaxy (MBE). During growth the site occupancy of Ge was controlled by varying the substrate temperature fromT s 〈500°C (n-type layers) toT s 〉600°C (p-type layers) at aconstant As4 to Ga flux ratio of 2. This yields stable growth conditions for the generation of Ga and As vacancies, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899688
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth (1979)
    Springer
    Applied physics 19 (1979), S. 63-70 
    Details
    ISSN: 1432-0630
    Keywords: 65 ; 82.65 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10−2 monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900540
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620296
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Strain analysis and optical characterization of LPE InGaAsP laser-confining layers (1982)
    Springer
    Applied physics 27 (1982), S. 213-218 
    Details
    ISSN: 1432-0630
    Keywords: 71.25 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In1−x Ga x AS y P1−y /InP with smallx andy are studied. The measured elastic strain is proportional to the lattice mismatch within certain critical limits; as much as ∼78% of the mismatch strain is found to be accommodated elastically under both compression and tension. The near-band edge absorption and photoluminescence measurements yield the free electron and hole recombination probability and the compositional dependence of the energy gap at low temperature. The influence of the lattice mismatch on the optical properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619082
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and titanium silicide formation (1985)
    Springer
    Applied physics 38 (1985), S. 23-29 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 73.40 Cg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Titanium silcides have been formed on monocrystalline (111) silicon substrates by rapid thermal annealing (RTA) of Ti layers deposited on Si at 700–800 °C for 1 to 240 s. The phase composition is dependent on the annealing temperature and time: at 700° and 750 °C for short annealing, TiSi and TiSi2 are observed. At 800 °C and by increasing the exposure time at 700 ° and 750 °C, only TiSi2 is detected. The growth of the total silicide thickness is found to be faster for RTA than for conventional furnace annealing and governed by two different mechanisms depending on the phases formed: in the range 700–750 °C, and 750–800 °C, activation-energy values of 2.6 ± 0.2 and 1.5 ±0.2 eV are found, respectively. For a thin deposited Ti layer (〈 100 nm), the whole Ti is finally transformed into TiSi2 with 20@ μω cm resistivity. For thicker Ti thicknesses, titanium oxide stops the reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618722
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD (1985)
    Springer
    Applied physics 38 (1985), S. 221-226 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 42.60 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A theoretical analysis of and experimental observations on a parallel incident laser-induced deposition rate are reported. Our theory predicts that the maximum deposition rate depends on the photo-traveling length, the scattering cross section of the reactant gases and their partial pressure. This result is applied to SiO2 deposition using monosilane and nitrous oxide for reactant gases, and is compared with experimental results. We show that the deposition rate of SiO2 films as a function of the incident light power and the partial pressure of reactant gases predicted by the present theory well explains our experimental results. A supply-limitation phenomenon of the reactant gases and a method of estimating deposition efficiencies are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616500
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Modelling ion-assisted deposition of CeO2 films (1986)
    Springer
    Applied physics 40 (1986), S. 209-213 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 77.55 ; 68.99
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The theory presented explains quantitatively the experimentally observed increase in film density of a vapor-deposited CeO2 film when bombarded during growth with low-energy O 2 + ions. The density enhancement is expressed in terms of the yields for recoil implantation of surface atoms, ion incorporation and sputtering, which have been determined by employing a three-dimensional Monte Carlo cascade calculation. Ion-to-vapor flux ratios between 0 and 1.4 and O+ ion energies between 25 and 600 eV have been examined. The density shows an almost linear increase with the ratio of ion-to-vapor fluxes. An optimum O+ ion energy for densification is found at about 200 eV which is in agreement with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Metal silicides with energetic pulses (1986)
    Springer
    Applied physics 40 (1986), S. 183-190 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20H ; 79.20D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617402
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...