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  • Articles  (7,629)
  • Chemistry  (7,542)
  • 61.70  (39)
  • 72.20  (30)
  • 73.60  (23)
  • 1985-1989  (6,541)
  • 1950-1954  (1,088)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7,629)
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  • Articles  (7,629)
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  • 1
    Electronic Resource
    Electronic Resource
    Double anion antisite in GaAs - the simplest member of EL2 family? (1985)
    Springer
    Applied physics 38 (1985), S. 253-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties of an aggregate composed of two nearest-neighbour AsGa defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two AsGa defects. If one of the two electrons is excited into theT 2 resonant state of individual AsGa then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (AsGa)2 aggregate is the best candidate for EL2 centre in GaAs crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616060
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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  • 4
    Electronic Resource
    Electronic Resource
    Dislocations in high-purity germanium and its relation to γ-ray detector performance (1986)
    Springer
    Applied physics 40 (1986), S. 257-261 
    Details
    ISSN: 1432-0630
    Keywords: 29 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of dislocations in high-purity germanium influences the resolution of radiation detectors made from it. The four dislocation types found with electron microscopy are studied by DLTS to understand their influence on trapping in a γ-ray detector. Only three DLTS bands were found in commercially produced material. Statistical correlation with the detector resolution reported by various detector manufacturers finally yielded useful specifications with respect to the crystallographic perfection to be met in detector grade HP-Ge. The specification limits are discussed in view of the DLTS data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616604
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  • 5
    Electronic Resource
    Electronic Resource
    A high-intensity58Co slow-positron beam and applications to probe near-surface disorder (1987)
    Springer
    Applied physics 43 (1987), S. 269-274 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties and performance of a magnetically-guided, high-intensity, ultra-high-vacuum slow-positron beam are reviewed. Basic positron behaviour in solids is briefly described. Results from various58Coβ + sources in conjunction with a backscattering W(110) moderator are presented. We discuss research applications to probe depth distribution of open-volume lattice defects. Two experimental methods capable of yielding information on defects within ∼500 Å and ∼1 μm from the surface, respectively, are considered. Results are shown on defect distribution in ion implanted metals and semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635182
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of multilayered targets ballistic effects (1987)
    Springer
    Applied physics 42 (1987), S. 193-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620598
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  • 7
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum mechanical treatment of the escape probability from traps in thermally stimulated processes (1985)
    Springer
    Applied physics 37 (1985), S. 165-170 
    Details
    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617501
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  • 9
    Electronic Resource
    Electronic Resource
    Electrophotographic multi-layer plates based on vacuum-evaporated cadmium sulphide and polyethylene (1985)
    Springer
    Applied physics 37 (1985), S. 243-246 
    Details
    ISSN: 1432-0630
    Keywords: 68.20 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit fieldμ 0τ. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614824
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  • 10
    Electronic Resource
    Electronic Resource
    Surface space-charge layer analysis in semi-insulating GaAs containing deep levels in bulk (1986)
    Springer
    Applied physics 40 (1986), S. 219-225 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A computer simulation study of space-charge layers at the surface of semiinsulating GaAs containing deep EL2 and Cr centers in bulk is presented. Substantial influence of the deep bulk levels on the main characteristics of the surface space charge layers, is demonstrated. The special features of these characteristics and the conditions of their arising are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616598
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  • 11
    Electronic Resource
    Electronic Resource
    Noise current spectrum in submicrometer samples (1986)
    Springer
    Applied physics 41 (1986), S. 197-199 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise current spectral density in submicrometer samples is computed using the Monte Carlo method. The normalized spectral density is found to decrease with sample length and increase with the field. The high-field noise is like shot noise and increases with current in agreement with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616840
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  • 12
    Electronic Resource
    Electronic Resource
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 13
    Electronic Resource
    Electronic Resource
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 14
    Electronic Resource
    Electronic Resource
    Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS (1988)
    Springer
    Applied physics 45 (1988), S. 77-81 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermally induced electrical activation of boron implanted in silicon at fluences ≦1013 cm−2 was studied by the combination of secondary ion mass spectrometry (SIMS) and pulsed capacitance voltage (PCV). After annealing at 900°C for 30 min boron is completely ionized and the contribution of electrically active defects to the electrical profile is negligible. For partly annealed samples (T〈900°C) the degree of electrical activation of boron decreases with increasing boron concentration due to the presence of residual defects. The experimental data can be described qualitatively by the first-order kinetics if the influence of residual crystal defects on the electrical activation is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618767
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  • 15
    Electronic Resource
    Electronic Resource
    Nitrogen-oxygen complexes in Czochralski-silicon (1988)
    Springer
    Applied physics 46 (1988), S. 73-76 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared spectra of nitrogen doped Czochralski-grown silicon indicate absorption lines in addition to the well-known lines of local modes of oxygen, carbon and nitrogen centers. The most prominent lines of them can be shown to be correlated with certain oxygen and nitrogen concentrations. These lines are, therefore, thought to arise from N-O complexes and are discussed in the context of an O-induced disturbance of N2-pair vibrations. The results of preliminary investigations on the stability of such complexes are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615911
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  • 16
    Electronic Resource
    Electronic Resource
    Mechanism for NonlinearI – V Behaviour and the Temperature Dependence of Threshold Switching in the Se-Te-Sn System (1988)
    Springer
    Applied physics 46 (1988), S. 299-303 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The nonlinearI – V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vh with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI – V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210350
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  • 17
    Electronic Resource
    Electronic Resource
    Relationship between optical and structural properties of hydrogenated amorphous silicon (1989)
