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  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 65-71 
    ISSN: 1057-9257
    Keywords: Optoelectronics ; Non-linear optics ; Molecular crystals ; Polarizability ; Hyperpolarizability ; Local field ; Dipole interactions ; MBANP ; NMBA ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Components of the crystal quadratic susceptibility tensor x(2) for second-harmonic generation are calculated for the title compounds 2-(α-methyl benzylamino)-5-nitropyridine (MBANP) and 4-nitro-4'-methyl(benzylidene aniline) (NMBA). Input data are the crystal structure and refractive indices and CNDO hyperpolarizabilities. The calculations also yield effective polarisabilities and local electric fields. Susceptibility components reach 66 pm V-1 in MBANP and 27 pm V-1 in NMBA in the crystal axes; agreement with experiment is poor for MBANP but satisfactory for NMBA. These features seem to reflect the better defined charge transfer axis in NMBA. Screened dipole-dipole interactions calculated from CNDO dipole moments stabilise MBANP by 70 kJ mol-1 and NMBA by 20 kJ mol-1 and imply permanent electric fields of a few GV m-1.
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  • 2
    ISSN: 1057-9257
    Keywords: High Tc superconductors ; Precursors ; Copper ; Calcium ; Barium ; Yttrium ; Strontium ; Fluorinated β-dikeonates ; Ethanol ; Tetradecafluorononanedione ; Decafluoroheptanedione ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The new β-diketone 1,1,1,2,2,3,3,7,7,8,8,9,9,9-tetradecafluorononane-4,6-dione (HTDFND) has been prepared and employed in the formation of complexes of Cu, Ca, Sr, Ba and Y. Complexes of the same metals derived from the β-diketone 1,1,1,2,2,3,3,7,7,7-decafluoroheptane-2,4-dione (HDFHD) have also been prepared. In general the compounds have the formula [M(TDFND)2H2O] or [M(DHFD)2H2O], although the yttrium complexes are [Y(β-diket)3] · xH2O (β-diket ≡ TDFND (x = 3) or DFHD (x = 2)). The complexes have been characterised by analytical and spectroscopic means and by a crystal structure of [Cu(TDFND)2EtOH] obtained by recrystallisation of [Cu(TDFND)2H2O] from aqueous ethanol. Crystal data for [Cu(TDFND)2EtOH]: triclinic, P̄1, a = 11.249(4) Å, b = 12.331 (2) Å, c = 12.890(2) Å, α = 96.89(2)°, β = 108.93(3)°, γ = 109.63(3)°, V = 1541.54 Å3, Z = 2. The complex is square pyramidal with the four oxygen atoms of the β-diketonates occupying the basal sites and the oxygen atom of the co-ordinated ethanol molecule in the apical position. The C3F7 ligands take up an extended staggered configuration in order to minimise steric repulsions. The complex is monomeric with intermolecular distances all greater than 4 Å. Simultaneous thermal analysis at 1 atm reveals that all the compounds lose water but then sublime, usually completely without decomposition. [Ba(TDFND)2H2O] is the first barium complex for which this is the case and it can be dehydrated to give [Ba(TDFND)2], which is also volatile but becomes less volatile with time. [Ba(TDFND)2H2O], [Sr(TDFND)2H2O] and [Ca(DFHD)2H2O] are suitable precursors for the growth of MF2 on silicon substrates. Complete orientation in the (111) direction is observed. Changes in the film growth rate with time for all the precursors are attributed to sample decomposition ([M(DFHD)2H2O], M ≡ Ca or Sr) or to slow reorganisation of the crystal structure ([Ba(TDFND)2H2O]). Layers with Y:Ba:Cu ratios close to the required 1:2:3 have been grown using [Y(DPM)3], [Cu(DPM)2] and [Ba(DFHD)2H2O] (DPM ≡ 2,2,6,6-tetramethylheptane-3,5-dionato).
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 139-145 
    ISSN: 1057-9257
    Keywords: Thin film ; Metal sulphide ; Photography ; Lead sulphide ; MSTF ; Photo-accelerated ; chemical deposition ; Solar irradiation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Metal sulphide thin film (MSTF) photography based on photo-accelerated chemical deposition (PACD) of PbS thin films is described. Here an intensity distribution over the surface of a growing PbS thin film produces a thickness variation (0.06-0.15 μm) of the film which, when viewed under daylight, yields a specularly reflective image. Under 800 W m-2 of solar radiation a bluish MSTF photographic image (0.15 μm film thickness) on a coppery-bronze background (0.08 μm) is obtained in the PACD of PbS at the end of 25 min deposition when a high-contrast photographic negative is used as the object. The best contrast of 0.46 in the PbS MSTF photography in the reflection mode is obtained under the above condition of exposure when the optical transmission in a photographic negative in the image area is ∽30% and that in the background is ∽1%. The contrast available in the transmission mode in the MSTF photographic image is considerably less: ∽0.28 (maximum) for optical transmission of 1% and 100% in the background and image areas of the photographic negative respectively.
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 189-195 
    ISSN: 1057-9257
    Keywords: Ellipsometry ; GaAs ; Silicon ; Surface roughness ; MBE ; SEM ; Rotating polariser multiple-angle-of-incidence ellipsometer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.
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  • 5
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 203-207 
    ISSN: 1057-9257
    Keywords: Growth ; Silicon carbide ; Monocrystals ; Vapour phase ; Diffusion ; Supersaturation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour (n), the equilibrium vapour concentration (ns) and the supersaturation (α = [(n - ns)/ns] × 100%) in the crystal growth zone at different radial and axial gradients is carried out by solving the Laplace equation in cylindrical co-ordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data, which gives the possibility of explaining some of the observed peculiarities during SiC crystal growth from the vapour phase by the sublimation method.
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  • 6
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    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 229-233 
    ISSN: 1057-9257
    Keywords: Indium sulphide ; Metal-organic chemical vapour deposition ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
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  • 7
    ISSN: 1057-9257
    Keywords: Monolayers ; Langmuir-Blodgett technique ; Bacteriorhodopsin ; Halobacteria ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Organised films containing oriented patches of purple membranes and consisting of 15-75 layers and approximately 1000 layers were fabricated by the Langmuir-Blodgett and electrophoretic sedimentation techniques respectively. ‘Surface pressure vs. molecular area’ isotherms for monolayers of purple membranes suspended in hexane and deposited on the air/water interface were studied. Circular dichroism and absorption spectroscopy were used to investigate the effect of an organic solvent on the chromophore binding site in the purple membranes. Kinetic methods based on flash excitation were employed to determine the influence of the film deposition conditions on the photoelectric response of bacteriorhodopsin and on the M412 intermediate relaxation. Structural characteristics for multilayers prepared from water and hexane purple membrane suspensions were determined by low-angle X-ray scattering. The influence of the layer deposition conditions on the electrical, physical and photoelectrical properties of ordered structures containing bacteriorhodopsin is discussed.
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  • 8
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 127-132 
    ISSN: 1057-9257
    Keywords: α-sexithienyl ; field effect transistor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A field effect transistor (FET) has been fabricated with the hexamer of thiophene (α-sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of the origin of the instability in the electrical performance. From this study it is confirmed that charged species, possibly chemical impurities present in the processed material, can migrate through the film under an applied electric field, even at room temperature.
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 147-158 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Molecular three-centre electron transfer (ET) systems contain an intermediate electronic bridge group state in addition to the donor and acceptor states. This feature is encountered in long-range ET patterns of metalloproteins, in bacterial photosynthetic reaction centres, in electrochemical processes at modified metal electrodes and in hypothetical or real molecular shift register and photodiode device-like systems. Overall ET is by superexchange when the intermediate group energy is high. When the energy is low enough that the state is temporarily populated, a range of vibrational features arise depending on the vibrational coupling and relaxation time of the intermediate state. In external fields these properties induce characteristic ‘switch’ effects reflected in rapid changes in the current derivatives and other features in the current-voltage relations. We provide a quantum mechanical frame for three-centre ET in such molecular systems. The theory rests on second-order perturbation theory. In contrast to most applications of superexchange concepts, the theory includes explicitly nuclear coupling in the intermediate state and is valid both for high energy superexchange and for low-energy populated intermediate states. Moreover, mild, finite resonances arise in the transition regions between the various energy ranges represented by analytical rate constants. The theory is appropriate to the molecular electronic behaviour of several biological and synthetic three-level ‘switch’ ET systems.
