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  • Articles  (434)
  • Wiley-Blackwell  (434)
  • 1990-1994  (376)
  • 1985-1989  (58)
  • 1960-1964
  • 1950-1954
  • Electrical Engineering, Measurement and Control Technology  (434)
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  • Articles  (434)
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  • 1990-1994  (376)
  • 1985-1989  (58)
  • 1960-1964
  • 1950-1954
  • 1995-1999  (367)
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  • 1
    Electronic Resource
    Electronic Resource
    Adnan Saleh (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. i 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070108
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  • 2
    Electronic Resource
    Electronic Resource
    Editorial (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 75-75 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070202
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of the general rectangular 2D-TLM network (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 127-139 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this paper the traditional square mesh 2D-TLM algorithm is generalized for rectangular meshes of arbitrary aspect ratio. It is shown that the anisotropic rectangular TLM network can be conceived in such a way that the propagation vector remains independent of the direction of propagation in the infinitesimal approximation. A full dispersion analysis of the rectangular mesh in then performed for the general case, and results are compared to that of the traditional square mesh.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070206
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  • 4
    Electronic Resource
    Electronic Resource
    Integral equation formulation of radiation from rectangular waveguides and horns (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 155-166 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The radiation field patterns of rectangular waveguides and horns of finite dimensions are obtained numerically. The electric field integral equation is formulated to relate their radiation patterns to the surface current distribution. These currents are determined numerically by reducing the integral equation to a matrix equation, using the moment method. The computed currents are then used to calculate the radiation patterns and cross-polar fields of the finite wavegiudes and horns. The method is numerically efficient and can be applied to the computation and optimization of the antenna feed configurations.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070303
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  • 5
    Electronic Resource
    Electronic Resource
    The modelling and the electromagnetic scattering from bifurcated open-ended cavities (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 167-177 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Ray-besed methods have been previously developed for accurately predicting the electromagnetic scattering from cavity interiors that allowed for realistic modelling of complex cavities such as jet engine inlets. An analytic geometric model is developed for bifurcated cavities based on connecting sections of generalized super-ellipse functions. The electromagnetic scattering from such cavities using the ‘shooting and bouncing rays’ (SBR) method is discussed.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070304
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  • 6
    Electronic Resource
    Electronic Resource
    FDTD analysis of crosstalk in multilayer printed circuits (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 209-221 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A theoretical analysis has been developed to study the crosstalk in crossed bundles of parallel lines. The model is based on the theory of the coupled transmission lines and the resulting system of differential equations has been solved by means of the finite difference, time-domain (FDTD) method. The frequency response of the network has been achieved by the discrete fourier transform (DFT) algorithm; measurements, performed with a vectorial network analyser, show a good agreement with numerical simulation.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070308
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  • 7
    Electronic Resource
    Electronic Resource
    3-D edge element analysis of dielectric loaded resonant cavities (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 35-41 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The eigenmodes in electromagnetic cavities, loaded with arbitrarily shaped dielectric materials, are computed by the edge element method. The computation shows that the well known ‘spurious modes’ no longer appear. Formulae are given and verified so that the number of zero eigenvalues, which come from ∇ × H = 0, may be accurately predicted. Formulae for the order and density of the global matrices are given for a rectangular cavity regularly divided into bricks and tetrahedra, allowing an associated comparison between the contrasting edge and nodal element formulations. Comparison of the computed results with available theoretical and previously published data show the edge element approach to be a robust, accurate and effective method.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070105
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  • 8
    Electronic Resource
    Electronic Resource
    Harmonic balance method applied to the numerical electrical physical modelling of two-terminal, non-linear microwave circuits in the frequency domain (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 253-265 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A numerical frequence-domain modelling of two-terminal, non-linear microwave circuits is presented. It basically relies on a process allowing the solution of the frequency-domain curcuit harmonic balance equations while accounting for the semiconductor device by means of an accurate numerical macroscopic physical model. In its present state of development, the model allows the study of a single two-terminal device circuit operating in harmonic mode. Its capabilites are illustrated by means of the results of a study devoted to the optimization of the load curcuit configuration of a millimetre-wave avalanche diode frequency multiplier. The influence of the output load impedance level on the circuit output RF performance has been investigated for different input power levels in direct frequency multiplication mode and in the presence of additional circuit tunings at low harmonic rank idler frequencies.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070404
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  • 9
    Electronic Resource
    Electronic Resource
    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070501
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  • 10
    Electronic Resource
    Electronic Resource
    A non-linear and distributed modelling procedure of fets (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 309-319 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a rigorous and systematic procedure to derive a non-linear distributed FET model that an easily be implemented in CAD routines of simulators based on harmonic balance techniques. The new model is derived from a knowldge of the conventional linear lumped equivalent circuit, from non-linear current sources extracted with pulsed measurements, and from the physical dimensions of the FET.For fundamental and haromonic requencies, the FET is modelled by N identical cells. Each cell is made up of a non-linear two-port section inserted between two linear four-port sections that simulate the coupling and the distributed effects along the electrodes of the FET in the width direction only. This non-linear distributed scaling approach to FET modelling has been applied to the analysis of a submicrometre-gate GaAs FET at Millimetre-wave frequencies, and the results were compared to the non-linear lumped element approach. This approach can be applied to other transistors used in non-linear regions at microwave and millimetre-wave frequencies.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070502
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  • 11
    Electronic Resource
    Electronic Resource
    Calls for papers (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 375-375 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070508
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  • 12
    Electronic Resource
    Electronic Resource
    Erratum (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. ii 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070602
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  • 13
    Electronic Resource
    Electronic Resource
    Symbolic approach to inverse problems in method of moments (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 399-405 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Symbolic computational systems introduce some unique features in computational engineering. There have been several papers published on the solution of differential equations under given boundary conditions by symbolic systems. The finite element formalism has received prime attention in the course of development of symbolic computation in engineering. The main idea has been to develop a symbolic FEM package to reduce the burden of manual algebra, eliminate errors introduced by numerical quadrature, and improve the efficiency of element generation.This work discusses a symbolic solution to electromagnetic linear antenna problems. The solution is a method of moments that transforms Pocklington's integral equation to a matrix equation. The symbolic system is used to produce (1) analytical integration, (2) the parametric expression for the input impedance and (3) computational code for forward and reverse problem of the input impedance.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070604
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  • 14
    Electronic Resource
    Electronic Resource
    A Laplace domain finite element method (LDFEM) applied to diffusion and propagation problems in electrical engineering (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 419-432 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a new finite element formulation in the Laplace domain for both diffusion and wave equations with applications in the field of electrical engineering. With the aid of congruence transformation of matrices, the finite element equations in the Laplace domain are solved and time-domain results can be obtained through the inverse Laplace transform. In a test problem, good agreement between the numerical results derived with the present method and the analytical solutions has been found. For applications in which only Dirichlet and Neumann boundary conditions are involved, this new finite element approach can be applied and provide both frequency-domain and time-domain results in one run without any timestepping scheme. The limitations of using the congruence transformation in solving propagation problems are also addressed in this paper.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070606
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  • 15
    Electronic Resource
    Electronic Resource
    Numerical analysis of discontinuities in a rectangular waveguide loaded with isotropic or anisotropic obstacles by means of the coupled-mode method and the mode-matching method (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 433-452 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A hybrid method obtained as a combination of the coupled-mode method (CMM) and the mode-matching method (MMM) is developed and applied in the analysis of multiple dielectric and magnetic discontinuities in rectangular waveguides. As both are moment methods, some kind of truncation has to be carried out in the computer implementation. It is shown that selection of a different number of modes in the two methods is not necessary, unless low-permittivity meida inside the waveguide are considered. As a consequence, the procedure for slecting the number of basis functions is only done in one of the methods. Numerical examples are presented showing the behaviour of the method and the proofs of convergence. Examples are included illustrating the power of this hybrid technique, especially in relation to non-reciprocal structures containing magnetized ferrites.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070607
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  • 16