    Springer
    Applied physics 48 (1989), S. 295-304 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 73.60 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618889
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  • 18
    Electronic Resource
    Electronic Resource
    Introduction to defect bistability (1989)
    Springer
    Applied physics 48 (1989), S. 3-9 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617758
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  • 19
    Electronic Resource
    Electronic Resource
    Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon (1989)
    Springer
    Applied physics 48 (1989), S. 41-47 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617762
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  • 20
    Electronic Resource
    Electronic Resource
    Tunneling from dislocation cores in silicon Schottky diodes (1985)
    Springer
    Applied physics 36 (1985), S. 55-61 
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    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Selfquenching of the photocapacitance and of the reverse photocurrent in Schottky diodes made on dislocatedn-type silicon was discovered. A phenomenological model explaining this, rather unexpected, phenomenon is proposed. The model requires an introduction of a new mechanism of diode conductance via dislocation lines. Crucial for this mechanism is the possibility of electron tunneling from dislocation to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616462
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  • 21
    Electronic Resource
    Electronic Resource
    Point defects, diffusion processes, and swirl defect formation in silicon (1985)
    Springer
    Applied physics 37 (1985), S. 1-17 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
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    URL: http://dx.doi.org/10.1007/BF00617863
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  • 22
    Electronic Resource
    Electronic Resource
    Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells (1985)
    Springer
    Applied physics 37 (1985), S. 153-164 
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    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617500
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  • 23
    Electronic Resource
    Electronic Resource
    Position dependence of average electron velocity in a submicrometer GaAs channel (1985)
    Springer
    Applied physics 38 (1985), S. 57-58 
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    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 μm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618727
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  • 24
    Electronic Resource
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    Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction (1986)
    Springer
    Applied physics 39 (1986), S. 191-195 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
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    Focused ion beam gallium implantation into silicon (1986)
    Springer
    Applied physics 39 (1986), S. 183-190 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
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    Ion beam induced atomic mixing in Fe/Al bilayered samples (1986)
    Springer
    Applied physics 41 (1986), S. 127-135 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
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    URL: http://dx.doi.org/10.1007/BF00631120
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    The effect of surface roughness on the resistivity increase of thin metal films during gas adsorption (1987)
    Springer
    Applied physics 42 (1987), S. 87-90 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity increase of very thin metal films during gas adsorption is stronger than predicted by the commond −1 law. This effect is contributed to surface roughness. A quantitative theory is presented which leads to an additionald −3 term. The theory is checked using literature data obtained for the Ag/O2 system.
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    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
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    URL: http://dx.doi.org/10.1007/BF00626412
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    Conductivity fluctuations in planar resistors (1987)
    Springer
    Applied physics 43 (1987), S. 93-95 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 41
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
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    URL: http://dx.doi.org/10.1007/BF00617959
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    EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals (1987)
    Springer
    Applied physics 43 (1987), S. 117-121 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
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    URL: http://dx.doi.org/10.1007/BF00617963
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  • 31
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    Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures (1988)
    Springer
    Applied physics 45 (1988), S. 233-244 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 73.60
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    Notes: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
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    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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    Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon? (1989)
    Springer
    Applied physics 48 (1989), S. 219-228 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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    A novel technique for measuring resistance fluctuations independently of background noise (1989)
    Springer
    Applied physics 48 (1989), S. 233-236 
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    ISSN: 1432-0630
    Keywords: 06 ; 07 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
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    Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses (1989)
    Springer
    Applied physics 48 (1989), S. 245-249 
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    ISSN: 1432-0630
    Keywords: 72.20
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    Notes: Abstract Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
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    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
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    Keywords: 72.20 ; 72.40 ; 73.60
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    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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    AC electrical behaviour of a Pb2CrO5 ceramic sample with surface electrodes (1989)
    Springer
    Applied physics 49 (1989), S. 665-670 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 72.80J ; 77.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
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    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
    Springer
    Applied physics 49 (1989), S. 659-664 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
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    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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  • 40
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    Contact versus bulk noise in resistive layers (1985)
    Springer
    Applied physics 36 (1985), S. 183-187 
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    ISSN: 1432-0630
    Keywords: 02 ; 72.20 ; 72.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract General formulae are derived to calculate the noise generated by a resistor of arbitrary shape. Contact and bulk noise have been taken into account. By calculating a particular example it will be shown that the influence of the contact and bulk noise can be changed by varying the resistor's shape.