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 11
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 1-8 
    ISSN: 1057-9257
    Keywords: Alkaline earth ; Calcium ; Ligand flexibility ; Magnesium ; Melting point ; Metallocene ; Phase transformation ; Volatility ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of two equivalents of KCp3i (Cp3i ≡ 1,2,4-(i-Pr)3C5H2) with MgBr2 in Et2O produces the base-free metallocene (Cp3i)2Mg in high yield; the similarly prepared organocalcium complex (Cp3i)2Ca, although initally isolated as an oil, forms a crystalline solid on standing for several months. Crystals of (Cp3i)2 CA are tetragonal, space group P42/n, with a = 18.147(4), c = 15.996(4) Å, Å and Dcalc = 1.066 g cm-3 for Z = 8. Lease-squares refinement based on 2044 reflections led to a final R-value of 0.072. The complex possesses a metallocene geometry that is slightly bent; the average Ca-C distance is 2.62(2) Å and the right centroid-Ca-ring centroid angle is 169.7°. Comparison of these complexes with previously reported alkaline earth metallocenes suggests that the volatility of the metallocenses depends primarily on the degree of aggregation in the solid state, whereas the melting point of the nonomeric compounds varies with the asymmetry and ligan flexibility in the complex.
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  • 12
    ISSN: 1057-9257
    Keywords: Amphiphilic indandione-1,3 pyridinium betaine derivatives ; Langmuir-Blodgett monolayers ; Monolayer spectral characteristics ; Simulation of molecular structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The molecular structure and optical properties of a monolayer at the air/water interface of novel amphiphilic derivatives of indandione-1,3 pyridinium betaine (IPB) with different lengths of the aliphatic tail, namely C1lIPB and C17IPB, have been studied using optical absorption techniques and computer simulation approaches.The compression π-A isotherm of the C17IPB monolayer and computer simulation of its molecular structure show that there may exist two energetically stable molecular configurations, one with antiparallel orientation of the dipole moments of the C17IP ‘heads’ in the low-pressure region at π = 5-32 mN m-1 and the second (after a distinct phase transition at π = 33 mN m-1) with parallel orientation of the dipoles, with different tilt angles and areas per molecule. For C11IPB only the first structural phase is observable.The compression-induced changes in spectral characteristics of the two structural phases go in diametrically opposite directions. In the low-pressure phase compression induces a red shift and an increase in intensity of the S1 absorption band, while in the high pressure phase a blue shift and a decrease in the intensity of this band are observed. These spectral changes correlate reproducibly with the compression π-A isotherms. Measurements of absorption dichroism confirm the change in the tilt angle at the phase transition pressure. The compression-induced spectral changes have been substantiated by the results of quantum chemical calculations.
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  • 13
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 139-153 
    ISSN: 1057-9257
    Keywords: X-ray resists ; Electron beam ; Acrylate and methacrylate polymers ; Polysulphones ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The optimisation of the lithographic performance of negative-working electron beam resists is developed through consideration of the radiation chemistry of crosslinking of representative materials, typically epoxy-functionalised polymers and polystyrene and its derivatives. Similarly, the lithographic behaviour of positive-working systems based on radiation-induced chain scission reactions is discussed with reference to acrylate and methacrylate polymers and polysulphones. The difficulties encountered in devising desirable working systems based on novolacs are considered and contrasted with the promise offered by recent developments arising from the extension of chemical amplification techniques to the electron beam lithographic domain.
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  • 14
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    Advanced Materials for Optics and Electronics 2 (1993), S. 105-105 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 15
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    Advanced Materials for Optics and Electronics 4 (1994), S. 179-190 
    ISSN: 1057-9257
    Keywords: Molecular computing ; Molecular neurocomputer ; Molecular image-processing devices ; Computational complexity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Potentialities for implementing simple neural information-processing devices based on chemical and biochemical dynamical media are discussed. Pilot ‘hardware’ models of neural molecualr devices that able to perform image-processing operations were constructed.
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  • 16
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-233 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 17
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 149-150 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 18
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 156-156 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 19
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 207-209 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 20
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    Advanced Materials for Optics and Electronics 2 (1993), S. 233-236 
    ISSN: 1057-9257
    Keywords: Polyaniline ; Device processing ; Photolithography ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Solvent-cast polyaniline films have been deposited by spin coating and photolithographic techniques used to pattern the films to a resolution of 15-20 μm. This approach is then used successfully to deposit the polymer on the gate areas of an array of silicon field effect transistors.
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  • 21
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    Advanced Materials for Optics and Electronics 2 (1993), S. 237-244 
    ISSN: 1057-9257
    Keywords: Polyalkylthiophenes ; Transmission spectroscopy ; Polymer films ; Thermochromism ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Polyalkylthiophene thin films have been prepared to enable the characterisation of the films with transmission spectroscopy and profilometry for the first time. The optical properties of the films as a function of annealing temperature are discussed. The changes in absorption with time are related to thermochromism.
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  • 22
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    Advanced Materials for Optics and Electronics 2 (1993), S. 245-268 
    ISSN: 1057-9257
    Keywords: Electron diffraction ; Non-linear optics ; Organic thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The experiments described in this paper were undertaken in order to obtain information about the relationship between the structure and non-linear optical properties (second-harmonic generation) of organic thin films. For this purpose, two closely related dyes, diones and tetrones, were compared, both of which are shown to have large hyperpolarisabilities. Their microscopic properties are investigated by conformational analysis and electron diffraction. It could be shown that detailed knowledge about the structure and the adjacent neighbour packing can be obtained from conformational analysis and electron diffraction in order to understand the non-linear optical properties of the two dyes.
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  • 23
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    Advanced Materials for Optics and Electronics 2 (1993), S. 301-312 
    ISSN: 1057-9257
    Keywords: Remote PECVD ; Capacitive coupling ; Silane ; Nitrogen ; Silicon nitride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we describe the growth of silicon nitride from nitrogen and silane for the first time by capacitively coupled remote PECVD. We report on the effect of process parameters on the composition and properties of the deposited films and we show that by adjustment of these parameters it is possible to produce high-quality material which could be of interest for electronic applications. Of particular note is that the growth rate is about one order of magnitude higher than any previously reported for nitride growth with remote PECVD using molecular nitrogen as the nitrogen source. We also discuss the mechanism of growth and propose that electron excitation of nitrogen and silane occurs in the gas phase, producing SiHx species which are adsorbed on the growing surface. The nitrogen is then incorporated into the layer by heterogeneous reaction.
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  • 24
    ISSN: 1057-9257
    Keywords: Amphiphilic indandione-1,3 pyridinium betaine derivatives ; Langmuir-Blodgett films ; Simulation of electronic structure ; Optical properties ; Second-harmonic generation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The synthesis of a new polar amphiphilic derivative of indandione-1,3 pyridinium betaine (IPB) with different lengths of the aliphatic tail, containing 11 (C11IPB) and 17 (C17IPB) carbon atoms respectively, is described. The electronic structure (charge distribution, energy spectra, dipole moments in ground and excited states) of the IPB molecule has been calculated in the framework of the MO CNDO methods. Studies of compression π-A isotherms of these compounds show that C17IPB forms two stable phases of monolayer on the water surface, one in the 10-30 mN m-1 and the other in the 35-50 nM m-1 surface pressure region. The corresponding areas A0 per molecule are 37 and 33 Å2 respectively. Techniques for the preparation of Langmuir-Blodgett (LB) multilayers of C17IPB in the high-pressure region (π = 40 mN m-1) on glass, quartz or sapphire substrates are described. C17IPB forms LB multilayer films of Z-type configuration with oriented dipole moments. Ellipsometric data, luminescence spectra and results of preliminary studies of second-harmonic generation in these LB films are presented.
