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  • Articles  (41)
  • 66.30  (41)
  • 1985-1989  (41)
  • 1950-1954
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
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  • Articles  (41)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
  • Physics  (41)
  • 1
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
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  • 2
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    Applied physics 41 (1986), S. 137-143 
    ISSN: 1432-0630
    Keywords: 68.20 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The decay of periodic surface profiles by surface self-diffusion is simulated by numerically solving the phenomenological equations for this process. The crystalline nature of the surface is taken into account by introducing an anisotropic surface free energy,γ(θ). Depending on the degree of anisotropy ofγ(θ), the decay kinetics and the shapes of the profiles are largely different. A comparison with measurements of profile decay on Pt(l10) single crystal surfaces shows that the anisotropy inγ(θ) along the [1¯10] azimuth should be about 2–3%, while that along the [001] azimuth is expected near 8%. In the latter case large amplitude profiles exhibit (111) faceting and slow decay kinetics which are non-exponential. The rate of surface self-diffusion on Pt(110) is anisotropic with the [1¯10] direction being faster than the [001] direction.
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  • 3
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    Applied physics 41 (1986), S. 171-174 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
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  • 4
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    Applied physics 42 (1987), S. 193-196 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
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  • 5
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    Applied physics 38 (1985), S. 49-56 
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
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  • 6
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    Applied physics 39 (1986), S. 59-64 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295 K. It was observed that for the systems which form miscible liquids but which have limited solid solubility, Cu-Nb and Cu-Bi, mixing occurs at 6 but not at 295 K. For a system which is not miscible in either the solid or liquid state, mixing does not occur at either 6 or 295 K. Mixing was also measured in pure Cu isotope bilayer specimens,63Cu–65Cu, to provide a standard for the other measurements. The results are interpreted on the basis of an atomistic model of ion beam mixing. The model assumes that point defects are created in the initial phases of the cascade evolution, and that these defects migrate during the later ‘thermal spike’ phase.
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  • 7
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH4). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.
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  • 8
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    Applied physics 46 (1988), S. 35-38 
    ISSN: 1432-0630
    Keywords: 73.40 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.
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  • 9
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    Applied physics 47 (1988), S. 309-311 
    ISSN: 1432-0630
    Keywords: 72.80 E ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10−15−4×10-1cm2s−1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.
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  • 10
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    Applied physics 49 (1989), S. 65-68 
    ISSN: 1432-0630
    Keywords: 66.30 ; 76.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The relaxation timesT 1,T 1q,T 1D, andT 2 for1H in the tetragonal-A phase of HxWO3 have been measured over the temperature range 190 to 490 K. The1H relaxation behaviour appears to be governed by diffusion over inequivalent jump distances, approximating to a short range planar diffusion and a long range isotropic diffusion. Parameters for the latter motion are estimated asE a = 68 kJ/mol andτ 0=2.5×10−13 s. The powder X-ray diffraction pattern for this phase of HxWO3 has been studied over the temperature range 300–470 K. The tetragonal distortion diminishes with temperature and H0.43 WO3 becomes cubic at about 435 K. Volumetric studies of hydrogen evolution show that decomposition accelerates at approximately this temperature.
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  • 11
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    Applied physics 49 (1989), S. 425-429 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 72.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The physico-chemical and electrochemical properties of a new class of polymer electrolytes formed by complexes of poly(ethylene oxide) and copper trifluorosulphonate salts have been investigated. The results suggest that these electrolytes are good copper ion conductors. Under particular conditions of concentration and temperature, and apparent electronic transport has also been evidenced.
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  • 12
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    Applied physics 37 (1985), S. 1-17 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
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  • 13
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    Applied physics 38 (1985), S. 139-143 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and 295 K. Additional measurements were performed on samples irradiated at 80 K with 1.8-MeV Kr and 295 K with 1.7-MeV Kr. It was observed that the mixing is the same at 6 K as at 80 K but that it is somewhat greater at 295 K. It was also found that at both 80 and 295 K the mixing is the same for 500-keV as for 1.7 MeV projectile energies if the irradiations are compared on the basis of deposited damage energy. Another set of mixing measurements were performed on Ni and Ti markers in Hf and Hf markers in Ni at 6, 80, and 295 K. Although Ni is known to be a fast thermal diffusing atom in Hf, only a 50% difference in ion beam mixing was observed for the Ni and Ti markers at 6 or 80 K. For these marker systems, the mixing was also approximately the same at 6 and 80 K. At 295 K, the mixing remained constant for the Ti marker, increased slightly for the Hf marker in Ni, but decreased strongly for the Ni marker in Hf. The results for both sets of measurements are interpreted according to a qualitative picture of the development of displacement cascades obtained from molecular dynamics computer simulations.
