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  • Articles  (13,969)
  • Springer  (13,969)
  • National Academy of Sciences
  • 1995-1999  (8,716)
  • 1975-1979  (5,253)
  • Electrical Engineering, Measurement and Control Technology  (13,969)
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  • Articles  (13,969)
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  • 1
    Electronic Resource
    Electronic Resource
    The study of LIGA technique at NSRL (1996)
    Springer
    Microsystem technologies 2 (1996), S. 171-173 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  The activity of LIGA technique was started in the fall of 1993 at National Synchrotron Radiation Laboratory (NSRL), some primary results have been obtained. Micro gearwheels were produced by deep-etch lithography using Hefei light source. The largest diameter of gearwheel is 200 μm, the smallest one only 35 μm, both with thickness of 50 μm. The first metallic structure of nickel was fabricated recently. The mask used in experiments was made by ourselves, it is a composite of kapton membrane as a mask blank, and gold as an absorber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050038
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  • 2
    Electronic Resource
    Electronic Resource
    Combination of LIGA with other microstructure technologies (1996)
    Springer
    Microsystem technologies 2 (1996), S. 162-166 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  The combination of the LIGA technique with other microstructure technologies like silicon technology, membrane technologies, and mechanical micromachining gives access to the development and manufacturing of new microsystems. The quasi-monolithic integration of LIGA microstructures on top of a CMOS-Wafer using a molding process will be shown which has the potential to integrate a LIGA component directly with microelectronic circuits. By combining mechanical micromachining, plastic molding, and membrane technologies a micropump has been developed which is one of the key components of the fluid handling module of microanalysis systems together with the well known LIGA microspectrometer. In the case of the micro-spectrometer, a small-scale series production was installed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050036
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  • 3
    Electronic Resource
    Electronic Resource
    Knowledge based support for manufacturing of microstructures (1996)
    Springer
    Microsystem technologies 2 (1996), S. 167-170 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  In the Institute of Applied Computer Science (IAI) in the Forschungszentrum Karlsruhe (FZK) information technologies are developed and applied to support the design and manufacturing process for micromechanical structures. The information related kernel of the computer integrated manufacturing (CIM) consists of different semantic domains. At the beginning of the whole manufacturing process, the designer has to construct the microstructure with a CAD system for mechanical construction. After application of design rule checks, based on heuristics from human experts, these constructions are the references for the quality control of the real fabricated structures. The knowledge in form of design rules needs as well deeper knowledge, stored in the different partial modes of the process model and the product model as well dynamical results of the different integrated tools for design, simulation and optimization. Especially this fact is the kernel to produce cost efficient because distinguishing between possible and impossible structures in a very early stage of manufacturing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050037
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  • 4
    Electronic Resource
    Electronic Resource
    Electrochemical post-processing of LIGA structures (1996)
    Springer
    Microsystem technologies 2 (1996), S. 178-181 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  The Louisiana State University (LSU) Microsystems Engineering Team (μSET) is developing techniques for producing microstructures with predictable 3-D geometry. One approach is based on controlled anodic dissolution of electroplated structures to obtain desired shapes. A finite element model was developed to predict the resulting shapes. As a demonstration of the shaping process, development of LIGA-based scanning probe microscope tips was investigated. An array of micro-posts 1.8 micrometers in diameter and 12 micrometers high was produced using x-ray lithography and subsequent electrodeposition. The posts were sharpened electrochemically. Other geometries are being investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050040
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  • 5
    Electronic Resource
    Electronic Resource
    Tensile testing of microfabricated thin films (1997)
    Springer
    Microsystem technologies 3 (1997), S. 117-121 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Mechanical properties of titanium thin films of 0.5 μm thickness and aluminum thin films of 1.0 μm thickness, microfabricated by magnetron sputtering, were measured by using a novel tensile machine. These thin films are difficult to handle because they are fragile, so the thin film specimens were fabricated by using semiconductor manufacturing technology in a silicon frame to protect them. The test section of these specimens was 300 μm in width and 1400 μm in gauge length. By gripping the thin film specimen with a new device using a micrometer, it could be mounted on the tensile machine easily. The stress-strain diagrams of both thin films were measured continuously in the atmosphere at room temperature. The experimental results indicated that the titanium thin film and the aluminum thin film had a smaller breaking elongation although they had a larger tensile strength than bulk pure titanium and bulk pure aluminum, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050067
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  • 6
    Electronic Resource
    Electronic Resource
    Novel fast atom beam (FAB) processes for fabricating functional nanostructures on three-dimensional microstructures (1997)
    Springer
    Microsystem technologies 3 (1997), S. 112-116 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  We have developed four manufacturing processes that use a fast atom beam (FAB) for fabricating functional nanostructures on three-dimensional (3-D) microstructures. Such fabrication involves two steps: (1) producing the 3-D microstructure; and (2) producing the nanometer-size functional structures at a local point on this microstructure. The FAB methods that we developed for the first step are the separated (non-contact) mask FAB (SM-FAB) and moving mask FAB (MM-FAB), and those for the second step are the nanometer-motion moving mask FAB (NMM-FAB) and electron-beam deposition-pattern FAB (ED-FAB). We previously demonstrated the capability of the SM-FAB, by producing a multi-faced microstructure, a micro gojyunoto (named after an old Japanese temple tower). In this study, we describe and demonstrate the capability of the MM-FAB, by producing multiple, multi-curved and sloped structure, a diffraction grating structure; the NMM-FAB, by producing ultra-fine stairs, 30 nm wide and 30 nm high; and the ED-FAB, by producing a GaAs line structure, 55.3 nm wide and 13.6 nm high. These results show that these FAB methods are effective in producing 3-D microstructures and nano-structures. Combinations of these methods will make it possible to produce functional nanostructures on 3-D microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050066