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    Passivation of high-resistivity cadmium telluride by hydrogen implantation (1987)
    Springer
    Applied physics 43 (1987), S. 47-52 
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    Keywords: 72.20
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    Notes: Abstract Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.
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    Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells (1986)
    Springer
    Applied physics 41 (1986), S. 275-283 
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    Keywords: 85.30 ; 86.30 ; 73.60
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    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
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    Temperature dependence of AC-photoconductivity of HgI2 crystal (1987)
    Springer
    Applied physics 42 (1987), S. 129-131 
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    Keywords: 72.20 ; 72.80J ; 70.90
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    Notes: Abstract An ac impedance method has been used to study the electrical properties of an illuminated HgI2 crystal as a function of temperature [10–350 K] and frequency [1–104 Hz]. The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of [0.08±0.005 eV] and [0.25 ±0.01eV] are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity.
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    Microwave dielectric properties of Ti4+/MgO and Ni2+/MgO (1985)
    Springer
    Applied physics 36 (1985), S. 63-65 
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    Keywords: 66 ; 72.20 ; 77.20
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    Notes: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
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    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
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    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
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    Single-wafer optical processing of semiconductors thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
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    URL: http://dx.doi.org/10.1007/BF01210345
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    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
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    URL: http://dx.doi.org/10.1007/BF00615129
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    Spatial distribution of impurities in delta-doped n-type GaAs (1988)
    Springer
    Applied physics 47 (1988), S. 123-129 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 73.60 ; 75.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.
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    Ground state magnetic properties of ultrathin fcc Fe and Co films on Cu(001) surfaces (1988)
    Springer
    Applied physics 47 (1988), S. 73-76 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 75.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have grown by means of Molecular Beam Epitaxy ultrathin (1 to ∼ 10 ML) films of fcc Fe and Co on a Cu(001) surface, thus stabilizing this high temperature phase of bulk Fe and Co at room temperature. All films, including the single monolayers, are ferromagnetic. The Co films are magnetized in plane, independently on the thickness. Fe films thicker than 2 ML are magnetized along the film normal. Up to now, the statistical uncertainty is still too large to conclusively prove an enhancement of the magnetic moment for the thinnest Co films.
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    Thermoelectric power of YBa2Cu3Ox in equilibrium with gas phases (1988)
    Springer
    Applied physics 47 (1988), S. 205-208 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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    Electrical properties and thermal conductivity of AgTlTe2 in the solid and liquid phases (1989)
    Springer
    Applied physics 48 (1989), S. 251-253 
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    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe2 semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.
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    The electrical activity of stacking faults in Czochralski silicon (1989)
    Springer
    Applied physics 48 (1989), S. 431-436 
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    ISSN: 1432-0630
    Keywords: 72.20J ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
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    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 549-558 
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    ISSN: 1432-0630
    Keywords: 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
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    Correlations between clusterization and electrical properties within fluorite-type anions excess solid solutions: Setting of a model (1989)
    Springer
    Applied physics 49 (1989), S. 3-12 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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    Structural, electrical and catalytic properties of ion-implanted oxides (1989)
    Springer
    Applied physics 49 (1989), S. 33-40 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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    Transition metal impurities in silicon: New defect reactions (1989)
    Springer
    Applied physics 49 (1989), S. 431-436 
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    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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    Evidence for two energy levels associated with EL2 trap in GaAs (1985)
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    Applied physics 36 (1985), S. 213-216 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
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    Notes: Abstract By photocapacitance technique, applied to n-type LEC-grown GaAs, two energy levels:E v +0.45 eV andE c −0.75 eV are identified, for the first time, as being associated with the EL2 trap. As follows from the analysis of photo-EPR results on highly resistive GaAs crystals, the same energy levels can be attributed to the arsenic antisite defect, AsGA. In view of these findings, it is argued that the occupied EL2 level corresponds to the neutral charge state of AsGa defect.