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  • 14
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    Applied physics 41 (1986), S. 107-114 
    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trap centers in the Si-SiO2 interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 1012−3 × 1013 cm−2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E v +0.35 eV), the Au-acceptor (E v +0.53 eV), and the Au-Fe complex (E v +0.45 eV). The trap concentration profiles show that the Si-SiO2 interface affects the Au concentration in a depth range of 1 μm from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 1015 cm−3.
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  • 15
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    Applied physics 47 (1988), S. 399-407 
    ISSN: 1432-0630
    Keywords: 82.65J ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recombination reactions of adsorbed particles on fractal and multifractal media are discussed within the framework of the random walk arguments. Theoretical results, which predict anomalous reaction orderX〉2 in the low coverage regime, are checked by means of Monte Carlo simulations on two-dimensional structures and good agreement is found. Thermal desorption experiments on rough surfaces are simulated by studying temperature programmed reactions on fractal percolating clusters. For this case the simulations giveX≅2.5, i. e. the fractal reaction order is greater than the classical one (X=2). The influence of chemisorbed impurities (poison) on the recombination reaction is also studied and the reaction order is found to increase beyondX=2.5 when increasing the concentration of poison. Isothermal (recombination) desorption from energetically heterogeneous surfaces is simulated on two-dimensional substrata with multifractal distributions of activation energy of diffusion. For this caseX (withX〉2) depends on the energetic heterogeneity of the substrata (X=2 for an homogeneous substratum). The obtained results point out that the fractal chemical kinetic behaviour is not only restricted to the low concentration regime, but it also covers the medium coverage regime, i.e. it holds for a monolayer surface coverageθ≦0.4 in fractal percolating clusters.
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  • 16
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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  • 17
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    Applied physics 49 (1989), S. 75-82 
    ISSN: 1432-0630
    Keywords: 66.30 ; 72.60 ; 85.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity of resistive oxygen sensors based on semiconducting titanates (BaTiO3, SrTiO3) is determined by the amount and the ratio of the different concentrations of atomic defects in the sensor material. At sufficiently high temperatures the sensor exchanges oxygen with the surrounding gas atmosphere resulting in variations of the concentration of defects. The kinetics of these oxygen exchange processes are determined by the diffusion of the defects in the solid. In this paper the diffusion coefficients of the defects, which are decisive for the electrical conductivity, are determined by measurement of the conductivity during the diffusion processes. The evaluation of these results by an analytical model which considers the interaction between all simultaneously diffusing types of defects, allows a survey of the effects influencing the diffusion rate. With this knowledge, it is possible to estimate the influence of grain boundaries, acceptors, temperature and oxygen pressure on the response time of the sensor.
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  • 18
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    Applied physics 42 (1987), S. 19-33 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A titanium-layer of approximately 90 nm thickness has been homogeneously loaded with deuterium by implantation and diffusion. Desorption was studied by use of28Si ions of up to 20 MeV energy (and other ions). The spectrum of the elastic-recoil-detection method serves as indication of the released and retained amount of deuterium. The retained deuterium is recorded as a function of the employed ion dose and is converted into a desorption rate as a function of the retained deuterium concentration. — A one-dimensional theory considering transitions from vacuum to surface and surface to Ti volume (and back) leads to a system of equations, the solutions of which allow adaptation to the experiment and therefore an evaluation with respect to certain characteristic parameters. — Some of the results might be influenced by the high concentration of C and O impurities.
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  • 19
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    Applied physics 42 (1987), S. 219-226 
    ISSN: 1432-0630
    Keywords: 66.30 ; 68.60 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Because of its good depth resolution, the Auger electron depth profile analysis allows to investigate diffusion phenomena in thin films directly. Complicated calibration procedures, however, are needed to correct for the matrix effects inherent in the Auger method, particularly artefacts due to the sputtering process. In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures. Compared to the double-layer films, the multi-layer structure has the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects. Finally, it is shown how grain boundary and bulk diffusion data can be extracted separately from the composition profiles.