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  • 7
    Electronic Resource
    Electronic Resource
    Finite element investigations of the dynamical properties of microstructured membranes (1997)
    Springer
    Microsystem technologies 3 (1997), S. 171-177 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Microstructured membranes (microdia-phragms) are a tool for measuring quantities such as temperature, strain, or density by ultrasound, i.e. without any contact (e.g. by a wire connection). In this paper we study the dynamical properties of such microstructured membranes numerically by means of the finite element method. In particular, we consider the shape of the eigenmodes of the system and study the dependence of the corresponding eigenfrequencies on material and geometry parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050076
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  • 8
    Electronic Resource
    Electronic Resource
    Characterisation of defects in very high deep-etch X-ray lithography microstructures (1998)
    Springer
    Microsystem technologies 4 (1998), S. 89-93 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  In deep X-ray lithography synchrotron radiation is applied to pattern several hundred micrometer thick resist layers. This technique has been used to obtain micro structures with an aspect ratio up to 100 and dimensions in the micrometer range. The structures are characterised by straight walls and a typical sidewall roughness of approximately 50 nm. To be able to fabricate n-coherent structures with any lateral shape and to have the possibility to use these resist microstructures in an additional electroforming process the resist is usually mounted on a ceramic or metallic substrate. Due to the different thermal expansion coefficients of the resist material and the substrate a developing temperature of 37 °C produces cracks in the resist structures depending on the microstructure design. These defects are not observed if the developing temperature is reduced to 20 °C. Better structure quality is obtained using the GG-developer instead of MIBK/IPA, but the developing rate is decreased. Measurements of the developing rate of PMMA in GG-developer at different temperatures show that the contrast of the developer-resist system is increased at 20 °C compared to 37 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050103
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  • 9
    Electronic Resource
    Electronic Resource
    New development strategies for high aspect ratio microstructures (1998)
    Springer
    Microsystem technologies 4 (1998), S. 94-97 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  In the first step of the LIGA process a resist layer, typically PMMA (polymethylmethacrylate), is pattered by deep X-ray lithography. The exposed parts are subsequently dissolved by an organic developer. The quality and the achievable height of the microstructure is decisively determined by the development process. In order to increase the aspect ratio and maintain the quality of the microstructures the parameters influencing the development process were investigated. In the case of dip development and ultrasound development a strong dependency of the development rate on the temperature, dose value and depth of deposition has been noticed. The development rate increases with increasing dose value and temperature and decreases with increasing depth of deposition. In case of dip development the development course can be described by a phenomenological equation which considers the three mentioned parameters. In the case of ultrasound further parameters have to be taken into account: the geometry and the dimensions of the strucutres.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050104
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  • 10
    Electronic Resource
    Electronic Resource
    Applications of full-field optical methods in micro-mechanics and material engineering (1998)
    Springer
    Microsystem technologies 5 (1998), S. 81-89 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Current trends in the development of micro-scale components, structures and systems place unprecedented requirements on their designers. To satisfy these demands, new experimental tools have to be employed along with the computational solutions. The biggest challenge includes the experimental knowledge of micromechanical behaviour of materials and to design validation of finished products. This information is provided by electronic holography and grating interferometry used as full-field, noninvasive experimental techniques. The usefulness of these methods are shown by several examples including the determination of local material properties of polycrystalline, composit and smart materials, as well as dynamic characteristic of structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050146
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  • 11
    Electronic Resource
    Electronic Resource
    Analytical modeling and optimization for a laterally-driven polysilicon thermal actuator (1999)
    Springer
    Microsystem technologies 5 (1999), S. 133-137 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  An electro-thermally and laterally driven microactuator is analytically examined which is based on the asymmetrical thermal expansion of the microstructure with different lengths of two beams. Deflection of the microactuator is modeled by the structural analysis. Analytical results are compared with the finite element model (FEM) results, and show a reasonable agreement. The magnitude of the deflection depends strongly on the geometry of the microactuator. The analytical model allows one to optimize efficiently the laterally driven thermal actuators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050152
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  • 12
    Electronic Resource
    Electronic Resource
    High-speed visualization, a powerful diagnostic tool for microactuators – retrospect and prospect (1999)
    Springer
    Microsystem technologies 5 (1999), S. 113-132 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  A comprehensive testing of microactuators is decisive (i) to prove the workability, (ii) to characterize the output parameters, (iii) to provide kinematic and temperature data for a revaluation of numerical modeling, (iv) to ensure the expected response with the macroscopic world, and (v) to study the mechanism of a premature failure. All this information helps to develop well-aimed strategies for improvements and promote the marketing process of new types of actuators. The most important diagnostic methods encompass high-speed photomicrography, laser interferometry and scanning laser Doppler velocimetry. High-speed thermography and flash microradiography have not yet been fully established for dynamic testing in the microscopic domain because of various technical limitations. The present state of the art of these methods is discussed and illustrated at various microactuator types. By the example of a microrelay it is shown that also material data can be derived from a motion analysis and that the relay operability can be improved by using methods of systems theory and control engineering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050151
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  • 13
    Electronic Resource
    Electronic Resource
    Fabrication of nanomechanical optical devices with aligned wafer bonding (1999)