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    One-dimensional regular arrays of antiphase domain boundaries in anti-ferroelectric tin-substituted lead zirconate titanate (PZT) Ceramics (1985)
    Springer
    Applied physics 36 (1985), S. 221-227 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 64 ; 77 ; 81.30
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    Notes: Abstract The existence of one-dimensional regular arrays of antiphase domain boundaries has been confirmed in tin-substituted PZT ferroelectrics of ABO3 perovskite structure (Pb0.99{[(Zr1−y Sn y )1−x Ti x ]0.98Nb0.02}O3,x=0.03 and 0.04,y=0.20) by means of electron diffraction and lattice imaging. Calculation has been made of the number of satellite spots in the diffraction patterns and their positions determined. They coincide well with the electron diffraction patterns experimentally obtained. The finding proves the relative elongation in one dimension of the ferroelectric unit cell caused by a parallel array of electrical dipoles, as compared to the cell of an anti-parallel array of dipoles.
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    Nucleation process of stacking fault tetrahedra in gold studied by positron lifetime spectroscopy (1985)
    Springer
    Applied physics 37 (1985), S. 65-72 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
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    Notes: Abstract By component analyses of positron lifetime spectra in quenched gold, it was found that positrons are strongly trapped by stacking fault tetrahedra (SFT) at which the lifetime is about 160 ps remarkably smaller than that for monovacancies (∼200 ps) or divacancies (∼220 ps). Positron lifetimes at small vacancy clusters were also estimated in relation to the nucleation process of SFT, with the aid of computer simulation of kinetics of vacancy clustering during quenching and on subsequent isochronal annealing. The results show that large atomic relaxation occurs in small vacancy clusters among which pentavacancies have the largest open-space, thereby having the lifetime of about 230 ps larger than that of trior tetra-vacancies (∼160ps). It is also suggested that tetra- and penta-vacancies act as prenuclei for stable nuclei of SFT consisting of six or more vacancies.
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    Optical, structural, electrical and optoelectronic properties of hydrogenated amorphous Si1−x C x alloy thin films prepared by planar magnetron sputtering method (1985)
    Springer
    Applied physics 38 (1985), S. 37-43 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 72.40 ; 78.20
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    Notes: Abstract Amorphous Si1−xCx: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.
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    Hole initiated impact ionization in indium antimonide (1985)
    Springer
    Applied physics 38 (1985), S. 145-149 
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    Keywords: 72.20
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    Notes: Abstract The impact ionization in p-type indium antimonide at 77 K was investigated both experimentally and theoretically. The dc pulse measurements with the time resolution of 50 ps and the high-field Hall measurements produced clear evidence that the impact ionization inp-InSb is initiated by equilibrium holes. The calculated hole generation rate gives good agreement with the experimental results.
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    X-ray studies of dislocations in multi-layer Cu films (1986)
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    Applied physics 39 (1986), S. 65-66 
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    Keywords: 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Vacuum-prepared multi-layer Cu films have been studied by x-ray diffraction to detect the averaged dislocation density and distribution. There are very few stacking faults and a very small degree of texture in the films.
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    HREM investigation of twinning in very high dose phosphorus ion-implanted silicon (1986)
    Springer
    Applied physics 39 (1986), S. 83-90 
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    ISSN: 1432-0630
    Keywords: 61.50 ; 61.70 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e.,Σ3 boundaries) andΣ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.
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    On the origin of the hot-electron instabilities inn-InSb at crossed electric and magnetic fields (1986)
    Springer
    Applied physics 39 (1986), S. 135-139 
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    Keywords: 72.20
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    Notes: Abstract Coherent current oscillations with frequencies of several hundreds of megahertz and microwave generation at frequencies up to 40 GHz were investigated in then-InSb samples subjected to crossed electric and magnetic fields. They are shown as being caused by electric field redistribution and negative differential mobility in high-field regions.
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    Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors (1986)
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    Applied physics 40 (1986), S. 101-107 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 8
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    Notes: Abstract Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphorus starting from a high surface concentration generatesexcess point defects which diffuse into the depth of the crystal and lead to a tail in the phosphorus concentration profile by considerably enhancing the phosphorus diffusion in this region. It is also well known that the interface between silicon and a non growing oxide acts as a sink for excess point defects. Since source/drain areas of MOS transistors are surrounded by gate and isolation oxides, the question arises how the resulting excess point defect distribution may influence the lateral and vertical diffusion profile of phosphorus and hence the channel length and the junction depth of the source/drain region in a MOS device. We extended the one-dimensional Fair-Tsai model of phosphorus diffusion into two dimensions and incorporated that the interface between silicon and a gate oxide acts as a sink for excess point defects and modifies their distribution. The appropriate code was implemented in the two-dimensional process simulation program LADIS. Based on this extended model two-dimensional simulations of phosphorus drains have been performed and compared to experimental results and to results from other numerical models. It turns out that the presence of the gate oxide reduces the tail in the phosphorus concentration profile, considerably in lateral direction and less pronounced in vertical direction. Limitations of the model will be discussed in detail.