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  • 25
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    Advanced Materials for Optics and Electronics 2 (1993), S. 43-51 
    ISSN: 1057-9257
    Keywords: Plasma processing ; Plasma deposition ; Plasma oxidation ; Dielectrics Semiconductor/insulator interfaces ; Metal-oxide-semiconductor devices ; Multilayer dielectrics In situ processing ; Oxides ; Nitrides ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the conventional high-temperature thermal oxidation and rapid thermal oxidation processes used to fabricate commercial SiO2/Si structures at ∼850-1050°C, the SiO2/Si interface and the bulk oxide are formed at the same time. We have developed a low-temperature process for the formation of SiO2/Si structures at 200-300°C that separately controls and optimizes the properties of the SiO2/Si interface and the bulk SiO2. This has been accomplished by separating interface formation by plasma-associated oxidation from bulk oxide plasma-assisted deposition. The oxidation step (i) removes residual C contamination from the Si surface, (ii) prevents N incorporation at the interface from the O atom source gas N2O and (iii) forms an oxide layer ∼0.6 nm thick and an SiO2/Si interface with a trap density, Dit ≈(1-4) × 1010 cm-2 eV-1. This type of process has also been extended to the deposition of multilayer oxide-nitride-oxide dielectrics.
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  • 26
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    Advanced Materials for Optics and Electronics 1 (1992), S. 197-201 
    ISSN: 1057-9257
    Keywords: Lithography ; SAW device ; Methylbenzylamino-5-nitropyridine ; Gold/titanium bilayer ; Shadow masking ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A wide range of applications which involve organic crystalline materials require the metallisation of low-molecular-weight compounds. Conventional lithographic techniques used in silicon fabrication technology use high-temperature processing methods which are unsuitable for organic materials. Gold/titanium bilayer and shadow-masking techniques were found to provide suitable solutions to the problem of metallisation of these materials and allowed fabrication of a surface acoustic wave (SAW) device with (-)-2-α-methylbenzylamino-5-nitropyridine (MBANP) as substrate.
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  • 27
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    Advanced Materials for Optics and Electronics 1 (1992), S. 211-220 
    ISSN: 1057-9257
    Keywords: Photocurrent ; Morphology ; Cds ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The influence of the chemical bath composition on the photocurrent response, film morphology and optical transmittance of chemically deposited CdS thin films is reported. The bath parameters such as concentrations of triethanolamine, thiourea, ammonia and cadmium acetate and the bath temperature controlled the photosensitivity, photocurrent decay, morphology and optical transmittance of the films. The optimum concentration of the bath for getting good-quality photosensitive films with good optical transmittance was identified in this investigation.
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  • 28
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    Advanced Materials for Optics and Electronics 3 (1994), S. 41-49 
    ISSN: 1057-9257
    Keywords: Front optical switching ; Optical non-linearities impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present a dynamic theory related to experiments on the induced transmission of doped CdS crystals under pulsed laser excitation at 2 K at frequencies just below the band gap. Numerical simulations of the optical switching front which describes the non-linear spatio-temporal dynamics of the switching process from low to high transmittivity and back are performed for two different two-level models. These are associated with two different bleaching mechanisms of the acceptor-conduction band transition.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 67-72 
    ISSN: 1057-9257
    Keywords: Anisotropy ; Dissolution ; Microrelief ; II-VI semiconductor compounds ; Light figures ; Etching ; Electron beam lasers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The shape, crystallographic orientation and size of microrelief elements of various surfaces of CdS, ZnSe and ZnO monocrystals after chemical etching have been studied. When illuminated with a focused laser beam, the microrelief creates a symmetric light pattern, or light figures, on the opposite surface whose shape corresponds to the crystal symmetry.The effects of the dissoltion rate and etching time on the form, size and angles of the microrelief elements in the temperature interval from 263 to 333 K were investigated. During etching, laser light was also used to convert the process of selective etching into a polishing process. To elucidate the relationship between the crystallographic orientation of the microrelief elements and the dissolution anisotropy, mean etching rates were determined and polar diagrams of resistance to dissolution were constructed for {1120} and {0001} by the Gross method. The relation between the kinetics of dissolution and the structure of the chemical bonds is discussed.The light figures formed by the surface microrelief enabled us to carry out the approximate orientation of semiconductor planes and solid samples. In the early stages of dissolution one may determine the density and distribution of the microscopic etch pits. The microrelief created on the side surfaces and the ‘fully reflected’ mirrors of II-VI semiconductor lasers pumped by electron beam or optical radiation promote the multiple enhancement of laser power and efficiency.
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  • 30
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    Advanced Materials for Optics and Electronics 3 (1994), S. 95-101 
    ISSN: 1057-9257
    Keywords: Stokes shift ; Quantum wells ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Excitonic energy levels have been calculated in CdTe quantum wells with Cd1-xMnxTe barriers. It has been shown that the introduction of small-scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line-widths can remain narrow. A criterion for the existence of high-quality interfaces, based on optical spectra, is described.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 131-136 
    ISSN: 1057-9257
    Keywords: II-VI compound ; SrS : Ce ; Photoluminescence ; Concentration quenching ; Phosphorescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The luminescence efficiency of SrS: Ce powders in the doping range from 0.01 to 1.0 at.% was investigated by photoluminescence decay studies. The radiative decay time of Ce3+ in SrS was determined to be 27 ns. The onset of concentration quenching at concentrations higher than about 0.7 at.% has been obtained. The photoluminescence spectrum of Ce3+ exhibits two emission bands as a consequence of the ground state splitting. The Huang-Rhys factor of the 5d-4f transition was estimated to be about 6. The inhomogeneous broadening of the emission band of samples with higher doping level has been investigated by site-selective and time-resolved spectroscopy.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 233-234 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 4 (1994), S. 239-239 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 4 (1994), S. 241-242 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 3 (1994), S. 57-65 
    ISSN: 1057-9257
    Keywords: Energy spectrum ; 2D systems ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: An exact solution for the zero boundary condition of the problem of carriers in spatially confined gapless semiconductors in a magnetic field is presented. Three cases are analysed: (i) the semiconductor occupies a half-space and the magnetic field orientatin is H ⊥ n (n is the surface normal); (ii) and (iii) a film of a gapless semiconductor at two orientations of the magnetic field, i.e. H ⊥ n and H | n respectively. It is shown that since the energy spectrum of gapless semiconductors is formed by strong relativistic spin-orbit interaction, significant peculiarities of the quantisation of the electron energy spectrum occur in all cases considered. Experiments to check the results obtained are discussed.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 281-286 
    ISSN: 1057-9257
    Keywords: Nonlinear ; Oscillation ; Surfactant ; Higher harmonics ; Dynamic response ; Chemical sensor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new chemical sensing system using an electrical oscillator has been developed. This sensing system measures the electrical ‘non-linearity’ at the surface of an electrode immersed in a test solution: a sinusoidal voltage is applied to the electrode and the higher harmonics of the output current are obtained by Fourier transformation. This sensing system has been used to detect and quantify surfactant molecules in solutions. The relative intensity P2/P1 of the peaks of the second (P2) and first (P1) harmonics in the output current was found to be linearly correlated with the logarithms of the concentrations of cationic surfactants such as cetylpyridium bromide (CPB) and cetyl-N,N,N-trimethylammonium bromide (CTAB), but not with those of the anionic surfactant sodium dodecyl sulfate (SDS) or the neutral surfactant Triton X-100. The reproducibility of this sensing system was shown to be excellent.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 293-297 
    ISSN: 1057-9257
    Keywords: Liquid crystals ; Spiropyran ; Holographic grating ; Optical data storage ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The application of liquid crystalline siloxanes consisting of pentamethylhydrocyclosiloxane cores with attached cholesteryl-, biphenyl- and photochromic spiropyran-based mesogens as reversible optical data storage materials is demonstrated by grating formation with an argon ion laser beam operating in the UV and visible regions. Erasure of the gratings with heat or visible radiation was possible.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 3-15 
    ISSN: 1057-9257
    Keywords: Alumina ; Silica ; Aluminosilicate ; Metal-organic chemical vapour deposition ; Thin film ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Amorphous (Al2O3)x(SiO2)y thin films have been grown by atmospheric pressure metal-organic chemical vapour deposition using the single-source precursor [Al(OSiEt3)3]2. Characterisation by X-ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low-melting Lewis acid-base adduct Al(OSiEt3)3(NH3); however, no nitrogen incorporation was observed in these deposited films.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 17-23 
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett ; M | LB | M ; electrical breakdown ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Metal 1 | C16H33-Q3CNQ LB film | metal 2 structures exhibiting asymmetric, non-linear I/V characteristics have been fabricated using the Langmuir-Blodgett (LB) technique with LB film thicknesses as small as a single monolayer. When such junctions are subjected to low biases, the I/V traces exhibit little or no asymmetry, but as the applied biases increase, so the I/V asymmetry becomes more evident. The largest applied voltages before breakdown are of the order of 1 V, which represents an E-field of order 108 V m-1. This breakdown under high biases increases the junction conductance and the I/V traces become very noisy. More interestingly, it has been observed that after such breakdown it is possible for the junction to recover on reduction of the bias. It is observed that recovery is not always immediate and may require several voltage sweeps. A subsequent increase in bias will cause breakdown at the same bias as the first breakdown, indicating that no permanent damage has been caused.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 43-46 
    ISSN: 1057-9257
    Keywords: Zinc sulphide ; MOCVD growth ; t-Butyl mercaptan ; Dimethylzinc ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: ZnS has been grown on GaAs(100) substrates by atmospheric pressure metal-organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn) and t-butyl mercaptan (t-BuSH). The effects of the reactant gas phase molar ratio and the growth temperature on the characteristics of the material grown have been investigated. The structural quality of the layer is demonstrated by X-ray rocking curve half-widths of less than 300 arcsec for the epilayers. There is little significant pre-reaction and the layers are of excellent surface morphology and layer uniformity.