    Electronic Resource
    Electronic Resource
    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070101
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  • 17
    Electronic Resource
    Electronic Resource
    Numerical modelling of viscous flow in silicon thermal oxidation with the boundary element method (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 15-24 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the application of the boundary element method to solving two-dimensional steady slow viscous flow problems (creeping flow) in thermal silicon oxidation. The proposed method used the velocity-pressure formulation. The use of the incompressibility condition as a boundary condition and the application of the second Green's identity to transform the domain integral into a boundary integral result in a system of three boundary integral equations for velocity components and pressure. Solution of this system to be an ill-posed problem because of the presence of boundary conditions of the first kind. Two methods of regularization are employed. The numerical results for trench oxidation process are presented.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070103
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  • 18
    Electronic Resource
    Electronic Resource
    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070201
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  • 19
    Electronic Resource
    Electronic Resource
    Numerical modelling of the stationary Maxwell-Lorentz system in technical devices (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 43-67 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The particle-in-cell method is coupled with boundary-fitted co-ordinates in order to model the stationary Maxwell-Lorentz problem in technical devices. New numerical algorithms describing the transition between the grid model and the mesh-free model are developed and the existing techniques of finite difference schemes for equidistant grids are extended to non-equidistant, arbitrarily shaped, convex four-point meshes. The modelling process is described, and both the numerical approximation and the algorithms are discussed. Applications in different technical devices show the flexibility of the method.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070106
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  • 20
    Electronic Resource
    Electronic Resource
    Function expansion algorithms for the time-domain alalysis of shielded structures supporting electromagnetic waves (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 77-84 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Series function expansion algorithms of the time-domain analysis of boundary value problems are discussed. Electromagnetic fields inside a structure under investigation are expanded into series of basis functions and the expansion coefficients are found by means of the Galerkin method. The numerical cost of algorithms is discussed and a cost efficient approach is proposed for formulations using sine and cosine expansion functions. Compared with conventional time-domain methods the algorithms described show the time evolution of the expansion coefficients rather than the samples of a physical continuum at discrete nodes.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070203
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  • 21
    Electronic Resource
    Electronic Resource
    Editorial (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. ii 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070302
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  • 22
    Electronic Resource
    Electronic Resource
    Analysis of a thin wire circular loop antenna (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 189-199 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A rigorous technique for studying a thin wire circular loop antenna excited by a magnetic frill is developed. The exact kernel is derived and used to improve the accuracy. The scheme is applicable to small as well as large loops. Results obtained are nearly indistinguishable from those determined by the Fourier expansion method for non-resonant loops. A disagreement of 2 per cent is generally observed when the loop is close to reasonant for βb 〉 2. Compared with the conventional numerical method where a loop is represented by a polygon of straight wires, the present scheme is much faster and more accurate. Extension of this method to cover an antenna system of arbitrarily oriented loops intermingled with straight wires can be easily achieved.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070306
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  • 23
    Electronic Resource
    Electronic Resource
    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070401
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  • 24
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    Numerical simulation of two-valley semiconductor device model based on an ENO shock capturing algorithm (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 239-252 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Simulation results for a n+-n-n+ two-valley semiconductor device obtained by use of a shock capturing numerical agorithm are presented. The one-dimensional problem is modelled by two systems of Euler equations connected by their source terms, and the Poisson equation. The resulting system of seven equations is hyperbolic and non-linear, and it is a great problem to find an adequate numerical approximation of its time-dependent discontinuities. There are additional complications due to the stiffness of the source terms.The numerical method used in this paper is first-order acurate in time but of high spatial order in regions of smoothness. Before the method is applied, the system has to be transformed to a characteristic form. The adopted shock capturing algorithm enables the choice of the order of the accuracy by the appropriate choice of the reconstruction polynomial. Reconstructions of the second and fourth order are tested and some numerical results are presented. Because of the stiffness of the source terms, the sixth-order accurate scheme breaks down. The results presented, and especially the response obtained of the structure to the step and periodic applied voltage, prove the correctness of the used schemes.
    Additional Material: 10 Ill.
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    URL: http://dx.doi.org/10.1002/jnm.1660070403
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  • 25
    Electronic Resource
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    On the responses of strip-line interconnects with discontinuities excited by external fields (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 283-304 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: An algorithm is developed to evaluate the responses of discontinuous coplanar strip-lines excited by external electromagnetic fields. The algorithm uses the cascade chain matrix method which employs the distributed circuit parameters to model the external field coupling to the line and it is applicable to most commonly encountered discontinuities in microwave integrated circuit interconnects on lossy substrates. A general CAD program is developed based on this model and it is applied to realistic coplanar strip-line interconnections with geometric and resistive discontinuities to illustrate the capabilities of the algorithm. These interconnect models are selected from a practical microwave integrated circuit design. Simplicity and fast speed of the algorithm enable computer-aided analysis of externally induced electromagnetic noise in integrated circuits to be carried out. The effects of dielectric losses in the integrated circuit substrates and the discontinuities in the conducting tracks on the wave coupling are investigated in isolation.
    Additional Material: 16 Ill.
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    URL: http://dx.doi.org/10.1002/jnm.1660070406
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  • 26
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    Parallel computation of 3-D electromagnetic scattering using finite elements (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 329-342 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The finite element method (FEM) with local absorbing boundary conditions has been recently applied to compute electromagnetic scattering from large 3-D geometries. In this paper, we present details pertaining to code implementation and optimization. Various types of sparse matrix storage schemes are discussed and their performance is examined in terms of vectorization and net storage requirements. The system of linear equations is solved using a preconditioned biconjugate gradient (BCG) algorithm and a fairly detailed study of existing point and block preconditioners (diagonal and incomplete LU) is carried out. A modified ILU preconditioning scheme is also introducted which works better than the traditional version for our matrix systems. The parallelization of the iterative sparse solver and the matrix generation/assembly as implemented on the KSR1 multiprocessor is described and the interprocessor communication patterns are analysed in detail. Near-linear speed-up is obtained for both the iterative solver and the matrix generation/assembly phases. Results are presented for a problem having 224,476 unknowns and validated by comparison with measured data.
    Additional Material: 7 Ill.
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    URL: http://dx.doi.org/10.1002/jnm.1660070504
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  • 27
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    Comments on, ‘numerical analysis of waveguide apertures radiating into lossy media’ (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 371-372 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Additional Material: 1 Tab.
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    Iterative solution of boundary element approximations for electric and magnetic fields (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 357-370 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The calculation of potentials in homogeneous and isotropic media by the boundary element method has the advantage that a harmonic solution of Laplace's equation is obtained for given approximated boundary conditions. The technique leads to the solution of linear systems with full matrices of dimension 1000-10,000 for medium- and large-sized three-dimensional problems, An efficient solution procedure of the linear systems is required.While the iterative solution of the large and sparse linear systems arising from the finite difference or the finite element method is well documented, the systems resulting from the boundary element method are typically solved by direct methods. However, in many cases an iterative solver needs far fewer operations to achieve a sufficient accuracy. Importantly, there are many alternative methods, each of them well suited for different types of problem.Here, we provide an overview of state-of-the-art iterative solvers. We will discuss the particular methods that have been successfully applied to systems arising from field calculations in the high-voltage engineering by the boundary element method. The selection of appropriate methods is discussed. We demonstrate that iterative solutions can be much faster than direct solvers with regards to the number of operations. Furthermore, these solvers are optimally suited for today's supercomputers because they can be efficiently vectorized and parallelized.
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    URL: http://dx.doi.org/10.1002/jnm.1660070506
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    Discrete Green's functions and hybrid modelling of thermal and particle diffusion (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 407-418 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper provides details of a widely applicable technique of hybrid modelling of thermal and particle diffusion which can help to reduce computational load in explicit formulation. The undesirable effects of artificial boundaries, which are introduced when a simulation is truncated or when an expanding mesh is used, can be eliminated by the use of discrete Green's functions. The technique can also be applied to problems involving infinite or near-infinite domains or problems where a complex thermal region is embedded within a larger, more simply described domain.