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    Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes (1986)
    Springer
    Applied physics 40 (1986), S. 171-176 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 71.20 ; 86.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
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    MITATT mode in DDR heterostructure Impatt (1987)
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    Applied physics 42 (1987), S. 303-309 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
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    The pre-exponential factor of the escape probability in thermally stimulated processes (1987)
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    Applied physics 43 (1987), S. 29-35 
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    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
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    Notes: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
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    Temperature dependence of dielectric behaviour of illuminated HgI2 (1987)
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    Applied physics 43 (1987), S. 61-63 
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    Keywords: 72.20 ; 72.80J ; 70.90
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    Notes: Abstract The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 104 Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.
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    Toward molecular electronics (1987)
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    Applied physics 43 (1987), S. 139-141 
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    Keywords: 85.40 ; 72.20 ; 76
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    Notes: Abstract A polarized N-O bond behaves as an intramolecular p-n junction. Their rectifying properties have been found in 1,3-dimethylisoxasole, 1-phenylsydnone, and 1-(4-methylphenyl)sydnone molecules based on H1-NMR data.
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    The positron beam at the stuttgart pelletron accelerator and its applications toβ +γ positron lifetime measurements (1987)
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    Applied physics 43 (1987), S. 261-267 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A slow-positron source has been installed in the therminal of an electrostatic 6.5 MeV accelerator and provides a monoenergetic positron beam in the few-MeV range. It will be used to operate a “fast” positron lifetime spectrometer based onβ + γ coincidences. The properties of the beam, the expected performance of the spectrometer, its advantages over conventionalγγ lifetime measurements, a number of intended applications, as well as recent positron-electron scattering experiments and plans for positron channelling and channelling-radiation studies are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635181
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    Phase formation and redistribution of Xe implanted in the Ni-Si system after fast melting and solidification (1987)
    Springer
    Applied physics 44 (1987), S. 279-284 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi2 and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi2 layer on Si. An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi2 or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi2 interface must thus be ascribed to peculiar characteristics of the interface itself.
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    URL: http://dx.doi.org/10.1007/BF00616703
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  • 73
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    Threshold switching effects in AgTlSe2 and CuTlSe2 films (1988)
    Springer
    Applied physics 46 (1988), S. 113-117 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Switching effects in AgTlSe2 and CuTlSe2 chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615918
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  • 74
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    Hydrogenated amorphous silicon films obtained by a low pressure dc glow discharge (1988)
    Springer
    Applied physics 46 (1988), S. 207-213 
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    ISSN: 1432-0630
    Keywords: 61.40 ; 72.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
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    The structure and defect structure of high-T c superconducting materials in the system Tl-Ba-Ca-Cu-O (1988)
    Springer
    Applied physics 46 (1988), S. 233-239 
    Details
    ISSN: 1432-0630
    Keywords: 74 ; 61.14 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron diffraction and high resolution electron microscopy have been applied to study Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10. The structures only differ in the thickness of the perovskite lamellae and have tetragonal basic unit cells witha=0.385,c=2.93 nm anda=0.385,c=3.58 nm, respectively. A modulation with wave vectors in (100)* and (010)* planes occurs in both compounds. This modulation of which the intensity is somewhat sample dependent is much weaker than in the Bi compounds and disappears irreversibly upon heating of the specimen. Intergrowth of lamellae of different phases does occur, although not as frequently as in the Bi compounds.
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    URL: http://dx.doi.org/10.1007/BF00939269
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    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210344
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    Single-wafer optical processing of semiconductors: Thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141591
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  • 78
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    Mechanism for nonlinearI-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system (1988)
    Springer
    Applied physics 46 (1988), S. 299-303 
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    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The nonlinearI–V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease inV th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI–V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141596
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  • 79
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    Quantitative characterization of chaotic instabilities in semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 181-188 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.70 ; 06
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk *, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAs∶Cr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk * range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.