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  • 41
    ISSN: 1057-9257
    Keywords: Chemical vapour deposition ; Copper ; Copper oxide ; Scanning electron microscopy ; MOCVD ; Surface morphology ; Carrier gas ; Cu(acac)2 ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The unsubstituted bis-β-diketonato complex of copper, Cu(acac)2 (acac = pentane-3, 5-dionato), has been used to deposit both elemental copper and copper oxide thin films by metal-organic chemical vapour deposition (MOCVD). For all Cu(II) bis-β-diketonates, growth of oxygen-free layers requires the breakage of four copper-oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.
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    Advanced Materials for Optics and Electronics 1 (1992) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 1 (1992), S. 99-103 
    ISSN: 1057-9257
    Keywords: Copper compound ; Copper indium diselenide ; Indium compound ; Low-temperature synthesis ; Photovoltaic materials ; Selenides ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of triscyclopentadienylindium with cuprous selenide in 4-methylpyridine at 25°C produces polycrystalline copper indium diselenide.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 123-126 
    ISSN: 1057-9257
    Keywords: Gas sensor ; Alarm device ; Solid electrolyte ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new gas alarm is presented which is based on solid electrolytes with high ionic conductivities. The operating principle of the device is the compensation of the cell voltage and measurement of the direction of the electrical current. Also, the general microelectronic circuit designs are discussed. Several advantages are found in comparison with other types of gas sensors.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 117-121 
    ISSN: 1057-9257
    Keywords: Tin(II) sulphide ; Tin(IV) oxide ; Photoconductor ; Air annealing ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The thermal decomposition of chemically deposited SnS thin films to SnO2 films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO2 film involves the creation of non-stoichiometric SnS, SnS + SnS2 mixed phase and non-stoichiometric SnO2 (i.e. SnO2 — x), as concluded from X-ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO2 thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 105 Ω/□ and an activation energy (Ea) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS2 phase to the non-stoichiometric SnO2 - x film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 109 Ω/□ with the value of Ea at 1.3 eV, indicating an improvement in the degree of stoichiometry.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 75-82 
    ISSN: 1057-9257
    Keywords: Novolac resins ; Positive-working resists ; DNQs ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The performance of novolac-diazonaphthoquinone-based positive-working resists is discussed in terms of the molecular weight distributions and microstructures of the novolac resins and the structural variations in the photoactive dissolution inhibitor. Modelling studies leading to recent improvements allosing the delineation of 0.35 μm line and space pattens by ensuring a focal depth of 105 μm are outlined. Consideration is also given to the new problems such as pivotal shift and halation that arise in the application of high-resolution photolithography using novolac-diazonaphthoquinone resists.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 343-347 
    ISSN: 1057-9257
    Keywords: Dimethyzinc ; Adduct ; MOVPE ; GaAs (p-doping) ; AlGaAs (p-doping) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The adduct between dimethylzinc and triethylamine has been used as a p-dopant source in the growth of GaAs and Al0.3Ga0.7As alloys by metalorganic vapour phase epitaxy (MOVPE). The dopling efficiency of this adduct in these alloys and in InP is lower than that of dimethyl zinc.
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  • 48
    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Generation ; Longitudinal electron beam pumping ; Microrelief ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The power characteristics of electron-beam-pumped emitters based on II-VI compounds have been stukdied. The use of a microrelief with direction-selective reflective properties instead of a totally reflecting miror has made it possible to provide effective sukppression of closed non-characteristics and efficiency of lasers and to make them suitable for obtaining generation with high efficiency in a number of media, in particular YAG:Nd3+, KGW:Nd3+ and Lif:F2+ (OH), at room temperature.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 373-380 
    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Streamer ; Electric discharge ; Luminescence ; Generation ; Crystallographic orientation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Some results of Investigations on the crystallographic orientation, luminescence and stimulated emission of streamer discharges in monocrystals of hexagonal CdS, CdSe and ZnO and cubic Znsand Snseare presented.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 401-405 
    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSe ; Growth mechanism ; Surface chemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In situ optical reflection measurement was employed to study surface processes during the MOVPE growth of ZnSe films under an alternate supply of diethylzinc (DEZn) and dimethylselenide (DMSe) using H2 and/or N2 as carrier gases. We have found that the time-dependent reflection signal exhibits a unique saw-toothed pattern during the DEZn supply, which is attributed to the adsorption and structural change of the DEZn. In contrast, the influence of DMSe on the time-dependent signal appears to be rather marginal. A growth mechanism is proposed based on these experimental results, through which the important role of ambient hydrogen is discussed.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 417-421 
    ISSN: 1057-9257
    Keywords: Amorphous quantum wells ; Intersubband transitions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Intersubband absorption has been observed in undoped amorphous multiple-quantum-well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non-equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm-3) in the ground conduction subband.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 243-247 
    ISSN: 1057-9257
    Keywords: Borane derivatives ; Non-linear optics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Samples of {4-(dimethylamino) stilben Z & E 4'-yl} dimesityl borane (BNS) were synthesised and investigated for their non-linear optical properties. The results show that the quadratic hyperpolarisability of the Z-isomer is smaller than that of the E-isomer, the beta value found for the latter being as high as 60 × 10-30 esu.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 255-259 
    ISSN: 1057-9257
    Keywords: LPCVD ; PECVD ; In-situ doping ; polycrystalline silicon ; VLSI ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In general, high-temperature processes cause thermal stresses and diffusion of dopants, resulting in reduced device yields. It is thus desirable to reduce the number of high-temperature steps and the use of an in situ doping technique eliminates one such step. In this investigation, low-pressure chemical vapour deposition (LPCVD) and plasma-enhanced chemical vapour deposition (PECVD) have been utilised to deposit in situ doped polycrystalline silicon films. The process characteristics and properties such as spreading resistance, grain structure, etch rate using a plasma and dopant concentrations of these films have been investigated and explained using a simple model for dopant activation and grain growth. It is shown that good-quality films suitable for VLSI can be produced.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 151-161 
    ISSN: 1057-9257
    Keywords: MOVPE ; (Hg, Cd)Te ; Decomposition products ; GC-MS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The pyrolysis reactions of di-isopropyl telluride and dimethyl cadmium, both alone and in combination and with and without mercury, have been studied using the technique of gas chromatography-mass spectrometry (GC-MS). For example, when mercury and dimethyl cadmium are mixed in hydrogen at the growth temperature (370°C), the volatile products observed are methane, ethane and dimethyl mercury. In contrast, when di-isopropyl tellurideis substituted for the cadmium precursor in this reaction, the products observed are propane, propene and 2,3-dimethylbutane with no volatile mercury-containing compounds. Heating the two organometallic precursors together at the growth temperature in the absence of mercury gives products expected from the pyrolysis of each one alone plus a number of interaction products such as 2-methylpropane. The results of these studies will be presented, a mechanism for the reactions proposed and the implications for MOVPE growth discussed.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 199-202 
    ISSN: 1057-9257
    Keywords: Zinc selenide ; Luminescence ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Although zinc selenide and related materials are promising for blue light-emitting diodes and lasers, present performance is unsatisfactory. The blue radiative efficiency at room temperature is low and the decay time of luminescence is correspondingly short. It is argued that the problem is non-radiative recombination by the Hall-Shockley-Read mechanism at deep levels and that the concentration of these levels must be high. Experimental evidence for the existence of such levels is presented. Characterisation and control of deep levels will be essential for progress in this area.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 209-215 
    ISSN: 1057-9257