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    URL: http://dx.doi.org/10.1002/jnm.1660070605
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    Finite deffernce time-domain approximation of Maxwell's equations with non-orthogonal condensed TLM mesh (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 179-188 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A convex hexahedral TLM mesh of arbitrary shape is presented and the transmission-line matrix method extended to any non-orthogonal configuration. The novel mesh constitutes a natural generalization of Johns' condensed node. The associated TLM process is analysed and reconstructed as a genuine finite difference time-domain algorithm. Nodal S-parameters are derived from discretized Maxwell's equations and canonical stability criteria yield the TLM timestep. Unitarity is discussed and energy conservation confirmed in the non-conductive case.A given block-diagonal representation of the S-matrix restrains processing time per node and iteration within the range of traditional methods. The shortcomings of the rigid classical grid, as the need for inaccurate staircasing approximations, are, however, ruled out.Our analysis takes advantage of the recently developed propagator integral approach.
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    TLM treatments of changes of phase (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 201-207 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The existing treatment of an instantaneous endothermic change of state is extended to deal both with exothermic effects and with first order Arrhenius changes. These extended treatments are used to model complex changes of phase occurring during the firing of ball clay and china clay, both of which are constitutents of the slip used in the production of vitreous china ware. The adequacy of the treatments is investigated for both clays by comparing a TLM simulation of a DSC (differential scanning calorimetry) experiment with measurements made during the experiment.
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    T-versus ABCD-matrix in circuit analysis (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 321-328 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The paper describes and compares the wave-chain and transmission matrix approaches to the calculation of transfer-function coefficients for ladder circuits (semi-symbolic analysis). It is found that the wave-chain matrix approach can be computationally more efficient.
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    Finite element method solutions of field distributions in large cavities (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 343-355 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: To make possible the application of the three-dimensional finite element method to electrically large problems, it is combined with the analytical solutions of arbitrary large cavity with aperture. In this paper, detailed analysis for this hybrid method is presented. The element matrices necessary for coupling the finite element method to analytical solutions are given. The proposed hybrid method significantly reduces the number of unknown since only the inhomogeneity needs to be discretized. Thus computer memory and storage demands are reduced. In addition. This hybrid method employs the edge element which is not expected to produce spurious solutions. Also, the formulation presented in this paper preserves the sparsity of the finite element matrix, and does not require any matrix inversion. This new hybrid method is used to compute the field distributions in various partially filled rectangular enclosure. The results match well with the pure edgebased finite element method and analytical solutions.
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    Calculation of scattering parameters by orthogonal expansion and finite integration method (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 377-398 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Field computations by mathematical and numerical methods are presented in the time and frequency domain. The techniques used are discretization and modal expansion. The effects of modelling and frequency range on the accuracy and calculation requirements are investigated and discussed. By way of application, several results of RF-filter designs are presented, where these methods have been implemented in CAD programs.
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    Call for papers (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 453-453 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070608
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    A variational approach to boundary elements - two-dimensional Laplace problem (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 1-14 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Variational boundary element formulations are developed. Two functionals based on the dual and complementary energy approach are considered, which provide the upper and lower bound of the solution. Calculated examples of electrostatic fields are demonstrated for their field distributions and capacitances. Validity and the solution accuracy are discussed in comparison with the conventional boundary element solution.
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    New technique for finite difference analysis of optical waveguide problems (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 25-33 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The method of effective penetration depth is used to produce a novel scalar or polarized finite difference approach for the solution of optical rib waveguide field problems. The new method is quicker than previous finite difference approaches and requires less computer memory. Propagation constant values are presented for a range of semiconductor rib waveguides and are found to be indistinguishable from benchmark results produced using earlier methods of analysis. A simple polarization correction formula recently derived is confirmed by utilizing the good accuracy of these results. This enables discussion of the relationship between quasi-TE, quasi-TM and scalar modes, and a further substantial reduction of the cpu time.
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    The parallel computation of solutions to electrostatic problems using multigrid techniques (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 69-74 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The application of multigrid techniques to the computation of the static solutions of electromagnetic field problems governed by Laplace's equation is described. This technique is compared with the conventional successive over-relaxation (SOR) method for solving finite difference problems. In contrast to SOR, the number of iterations of multigrid needed to achieve convergence is largely independent of the grid size. It is shown that the relative performance of multigrid is excellent on large grids where the number of iterations of SOR needed to achieve convergence becomes prohibitively large. The technique is illustrated by applying a parallel implementation of multigrid to find a quasistatic solution of a boxed microstrip problem.
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    Solving eigenvalue and steady-state problems using time-domain models (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 85-97 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A new approach to efficiently compute the low-frequency eigenmodes of a time-domain model approximating a linear physical system is proposed. The method is based on principles known from digital signal processing, in particular from parametic spectrum estimation, so it is not surprising that the achievable accuracy is much higher than the accuracy of the usual non-parametric discrete Fourier transform approach. The algorithm works in the general lossy case even for a very large number of unknowns and can easily be extended to calculate steady-state solutions under sinusoidal excitations for several different frequencies simultaneously.
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    Recent developments in numerical integration of differential equations (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 99-125 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this paper we demonstrate the use of differential equations by means of an example from network analysis and show that differential/algebraic equations (DAE), rather than explicit ordinary differential equations (ODE), are more suitable for the description of electrical systems and networks. The main ideas of numerical integration of ODEs are presented. We consider this material from the point of view of replacing the ODE by a difference equation (DE). In particular, the relationship between the ODE and the associated DE is discussed. In the last Section the application of integration methods for OEDs upon DAEs and its difficulties are discussed. The paper is intended as a review; but a few new results are also included.
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    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070301
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    Two-dimensional FDTD and TLM (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 141-153 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Applying the method of moments to Maxwell's equations, Yee's two-dimensional FDTD scheme with central difference approximations and the two-dimensional TLM method are dervied from first principles of field theory. By comparing the eigenvalues of the two methods, the differences between two-dimensional FDTD and TLM are illustrated.
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    Transverse tranśmission theory for multilayer planar microwave circuits (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 225-238 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Transverse transmission concepts in the Fourier transmission domain for multilayer planar transmission medium are presented. This complete transverse transmission theory (TTT) is found to be a superset of different Fourier-transform-based numerical techniques widely used in guided wave analysis, namely the modematching method and the spectral-domain approach. The features of the theory are: the expansion of field quantities in longitudinal section (LSE/LSM) modes, the concept of rotation of the transverse field vectors, and a comprehnsive algorithm using recursive matrix standard form. It is shown that the mode-matching method and spectral-domain approach are generally equivalent except for the last step of imposing the final boundary conditions, and can therefore be summarized in a unified theory within the framework of TTT. In addition, a new parameter, the polarization coefficient, has been introduced to describe the field polarization of the guided wave in a quantitative manner. It is believed that the present theory will help us to gain more insight into hybrid mode propagation in multilayer planar circuits.
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    Numerical drift-diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 267-281 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the conventional electron current continuity equation into two components, with one for the Auger hot electrons and the other for the low-energy electrons. These equations, which use the energy relaxation time parameter to model the dynamics of the Auger hot electrons, are then coupled with the hole current continuity equation and the Poisson equation to obtain self-consistent solutions. Results from the case studies of one-dimensional N-p-P InGaAsP/InP double heterojunction laser diodes with material composition corresponding to 1·3 μm and 1·55 μm wavelength emissions are presented. We have observed that hot electrons generated through Auger recombination inside the active region can spread into both the N- and the P-InP cladding layers. Within the drift-diffusion framework, it is demonstrated that the hot electron concentration in the N-InP cladding layer can be five orders of magnitude higher than that in the P-InP cladding layer. Because energy transport of the hot electrons in not modelled under the drift-diffusion approximation, the simulated results are discussed to highlight some of the possible limitations in using drift-diffusion physics to study Auger hot electron transport behaviour. The importance of taking energy transport into account is emphasized.
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    Announcement (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994), S. 307-307 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070407
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    Masthead (1994)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 7 (1994) 
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    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jnm.1660070601
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040101
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    Encapsulated alkaline earth metallocenes. 3: Structural influences on phase transformations alkaline earth complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 1-8 
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    ISSN: 1057-9257
    Keywords: Alkaline earth ; Calcium ; Ligand flexibility ; Magnesium ; Melting point ; Metallocene ; Phase transformation ; Volatility ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of two equivalents of KCp3i (Cp3i ≡ 1,2,4-(i-Pr)3C5H2) with MgBr2 in Et2O produces the base-free metallocene (Cp3i)2Mg in high yield; the similarly prepared organocalcium complex (Cp3i)2Ca, although initally isolated as an oil, forms a crystalline solid on standing for several months. Crystals of (Cp3i)2 CA are tetragonal, space group P42/n, with a = 18.147(4), c = 15.996(4) Å, Å and Dcalc = 1.066 g cm-3 for Z = 8. Lease-squares refinement based on 2044 reflections led to a final R-value of 0.072. The complex possesses a metallocene geometry that is slightly bent; the average Ca-C distance is 2.62(2) Å and the right centroid-Ca-ring centroid angle is 169.7°. Comparison of these complexes with previously reported alkaline earth metallocenes suggests that the volatility of the metallocenses depends primarily on the degree of aggregation in the solid state, whereas the melting point of the nonomeric compounds varies with the asymmetry and ligan flexibility in the complex.