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    URL: http://dx.doi.org/10.1007/BF01141282
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    Physical properties and applications of Cd1−xPbxF2 superionic crystals (1989)
    Springer
    Applied physics 49 (1989), S. 413-424 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 85.80 ; 65.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
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    URL: http://dx.doi.org/10.1007/BF00615026
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    Electrochemical and structural characteristics of tungstic acids as cathode materials for lithium batteries (1989)
    Springer
    Applied physics 49 (1989), S. 83-89 
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    ISSN: 1432-0630
    Keywords: 72.60 ; 85.80 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrochemical characteristics and structural changes associated with discharge and charge of several tungstic acids such as H2WO4 and H2WO4 · H2O have been investigated. The suitability of these substances as new cathode materials for nonaqueous lithium batteries has been assessed. H2WO4, having only coordinated water molecules, showed a discharge capacity of about 410 Ah kg−1 of acid weight and a discharge potential around 2 V vs. Li/Li+. This capacity was much higher than the 40 ∼ 180 Ah kg−1 of anhydrous WO3. H2WO4 showed a good charge-discharge cycling behavior at a capacity below 1e −/W. However, the formation of a stable phase such as Li2WO4 during the cyclings limited the cycling number. In addition, the crystal structure of H2WO4 changed from orthorhombic to tetragonal during discharge, but the original layered lattice was kept on discharge to 1.5e −/W. On the other hand, a significant decrease in the layer spacing of H2WO4 · H2O took place with discharge, due to the direct interaction between the interlayer water molecule and the lithium inserted between the layers. In this paper, in particular, the effect of the coordinated and hydrated water molecules in the acid structure on the electrochemical behavior is discussed.
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    URL: http://dx.doi.org/10.1007/BF00615469
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    Electrical properties of novel mixed-conducting oxides (1989)
    Springer
    Applied physics 49 (1989), S. 25-31 
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    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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    URL: http://dx.doi.org/10.1007/BF00615461
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    Dielectric relaxation and computer simulation studies of rutile-structured MnF2 crystals (1989)
    Springer
    Applied physics 49 (1989), S. 69-73 
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    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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    Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing (1989)
    Springer
    Applied physics 49 (1989), S. 149-155 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
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    URL: http://dx.doi.org/10.1007/BF00616293
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    A macro-resonance-cell description for high-T c oxide superconductors (1989)
    Springer
    Applied physics 49 (1989), S. 171-179 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 61.70 ; 63
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A phenomenological macro-resonance-cell description of bonding in high-T c oxide superconductors based on some common structural features is proposed. In this description, the oxidation states of the cations on the lattice frame are assumed to be oscillating. The oxygen atoms are described as being in a “breathing mode” and coupling is assumed to exist between the CuO2 layers and the boundary (capping) layers in these quasi two-dimensional systems. The variation ofT c for different materials is attributed in part to the relative effectiveness of the coupling between different kinds of boundary layer(s). Peierl's deformation or Jahn-Teller effect assisted by lattice softening and possibly magnetic ordering is discussed in relation to high-T c superconductivity in these oxides.
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    A Systematic investigation of the dc electrical conductivity of rare-earth doped ceria (1989)
    Springer
    Applied physics 49 (1989), S. 225-232 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
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    Electrical conduction in Cu/Mn multilayer films (1989)
    Springer
    Applied physics 49 (1989), S. 273-277 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.
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    Masthead (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988) 
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    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760280701
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    A boundary element simulation of compression mold filling (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 413-420 
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    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This paper presents the development of the boundary element equations for the compression molding process of isothermal Newtonian fluids. It shows the numerical implementation of the boundary element equations and presents a simple method of carrying out the domain integral present in the governing equations. The results and accuracy of a boundary element simulation are discussed, and the numerical results compared to experimental values.
    Additional Material: 14 Ill.