    Springer
    Microsystem technologies 5 (1999), S. 138-143 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  This paper reports on a new method for making some types of integrated optical nanomechanical devices. Intensity modulators as well as phase modulators were fabricated using several silicon micromachining techniques, including chemical mechanical polishing and aligned wafer bonding. This new method enables batch fabrication of the nanomechanical optical devices, and enhances their performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050153
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  • 14
    Electronic Resource
    Electronic Resource
    Low-temperature anodic bonding of silicon to silicon wafers by means of intermediate glass layers (1999)
    Springer
    Microsystem technologies 5 (1999), S. 144-149 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract Silicon wafers have been anodically bonded to sputtered lithium borosilicate glass layers (Itb 1060) at temperatures as low as 150–180 °C and to sputtered Corning 7740 glass layers at 400 °C. Dependent on the thickness of the glass layer and the sputtering rate, the sputtered glass layers incorporate compressive stresses which cause the wafer to bow. As a result of this bowing, no anodic bond can be established especially along the edges of the silicon wafer. Successful anodic bonding not only requires plane surfaces, but also is determined very much by the alkali concentration in the glass layer. The concentration of alkali ions as measured by EDX and SNMS depends on both the sputtering rate and the oxygen fraction in the argon process gas. In Itb 1060 layers produced at a sputtering rate of 0.2 nm/s, and in Corning 7740 layers produced at sputtering rates of 0.03 and 0.5 nm/s, respectively, the concentration of alkali ions in the glass layers was sufficiently high, at oxygen partial pressures below 10-4 Pa, to achieve anodic bonding. High-frequency ultrasonic microanalysis allowed the bonding area to be examined non-destructively. Tensile strengths between 4 and 14 MPa were measured in subsequent destructive tensile tests of single-bonded specimens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050154
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  • 15
    Electronic Resource
    Electronic Resource
    Manufacture of diffraction grating on tiny parts by means of ultraprecision milling (1999)
    Springer
    Microsystem technologies 5 (1999), S. 157-160 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract The study deals with the manufacture of diffraction grating by applying the ultraprecision microgrooving technology. Microgrooving is performed by the use of a lathe-type ultraprecision milling machine having 1 nm positioning accuracy, together with a rotating diamond cutter. As an example of microgroove, a diffraction grating with 32 768 V-shaped grooves is fabricated in a pitch of 1 μm and a depth of 0.5 μm around the circumference of copper disk of 12 mm in diameter. The high-speed rotating cutter allows the microgrooves to be sharply machined without burrs and accumulative pitch errors, taking account of cutting order. The surface roughness of machined grooves is 1 nm (Ra), which experimentally shows good optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050156
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  • 16
    Electronic Resource
    Electronic Resource
    Role of the film texturing on the response of particle detectors based on CVD diamond (1999)
    Springer
    Microsystem technologies 5 (1999), S. 151-156 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Recent improvements in the quality of diamond films grown by Chemical Vapour Deposition (CVD) have made synthetic diamond a very attractive material for detection applications. In this paper, polycrystalline diamond films synthesised by microwave plasma enhanced CVD using a CH4–CO2 gas mixture, previously investigated as particle detectors, have been characterised by X-ray diffraction and Raman spectroscopy. The detector response was measured in vacuo under irradiation with 5.5 MeV α-particle from a 241Am source. A systematic study of the influence of the film structural properties on the detector performance has been carried out by changing the methane concentration in the growth plasma and the deposition temperature. The existence of a correlation between growth conditions, film texturing and detector performance has been demonstrated. Independently of the substrate temperature, (1 0 0) orientated films exhibit the lowest detection efficiencies. The meas ured collection distances are smaller than the average grain sizes and seem to be limited by trapping centres within the grains. These results are confirmed by Raman analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050155
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  • 17
    Electronic Resource
    Electronic Resource
    Electrostatic comb-drive actuators made of polyimide for actuating micromotion convert mechanisms (1999)
    Springer
    Microsystem technologies 5 (1999), S. 161-165 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  For conventional micromachines, in particular, micromotion convert mechanisms, the output points of the mechanism can move horizontally when input points move in the same direction. Therefore, we have proposed a three-dimensional motion convert mechanism whose output points can move vertically when the input points move in the horizontal direction. This 2-degree-of-freedom (DOF) mechanism consists of electrostatic comb-drive actuators and a basic mechanism with large-deflective elastic hinges. In this study, the characteristics of comb-drive actuators are analyzed. The electrostatic comb-drive actuator which is made up of polyimide is fabricated by CVD, RIE, Wet etching, etc., technologies. The relationship between the input (voltage) and the output (displacement) of the drive has been analyzed both theoretically and experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050157
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  • 18
    Electronic Resource
    Electronic Resource
    Multilayer polyimide film substrates for interconnections in microsystems (1999)
    Springer
    Microsystem technologies 5 (1999), S. 166-168 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Currently there is a great interest in flexible substrates for their use in the packaging of semiconductors. They allow high packaging density and permit mechanical motion of the components, if necessary. This paper describes a new substrate material which possesses a high flexibility and which can be used for the realization of interconnection cables and MCM-D. These substrates are not only highly flexible but also mechanically stable, chemically inert and can be produced with the same processes as those for rigid substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050158
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  • 19
    Electronic Resource
    Electronic Resource
    A study of the effect of the fabrication process on diffusion in a layered thin film (1999)
    Springer
    Microsystem technologies 5 (1999), S. 169-172 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  A diffusion layer that is likely to be formed at the interfaces of the multi-layered thin film would affect its overall mechanical properties; the thinner the thin film, the more significant would be the effect. We measure the distribution of atoms and estimate the thickness of the diffusion layer at the vicinity of the interfaces among thin films of Al and SiO2 and silicon wafer with the aid of Auger electron spectroscopy (AES). The effect of heat treatment after fabrication of the thin films on the diffusion is also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050159