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    Langmuir-Blodgett films of indandione-l,3 pyridinium betaine. II: Molecular structure and properties of monolayers; simulation and optical absorption data (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 27-41 
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    ISSN: 1057-9257
    Keywords: Amphiphilic indandione-1,3 pyridinium betaine derivatives ; Langmuir-Blodgett monolayers ; Monolayer spectral characteristics ; Simulation of molecular structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The molecular structure and optical properties of a monolayer at the air/water interface of novel amphiphilic derivatives of indandione-1,3 pyridinium betaine (IPB) with different lengths of the aliphatic tail, namely C1lIPB and C17IPB, have been studied using optical absorption techniques and computer simulation approaches.The compression π-A isotherm of the C17IPB monolayer and computer simulation of its molecular structure show that there may exist two energetically stable molecular configurations, one with antiparallel orientation of the dipole moments of the C17IP ‘heads’ in the low-pressure region at π = 5-32 mN m-1 and the second (after a distinct phase transition at π = 33 mN m-1) with parallel orientation of the dipoles, with different tilt angles and areas per molecule. For C11IPB only the first structural phase is observable.The compression-induced changes in spectral characteristics of the two structural phases go in diametrically opposite directions. In the low-pressure phase compression induces a red shift and an increase in intensity of the S1 absorption band, while in the high pressure phase a blue shift and a decrease in the intensity of this band are observed. These spectral changes correlate reproducibly with the compression π-A isotherms. Measurements of absorption dichroism confirm the change in the tilt angle at the phase transition pressure. The compression-induced spectral changes have been substantiated by the results of quantum chemical calculations.
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    Electron beam and X-ray resists (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 139-153 
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    ISSN: 1057-9257
    Keywords: X-ray resists ; Electron beam ; Acrylate and methacrylate polymers ; Polysulphones ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The optimisation of the lithographic performance of negative-working electron beam resists is developed through consideration of the radiation chemistry of crosslinking of representative materials, typically epoxy-functionalised polymers and polystyrene and its derivatives. Similarly, the lithographic behaviour of positive-working systems based on radiation-induced chain scission reactions is discussed with reference to acrylate and methacrylate polymers and polysulphones. The difficulties encountered in devising desirable working systems based on novolacs are considered and contrasted with the promise offered by recent developments arising from the extension of chemical amplification techniques to the electron beam lithographic domain.
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    Molecular image-processing devices based on chemical reaction systems. I: General principles for implementation (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 179-190 
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    ISSN: 1057-9257
    Keywords: Molecular computing ; Molecular neurocomputer ; Molecular image-processing devices ; Computational complexity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Potentialities for implementing simple neural information-processing devices based on chemical and biochemical dynamical media are discussed. Pilot ‘hardware’ models of neural molecualr devices that able to perform image-processing operations were constructed.
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    Artifice and artefacts, 100 essays in materials science. Robert W. Cahn. Institute of Physics Publishing, Bristol, ISBN 0 7503 0152 X xiii + 365 pp. £19.95 or $39.90 (paperback) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-233 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040307
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    Dynamics of impurity-related optical switching in CdS near the band edge (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 41-49 
    Details
    ISSN: 1057-9257
    Keywords: Front optical switching ; Optical non-linearities impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present a dynamic theory related to experiments on the induced transmission of doped CdS crystals under pulsed laser excitation at 2 K at frequencies just below the band gap. Numerical simulations of the optical switching front which describes the non-linear spatio-temporal dynamics of the switching process from low to high transmittivity and back are performed for two different two-level models. These are associated with two different bleaching mechanisms of the acceptor-conduction band transition.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030107
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    Anisotropy of dissolution and microrelief of II-VI semiconductor compound surfaces (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 67-72 
    Details
    ISSN: 1057-9257
    Keywords: Anisotropy ; Dissolution ; Microrelief ; II-VI semiconductor compounds ; Light figures ; Etching ; Electron beam lasers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The shape, crystallographic orientation and size of microrelief elements of various surfaces of CdS, ZnSe and ZnO monocrystals after chemical etching have been studied. When illuminated with a focused laser beam, the microrelief creates a symmetric light pattern, or light figures, on the opposite surface whose shape corresponds to the crystal symmetry.The effects of the dissoltion rate and etching time on the form, size and angles of the microrelief elements in the temperature interval from 263 to 333 K were investigated. During etching, laser light was also used to convert the process of selective etching into a polishing process. To elucidate the relationship between the crystallographic orientation of the microrelief elements and the dissolution anisotropy, mean etching rates were determined and polar diagrams of resistance to dissolution were constructed for {1120} and {0001} by the Gross method. The relation between the kinetics of dissolution and the structure of the chemical bonds is discussed.The light figures formed by the surface microrelief enabled us to carry out the approximate orientation of semiconductor planes and solid samples. In the early stages of dissolution one may determine the density and distribution of the microscopic etch pits. The microrelief created on the side surfaces and the ‘fully reflected’ mirrors of II-VI semiconductor lasers pumped by electron beam or optical radiation promote the multiple enhancement of laser power and efficiency.
    Additional Material: 4 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030110
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    Origin of the stokes shift in semiconductor quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 95-101 
    Details
    ISSN: 1057-9257
    Keywords: Stokes shift ; Quantum wells ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Excitonic energy levels have been calculated in CdTe quantum wells with Cd1-xMnxTe barriers. It has been shown that the introduction of small-scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line-widths can remain narrow. A criterion for the existence of high-quality interfaces, based on optical spectra, is described.
    Additional Material: 7 Ill.
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    Photoluminescence and efficiency of Ce3+ in SrS powders (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 131-136 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compound ; SrS : Ce ; Photoluminescence ; Concentration quenching ; Phosphorescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The luminescence efficiency of SrS: Ce powders in the doping range from 0.01 to 1.0 at.% was investigated by photoluminescence decay studies. The radiative decay time of Ce3+ in SrS was determined to be 27 ns. The onset of concentration quenching at concentrations higher than about 0.7 at.% has been obtained. The photoluminescence spectrum of Ce3+ exhibits two emission bands as a consequence of the ground state splitting. The Huang-Rhys factor of the 5d-4f transition was estimated to be about 6. The inhomogeneous broadening of the emission band of samples with higher doping level has been investigated by site-selective and time-resolved spectroscopy.
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    Inorganic materials. D. W. Bruce and D. O'Hare. Wiley, Chichester, 1992, ISBN 0 471 928895 £58.00 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-234 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040308
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    Announcement (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 239-239 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040310
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    Guest Editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 241-242 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040402
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    Peculiarities of the quantisation of the energy spectrum of gapless semiconductors in a magnetic field under space confinement (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 57-65 
    Details
    ISSN: 1057-9257
    Keywords: Energy spectrum ; 2D systems ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: An exact solution for the zero boundary condition of the problem of carriers in spatially confined gapless semiconductors in a magnetic field is presented. Three cases are analysed: (i) the semiconductor occupies a half-space and the magnetic field orientatin is H ⊥ n (n is the surface normal); (ii) and (iii) a film of a gapless semiconductor at two orientations of the magnetic field, i.e. H ⊥ n and H | n respectively. It is shown that since the energy spectrum of gapless semiconductors is formed by strong relativistic spin-orbit interaction, significant peculiarities of the quantisation of the electron energy spectrum occur in all cases considered. Experiments to check the results obtained are discussed.