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  • 20
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    Applied physics 42 (1987), S. 179-192 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The model used in the first part of this investigation is enlarged to take account of the experimentally found inhibition of desorption by gases from the rest-gas atmosphere of the target chamber. The main parameters that can be found by adaptation of a model set of equations are the rate ratios for transfer of chemisorbed atoms in the surface and back, and of the maximal desorption current densities from the surface into the vacuum for deuterium and foreign gases. The desorption cross sections are discussed in relation to the electronic stopping power of the fast ions.
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  • 21
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    Applied physics 46 (1988), S. 13-16 
    ISSN: 1432-0630
    Keywords: 61.80 ; 64 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam induced atomic mixing of Cu/Au bilayer thin film is studied using combined electrical resistivity measurements and Rutherford Backscattering Spectrometry (RBS). 400 keV Kr+ ion irradiation with fluences ranging from 3.3×1015 to 7.6×1016 ions/cm2 at room temperature have been used. Ion beam mixing lead to a uniformly mixed metal alloy. The formation of Cu/Au solid solutions depends on the initial composition and on the fluence of irradiating ions. For an initial composition of Cu42Au58, a Cu-rich solid solution of composition Cu72Au28 is formed after irradiation with 7.6×1016 ions/cm2. The kinematics of the intermixing process is also studied by in situ electrical resistivity measurements which confirmed the formation of the Cu/Au solid solutions.
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  • 22
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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  • 23
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    Applied physics 49 (1989), S. 33-40 
    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
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    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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  • 24
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    Applied physics 49 (1989), S. 239-247 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract That ionic conductivity in glass is a non-exponential process and has been known for many years. The amorphous structure of glass and hence a distribution of cation sites has often been thought to be the cause for the non-exponentiality. Almost completely unresearched, however, has been the effect of glass composition on the nature of the relaxation process. In this paper, we review the observations that have been made of the relationships between glass composition and the non-exponential character of the conductivity relaxation as well combine our recent wide composition range studies of sodium aluminoborate and lithium phosphate glasses to delineate the major features of the correlation. By examining glass compositions ranging from 0.02 to 60 mole% alkalioxide, it is observed that the rapid development of non-exponentiality within 1% Na2O is accompanied by a similar rapid decrease in the average cation-cation separation distance, this being calculated using the composition and density. Other quantities such as the dc conductivity or activation energy are observed to vary too slowly with composition to produce a linear correlation with the extent of non-exponentiality as monitored in theβ parameter of the stretched exponentialkww function.
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  • 25
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    Applied physics 49 (1989), S. 249-257 
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.10 ; 66.30 ; 64.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract (PEO) n :ZnX 2 (X = I, Br) complexes were formed at room temperature with values ofn ranging from 8 to 30. Differential scanning calorimetry (DSC) results indicate that none of them contained any crystalline phases that can be associated with the formation of a complex (i.e. it can be assumed that all the salt is in the amorphous phase). EXAFS studies carried out on these samples suggest that the zinc cation is co-ordinated to two of the halide ions and, in addition, to 4 oxygen atoms whereX = I and 6 oxygen atoms whereX = Br. The DSC results confirm that the zinc cation is in an environment independent of overall stoichiometry, as the glass transition temperatures of the samples were found to be similar throughout. By comparing these with those of annealed samples (made by heating the above samples to 150°C and cooling to −80°C at 320°C min−1) it was found that the stoichiometry of the amorphous phase was roughly 6∶1 forX=I and 8∶1 forX = Br.
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  • 26
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    Applied physics 49 (1989), S. 431-436 
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    Keywords: 71.55 ; 66.30 ; 73.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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  • 27
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    Applied physics 40 (1986), S. 101-107 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 8
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphorus starting from a high surface concentration generatesexcess point defects which diffuse into the depth of the crystal and lead to a tail in the phosphorus concentration profile by considerably enhancing the phosphorus diffusion in this region. It is also well known that the interface between silicon and a non growing oxide acts as a sink for excess point defects. Since source/drain areas of MOS transistors are surrounded by gate and isolation oxides, the question arises how the resulting excess point defect distribution may influence the lateral and vertical diffusion profile of phosphorus and hence the channel length and the junction depth of the source/drain region in a MOS device. We extended the one-dimensional Fair-Tsai model of phosphorus diffusion into two dimensions and incorporated that the interface between silicon and a gate oxide acts as a sink for excess point defects and modifies their distribution. The appropriate code was implemented in the two-dimensional process simulation program LADIS. Based on this extended model two-dimensional simulations of phosphorus drains have been performed and compared to experimental results and to results from other numerical models. It turns out that the presence of the gate oxide reduces the tail in the phosphorus concentration profile, considerably in lateral direction and less pronounced in vertical direction. Limitations of the model will be discussed in detail.