    Keywords: Diffusion ; Cadmium telluride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The rates of diffusion of both Ga and Cu in CdTe have been measured over the temperature ranges 350-820 and 200-400°C respectively and the results are compared with the self-diffusion of Cd (350-920°C).In the case of the Cd self-diffusion the Arrhenius graph showed two active diffusion mechanisms, one dominating above 500°C and the other below. It suggested that in the temperature range 500-800°C the main defect responsible for diffusion was Cdi-, with a significant contribution at lower temperatures from the associated defect of the form (CdiVcd)x Below 500°C another mechanism predominated which was possibly due to residual impurities.The results for the diffusions were in close agreement with those obtained by other workers. The Ga diffusions showed a complex behaviour which suggested that two mechanisms were active simultaneously, one independent of Cd partial pressure and the other decreasing with increasing Cd partial pressure.It was concluded that CdTe would be suitable as a diffusion barrier to protect HgxCd1 - xTe devices from Ga contamination from GaAs substrates but would not be efficient at reducing Cu contamination from the substrate in the device.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 233-238 
    ISSN: 1057-9257
    Keywords: Solution growth ; THM ; HgCdTe ; CdZnTe ; Forced convection ; ACRT ; Solvent inclusions ; IR microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hg1 - xCdxTe and Cd1 - xZnxTe single crystals were grown by the tracwelling heater method (THM), applying two different techniques of artificially stirring the solution zone. Accelerated crucible rotation (ACRT) was used in a vertical growth arrangement and compared a technique with constant rotation around the horizontal axis of the ampoule. The dominant hydrodynamic mechanisms of noth methods are discribed by the rotating disc model and are suggested to be almost identical with respect to the growth conditions at the interface. Convective flow is effectively enhanced adhacent to the growing crystal, where the matter transport is regarded as the rate-limiting step of solution growth. Inclusion density analysis by IR microscopy was used to characterise the crystals of Cd1 - xZnxTe grown at different rates. It was shown that forced convection allows an increase in the crystal growth rate from a few mm day-1 with ACRT or horizontally rotating THM.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 269-274 
    ISSN: 1057-9257
    Keywords: Compensation defects ; PICTS ; CdTe ; Tikhonov regularisation ; III-posed problems ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A detailed analysis of photoinduced current transients of differntly grown CdTe:Cl samples was performed in the 100-130 K range in order to investigate the influence of the different growth techniques (sublimation, Bridgman method and travelling heater method (THM)) on the compensation defects. The transients were evaluated using a regularisation method (fast Tikhonov regularisation) as implimented in the program FTIKREG. The advantages of the regularisation method in comparison with the customary two-gate technique are demonstrated by the analysis of simulated data. It can be shown that the different growth techniques have only one level in common. Furthermore, the superposition of different traps can lead to wrong results using the conventional two-gate technigque. The temperature dependence of the relaxation times is evaluated and the corresponding trap parameters are determined.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 273-276 
    ISSN: 1057-9257
    Keywords: Liquid crystals ; Hydrogen bonding ; Phenols Stilbazoles ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Mesomorphic materials formed by hydrogen bonding between 4-alkoxystillbazoles and some phenols are described.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 265-271 
    ISSN: 1057-9257
    Keywords: Poly(ethy1ene oxide)-salt complexes ; Anionic mesogens ; Uncharged mesogens ; Isomorphous mixture ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The preparation and characterisation of novel ionic polymer liquid crystal complexes of poly(ethylene oxide)-Na+ with mesogenic anions and their uncharged structural analogues in homogeneous mixtures are described. The systems discused most fully are the anion of the phenolic mesogen 4-n-hexyloxybenzylidene-4-hydroxy aniline (1) with its uncharged analogue 4-n-hexyloxybenzylidene aniline (1a) and the anion of 5-(4-n-octyloxy-2,3-dicyanophenyleneoxycarbonyl)benzimidazo-le (2) and its uncharged analogue 4-octyloxy-2,3-dicyanophenyloxybenzoyl (2). Differential scanning calorimetry, wide angle x-ray diffraction and polarised light microscopy show that PEO-Na1/1a and PEO-Na2/2a are homogeneous mesogenic phases when Na1 or Na2 are present at 50% or less of the stoichiometric composition in complexes (EO : salt = 3 : 1) and the shortfall is made up from 1a or 2a uncharged analogues of 1a and related systems substituted by methoxy rather than hydrogen do not form homogeneous mixtures.
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  • 61
    ISSN: 1057-9257
    Keywords: Non-linear optics ; stilbazolium salts ; MOPAC calculations ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The synthesis of some optically non-linear stilbazolium salts is described. Since their solid state non-linearities were small, MOPAC5 was used to compare their relative molecular non-linearities.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 319-325 
    ISSN: 1057-9257
    Keywords: GaSb ; Photodiodes ; Schottky diodes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Oxide removal from GaSb surfaces by several wet chemical treatments and subsequent thermal annealing was investigated. Preferable wet chemical treatments by which surface oxides could be removed effectively at room temperature were evaluated in the experiments. This method can be effectively applied to fabrication processing of MBE GaSb photodoides and Au-GaSb Schottky doides. Low-reverse-leakage GaSb photodiodes and near ideal Au-GaSb Schottky diodes were thus obtianed.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 191-198 
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSSe ; GaAs substrate ; MOVPE ; Photoluminescence ; Quantum well ; Interface properties ; Growth interruption ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this work we report on ZnSxSe1 - x/ZnSe quantum wells grown by atmospheric pressure MOVPE on GaAs substrates. Diethylznc (DEZn), diethylselenium (DESe), diethylsulphur (DES) and H2S were used as source materials. Binary quantum wells with ZnSe or ZnS as barrier were usually grown in sets of 10 pairs on a 0.5 μm ZnSe or ZnS buffer, respectively. QWs with different well thicknesses (1-4 nm) show a typical shift to higher energies with decreasing well thickness and also a large decrease in PL intensity with increasing well thickness. Owing to the onset of relaxation above 5 nm well thickness, no PL emission could be observed. QWs of the same thickness but grown at different temperatures (420-520°C) show a broadened line shape with decreasing growth temperature. Growth interruption (3-50 s) also causes a broadening of the PL emission with decreasing interruption time. This is caused by interface reconstruction at higher growth temperatures and longer growth interruption. A ZnS buffer of 0.5 μm improves the PL line shape compared with a ZnSe buffer.ZnSxSe1 - x/ZnSe single and multiple QWs (Lz = 1-4 nm) were grown to reduce the strain in the structures. A typical quantum confinement energy shift of 160 meV for the 1 nm well can be observed in ZnS0.68Se0.32/ZnSe QWs. In comparison with the binary QWs, the FWHM could be reduced by about a factor of two to 34 meV. This improvement was obtained by an optimisation of the switching process to prevent the desorption of sulphur from the ZnSSe during the growth interruption.
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    Advanced Materials for Optics and Electronics 4 (1994), S. 243-251 
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett film ; Stilbazole ; Metal complex Iridium ; Rhodium Pyroelectricity ; Alternate layer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Complexes of 4-alkoxystilbazoles with iridium and rhodium form stable Langmuir layers at the air-water interface even when the alkoxy chain is relatively short (C5-C12). The surface pressure-area isotherms indicate that condensed molecular monolayers are obtained. The area per molecule of each compound in its monolayer form is typically 0.60 nm2, which agrees well with the cross-sectional area of the [Ir(CO)2CI] or [Rh(CO)2CI] head group predicated using molecular models. This suggests that the molecules are oriented with the metal moiety close to the water surface and their alkoxystilbazole ‘rod’ protruding from the plane of the water surface. Such floating monolayers have been transferred on to solid substrates such as glass, aluminium (AI2O3/AI/Glass) and silicon (SiO2/Si) at relatively high speed (10 mm min -1) to form Y-type LB assemblies. The UV-Visible absorption properties of these materials in solution and LB film form have been studied. LB films of these complexes yield bathochromically shifted spectra relative to the LB film spectrum of the uncomplexed stilbazole. Additionally, these spectra are often broader and hypsochromically shifted relative to their corresponding solution spectra as a result of the close molecular packing within the LB film and the associated dipole-dipole interactions.The electrically polar nature of the molecules described in this paper suggest that they may be suitable candidates for new pyroelectric materials. Thus the pyroelectric coefficient (the rate of change of electric polarisation with respect to temperature) has been measured for a polar multilayer LB film containing an iridium complex. A pyroelectric coefficient of 3.5 μCm-2K-1 (at 30 °C) has been measured, which is one of the highest reported valued for an LB film. Additionally, a low dielectric loss of around 0.01 has been found over the frequency range 50 Hz-1 kHz, indicating that such LB films may be usfeul materials for pyroelectric sensors.