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  • 20
    Electronic Resource
    Electronic Resource
    PbZr x Ti 1−x O3 hydrothermal synthesis on titanium substrate for actuators (1999)
    Springer
    Microsystem technologies 6 (1999), S. 15-18 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  This paper reports on a new single hydrothermal process for the deposition of PZT thin films on titanium substrates. The Zr/(Zr+Ti) ratio is adjusted by controlling the Ti and Zr ionic concentrations. The films are analysed by X-ray powder diffraction (XRD), and Scanning Electron Microscopy (SEM). A PZT film of 5 μm thickness (Zr=0.52, Ti=0.48) very interesting from the point of view of piezoelectric constants, was successfully obtained by the control of ions concentration in the solution. The XRD patterns show well-defined peaks corresponding to a well-crystallised PZT phase with the ratio Zr/(Zr+Ti)=0.52. This composition is called the morphotropic-phase boundary (MPB), which means the separation between the tetragonal and rhombohedral phases. SEM micrographs show microcrystalline thin films with homogenous thickness and distribution on the titanium substrate. The microcrystals are cubic. It is demonstrated that large vibration amplitudes can be excited with these films under low voltage supply (5 V).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050168
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  • 21
    Electronic Resource
    Electronic Resource
    Propagation of adhesives in joints during capillary adhesive bonding of microcomponents (1999)
    Springer
    Microsystem technologies 6 (1999), S. 19-22 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Capillary adhesive bonding is used successfully to integrate microsystems. To ensure high reliability and quality of the interconnection technique, it is imperative that the propagation of adhesives in the joints be controlled. Two adhesives frequently used in capillary adhesive bonding were examined: a one-component, UV-curing methacrylate adhesive (Dymax 191-M), and a two-component epoxy resin bonding adhesive curing at room temperature (Epo-tek 302-3M). The propagation of these adhesives in joints with different gap heights of 2–20 μm between two PMMA surfaces and between one PMMA and one PI surface was measured and compared with the theoretical adhesive propagation in accordance with the Hagen–Poiseuille equation for a gap flow, with the capillary pressure taken into account. Once the dynamic viscosity, the wetting angle and the surface tension of the adhesive have been determined as a function of the measuring time, the measured propagation of the Epo-tek 302-3M and Dymax 191-M adhesives can be described in good agreement with the theory for all the gap heights under study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050169
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  • 22
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    Raman characterisation and hardness properties of diamond-like carbon films grown by pulsed laser deposition technique (1999)
    Springer
    Microsystem technologies 6 (1999), S. 30-36 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  A detailed Raman analysis is carried out in order to explain the results of the systematic morphological and mechanical characterisation of unhydrogenated and hydrogenated amorphous carbon films prepared by the pulsed laser deposition at substrate temperatures ranging from 25 to 600°C. The carbon bonding modifications produced by the different deposition conditions are discussed via the quantitative analysis of the changes correspondingly induced into the shape of the Raman spectra. The indications coming from scanning electron microscopy, atomic force microscopy and hardness measurements are understood in terms of the different sp3- to sp2-bonding fraction attained and the role of both substrate temperature and growth ambient on the quality of the deposited films is clarified. The existence is demonstrated of a very narrow temperature window for the achievement of a high sp3-bond percentage in hydrogen-free films resulting in relevant hardness values and a correlation between mechanical strengths and shape of the Raman spectrum is tentatively established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050171
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  • 23
    Electronic Resource
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    Heteroepitaxial growth of Pt (0 0 1) films on SrTiO3 by pulsed laser deposition (1999)
    Springer
    Microsystem technologies 6 (1999), S. 37-39 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  New functional materials are being considered having in perspective an important role in the development of microsystems. In particular, in an experiment of pulsed laser deposition (equipped with in situ reflection high-energy diffraction of the growth surface) thin Pt epitaxial layers have been deposited on SrTiO3 (0 0 1) substrates. It is shown that thin single-crystal layers of metallic Pt (0 0 1) can be heteroepitaxially grown on SrTiO3 (0 0 1). Furthermore complex SrTiO3–Pt–SrTiO3 heteroepitaxial structures have been deposited. This result is of relevant importance for the growth of new functional materials consisting of heteroepitaxial structures involving both complex oxides and standard metals. These materials may reasonably open up new prospects in the field of microsystem technologies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050172
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  • 24
    Electronic Resource
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    Micro-optical elements and their integration to glass and optoelectronic wafers (1999)
    Springer
    Microsystem technologies 6 (1999), S. 41-47 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract Polymer replication technique enables for low cost devices even in the case of aspheric or irregular shaped surfaces, submicron or other challenging structures. The use of UV-reaction moulding on semiconductors, glass or other inorganic substrates as the replication technique leads to a high degree of stability and allows for the simultaneous integration of optoelectronics or ion exchanged GRIN elements. Thin polymer layers on inorganic substrates show high flatness and lower wavefront deviations with respect to all-polymer elements. They show low lateral shrinkage during the UV-polymerisation, and the lateral thermal expansion is determined by the substrate. Furthermore, sensitive substrates can be used because the process does not involve high mechanical stress or elevated temperatures. Original structures for the replication masters are fabricated by different resist technologies. Subsequently, they are proportionally transferred by dry etching (RIE) into glass or silicon, or, the resist structure is transformed into a metal master by electroplating. The utilisation of UV-transparent replication tools allows for the use of opaque substrates (i.e. detectors). Locally UV-transparent replication tools enable a combination of replication and resist technology (leading to elements with new features) or can protect sensitive areas like bond pads from being coated with optical layers. The fabrication of isolated polymer elements on arbitrary substrates is an advantage of UV-reaction moulding against injection moulding or hot embossing.