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  • 28
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    Applied physics 45 (1988), S. 185-187 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of thermal treatment on a (Li2O∶Al2O3∶ SiO2) glass ceramic is studied by laser spectroscopy. At temperatures above 800 °C a fluorescence of Cr3+ ions around 693 nm appears which indicates the growth of crystallites where the Cr3+ ions occupy sites similar to those in Al2O3.
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  • 29
    ISSN: 1432-0630
    Keywords: 74 ; 66.30 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The change in electrical resistance with time for bulk, thick-film, and thin-film Ba2YCu3Ox at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants τ to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1μm film at 600° C,τ 〈1 s for the range of PO2 (O2 being a shorthand for O2) from 100% to 0.001%. The rate increases markedly with increasing PO2. The actual resistance decreases with PO2 at a rate of logρ/log PO2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10−11−1·10−12 cm2/s in the 435°–320° C range, with an activation energy of ≅27 kcal/mole.
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  • 30
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    Applied physics 44 (1987), S. 347-352 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The stable defects created in most dielectrica by fast heavy ions, called “latent nuclear tracks”, are zones of reduced density. Using the small-angle neutron-scattering technique it is shown that water molecules which permeate a polymer foil are preferentially embedded in these zones. In the track region the diffusion- and the sorption coefficients for various atoms and molecules are larger than in unirradiated material. In the damaged region of tracks produced by uranium ions in Polyethyleneterephtalate (PETP) the permeability for neon, oxygen, argon, carbondioxide, and water is enhanced by factors between 60 and 290. A method for the preferential etching of latent nuclear tracks in PETP using methanol as a solvent is suggested.
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  • 31
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    Applied physics 46 (1988), S. 159-163 
    ISSN: 1432-0630
    Keywords: 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Diffusion of selenium and tellurium in silicon has been investigated in the temperature range 1000°C to 1310°C by sheet conductivity. For Si∶SeD 0= 0.3±0.1 cm2/s andh=2.6±0.1 eV, and for Si∶TeD 0=0.9±0.3 cm2/s and h=3.3±0.1eV have been obtained. The surface concentrations for both dopants were of the order of 5 × 1013 to 6×1016cm−3. The Hall coefficient leads to an energy level of 300±15meV for selenium and 200±20meV for tellurium.
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  • 32
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    Applied physics 47 (1988), S. 399-407 
    ISSN: 1432-0630
    Keywords: 82.65J ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recombination reactions of adsorbed particles on fractal and multifractal media are discussed within the framework of the random walk arguments. Theoretical results, which predict anomalous reaction orderX〉2 in the low coverage regime, are checked by means of Monte Carlo simulations on two-dimensional structures and good agreement is found. Thermal desorption experiments on rough surfaces are simulated by studying temperature programmed reactions on fractal percolating clusters. For this case the simulations giveX≅2.5, i. e. the fractal reaction order is greater than the classical one (X=2). The influence of chemisorbed impurities (poison) on the recombination reaction is also studied and the reaction order is found to increase beyondX=2.5 when increasing the concentration of poison. Isothermal (recombination) desorption from energetically heterogeneous surfaces is simulated on two-dimensional substrata with multifractal distributions of activation energy of diffusion. For this caseX (withX〉2) depends on the energetic heterogeneity of the substrata (X=2 for an homogeneous substratum). The obtained results point out that the fractal chemical kinetic behaviour is not only restricted to the low concentration regime, but it also covers the medium coverage regime, i.e. it holds for a monolayer surface coverageθ≦0.4 in fractal percolating clusters.