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    Advanced Materials for Optics and Electronics 4 (1994) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
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    Advanced Materials for Optics and Electronics 1 (1992), S. 25-28 
    ISSN: 1057-9257
    Keywords: Cathodoluminescence ; Cadmium sulphide ; Dislocation structure ; Wavelength imaging ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: By means of the unique technique of cathodoluminescence wavelength imaging we analyse the distribution and nature of dislocations in strain-distorted CdS by scanning the spatial pattern of a set of lines due to excitons bound to dislocation-related defects. The method is demonstrated to be most powerful for the study of dislocations in II-VI and other materials which play a crucial role in hetero-epistructures.
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    Advanced Materials for Optics and Electronics 1 (1992) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 1 (1992), S. 37-42 
    ISSN: 1057-9257
    Keywords: Liquid crystal ; Silver complex ; Mesomorphic ; Stilbazole ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of AgX (X = NO3 or CF3SO3) with two equivalents of 4-alkyloxystilbazole leads to the mesomorphic silver(I) complexes [Ag(n-OPhVPy)2] [X] in high yield. The long-chain homologues of each series show SA and SC mesophases, while for shorter chain lengths the nitrate salts show only an SA phase and the triflate salts only a nematic phase. The phase behaviour of these new complexes is discussed in relation to analogous complexes with different counter-anions or ligands.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 289-293 
    ISSN: 1057-9257
    Keywords: Lead phthalocyanine ; Optical properties ; Gas sensor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The optical transmittance and absorption of thin films of monoclinic lead phthalocyanine have been studied as a function of exposure to chlorine and air. The effect of chlorine on the refractive index and dielectric constant of freshly prepared films was estimated from reflectivity data in the photon energy range 2.1-2.6 eV. Responsivity and recovery from gaseous exposure were studied with regard to the applicability of lead phthalocyanine to the fabrication of an optical chlorine sensor.
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    Advanced Materials for Optics and Electronics 2 (1993) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 2 (1993), S. 3-17 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The pyrolytic LCVD of high-purity gold tracks from the organogold(I) complex MeAuPMe3 is reported. The tracks were deposited onto (100) n-type single-crystal silicon with a thermally grown oxide layer (3000 Å), single-crystal GaAs with an intact native oxide layer and polycrystalline diamond films upon (100) silicon using the output from an argon ion laser (Coherent Innova 100-10) at 514.5 nm. Deposits were grown at a range of scan speeds from 0 to 200 μm s-1 and characterised by SEM, SIMS, LIMA and scanning profilometry. Electrical resistivities as low as 7.04 μΩ cm, within a factor of three of that of bulk gold, were achieved at scan speeds below 156.3 μm s-1. These are consistent with deposit purities of better than 99% (LIMA) without the need for a post-deposition annealing step.The relationship between power density, beam residence time and deposition rate was measured. The morphology of the deposit from the onset of detectable nucleation through to the formation of continuous tracks was analysed by SEM micrographs of deposits grown at successively increasing power densities. The nucleation process was found to be substrate-dependent. Changes in deposit morphology with power density and scan speed were observed. These include periodicity in track width and at high power densities the development of ‘volcano’-shaped profiles.The formation of a phosphorus-based interfacial layer, exclusive to laser deposition upon GaAs, is evidence for a reaction between the PMe3 and GaAs.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 63-70 
    ISSN: 1057-9257
    Keywords: Particulate ; Contamination ; Laser-induced removal ; Particle removal ; Laser cleaning ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Pulsed-laser-induced removal of particles from surfaces is a new cleaning technique. This laser cleaning can be performed on dry surfaces as well as on wet surfaces with a micron-thick liquid film during pulsed laser irradiation to provide enhanced removal efficiency. Using the latter technique, to be called ‘steam laser cleaning’ here, we are able to remove epoxy, alumina, silicon or gold particles with diameters in the range 0.1-10 μm from silicon and other surfaces.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 87-92 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The machining of several materials such as polymers, metals and ceramics using excimer lasers (193, 248 and 308 nm) was investigated. By photoablation, micrometer resolution can be achieved for polymers if the wavelength and fluence are chosen properly. High-definition processing of metals is complicated by the occurrence of surface melting. An interaction between the ablation plume and the walls of the laser-drilled holes leads to hole widening in the case of polymers at high fluences. For small structures (〈100 μm) all materials investigated show a size-dependent ablation rate. This effect has to be taken into account if a precise ablation depth is required for a pattern with structures of different sizes.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 1-1 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 3 (1994), S. 171-175 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A series of new compounds [RME2CNR′2]2 (R and R′ are various alkyl groups, e.g. M ≡ Zn or Cd, R ≡ Me, R′ ≡ Et) have been synthesised and characterised. The compounds can be used as single molecular precursors for the deposition of the corresponding binary chalcogenides. In the present paper the range of compounds synthesised and their uses are reviewed. Preliminary observations on the deposition of thin films on glass and GaAs(100) substrates are reported.
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    Advanced Materials for Optics and Electronics 3 (1994), S. 177-182 
    ISSN: 1057-9257
    Keywords: RTA ; Mercury Cadmium ; Telluride ; Hall characterization ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper reports the change in the bulk transport properties of p-type MCT samples induced by a rapid thermal annealing (RTA) process. This change is produced homogeneously within the crystal without interchange of mercury with the surrounding atmosphere. The carrier concentration varies towards an equilibrium value that depends only on the annealing temperature. For the material and temperatures investigated (250-420°C) the equilibrium carrier concentration depends exponentially on the inverse of the temperature, its value ranges between 1 × 1017 and 4 × 1017 cm-3. The time needed to reach equilibrium is a function of the temperature, varying from 10 s at 420°C to 200 s at 250°C. The hole mobility is also affected by the RTA process, its evolution being a function of the process temperature and time. A model is proposed to explain these modifications based on a reaction of generation-annhilitation of mercury vacancies and interstitials that would take place within the crystal with no external interaction.
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    Advanced Materials for Optics and Electronics 1 (1992) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 1 (1992), S. 51-57 
    ISSN: 1057-9257
    Keywords: Copper ; Etching ; Excimer ; Laser ; Chlorine ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Low-fluence XeCl laser etching of copper foils in a chlorine environment has been studied. The etch rate is fluence-dependent in the range 0.05-1.0 J cm-2 and is governed by the growth characteristics of the chloride layer formed in the interpulse period. Projection etching with good pattern reproduction and resolution for high-aspect-ratio features is demonstrated.