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    Fracture behavior of coated/uncoated graphite-epoxy composites (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 605-609 
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    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The static delamination behavior of graphite/epoxy composite specimens subjected to mode I tensile opening (using UDCBUniform double cantilever beam. specimens), and pure mode II shear loading (using ENFEnd-notched flexural. specimens) were studied. The graphite epoxy composites for the study were made from commercially treated fibers, with and without an electropolymerized interlayer. The mode I fracture energy (GIC) was found to be significantly higher (more than 50 percent) for the coated fibers. However, this improvement was accompanied by a high reduction (more than 3 times) in the mode II fracture energy (GIIC). This effect is apparently related to poor adhesion between the interlayer and the epoxy resin, which may be corrected by use of a “top layer” of appropriate composition to form chemical bonds between the phases. The fracture toughness (KIC) of composites made with commercially treated fibers was also evaluated, using double side-notched specimens.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/pen.760280909
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    Heat transfer effects on the processing-structure relationships of polyetheretherketone (PEEK) based composites (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 583-591 
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    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An analytical methodology was developed capable of describing interrelations between thermal processing and polymer structure for thermoplastic based composite laminates. Specifically, this modeling methodology was used to describe experimental results generated with a specially designed match die quench mold by processing both neat PEEK polymer and carbon fiber reinforced laminate samples at different cooling rates. The developed model accurately predicted temperature profiles for PEEK laminates of different thicknesses, under normal as well as extreme quenching conditions of 114°C/s. surface cooling rates that are possible to generate with the quench mold. In general, the modeling methodology is capable of predicting a part's thermal profile during processing in terms of the composite's microscopic intrinsic properties (fiber and matrix), composition, and lamina orientation. Furthermore, by coupling to the thermal profile description, a previously developed crystallization kinetics model for PEEK polymer and its carbon reinforced composite, a quantitative description of structural development during processing was obtained. Thus, with this analytical methodology, a skin-core crystallinity profile, where the crystallinity varies with part-thickness as a result of uneven cooling experienced during processing, was predicted both for the neat PEEK polymer and its carbon reinforced laminate forms. Finally, the developed methodology clearly established the interplay of both microscopic heat transfer and kinetics of crystallization/solidification of the matrix that must be accounted for in predicting the final structure of a carbon fiber reinforced laminate that will, in turn, govern microscopic and macroscopic performance.
    Additional Material: 7 Ill.
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    URL: http://dx.doi.org/10.1002/pen.760280907
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    Fluid sorption characterization of PEEK matrices and composites (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 634-639 
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    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Neat poly(ether-ether-ketone) (PEEK) and carbon fiber reinforced PEEK (APC-2) specimens were prepared using a variety of cooling rates to achieve a range of crystallinities. Amorphous specimens were exposed to a variety of fluids to determine the penetrant types which are able to strongly influence the material. This allowed the estimation of the solubility parameter and hydrogen bonding index for PEEK to be 9.5 and 3.1, respectively. Methylene chloride was used to investigate the kinetics of penetrant sorption. The data demonstrated Case II behavior, with the initial crystallinity having a pronounced effect on both the kinetic and equilibrium data. Accordingly, a model was proposed capable of describing the sorption level and penetration depth as a function of time given the sample crystallinity and sorption temperature. With Case II behavior there was no difference in the sorption kinetics of neat and fiber reinforced PEEK. Finally, the dynamic mechanical properties measured during sorption were found to be dependent on the sorption process.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/pen.760280912
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    Morphology and rheological properties of polypropylene-linear low density polyethylene blends (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 670-678 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The dynamic shear viscosity and the morphology of polypropylene homopolymer and copolymer blended with linear low density polyethylene are studied. A maximum in the dynamic shear viscosity vs. blend composition is reported for the polypropylene copolymer, linear low density polyethylene system. The increasing dynamic shear viscosity is in accordance with the occurrence of a morphology of polyethylene inclusions in rubber surrounded by a polypropylene matrix. Comparing calculations of the dynamic shear viscosities - based on a shell model with interlayer - and experimental results supports this view.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281006
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    Properties of segmented block copolyurethane II. Adhesion between PET cord and rubber by poly(styrene-b-butadiene) polyethylene terephthalate block copolyurethane (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 684-687 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Hydroxy-terminated copoly(fstyrene-b-1,2-butadiene) (HPSB) containing rubber-affinitive vinyl side chains and having a molecular weight of 2000 to 4000 were prepared, and block copolyurethanes were synthesized by using a low molecular weight hydroxy-terminated poly (ethyl en e terephthalate) as a PET-affinitive component and 4,4′-diphenylmethane diisocyanate as a chain extender. The relationships between the molecular weight of HPSB, copolymerization ratio of styrene to butadiene and the adhesive strength of PKT/rubber in high temperature atmospheres were examined. A peak of adhesive strength was observed at styrene copolymerization ratio of 20 wt percent and a HPSB molecular weight of 3000. The adhesion mechanism was estimated from the behavior of the characteristic infrared absorption of block Copolyurethane in heating.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281008
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    Vibration welding of thermoplastics. Part I: Phenomenology of the welding process (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 718-727 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: In vibration welding of thermoplastics, frictional work done by vibrating two parts under pressure, along their common interface, is used to generate heat to effect a weld. The main process parameters in vibration welding are the weld frequency, the amplitude of the vibratory motion, the weld pressure, and the weld time. How these parameters affect weld quality, the conditions that result in the best welds, the weldability of dissimilar plastics, and the effect of fillers such as glass are of interest. To address these issues, a research vibration welding machine in which all the parameters can be independently and accurately controlled and monitored was designed and fabricated. The phenomenology of welding, as determined by experiments on the four thermoplastics polycarbonate, poly (butylene terephthalate), polyetherimide, and modified poly (phenylene oxide), is described.