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  • 33
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-oxide chalcogenide glasses based on more than one network former species have certain advantages for applications as solid electrolytes in batteries. To elucidate the influence of competitive glass-formation on the structural and motional properties of ionically conductive chalcogenide glasses, the system (Li2S)0.67[(B2S3)1−y (P2S5) y ]0.33 has been characterized comprehensively by DSC, electrical conductivity and6Li,7Li,31P, and11B solid state NMR techniques. The data obtained provide the first systematic characterization of the coformer effect in a chalcogenide glass system. Homogeneous glassy samples are formed fory=0.3 and 0.9≦y≦1.0, and microphase separated glasses for 0≦y≦0.2. The presence of a coformer leads to an increase in the electrical conductivity and a decrease of the activation energy, as compared to either binary system (Li2S-B2S3 or Li2S-P2S5), but only if homogeneous glasses are formed. The NMR data, in conjunction with systematic DSC and NMR studies of the binary systems (Li2S)x(B2S3)1−x (0.50≦x≦0.75) and (Li2S) x (P2S5)1−x (0.50≦x≦0.70), lead to the following conclusions: 1)11B MAS-NMR is well-suited to quantitate the amounts of three- and four coordinated boron atoms; in the binary glasses, the fraction of four-fold boron (N4) increases with decreasing Li2S/B2S3 ratio; in the ternary glasses N4 increases with increasingy. 2)31P MAS-NMR spectra of the binary glasses discriminate between three different phosphorus microenvironments, assigned to sulfide-analogs of metaphosphate, pyrophosphate, and orthophosphate species, respectively. These results suggest the applicability of network modification models originally developed for oxide glasses. For the ternary glasses, the DSC and NMR data of glasses with low phosphorus contents are consistent with a phase separation model involving a Li-rich thioborate glass that contains all of the phosphorus component and a glass phase less rich in lithium containing the four-fold boron atoms. In addition to the structural studies, the7Li spin-spin relaxation times (T 2) are used to characterize the mobility of the Li atoms. The activation energy of Li motion, determined from temperature dependentT 2 measurements and analyzed by using BPP theory differs from that determined from conductivity measurements by a factor of 2–3, possibly reflecting the inapplicability of this theory to the lithium diffusion process.
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  • 34
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    Applied physics 49 (1989), S. 413-424 
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 85.80 ; 65.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
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  • 35
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    Applied physics 49 (1989), S. 61-64 
    ISSN: 1432-0630
    Keywords: 66.30 ; 63.10
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A non-local theory of hopping conduction is developed on the basis of the relaxation mode theory. An application of this theory to the ultrasonic attenuation is made, in which the attenuation by particles hopping on a doubly periodic lattice is investigated in the presence of the piezoelectric coupling. It turns out that in case of particle-hopping on a lattice with equivalent sites, the attenuation formula of Hutson and White can be reproduced when the lowest order approximation inq, the wave number, is taken into account.
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  • 36
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carbon doping of GaAs using a KrF excimer laser to form a p-type active layer is described. Methane gas (CH4) was used as a source of the C acceptor. Various quantities such as sheet resistance, surface carrier density, Hall mobility, and depth profile of C-doped GaAs are measured as the functions of laser fluence and laser pulse. It is shown that C atoms are doped only within a limited depth as shallow as 50 nm or less and with extremely high concentration exceeding 1×1021 cm−3. The maximum activation efficiency is found to be 69.0%. Laser induced changes of surface morphologies and electron diffraction patterns are also discussed. Furthermore, non-alloyed ohmic contacts using laser-doped p-type GaAs are demonstrated.
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  • 37
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    Applied physics 49 (1989), S. 25-31 
    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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  • 38
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    Applied physics 49 (1989), S. 55-60 
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.10 ; 64.60 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polymer solid electrolytes from a PEO-NaI system were mixed with Nasicon and Al2O3 powders. As a result an increase of ionic conductivity exceeding 10−1 S/cm at room temperature was observed for both cases. This increase was due to a higher concentration of amorphous phase which resulted apparently from a higher nucleation rate during the solidification process. The samples were studied using impedance spectroscopy, X-ray diffraction, electron microscopy, NMR, and other techniques.
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  • 39
    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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  • 40
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    Applied physics 49 (1989), S. 117-121 
    ISSN: 1432-0630
    Keywords: 66.30 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ac-impedance of compressed powders of the ion conducting zeolites chabazite and 13X has been measured. The porosity of the samples was changed by applying an external pressure. The impedance diagrams were suppressed semicircles. The impedance as well as the suppression angle decreased with increasing relative density. This shows that the particle-particle contact gives a significant contribution to the overall impedance. The frequency dependency of the current constriction at contact points between particles is described by a simplified equivalent network. The analytical expression is analogous to an equation for the impedance of fractal interphases leading to a constant phase angle element in the equivalent diagram.
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  • 41
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
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