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    Advanced Materials for Optics and Electronics 1 (1992), S. 73-80 
    ISSN: 1057-9257
    Keywords: Disorder formalism ; Hole transport ; p-diethylamino-benzaldehyde-diphenyl hydrazone ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hole mobilities have been measured in vapour-deposited films of p-diethylamino-benzaldehyde-diphenyl hydrazone (DEH). The results are described by a model based on hopping through a manifold of sites broadened by energetic and positional disorder. The application of the model leads to the conclusion that the width of the density of hopping states is influenced by dipolar disorder due to dipole moments of the DEH molecules. In comparing the results with those observed in other molecular solids, the degree of positional disorder is shown to be relatively small.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 197-204 
    ISSN: 1057-9257
    Keywords: Organic ; LEDS ; Electroluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The electroluminescent behaviour of films of poly(phenylphenylenevinylene) (PPPV), of PPPV blended with polystyrene (PS) and of PS doped with oligo(phenylenevinylene) sandwiched between indium-tin oxide (ITO) and Al contacts has been investigated. Polymer blending increases the relative quantum efficiency by up to two orders of magnitude. Studying the cell performance under application of rectangular voltage pulses as a function of temperature indicates that (i) hole injection at the ITO contact occurs by tunnelling, (ii) tunnel injection of electrons at the cathode is promoted by a space charge field across an interfacial Al2O3 layers and (iii) leakage of holes through the cathodic barrier is the main loss mechanism for holes.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 211-220 
    ISSN: 1057-9257
    Keywords: Optical signals ; Electrical signals ; Bacteriorhodopsin ; Langmuir-Blodgett films ; Proton kinetics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The decay of the M intermediate and the recovery kinetics of bacteriorhodopsin (bR) were detected optically in dry and wet bR Langmuir-Blodgett (LB) films and electrically in dry films. From the electrical signals the kinetics of the proton motion was distinguished from the cell function and it was found to be equal to that determined optically for the M intermediate decay. The rate-determining step for the recovery rate of bR was found to be the M state.
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    Advanced Materials for Optics and Electronics 2 (1993) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 2 (1993), S. 271-288 
    ISSN: 1057-9257
    Keywords: Superconducting metal oxides ; Precursors ; Copper ; Barium ; Calcium ; Strontium ; Yttrium ; β-Diketonates ; Alkoxides ; Amides ; Carboxylates ; Halides ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The advent of high-temperature superconducting metal oxides (SMOs) has prompted an increasing number of studies aimed at the development of new routes to their syntheses, in particular in the form of thin films. The preferred method in this regard has been that of chemical vapour deposition (CVD); however, significant difficulties have been associated with the efficacy of commercial precursors for the group 2 metals, in particular those of the bis(β-diketonates) of barium, whose co-ordinative unsaturation leads to cluster formation. The development of alternative β-diketonate precursor systems has focused upon the synthesis of stable Lewis acid-base complexes by either inter- or intramolecular stabilisation. The results of these studies are described herein, along with a review of the research to date on non-β-diketonate derivatives of the group 2 metals, including organometallic, halide, amide, carboxylate and alkoxide compounds. On the basis of the results to date, a series of goals for the synthesis of the ideal precursor are discussed.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 1-1 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 2 (1993), S. 19-29 
    ISSN: 1057-9257
    Keywords: Thin films ; Laser ablation ; X-ray mirrors ; Plasma sources ; UHV deposition equipment ; Ni/C multilayer structures ; SNMS depth profiling ; TEM cross-section ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.First applications of the equipment are explained and compared with typical results of the conventional technique.
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    Advanced Materials for Optics and Electronics 2 (1993), S. 71-77 
    ISSN: 1057-9257
    Keywords: Scanning tunnelling microscope (STM) ; Tip ; HOPG ; Nanofabrication ; In situ processing ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The STM tip shape was found to change when nanofabrication using a scanning tunnelling microscope (STM) was attempted by applying voltage pulses between the tip and the sample. This change, which is considered to be caused by the voltage pulses, was studied systematically to investigate the thermal contribution to nanofabrication using STM tips. The tips become easily damaged as the pulse amplitude and pulse width increase or the tunnelling gap decreases. Thermal reaction, including thermochemical reaction, is considered to play an important role in such nanofabrication.
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  • 87
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    Advanced Materials for Optics and Electronics 3 (1994) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 88
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    Advanced Materials for Optics and Electronics 3 (1994), S. 3-9 
    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; Raman spectroscopy ; In situ characterisation ; II-VI/III-V ; CdTe ; CdS ; III2VI3 ; Interface ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper describes ways in which the interface between II-VI and III-V semiconductors can be controlled so as to suppress or alter commonly observed interfacial reactions. This will be done using CdTe/InSb and CdS/InP heterostructures as examples. In the case of CdTe/InSb a modification of the interfacial properties is achieved by a variation in the II/VI ratio offered to the surface during growth, while the influence of Sb interlayers is studied for CdS on InP. Information on the interface properties is obtained from Raman spectroscopy. While structural and electronic properties of the II-VI layer can be deduced from the scattering intensities of its characteristic vibrational modes, the formation of interfacial compounds is observed by the appearance of scattering intensity in a different spectral range, which is consistent with the formation of III2VI3 compounds. The potential of Raman spectroscopy for on-line in situ monitoring of growth processes will be displayed.
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  • 89
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    Advanced Materials for Optics and Electronics 3 (1994), S. 73-80 
    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSxSe1 - x ; MQW ; Optical properties ; Lasing Exciton ; Electron-hole plasma ; Dynamics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Non-linear and stimulated emission of ZnSxSe1 - x/ZnSe multilayer structures grown by MOVPE on GaAs is investigated by means of high-density excitation spectroscopy using a high-resolution pulsed excimer-dye laser system as well as a picosecond titanium-sapphire laser for time-resolved measurements. Heterostructures with ZnSe layers or single and multiple quantum wells were grown in which the ZnSe layer widths were varied between 1 nm (strong quantum confinement) and 500 nm (quasi-bulk situation). The sulphur concentration in the ZnSxSe1 - x buffer, barrier and cap layers was chosen between x = 0.045 and x = 0.74 in order to find the most promising compromise with regard to maximum band offset to ZnSe for most efficient carrier confinement and suitable waveguiding properties depending on variation in the refractive index, and to highest structural quality of the actively emitting ZnSe layers. Stimulated emission is found to occur in all samples, being brightest in the sample with the lowest sulphur concentration in the cap and barrier layers. Its dynamical properties point to a probable interpretation in terms of electron-hole plasma creation, which, however, may not be the basic process in narrow-quantum wells or strongly structurally disturbed samples.
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  • 90
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    Advanced Materials for Optics and Electronics 3 (1994), S. 103-109 
    ISSN: 1057-9257
    Keywords: Laser emission ; II-VI semiconductors ; Many particle effects ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a brief historical remark about the evolution of scientific interest in wide gap II-VI compounds, we review the various laser processes which have been identified in bulk materials and thin layers during the last 25 years. We then proceed to quantum wells and superlattices and stress the differences from III-V compounds. We finish by considering the exploitation of specific properties of widegap II-VI compounds for light-emitting and laser diodes.
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  • 91
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    Advanced Materials for Optics and Electronics 3 (1994), S. 117-125 
    ISSN: 1057-9257
    Keywords: Exciton-magnetic polaron ; Quantum well ; Dilute magnetic semiconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Calculations of the energies of magnetic polarons formed by free excitons localised in non-magnetic CdTe wells next to magnetic Cd1 - xMnxTe barriers are presented. A comparison with recent time-resolved spectroscopy results allows insight to the physical aspects governing the dynamics of the formation of the polarons. It is shown that the experimentally measured energy shift is not the polaron energy itself but the difference between this and the change in the exciton binding energy. The latter is calculated within the envelope function approximation and by employing a variational technique. The polaron energy calculation uses a modified version of an approach described by Wolff.The results show that static polaron calculations are not generally reliable and that the exciton-magnetic polaron has to be viewed as a dynamically evolving complex. It is initially energetically favourable for the exciton-magnetic polaron complex to increase its spatial localisation, since the gains in polarisation energy exceed the loss in exciton binding energy. However, thermodynamic considerations suggest that in general saturation of the magnetic ions will not occur.
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  • 92
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    Advanced Materials for Optics and Electronics 3 (1994), S. 127-130 
    ISSN: 1057-9257
    Keywords: Tunneling ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental investigations of tunnelling conductivity oscillations of metal-insulator-gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low-bias maxima decrease monotonously, and at H ⊥ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.
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  • 93
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    Advanced Materials for Optics and Electronics 3 (1994), S. 141-150 
    ISSN: 1057-9257
    Keywords: Semiconductor-doped glasses ; Non-linear optical materials ; Differential absorption spectroscopy ; Scattering processes ; II-VI compounds ; Quantum dots ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: By use of differential absorption spectroscopy at different temperatures we investigate the homogeneous line broadening of small CdSxSe1 - x quantum dots embedded in glass. Our experiments show the strong correlation between the precipitation stages and characteristics optical parameters such as the saturation intensity and the longitudinal and transverse relaxation times. In samples grown in the diffusion-controlled regime to avoid coalescence, we find after strong laser excitation for the first time spectrally narrow holes in the non-linear differential absorption spectra. These sharp non-linear resonances with a halfwidth Γ of only 10 meV at T = 20 K allow us to investigate the energetic distance of the lowest hole levels and the temperature dependence of the line broadening. The different contributions of LO phonon coupling and temperature-independent scattering to the homogeneous linewidth will be analysed. The relaxation from the excited hole states has been investigated by exciting in the higher-energy hole states and measuring the resulting change in the ground state absorption.