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    Miniaturized plastic micro plates for applications in HTS (1999)
    Springer
    Microsystem technologies 6 (1999), S. 48-53 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract This paper is focused on the development of plastic nano titer plates for applications in high throughput screening (HTS). For screening systems with integrated confocal microscopes plastic chips have been fabricated by injection molding and injection compression molding which contain micro wells with volumes of 0.9 μl and 1.4 μl and bottom plates with thicknesses of 120 μm and 200 μm. In addition, plastic chips with through holes have been joined with 160 μm glass plates by an adhesive printing process. First fluorescence correlation spectroscopy (FCS) measurements show that the plastic plates with glass bottoms are qualified as screening grade FCS nano titer plates.
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    URL: http://dx.doi.org/10.1007/s005420050174
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    Micromachined gas sensors for environmental pollutants (1999)
    Springer
    Microsystem technologies 6 (1999), S. 54-59 
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    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract An Au doped tin oxide thin film was deposited as base material for carbon monoxide detection over a micromachined substrate. The performances of a recent technique to heat the device, named fast pulsed temperature supply, are presented. This technique exploits the property that, due to the very low thermal mass of the membrane, the term required to reach steady state conditions is very short (about 40 ms). The sensor heater is periodically supplied for very short terms, hundred of milliseconds, and kept off for long ones, seconds or more. Besides a strong reduction of power consumption compared with isothermal characterization, an increase of sensitivity is observed. Different shapes of the heating wave were examined and results are summarized and compared.
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    Intrinsic photoconductivity in chromium disilicide epitaxial thin films (1997)
    Springer
    Semiconductors 31 (1997), S. 826-828 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on single-layer silicon substrates have been studied in the photon energy range 0.5–1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV corresponds to the third direct interband transition in chromium disilicide at 0.9–0.95 eV. Possible reasons for the weak photoconductivity signal in the region of the fundamental absorption edge are analyzed.
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    URL: http://dx.doi.org/10.1134/1.1187262
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    InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm (1997)
    Springer
    Semiconductors 31 (1997), S. 831-834 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval 3–4 µm, are investigated. The lasers attain a higher operating temperature when electrical confinement is created by means of type-II heterojunctions. Interface Auger recombination is suppressed in lasers of this type, and the experimental current density is close to the theoretically calculated value for the case of predominant volume Auger recombination at a temperature of 180–220 K.
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    Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power (1997)
    Springer
    Semiconductors 31 (1997), S. 844-846 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Conduction type inversion processes in Pb1−x SnxTe epitaxial films irradiated by a CO2 laser (λ=10.6µm) at subthreshold power is investigated. It is hypothesized that the stable inverted state is a result of the formation of neutral metal and chalcogen divacancies.
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    Nature of E c −0.37 eV centers and the formation of high-resistivity layers in n-type silicon (1997)
    Springer
    Semiconductors 31 (1997), S. 847-851 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The DLTS and Van der Pauw methods are used to investigate the production of E c −0.37 eV centers responsible for the formation of high-resistivity layers in n-type Si irradiated with electrons and annealed in the temperature range 80–320 °C. An analysis of the experimental data leads to a conclusion as to the composition of the E c −0.37 eV centers ([V-O-C]) and to the conclusion that their formation is stimulated by a flux of interstitial atoms away from the interface into the interior of the semiconductor during annealing accompanied by the reactions: 1) I+Cs→Ci,Ci+[V-O]→[V-O-C] (dominant reaction); 2) I+V 2→V,V+[C-O]→[V-O-C].
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    Injection currents in mixed-layer Ga0.5In1.5S3 single crystals (1997)
    Springer
    Semiconductors 31 (1997), S. 864-865 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Single crystals of Ga0.5In1.5S3 are prepared by chemical transport reaction, and the currentvoltage characteristics and temperature dependence of the electrical conductivity are investigated. It is shown that the current transmission mechanism in an In-Ga0.5In1.5S3-In structure is associated with monopolar injection.
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    URL: http://dx.doi.org/10.1134/1.1187271
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    Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals (1997)
    Springer
    Semiconductors 31 (1997), S. 866-868 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence centers and their conversion as a result of electron bombardment and annealing in CdS single crystals which were not specially doped and which were doped with copper have been investigated. The Cu atoms, which interact mainly with defects in the cadmium sublattice, form CuCd, which are responsible for luminescence at wavelengths λm=0.98−1.00 µm. At annealing temperatures above 50 °C, conversion of the defect complexes, which are responsible for the green (λm=0.514 µm), red (λm=0.72 µm), and infrared (λm=0.98 µm) luminescence, occurs as a result of an increase in the mobility of point defects in the cadmium and sulfur sublattices of CdS:Cu.