    Additional Material: 19 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281104
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    A study on the reactive extrusion process of polyurethane (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 743-757 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An engineering analysis of the reactive extrusion process of a thermoplastic polyurethane was made through numerical simulation and actual experiment. The reactants used in this system were 4,4′diphenylmethane diisocyanate, polycaprolactone diol (M.W., 824), and 1,4-bu-tanediol with equivalent weight ratio of 2:1:1. As a catalyst, dibutyltin dilaurate was used. The reaction kinetics and the viscosity function were obtained through experiments, and the mathematical model which includes the conservation equations of mass, momentum, energy, and chemical species was solved numerically to obtain the velocity, concentration, temperature, viscosity, and pressure profiles. The actual experiments were performed in the laboratory scale extruder to compare the experimental results with those of the numerical simulation.
    Additional Material: 30 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281107
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    Interpenetrating polymer network from blocked isocyanates. I. Structure and properties of polyurethane-urea polyvinyl simultaneous interpenetrating networks (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988), S. 775-784 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A series of polyurethane-urea/polyvinyl simultaneous interpenetrating polymer networks (SINs) were prepared starting from a mixture of isocyanate prepolymer blocked with N-(1-1′-dimethyl-3-cxobutyl) acrylamide oxime, chain extender, vinyl monomers, and catalysts. Their physical properties and morphology were investigated using differential scanning calorimetry, dynamic mechanical measurements, and small-angle X-ray scattering. The polyurethane-urea networks examined were two-phase in nature. The vinyl network was formed with diacetone acrylamide oxime, trimethylolpropane trimethacrylate, and N-vinyl-pyrrolidone. Calorimetric analyses revealed that the polyether soft segment phase separated within the SINs. At higher temperature, dynamic mechanical measurements demonstrated the presence of only one glass transition temperature (Tg) intermediate in temperature to the Tg of the vinyl network and the Tg of the urethane hard phase. This is indicative of chain entanglement (interpenetration) between the vinyl network and the polyurethane hard segments resulting in a two-phase morphology. Small-angle X-ray scattering analyses provided measurements of diffuse phase boundary thickness, phase mixing, and domain size distribution. Appreciable interfacial thickness was not observed and thus phase mixing occurred within the phases. Domain size distribution indicated that high network constraints hindered the development of domains and limited the phase segregation.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281203
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    Masthead (1988)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 28 (1988) 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760281301
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    Phenomenological and mathematical analysis of the orientation in biaxially drawn polymeric films (1987)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1021-1034 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Equations are derived that relate the orientation of “pseudo-affine” reoriented structural units after a biaxial deformation to the degrees and the directions of the effective drawings. The connection between these drawing parameters and those externally applied is analyzed in detail. It is shown how a comparison of these two sets of drawing parameters allows conclusions regarding the distribution throughout the material of the stresses that cause the deformation, the inhomogeneity of the deformation, and the role of non-orienting flow during deformation. In particular, the orientation of biaxially drawn poly(ethylene terephthalate) films is investigated, and it is shown what general information can be obtained on the deformation behavior of this material on the basis of these considerations.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760271402
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  • 100
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    Scale-up of single screw extruders (1987)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 27 (1987), S. 1059-1068 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Scale-up from small laboratory size extruders to large production size extruders is a procedure of great practical importance. Many scale-up rules and theories have been proposed in the past, however it is not always clear how the different scale-up methods will affect extruder performance. A basic analysis of scale-up in plasticating single screw extruders is developed from which the effect of a certain scale-up strategy on extrusion performance can be evaluated in terms of solids conveying, melting, melt conveying, mixing, residence time, heat transfer, power consumption, and specific energy consumption. Various existing scale-up theories are evaluated and compared using the basic analysis. A number of existing scale-up theories have some significant drawbacks, in particular with non-constant specific energy consumption and imbalance between melting rate and pumping rate. Conditions that are desirable to achieve in scale-up are enumerated and ranked in terms of importance. This leads to two new scale-up methods that result in constant mechanical specific energy consumption and high throughput rates. The first scale-up method keeps the specific surface area constant. This scale-up should work well for high values of the Brinkman number. However, at low values of the Brinkman number, the melting rate may be insufficient. The second scale-up method keeps the melting rate at low Brinkman number equal to the pumping rate and, thus, should be useful in cases where the first scale-up method cannot be used.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760271406
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