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  • 94
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    Advanced Materials for Optics and Electronics 3 (1994), S. 183-190 
    ISSN: 1057-9257
    Keywords: Scanning transmission electron microscopy (STEM) ; High-resolution ; Z-contrast ; ADF ; HAADF ; Electron energy loss spectroscopy (EELS) ; ZnSxSe1 - x/ZnSe quantum wells ; MOVPE ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial growth techniques for ZnSxSe1 - x/ZnSe heterostructures have already achieved a high degree of development. Further improvements strongly require characterisation techniques with high compositional sensitivity and high spatial resolution. Therefore in this work high-resolution Z-contrast, which provides compositional information down to the atomic scale, has been used for the first time to characterise ZnSxSe1 - x/ZnSe quantum well structures. The influence of structural defects on Z-contrast is demonstrated by comparison of scanning transmission electron microscopy (STEM) bright field images and STEM Z-contrast micrographs of planar defects and dislocations. The compositional abruptness of ZnSxSe1 - x/ZnSe interfaces in MOVPE-grown quantum well (QW) structures is judged from high-resolution Z-contrast micrographs. Electron energy loss spectroscopy (EELS) measurements were performed for the first time in ZnSxSe1 - x/ZnSe QW structures in order to obtain quantitative compositional information with nanometre spatial resolution. From EELS line scans, which monitor the selenium concentration across ZnSe QWs, the obtainable spatial resolution is estimated to be about 1-2 nm. The problems that have prevented quantitative analysis of the selenium concentration up to now are discussed.
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  • 95
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    Advanced Materials for Optics and Electronics 3 (1994), S. 203-208 
    ISSN: 1057-9257
    Keywords: ZnSe ; Diallylselende ; Plasma ; MOVPE ; Nitrogen doping ; Raman spectroscopy ; Photoluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In order to obtain high quality Znse epilayers on GaAs which can be intentionally P- and n-type doped growth at a reduced temperature is highly desirable. Therefore in this work the suitability of diallylselenide and the influrnce of plasma precracking have ben investigated. Photoluminesscence, Raman spectroscopy, scanning electron microscopy, X-ray, SIMS and Hall measurements were used to anaylse the samples. The selenium precursor was fully decomposed at temperatures above 360°C if it was precracked by a plasma. Bound excitions could be resolved with negligible donor-acceptor pair (DAP) and copper green emission in the PL spectra form films which were grown with a plasma at temperatures beyond 530°C. Clearly the hpe for reduction in the deposition temperature was not achieved. Raman spectra also revealed strong crystalline quality variations. For the doping experiments nitrogen was used as the carrier gasa instead of hydrogen. Plasma cracking of the selenium precursor was still necessary. Thye substitution of the H2 carrier gas by nitrogen reduced the growth rate by a factor of 2.6 but enhanced the crystalline properties of the samples as shown by the Raman measurements. Strong DAP emission at 2.7eV in the (PL) spectra was observed. SIMS measurements showed a nitrogend concertration of about 3 × 1017 cm-3. An additional nirtogen plasama (0-7W) had a begligible effect on the nitrogen concentration in the sample. The samples were semi-insulating, whichmight be a conswquence of the crystalline quality of ZnSe grown with DASe as selenium precursor.
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  • 96
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    Advanced Materials for Optics and Electronics 3 (1994), S. 239-245 
    ISSN: 1057-9257
    Keywords: Substrates ; MOVPE ; MCT ; Surface morphology ; Structural properties ; Photoconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal procesing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (h11) GaAs substrate orientation and polarity on the structrual properties and surface morphology of CdTe layers grown by MOVPE has ben carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as ezplained by a model taking into accountthe type of dangling bonds at the interface. The performance of photoconductors fabricated on(Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (311)B orientation.
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  • 97
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    Advanced Materials for Optics and Electronics 3 (1994), S. 261-267 
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSxSe1 - x ; MOVPE ; Photoluminescence ; Mapping ; Purified ; DESe source ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we report new results concerning the cause of impurities responsible for the Ix, and I2-peaks in photoluminescence (PL) spectra of ZnSe grown by MOVPE. An improvement in ZnSe epilayer quality is obtained by using a metal organic selenium precursor with reduced chlorine concentration. The PL spectrum of such a layer shows typical excitonic transitions, but compared with samples grown with a more contaminated source, the intensity of the Ix, and the I2 peaks decreases relative to the free exciton transition. A Gaussian fitting of the donor-bound exciton peaks taking the background of other structures into account shows that the ratio between the Ix and I2 peaks does not differ significantly between two samples. Both the decrease in donor-bound exciton transitions and the unchangeability of the ratio Ix/I2lead to the conclusion that only chlorine impurities are responsible for Ixand Ix. In order to verify the homogeneity of impurity uptake across a 2 inch wafer, we performed PL mapping of ZnSxSe1 - x layers. Mapping of a 2 inch ZnSe wafer shows that the FWHM of Ix across a wafer does not vary significantly (1.55 ± 0.21 meV). On mapping a 2 inch ZnS0.3Se0.7 wafer fabricated with H2S as the sulphur source at TD = 480°C, we found a rotational symmetric dstribution of sulphur in the layer. The sulphur content x at the centre is nearly constant. The difference in x between the centre and the boundary of a bad surface region at the edge of the wafer is less than Δx = 0.045. The FWHM of the band edge luminescence follows the same tendency across the wafer. The dependence of homogeneity on the reactor design as well as the uptake of unintentional impurities from the precursor is discussed in detail.
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  • 98
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    Advanced Materials for Optics and Electronics 3 (1994), S. 283-288 
    ISSN: 1057-9257
    Keywords: Phosphors ; Alkaline ; Earth sulphides ; Photoluminescence ; CaS ; SrS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Ca1 - xSrxS Solid Solutions at 10 m/o intervals have been prepared by coprecipitation of sulphates from aqueous solution followed by reduction at 1000°C with hydrogen. Phosphorescence emission spectra have been determined for these solid solutions doped with 0.1 m/o cerium and show a blue shift with increasing strontium content from 2.46 to 2.59 eV. Hyperbolic phosphorescent decay curves were observed at both room and liquid nitrogen temperatures across the composition range and have been broken down into three exponential components by graphical and computer-programme-based methods. At room temperature trap depth values of 0.366, 0.316 and 0.282 eV with measured lifetimes of 1.9, 0.26 and 0.07 ms respectively were determined with little dependence on composition. At liquid nitrogen temperature shallower traps were observed at 0.103, 0.086 and 0.076 eV with respective decay times of 5, 0.4 and 0.09 ms having little sensitivity to changes in the host compostion. These traps are related to intrinsic defects, some of which may be surface in character. The blue shift in emission peak energy with the decrease in band gap from CaS to SrS is discussed.
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  • 99
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    Advanced Materials for Optics and Electronics 1 (1992), S. 179-188 
    ISSN: 1057-9257
    Keywords: Luminescence ; Molecularly doped polymers ; Delayed luminescence ; Geminate pair recombination ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Decay of the delayed luminescence of 1,1-bis(di-4-tolylaminophenyl)cyclohexane, both doped into a polycarbonate binder and matrix-isolated in an MTHF glass, has been studied upon excitation with the 308 nm line of an excimer laser. Time-resolved emission spectra have also been recorded. In the early time regime, 30 ns 〈 t 〈 10 μs, the decay of the emission, identified as delayed fluorescence rather than phosphorescence, follows a power-law characteristic of geminate pair recombination in a disordered medium. Singlet-singlet excitation fusion is considered to be the main pathway for geminate pair formation. Fusion of triplet excitations becomes important for e-h pair formation at long times only (10 μs 〈 t 〈 10 ms). The rate of triplet-triplet encounters carries a time dependence characteristic of the random walk of excitations in a disordered solid.
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  • 100
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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