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    Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms (1997)
    Springer
    Semiconductors 31 (1997), S. 893-895 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It is shown that the introduction of copper atoms into gallium arsenide crystals containing EL2 antisite defects results in virtually complete vanishing of the EL2-induced luminescence bands with radiation maxima at hv m =0.63 and 0.68 eV. This occurs as a result of the deactivation of the EL2 defects as a result of their interaction with copper atoms, which account for the formation of electrically inactive EL2-Cu complexes.
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    Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals (1997)
    Springer
    Semiconductors 31 (1997), S. 875-878 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It is pointed out that the degradation of Si single crystals after heating is due primarily to structural transformations associated with a partial transformation of diamond-like Si into silicon with the structure of white tin. These transformations, which are observed at high pressures, occur as a result of the appearance of numerous zones of stress concentration due to the anisotropy of thermal expansion of differently oriented microvolumes of the crystal. The high pressures required for the indicated phase transition to occur can be reached in these zones. It is pointed out that the structural transformations leading to the degradation of the electrical properties of Si can be prevented by doping it with transition or rare-earth metals, which increase the interatomic interaction energy and, as a result, decrease the thermal expansion. The choice of dopant is made on the basis of calculations of the binding energy and charge density based on a system of unpolarized ionic radii.
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    Electronic structure of the Er-O6 complex in silicon (1997)
    Springer
    Semiconductors 31 (1997), S. 886-892 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The energy diagram of the Er-O6 complex in silicon is calculated. The square amplitudes of the wave functions of the complex on the erbium atom are determined. The results of our calculations show that the Er-O6 complex is an acceptor in silicon. In addition, it is possible that the electron trap energy level is located in the energy gap of silicon. On the whole, the results of our calculations correspond to the Er-O quantum dot model proposed previously.
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    Anomalous magnetic properties of the solid solutions (InSb)1−x (CdTe)x at low temperatures (1997)
    Springer
    Semiconductors 31 (1997), S. 899-900 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The magnetic susceptibility of the solid solutions (InSb)1−x (CdTe)x has been investigated. It has been established that for the composition x=0.05 a tenfold anomalous increase in diamagnetism is observed with decreasing temperature. This anomaly can be explained by the appearance of metallic superconducting modifications in the volume of the crystal.
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    The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons (1997)
    Springer
    Semiconductors 31 (1997), S. 916-917 
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    Notes: Abstract An approximate expression is derived for the momentum relaxation time in the quasielastic scattering of hot electrons by acoustic phonons as a function of the electron energy and the lattice temperature. The mobility and the dependence of the impurity breakdown electric field on the degree of compensation are calculated in the electron-temperature approximation. The results of the calculations are in good agreement with the experimental for n-type Ge.
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    Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC (1997)
    Springer
    Semiconductors 31 (1997), S. 926-928 
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    ISSN: 1063-7826
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    Notes: Abstract The parameters of the epitaxial structures {3C/6H}-SiC have been investigated. The heteroepitaxial growth was conducted by sublimation epitaxy in an open system. The presence of the 3C polytype was confirmed by x-ray investigations. The capacitance-voltage and current-voltage characteristics and the electroluminescence spectra of the p-n structures were investigated. It was found that a thin, slightly doped, defective p-6H-SiC layer was formed between p-3C-SiC and n-6H-SiC in the heteropolytypic structures; this layer detetmined the electrical properties of the diode structures.
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    Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures (1997)
    Springer
    Semiconductors 31 (1997), S. 921-925 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Analytical expressions for the electron wave functions, the low-signal, high-frequency conductance, and the widths of the energy levels (minibands) in a asymmetric double-barrier structure with thin barriers are obtained under conditions of coherent electron tunneling strictly along the centers of the energy levels and with the electron energies deviating from exact resonance. It is shown that an electron transmittance equal to 1 and a substantial increase in the integrated (taking into account the energy distribution of the electrons incident on the structure) rf conductance of the structure can be obtained by choosing the appropriate arrangement of the minibands of the structure relative to the conduction band bottom of the semiconductor materials to the left and right of the structure.
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    Properties of p-PbTe (Ga) based diode structures (1997)
    Springer
    Semiconductors 31 (1997), S. 1237-1240 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Single crystals of p-PbTe(Ga) with gallium density too low for complete compensation of uncontrollable impurities and intrinsic lattice defects and realization of Fermi level (FL) pinning were investigated for the purpose of producing diode structures In contact-[p-PbTe(Ga)]-Pt contact. It was found that the properties of the structures obtained have a number of features that distinguish them from In-[p-PbTe] Schottky barriers. The current-voltage characteristics (IVCs) of the experimental structures are not described by the standard relation of the Schottky theory not only in the region of reverse bias but also in the region of direct bias. Residual photoconductivity (PC) is observed under illumination with a thermal radiation source in the temperature range T〈80 K; after the illumination is switched off, the IVCs are linear. Under constant illumination a photo-emf appears and the branches of the IVCs in the region of reverse biases rectify. The experimental results are discussed on the basis of the assumption that regions with n-type conductivity form and FL stabilizes near the nonohmic contact as a result of band bending. It has not been ruled out that n-PbTe(Ga) regions are initially present in the sample, but they are not manifested under ohmic contact conditions.