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    Novolac-based resists (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 75-82 
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    ISSN: 1057-9257
    Keywords: Novolac resins ; Positive-working resists ; DNQs ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The performance of novolac-diazonaphthoquinone-based positive-working resists is discussed in terms of the molecular weight distributions and microstructures of the novolac resins and the structural variations in the photoactive dissolution inhibitor. Modelling studies leading to recent improvements allosing the delineation of 0.35 μm line and space pattens by ensuring a focal depth of 105 μm are outlined. Consideration is also given to the new problems such as pivotal shift and halation that arise in the application of high-resolution photolithography using novolac-diazonaphthoquinone resists.
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    p-Doping of GaAs and AlGaAs using the triethylamine adduct of dimethylzinc (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 343-347 
    Details
    ISSN: 1057-9257
    Keywords: Dimethyzinc ; Adduct ; MOVPE ; GaAs (p-doping) ; AlGaAs (p-doping) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The adduct between dimethylzinc and triethylamine has been used as a p-dopant source in the growth of GaAs and Al0.3Ga0.7As alloys by metalorganic vapour phase epitaxy (MOVPE). The dopling efficiency of this adduct in these alloys and in InP is lower than that of dimethyl zinc.
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    Electron-beam-pumped laser emitters with microrelief mirrors based on II-VI semiconductorsPresented at European II-VI Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 365-371 
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    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Generation ; Longitudinal electron beam pumping ; Microrelief ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The power characteristics of electron-beam-pumped emitters based on II-VI compounds have been stukdied. The use of a microrelief with direction-selective reflective properties instead of a totally reflecting miror has made it possible to provide effective sukppression of closed non-characteristics and efficiency of lasers and to make them suitable for obtaining generation with high efficiency in a number of media, in particular YAG:Nd3+, KGW:Nd3+ and Lif:F2+ (OH), at room temperature.
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    Crystallographic orientation and light emission of streamer discharges in II-VI semiconductorsEuropean II-VI Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 373-380 
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    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Streamer ; Electric discharge ; Luminescence ; Generation ; Crystallographic orientation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Some results of Investigations on the crystallographic orientation, luminescence and stimulated emission of streamer discharges in monocrystals of hexagonal CdS, CdSe and ZnO and cubic Znsand Snseare presented.
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    In situ optical monitoring of the movpe growth of ZnSe on GaAs (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 401-405 
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    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSe ; Growth mechanism ; Surface chemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In situ optical reflection measurement was employed to study surface processes during the MOVPE growth of ZnSe films under an alternate supply of diethylzinc (DEZn) and dimethylselenide (DMSe) using H2 and/or N2 as carrier gases. We have found that the time-dependent reflection signal exhibits a unique saw-toothed pattern during the DEZn supply, which is attributed to the adsorption and structural change of the DEZn. In contrast, the influence of DMSe on the time-dependent signal appears to be rather marginal. A growth mechanism is proposed based on these experimental results, through which the important role of ambient hydrogen is discussed.
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    Optically stimulated intersubband absorption in undoped amorphous Si/SiO2 qiantum well (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 417-421 
    Details
    ISSN: 1057-9257
    Keywords: Amorphous quantum wells ; Intersubband transitions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Intersubband absorption has been observed in undoped amorphous multiple-quantum-well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non-equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm-3) in the ground conduction subband.
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    Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 151-161 
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    ISSN: 1057-9257
    Keywords: MOVPE ; (Hg, Cd)Te ; Decomposition products ; GC-MS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The pyrolysis reactions of di-isopropyl telluride and dimethyl cadmium, both alone and in combination and with and without mercury, have been studied using the technique of gas chromatography-mass spectrometry (GC-MS). For example, when mercury and dimethyl cadmium are mixed in hydrogen at the growth temperature (370°C), the volatile products observed are methane, ethane and dimethyl mercury. In contrast, when di-isopropyl tellurideis substituted for the cadmium precursor in this reaction, the products observed are propane, propene and 2,3-dimethylbutane with no volatile mercury-containing compounds. Heating the two organometallic precursors together at the growth temperature in the absence of mercury gives products expected from the pyrolysis of each one alone plus a number of interaction products such as 2-methylpropane. The results of these studies will be presented, a mechanism for the reactions proposed and the implications for MOVPE growth discussed.
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    Radiative efficiencies and deep levels in zinc selenide (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 199-202 
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    ISSN: 1057-9257
    Keywords: Zinc selenide ; Luminescence ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Although zinc selenide and related materials are promising for blue light-emitting diodes and lasers, present performance is unsatisfactory. The blue radiative efficiency at room temperature is low and the decay time of luminescence is correspondingly short. It is argued that the problem is non-radiative recombination by the Hall-Shockley-Read mechanism at deep levels and that the concentration of these levels must be high. Experimental evidence for the existence of such levels is presented. Characterisation and control of deep levels will be essential for progress in this area.
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    A comparison of the diffusion of copper, gallium and cadmium in cadmium telluride (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 209-215 
    Details
    ISSN: 1057-9257
    Keywords: Diffusion ; Cadmium telluride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The rates of diffusion of both Ga and Cu in CdTe have been measured over the temperature ranges 350-820 and 200-400°C respectively and the results are compared with the self-diffusion of Cd (350-920°C).In the case of the Cd self-diffusion the Arrhenius graph showed two active diffusion mechanisms, one dominating above 500°C and the other below. It suggested that in the temperature range 500-800°C the main defect responsible for diffusion was Cdi-, with a significant contribution at lower temperatures from the associated defect of the form (CdiVcd)x Below 500°C another mechanism predominated which was possibly due to residual impurities.The results for the diffusions were in close agreement with those obtained by other workers. The Ga diffusions showed a complex behaviour which suggested that two mechanisms were active simultaneously, one independent of Cd partial pressure and the other decreasing with increasing Cd partial pressure.It was concluded that CdTe would be suitable as a diffusion barrier to protect HgxCd1 - xTe devices from Ga contamination from GaAs substrates but would not be efficient at reducing Cu contamination from the substrate in the device.
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    Comparison of two approaches to forced convection in crystal growth of II-VI compounds by THM (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 233-238 
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    ISSN: 1057-9257
    Keywords: Solution growth ; THM ; HgCdTe ; CdZnTe ; Forced convection ; ACRT ; Solvent inclusions ; IR microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hg1 - xCdxTe and Cd1 - xZnxTe single crystals were grown by the tracwelling heater method (THM), applying two different techniques of artificially stirring the solution zone. Accelerated crucible rotation (ACRT) was used in a vertical growth arrangement and compared a technique with constant rotation around the horizontal axis of the ampoule. The dominant hydrodynamic mechanisms of noth methods are discribed by the rotating disc model and are suggested to be almost identical with respect to the growth conditions at the interface. Convective flow is effectively enhanced adhacent to the growing crystal, where the matter transport is regarded as the rate-limiting step of solution growth. Inclusion density analysis by IR microscopy was used to characterise the crystals of Cd1 - xZnxTe grown at different rates. It was shown that forced convection allows an increase in the crystal growth rate from a few mm day-1 with ACRT or horizontally rotating THM.
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    Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularisation method: Application of compensation defects in CdTe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 269-274 
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    ISSN: 1057-9257
    Keywords: Compensation defects ; PICTS ; CdTe ; Tikhonov regularisation ; III-posed problems ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A detailed analysis of photoinduced current transients of differntly grown CdTe:Cl samples was performed in the 100-130 K range in order to investigate the influence of the different growth techniques (sublimation, Bridgman method and travelling heater method (THM)) on the compensation defects. The transients were evaluated using a regularisation method (fast Tikhonov regularisation) as implimented in the program FTIKREG. The advantages of the regularisation method in comparison with the customary two-gate technique are demonstrated by the analysis of simulated data. It can be shown that the different growth techniques have only one level in common. Furthermore, the superposition of different traps can lead to wrong results using the conventional two-gate technigque. The temperature dependence of the relaxation times is evaluated and the corresponding trap parameters are determined.
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    Liquid crystalline hydrogen-bonded complexes formed between alkoxystibazoles and phenols (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 273-276 
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    ISSN: 1057-9257
    Keywords: Liquid crystals ; Hydrogen bonding ; Phenols Stilbazoles ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Mesomorphic materials formed by hydrogen bonding between 4-alkoxystillbazoles and some phenols are described.
