Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 2045-2047
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We observe that 266 nm laser pulses of 30 ps duration and fluence near 10 J/cm2 causes reproducible surface sputtering and etching of crystalline sapphire in air. The etching rate for the initial ten pulses is relatively slow, 0.04 μm/pulse, producing a smooth surface of the etched area and a broad-angle plume emission. After some 20 pulses, the etching rate is dramatically faster, 0.5 μm/pulse, producing a rough etched surface and a plume composed of broad-angle emission as well as a narrow perpendicular jet emission. Micron-sized depressions can be made on the sapphire with no visible damage or cracking to the surroundings.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102100
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