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    Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures (1997)
    Springer
    Semiconductors 31 (1997), S. 1247-1251 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A theory of size-quantization of charge carriers in a small semiconductor crystal under conditions where the polarization interaction plays a large role is constructed. The charge-carrier spectrum in a small microcrystal and its dependence on the radius of the microcrystal, the charge-carrier effective mass, and the relative permittivity are investigated. It is shown that the appearance of local states is of a threshold nature depending on the size of the microcrystal.
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    Recombination in the space charge region and its effect on the transmittance of bipolar transistors (1997)
    Springer
    Semiconductors 31 (1997), S. 983-987 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract AbstractThe effect of recombination in the space charge region of the emitter junction on the transmittance of bipolar transistors is considered. Measurements of the transmittance of several commercial transistors at low injection levels essentially agree with theoretical values given by the expressions obtained here, which take into account deep levels and recombination through them.
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    Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon (1998)
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    Semiconductors 32 (1998), S. 15-18 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A model of diffusion-segregation impurity redistribution in the system SiO2-Si during the thermal oxidation of silicon is developed, taking into account the nonequilibrium character of the segregation process at the moving phase boundary. The temperature dependence of the mass transfer of phosphorus and its mass-transfer coefficient at the SiO2-Si interface are determined by the numerical analysis of experimental data.
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    Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te (1998)
    Springer
    Semiconductors 32 (1998), S. 31-32 
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    Notes: Abstract The influence of gg irradiation (60Co) of various intensities (P γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n 0=(1.2–2.3×1018 cm−3] is investigated. Together with the known photoluminescence impurity bands (hν max≈1.2 eV and/or hν max≈1.35 eV) and edge band (hν max≈1.51 eV), new bands are also observed in the spectra at hν max≈1.3 eV and hν max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers.
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    The history and future of semiconductor heterostructures (1998)
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    Semiconductors 32 (1998), S. 1-14 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The history of the development of semiconductor heterostructures and their applications in various electron devices is presented, along with a brief historical survey of the physics, production technology, and applications of quantum wells and superlattices. Advances in recent years in the fabrication of structures utilizing quantum wires and especially quantum dots are discussed. An outline of future trends and prospects for the development and application of these latest types of heterostructures is presented.
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    Effect of In doping on the kinetic coefficients in solid solutions of the system PbzSn1−z )0.95Ge0.05Te (1998)
    Springer
    Semiconductors 32 (1998), S. 1062-1064 
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    Notes: Abstract In the quaternary solid solutions (PbzSn1−z )0.95Ge0.05Te (z=0.35 and 0.40) the effect of addition of indium (in amounts of 5–20 at. %) on the temperature dependence of the electrical conductivity σ, Hall coefficient R, Seebeck coefficient S, and Hall mobility u is investigated on samples prepared using powder technology. We found a monotonic dependence of the hole density p on the indium content N In with a tendency toward saturation at a level p max≈3×1021 cm−3, an abrupt drop in the mobility in samples with p≈p max, and changes in the character of the temperature dependences R(T) and σ(T). We show that these peculiarities in the behavior of the kinetic coefficients can be interpreted in terms of quasilocal indium impurity states against the background of the valence band spectrum (with energy ɛ In∼0.3 eV) and resonance hole scattering into these states.
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    Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation (1998)
    Springer
    Semiconductors 32 (1998), S. 33-39 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Experimental values of the polarization of the low-temperature luminescence from the V GaSnGa and V GaSiGa complexes in n-GaAs under conditions of resonant excitation by polarized light propagating along the [110] or [100] crystal axis are compared with expressions obtained in the classical dipole approximation for defects with triclinic or monoclinic symmetry. It is shown that the rotator fraction in the superposition of rotator and oscillator contributions to the emission of the complexes is 17–18%. The direction of the axis of these dipoles, which matches the experimental data, is consistent with the assumption that the effect of the donor on the vacancy orbitals of a hole localized in the complex is lower than that of the Jahn-Teller effect. The resulting symmetry of the complex may be monoclinic or triclinic. In either case, deviation of the optical dipole axis of the complex from the dipole axis of an isolated V Ga vacancy distorted as a result of the Jahn-Teller effect is lower for the V GaSnGa and V GaSiGa complexes than for V GaTeAs complexes. This means that the effect of the donor on the electron structure of the V GaTeAs complexes is greater than in the V GaSnGa and V GaSiGa complexes. This correlates with the difference in the donor position in these complexes.
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    Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1−x MnxTe1−y Sey (1998)
    Springer
    Semiconductors 32 (1998), S. 49-51 
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    Notes: Abstract The galvanomagnetic properties of single crystals of the diluted magnetic semiconductor Hg1−x MnxTe1−y Sey (0.01〈y〈0.1) with x=0.05 and 0.14 have been investigated in the temperature range 4.2–300 K. Peculiarities of the temperature dependence of the Hall coefficient R H and its complicated behavior in a magnetic field are quantitatively explained by the existence of three groups of current carriers: electrons and two types of holes with different mobilities for which the temperature dependence of concentration and mobility was obtained. A transition from p-type to n-type conductivity was observed with increase of Se content, alongside with a simultaneous change of sign of the magnetoresistance from negative to positive.