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    Isomorphous mixing of mesogenic anions and uncharged analogues in organised poly(ehtylene oxide)-alkali salt complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 265-271 
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    ISSN: 1057-9257
    Keywords: Poly(ethy1ene oxide)-salt complexes ; Anionic mesogens ; Uncharged mesogens ; Isomorphous mixture ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The preparation and characterisation of novel ionic polymer liquid crystal complexes of poly(ethylene oxide)-Na+ with mesogenic anions and their uncharged structural analogues in homogeneous mixtures are described. The systems discused most fully are the anion of the phenolic mesogen 4-n-hexyloxybenzylidene-4-hydroxy aniline (1) with its uncharged analogue 4-n-hexyloxybenzylidene aniline (1a) and the anion of 5-(4-n-octyloxy-2,3-dicyanophenyleneoxycarbonyl)benzimidazo-le (2) and its uncharged analogue 4-octyloxy-2,3-dicyanophenyloxybenzoyl (2). Differential scanning calorimetry, wide angle x-ray diffraction and polarised light microscopy show that PEO-Na1/1a and PEO-Na2/2a are homogeneous mesogenic phases when Na1 or Na2 are present at 50% or less of the stoichiometric composition in complexes (EO : salt = 3 : 1) and the shortfall is made up from 1a or 2a uncharged analogues of 1a and related systems substituted by methoxy rather than hydrogen do not form homogeneous mixtures.
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    Macroscopic non-linearities of some stilbazolium derivatives and the calculatium derivatives and the calculation of their molecular hyperpolarisability (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 293-301 
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    ISSN: 1057-9257
    Keywords: Non-linear optics ; stilbazolium salts ; MOPAC calculations ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The synthesis of some optically non-linear stilbazolium salts is described. Since their solid state non-linearities were small, MOPAC5 was used to compare their relative molecular non-linearities.
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    Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au-GaSb schottky diodes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 319-325 
    Details
    ISSN: 1057-9257
    Keywords: GaSb ; Photodiodes ; Schottky diodes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Oxide removal from GaSb surfaces by several wet chemical treatments and subsequent thermal annealing was investigated. Preferable wet chemical treatments by which surface oxides could be removed effectively at room temperature were evaluated in the experiments. This method can be effectively applied to fabrication processing of MBE GaSb photodoides and Au-GaSb Schottky doides. Low-reverse-leakage GaSb photodiodes and near ideal Au-GaSb Schottky diodes were thus obtianed.
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    MOVPE growth and characterization of ZnSxSe1 - x/ZnSe quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 191-198 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSSe ; GaAs substrate ; MOVPE ; Photoluminescence ; Quantum well ; Interface properties ; Growth interruption ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this work we report on ZnSxSe1 - x/ZnSe quantum wells grown by atmospheric pressure MOVPE on GaAs substrates. Diethylznc (DEZn), diethylselenium (DESe), diethylsulphur (DES) and H2S were used as source materials. Binary quantum wells with ZnSe or ZnS as barrier were usually grown in sets of 10 pairs on a 0.5 μm ZnSe or ZnS buffer, respectively. QWs with different well thicknesses (1-4 nm) show a typical shift to higher energies with decreasing well thickness and also a large decrease in PL intensity with increasing well thickness. Owing to the onset of relaxation above 5 nm well thickness, no PL emission could be observed. QWs of the same thickness but grown at different temperatures (420-520°C) show a broadened line shape with decreasing growth temperature. Growth interruption (3-50 s) also causes a broadening of the PL emission with decreasing interruption time. This is caused by interface reconstruction at higher growth temperatures and longer growth interruption. A ZnS buffer of 0.5 μm improves the PL line shape compared with a ZnSe buffer.ZnSxSe1 - x/ZnSe single and multiple QWs (Lz = 1-4 nm) were grown to reduce the strain in the structures. A typical quantum confinement energy shift of 160 meV for the 1 nm well can be observed in ZnS0.68Se0.32/ZnSe QWs. In comparison with the binary QWs, the FWHM could be reduced by about a factor of two to 34 meV. This improvement was obtained by an optimisation of the switching process to prevent the desorption of sulphur from the ZnSSe during the growth interruption.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030127
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    Langmuir-blodgett films of stilbazole complexes of iridium(I) and rhodium(I) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 243-251 
    Details
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett film ; Stilbazole ; Metal complex Iridium ; Rhodium Pyroelectricity ; Alternate layer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Complexes of 4-alkoxystilbazoles with iridium and rhodium form stable Langmuir layers at the air-water interface even when the alkoxy chain is relatively short (C5-C12). The surface pressure-area isotherms indicate that condensed molecular monolayers are obtained. The area per molecule of each compound in its monolayer form is typically 0.60 nm2, which agrees well with the cross-sectional area of the [Ir(CO)2CI] or [Rh(CO)2CI] head group predicated using molecular models. This suggests that the molecules are oriented with the metal moiety close to the water surface and their alkoxystilbazole ‘rod’ protruding from the plane of the water surface. Such floating monolayers have been transferred on to solid substrates such as glass, aluminium (AI2O3/AI/Glass) and silicon (SiO2/Si) at relatively high speed (10 mm min -1) to form Y-type LB assemblies. The UV-Visible absorption properties of these materials in solution and LB film form have been studied. LB films of these complexes yield bathochromically shifted spectra relative to the LB film spectrum of the uncomplexed stilbazole. Additionally, these spectra are often broader and hypsochromically shifted relative to their corresponding solution spectra as a result of the close molecular packing within the LB film and the associated dipole-dipole interactions.The electrically polar nature of the molecules described in this paper suggest that they may be suitable candidates for new pyroelectric materials. Thus the pyroelectric coefficient (the rate of change of electric polarisation with respect to temperature) has been measured for a polar multilayer LB film containing an iridium complex. A pyroelectric coefficient of 3.5 μCm-2K-1 (at 30 °C) has been measured, which is one of the highest reported valued for an LB film. Additionally, a low dielectric loss of around 0.01 has been found over the frequency range 50 Hz-1 kHz, indicating that such LB films may be usfeul materials for pyroelectric sensors.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040403
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040501
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    Foreword (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 1-1 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030102
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    Mixed alkyl zinc or cadmium complexes with dialkyl thio- or selenocarbamates: Precursors for cadmium chalcogenides (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 171-175 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A series of new compounds [RME2CNR′2]2 (R and R′ are various alkyl groups, e.g. M ≡ Zn or Cd, R ≡ Me, R′ ≡ Et) have been synthesised and characterised. The compounds can be used as single molecular precursors for the deposition of the corresponding binary chalcogenides. In the present paper the range of compounds synthesised and their uses are reviewed. Preliminary observations on the deposition of thin films on glass and GaAs(100) substrates are reported.
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    Effects of rapid thermal annealing on the electrical properties of Hg1 - xCdxTe bulk crystals (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 177-182 
    Details
    ISSN: 1057-9257
    Keywords: RTA ; Mercury Cadmium ; Telluride ; Hall characterization ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper reports the change in the bulk transport properties of p-type MCT samples induced by a rapid thermal annealing (RTA) process. This change is produced homogeneously within the crystal without interchange of mercury with the surrounding atmosphere. The carrier concentration varies towards an equilibrium value that depends only on the annealing temperature. For the material and temperatures investigated (250-420°C) the equilibrium carrier concentration depends exponentially on the inverse of the temperature, its value ranges between 1 × 1017 and 4 × 1017 cm-3. The time needed to reach equilibrium is a function of the temperature, varying from 10 s at 420°C to 200 s at 250°C. The hole mobility is also affected by the RTA process, its evolution being a function of the process temperature and time. A model is proposed to explain these modifications based on a reaction of generation-annhilitation of mercury vacancies and interstitials that would take place within the crystal with no external interaction.
    Additional Material: 5 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030125
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030101
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    Controlling the interface between II-VI and III-V semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 3-9 
    Details
    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; Raman spectroscopy ; In situ characterisation ; II-VI/III-V ; CdTe ; CdS ; III2VI3 ; Interface ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper describes ways in which the interface between II-VI and III-V semiconductors can be controlled so as to suppress or alter commonly observed interfacial reactions. This will be done using CdTe/InSb and CdS/InP heterostructures as examples. In the case of CdTe/InSb a modification of the interfacial properties is achieved by a variation in the II/VI ratio offered to the surface during growth, while the influence of Sb interlayers is studied for CdS on InP. Information on the interface properties is obtained from Raman spectroscopy. While structural and electronic properties of the II-VI layer can be deduced from the scattering intensities of its characteristic vibrational modes, the formation of interfacial compounds is observed by the appearance of scattering intensity in a different spectral range, which is consistent with the formation of III2VI3 compounds. The potential of Raman spectroscopy for on-line in situ monitoring of growth processes will be displayed.
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    URL: http://dx.doi.org/10.1002/amo.860030103
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    Stimulated emission in ZnSxSe1 - x/ZnSe heterostructures grown by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 73-80 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSxSe1 - x ; MQW ; Optical properties ; Lasing Exciton ; Electron-hole plasma ; Dynamics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Non-linear and stimulated emission of ZnSxSe1 - x/ZnSe multilayer structures grown by MOVPE on GaAs is investigated by means of high-density excitation spectroscopy using a high-resolution pulsed excimer-dye laser system as well as a picosecond titanium-sapphire laser for time-resolved measurements. Heterostructures with ZnSe layers or single and multiple quantum wells were grown in which the ZnSe layer widths were varied between 1 nm (strong quantum confinement) and 500 nm (quasi-bulk situation). The sulphur concentration in the ZnSxSe1 - x buffer, barrier and cap layers was chosen between x = 0.045 and x = 0.74 in order to find the most promising compromise with regard to maximum band offset to ZnSe for most efficient carrier confinement and suitable waveguiding properties depending on variation in the refractive index, and to highest structural quality of the actively emitting ZnSe layers. Stimulated emission is found to occur in all samples, being brightest in the sample with the lowest sulphur concentration in the cap and barrier layers. Its dynamical properties point to a probable interpretation in terms of electron-hole plasma creation, which, however, may not be the basic process in narrow-quantum wells or strongly structurally disturbed samples.
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    URL: http://dx.doi.org/10.1002/amo.860030111
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    Laser processes in wide gap II-VI semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 103-109 
    Details
    ISSN: 1057-9257
    Keywords: Laser emission ; II-VI semiconductors ; Many particle effects ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a brief historical remark about the evolution of scientific interest in wide gap II-VI compounds, we review the various laser processes which have been identified in bulk materials and thin layers during the last 25 years. We then proceed to quantum wells and superlattices and stress the differences from III-V compounds. We finish by considering the exploitation of specific properties of widegap II-VI compounds for light-emitting and laser diodes.
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    Dynamical aspects of free exciton-magnetic polaron formation in CdTe-Cd1 - xMnxTe quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 117-125 
    Details
    ISSN: 1057-9257
    Keywords: Exciton-magnetic polaron ; Quantum well ; Dilute magnetic semiconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Calculations of the energies of magnetic polarons formed by free excitons localised in non-magnetic CdTe wells next to magnetic Cd1 - xMnxTe barriers are presented. A comparison with recent time-resolved spectroscopy results allows insight to the physical aspects governing the dynamics of the formation of the polarons. It is shown that the experimentally measured energy shift is not the polaron energy itself but the difference between this and the change in the exciton binding energy. The latter is calculated within the envelope function approximation and by employing a variational technique. The polaron energy calculation uses a modified version of an approach described by Wolff.The results show that static polaron calculations are not generally reliable and that the exciton-magnetic polaron has to be viewed as a dynamically evolving complex. It is initially energetically favourable for the exciton-magnetic polaron complex to increase its spatial localisation, since the gains in polarisation energy exceed the loss in exciton binding energy. However, thermodynamic considerations suggest that in general saturation of the magnetic ions will not occur.
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    URL: http://dx.doi.org/10.1002/amo.860030117
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    Spin-polarised tunnelling current in metal-insulator-gapless semiconductor structures in a magnetic field (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 127-130 
    Details
    ISSN: 1057-9257
    Keywords: Tunneling ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental investigations of tunnelling conductivity oscillations of metal-insulator-gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low-bias maxima decrease monotonously, and at H ⊥ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.
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    URL: http://dx.doi.org/10.1002/amo.860030118
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    Homogeneious linewidth and relaxation of excited hole states in II-VI quantum dots (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 141-150 
    Details
    ISSN: 1057-9257
    Keywords: Semiconductor-doped glasses ; Non-linear optical materials ; Differential absorption spectroscopy ; Scattering processes ; II-VI compounds ; Quantum dots ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: By use of differential absorption spectroscopy at different temperatures we investigate the homogeneous line broadening of small CdSxSe1 - x quantum dots embedded in glass. Our experiments show the strong correlation between the precipitation stages and characteristics optical parameters such as the saturation intensity and the longitudinal and transverse relaxation times. In samples grown in the diffusion-controlled regime to avoid coalescence, we find after strong laser excitation for the first time spectrally narrow holes in the non-linear differential absorption spectra. These sharp non-linear resonances with a halfwidth Γ of only 10 meV at T = 20 K allow us to investigate the energetic distance of the lowest hole levels and the temperature dependence of the line broadening. The different contributions of LO phonon coupling and temperature-independent scattering to the homogeneous linewidth will be analysed. The relaxation from the excited hole states has been investigated by exciting in the higher-energy hole states and measuring the resulting change in the ground state absorption.
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    URL: http://dx.doi.org/10.1002/amo.860030121
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    High-resolution scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) of ZnSxSe1 - x/ZnSe Quantum Wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 183-190 
    Details
    ISSN: 1057-9257
    Keywords: Scanning transmission electron microscopy (STEM) ; High-resolution ; Z-contrast ; ADF ; HAADF ; Electron energy loss spectroscopy (EELS) ; ZnSxSe1 - x/ZnSe quantum wells ; MOVPE ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial growth techniques for ZnSxSe1 - x/ZnSe heterostructures have already achieved a high degree of development. Further improvements strongly require characterisation techniques with high compositional sensitivity and high spatial resolution. Therefore in this work high-resolution Z-contrast, which provides compositional information down to the atomic scale, has been used for the first time to characterise ZnSxSe1 - x/ZnSe quantum well structures. The influence of structural defects on Z-contrast is demonstrated by comparison of scanning transmission electron microscopy (STEM) bright field images and STEM Z-contrast micrographs of planar defects and dislocations. The compositional abruptness of ZnSxSe1 - x/ZnSe interfaces in MOVPE-grown quantum well (QW) structures is judged from high-resolution Z-contrast micrographs. Electron energy loss spectroscopy (EELS) measurements were performed for the first time in ZnSxSe1 - x/ZnSe QW structures in order to obtain quantitative compositional information with nanometre spatial resolution. From EELS line scans, which monitor the selenium concentration across ZnSe QWs, the obtainable spatial resolution is estimated to be about 1-2 nm. The problems that have prevented quantitative analysis of the selenium concentration up to now are discussed.
    Additional Material: 7 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030126
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    Plasma-enhanced MOVPE and nitrogen doping of ZnSe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 203-208 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; Diallylselende ; Plasma ; MOVPE ; Nitrogen doping ; Raman spectroscopy ; Photoluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In order to obtain high quality Znse epilayers on GaAs which can be intentionally P- and n-type doped growth at a reduced temperature is highly desirable. Therefore in this work the suitability of diallylselenide and the influrnce of plasma precracking have ben investigated. Photoluminesscence, Raman spectroscopy, scanning electron microscopy, X-ray, SIMS and Hall measurements were used to anaylse the samples. The selenium precursor was fully decomposed at temperatures above 360°C if it was precracked by a plasma. Bound excitions could be resolved with negligible donor-acceptor pair (DAP) and copper green emission in the PL spectra form films which were grown with a plasma at temperatures beyond 530°C. Clearly the hpe for reduction in the deposition temperature was not achieved. Raman spectra also revealed strong crystalline quality variations. For the doping experiments nitrogen was used as the carrier gasa instead of hydrogen. Plasma cracking of the selenium precursor was still necessary. Thye substitution of the H2 carrier gas by nitrogen reduced the growth rate by a factor of 2.6 but enhanced the crystalline properties of the samples as shown by the Raman measurements. Strong DAP emission at 2.7eV in the (PL) spectra was observed. SIMS measurements showed a nitrogend concertration of about 3 × 1017 cm-3. An additional nirtogen plasama (0-7W) had a begligible effect on the nitrogen concentration in the sample. The samples were semi-insulating, whichmight be a conswquence of the crystalline quality of ZnSe grown with DASe as selenium precursor.
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    GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 239-245 
    Details
    ISSN: 1057-9257
    Keywords: Substrates ; MOVPE ; MCT ; Surface morphology ; Structural properties ; Photoconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal procesing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (h11) GaAs substrate orientation and polarity on the structrual properties and surface morphology of CdTe layers grown by MOVPE has ben carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as ezplained by a model taking into accountthe type of dangling bonds at the interface. The performance of photoconductors fabricated on(Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (311)B orientation.
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    Photoluminescence spectroscopy as a tool to assess extrinsic impurities and quality of ZnSe and ZnSxSeI - x grown by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 261-267 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSxSe1 - x ; MOVPE ; Photoluminescence ; Mapping ; Purified ; DESe source ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we report new results concerning the cause of impurities responsible for the Ix, and I2-peaks in photoluminescence (PL) spectra of ZnSe grown by MOVPE. An improvement in ZnSe epilayer quality is obtained by using a metal organic selenium precursor with reduced chlorine concentration. The PL spectrum of such a layer shows typical excitonic transitions, but compared with samples grown with a more contaminated source, the intensity of the Ix, and the I2 peaks decreases relative to the free exciton transition. A Gaussian fitting of the donor-bound exciton peaks taking the background of other structures into account shows that the ratio between the Ix and I2 peaks does not differ significantly between two samples. Both the decrease in donor-bound exciton transitions and the unchangeability of the ratio Ix/I2lead to the conclusion that only chlorine impurities are responsible for Ixand Ix. In order to verify the homogeneity of impurity uptake across a 2 inch wafer, we performed PL mapping of ZnSxSe1 - x layers. Mapping of a 2 inch ZnSe wafer shows that the FWHM of Ix across a wafer does not vary significantly (1.55 ± 0.21 meV). On mapping a 2 inch ZnS0.3Se0.7 wafer fabricated with H2S as the sulphur source at TD = 480°C, we found a rotational symmetric dstribution of sulphur in the layer. The sulphur content x at the centre is nearly constant. The difference in x between the centre and the boundary of a bad surface region at the edge of the wafer is less than Δx = 0.045. The FWHM of the band edge luminescence follows the same tendency across the wafer. The dependence of homogeneity on the reactor design as well as the uptake of unintentional impurities from the precursor is discussed in detail.
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    Phosphorescent spectral and decay studies of CaI - xSrxS:Ce solid solutions (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 283-288 
    Details
    ISSN: 1057-9257
    Keywords: Phosphors ; Alkaline ; Earth sulphides ; Photoluminescence ; CaS ; SrS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Ca1 - xSrxS Solid Solutions at 10 m/o intervals have been prepared by coprecipitation of sulphates from aqueous solution followed by reduction at 1000°C with hydrogen. Phosphorescence emission spectra have been determined for these solid solutions doped with 0.1 m/o cerium and show a blue shift with increasing strontium content from 2.46 to 2.59 eV. Hyperbolic phosphorescent decay curves were observed at both room and liquid nitrogen temperatures across the composition range and have been broken down into three exponential components by graphical and computer-programme-based methods. At room temperature trap depth values of 0.366, 0.316 and 0.282 eV with measured lifetimes of 1.9, 0.26 and 0.07 ms respectively were determined with little dependence on composition. At liquid nitrogen temperature shallower traps were observed at 0.103, 0.086 and 0.076 eV with respective decay times of 5, 0.4 and 0.09 ms having little sensitivity to changes in the host compostion. These traps are related to intrinsic defects, some of which may be surface in character. The blue shift in emission peak energy with the decrease in band gap from CaS to SrS is discussed.
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    URL: http://dx.doi.org/10.1002/amo.860030140
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    A new, thermally efficient route to crystalline BaTiO3 from monodispersed rutile powder (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 9-17 
    Details
    ISSN: 1057-9257
    Keywords: Barium ; Rutile ; Ammonia ; Barium titanate ; X-ray powder diffraction ; Scanning electron microscopy ; Thermogravimetric analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Treatment of monodispersed rutile (TiO2) powder with an ammonlacial solution of elemental barium gives a uniformly coated precursor to BaTiO3. Thermolysis at about 900 °C for 6 h gives crystalline (by XRS) material with an average particle size of less than 0.1 μm (as determined by SEM).
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    Liquid crystal flat panel displays. W. C. O'Mara. Van Nostrand Reinhold (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 51-52 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040108
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  • 96
    Electronic Resource
    Electronic Resource
    Guest editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 53-53 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040202
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  • 97
    Electronic Resource
    Electronic Resource
    Silylation and dry procession (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 129-138 
    Details
    ISSN: 1057-9257
    Keywords: Silylation ; Dry development ; Photoresist ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The issues of dry development and self-developing resists are addressed in this paper by way of an introduction to the main topic of surface imaging, in which diffusion-enhanced vapour plhase silylation chemistries and their mechanisms are developed with specific reference to resists that function through the DESIRE process. More recent liquid phase silylation processes are also considered.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040207
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  • 98
    Electronic Resource
    Electronic Resource
    Wet development of polymer resists: A guide to solvent selection (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 155-163 
    Details
    ISSN: 1057-9257
    Keywords: Wet development ; θ-Solvents ; Cosolvents ; Rate of dissolution ; Polymer resists ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The criteria for selecting effective solvent systems for wet development of polymer resist materials are explored. Methods of estimating the polymer-solvent interactions are described, including the use of solubility parameters and the Flory-huggins interaction parameter. Methods of achieving θ-conditions, which represent minimal solvent-precipitant mixtures, or the more novel approach of establishing cosolvent systems are described. The rate dissolution has also bee identified as a controlling parameter. Some optical and gravimetric methods for measuring dissolution rates for polymer films are outlined. Examples of the influence of these factors on the sensitivity and contrast of resists such as poly(methylmethacrylate) and poly(p-methyl styrene-stat-chloromethyl styrene) are described.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040209
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  • 99
    Electronic Resource
    Electronic Resource
    Phase transition from the cubic to the hexagonal modification in thin CdS films on InP(110) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 11-14 
    Details
    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; CdS ; Crystal structure ; Photoluminescence ; Reflection ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: CdS films were prepared by molecular beam epitaxial growth on clean cleaved InP(110) substrates. Films with thicknesses in the 200 nm range were studied by optical techniques: spectroscopic ellipsometry, reflection and photoluminescence. The film thickness and the dielectric function of the films are evaluated from the ellipsometry data. The feature in the imaginary part of the film dielectric function which is induced by the E1 interband transition in CdS is found to be extremely sensitive to the crystal modification. A splitting of this feature occurring at approximately 200 nm indicates a phase transition in the thin films from the cubic to the hexagonal modification. This is confirmed by reflection measurements which show two series of reflection loops for both modifications for film thickness exceeding 200 nm. The energy positions of the free excitons of the hexagonal and cubic modifications are derived. In addition, the band gap for the cubic modification is determined for the first time. The photoluminescence spectra also reveal cubic and hexagonal contribution of donor-acceptor pair recombinations. From the excitonic transitions attempts are made to identify the main impurities in the layers.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030104
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  • 100
    Electronic Resource
    Electronic Resource
    Gain and dynamics of excitons in MOVPE-grown ZnSe/ZnSxSe1 - x heterostructures (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 51-55 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; Quantum wells ; ZnSe/ZnSxSe1 - x heterostructures ; Gain ; Excitons ; Luminescence dynamics ; Transfer processes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Optically pumped stimulated emission in ZnSe/ZnSxSe1 - x heterostructures grown by MOVPE has been observed up to 170 K. Gain measurements have been performed using the variable stripe length method. The underlying gain mechanism at 25 K is atributed to an excitonexciton scattering process. Photoluminescence excitation spectra and the temporal evolution of the luminescence indicate a transfer process from the ZnSxSe1 - x barrier into the ZnSe active layer.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030108
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