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    Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures (1998)
    Springer
    Semiconductors 32 (1998), S. 54-57 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence spectra of InGaN/AlGaN/GaN p-n heterostructures with reverse bias sufficient for impact ionization are investigated. The injection luminescence of light-emitting diodes with such structures was examined earlier. A strong electric field is present in the InGaN active layer of the heterostructures, and for small reverse bias the tunneling component of the current predominates. Avalanche breakdown commences at voltages V th〉8–10 V, i.e., ∼3E g , (E g is the width of the band gap) in the absence of lightly doped structures. The luminescence spectra have a short-wavelength edge corresponding to the width of the GaN band gap (3.40 eV) and maxima in the region 2.60–2.80 eV corresponding to the maxima of the injection luminescence spectra in the active layer. The long-wavelength edge of the spectra in the region 1.7–1.8 eV may be associated with deep recombination levels. Mechanisms of recombination of the hot electron-hole plasma in the strong electric fields of the p-n heterostructures are discussed.
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    Long-term structural relaxation and photoinduced degradation in a-Si: H (1998)
    Springer
    Semiconductors 32 (1998), S. 1128-1130 
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    ISSN: 1063-7826
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of heating-illumination cycling on the electrical properties of a-Si: H fabricated in a glow discharge was investigated. Comparison of experimental and theoretical results shows that photostimulated degradation of a-Si: H (the Staebler-Wronski effect) may occur due to long-term degradation of structural defects generated by preliminary heating.
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    Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures (1998)
    Springer
    Semiconductors 32 (1998), S. 1134-1136 
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    Notes: Abstract The results of an experimental study of dark-conductivity kinetics in a-Si:H after short-term and long-term illumination, are presented. The films were deposited at temperatures in the range T s=300–390 °C. Data on relaxation of the photoinduced metastable states were found to correlate with the Fermi-level position.
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    Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers (1998)
    Springer
    Semiconductors 32 (1998), S. 1137-1140 
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    Notes: Abstract High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
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    The magnetoplasma effect in single crystals of antimony at T⩾80 K (1998)
    Springer
    Semiconductors 32 (1998), S. 1173-1174 
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    Notes: Abstract Transmission spectra of infrared laser radiation (λ=10.6 µm) passed through samples consisting of two symmetric halves of an antimony single crystal separated by a small gap are investigated in pulsed magnetic fields B⩽20 T at temperatures T⩾80 K. The magnetoplasma effect was observed for the magnetic induction B≈15 T, with change in the transmission close to 100%. The magnetoplasma relaxation time has been determined. The possibility of using such objects as IR optical valves with response time not worse than 10−4 s is demonstrated.
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    Formation of Se2 quasimolecules in selenium-doped silicon (1998)
    Springer
    Semiconductors 32 (1998), S. 1162-1167 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The kinetics of the formation of impurity complexes associated with selenium is investigated. The stationary density of complexes is obtained as a function of temperature and the density of selenium atoms that occupy silicon lattice sites. It is established that in the process of interconversions of electrically active complexes in the temperature range 670–1000 °C the total number of atoms participating in complex-forming reactions remains unchanged at any point of the spatial distribution of the impurity. The kinetics of accumulation of centers with ionization energy 0.2 eV is satisfactorily described by a scheme of quasichemical reactions leading to the formation and decomposition of Se2 quasimolecules. In the ideal, strongly dilute solution approximation the binding energy of a Se2 quasimolecule is 1.35 eV.
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    Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers (1998)
    Springer
    Semiconductors 32 (1998), S. 1175-1178 
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    Notes: Abstract Photoluminescence (PL) spectra of GaAs (100), (111)A and (111)B layers grown by molecular-beam epitaxy at different ratios of the partial pressures $${{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma $$ are investigated. Depending on the crystal orientation and γ values, either two PL bands (B-Si bands) or a single PL B-band are observed. The B-band corresponds to band-to-band radiative recombination (e→h) and the Si band is attributed to optical transitions between the conduction band and the Si acceptor states (e→A). The observed variations of the PL spectra and of the type and magnitude of the electrical conductivity as functions of the orientation and γ value are interpreted in terms of changes in the Si-acceptor concentration and their energy spectrum as well as a change in the ratio of the concentrations of the Si donor and acceptor states. These results are explained in the framework of the kinetic approach based on the multiplicity (energy) of the dangling chemical bonds on the different surfaces, with the influence of the molecular flux densities taken into account.
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    Differential methods for determination of deep-level parameters from recombination currents of p-n junctions (1998)
    Springer
    Semiconductors 32 (1998), S. 1065-1068 
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    Notes: Abstract Two techniques for determining the activation energies of centers that create deep levels in the space-charge region (SCR) of p-n junctions are developed on the basis of the Shockley-Read-Hall recombination model. The proposed techniques are based on a consideration of recombination currents in the SCR for a low injection level. The first technique involves a differential analysis of the reduced recombination rate ∂R np(U)/∂U and the second technique involves an analysis of the dependence R np 2 (U)/exp(qU/2kT). These techniques are used to analyze the current-voltage characteristics of gold-doped silicon p +-n diodes. The gold-related deep center activation energies obtained from the current-voltage characteristics are in good agreement with the available data in the literature.
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    Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors (1998)
    Springer
    Semiconductors 32 (1998), S. 1072-1074 
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    Notes: Abstract It is shown that for high single-photon excitation intensities the nonuniform distribution of the nonequilibrium carriers with depth strongly influences the ratio of intensities of different bands and can lead to almost complete suppression of the bands of an electron-hole plasma in the edge emission spectra of crystals. The spreading length of the nonequilibrium electronhole plasma is estimated.
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    Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy (1998)
    Springer
    Semiconductors 32 (1998), S. 1119-1124 
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    Notes: Abstract This paper investigates the linear polarization of photoluminescence emitted along the plane of an InAs/Ga(In)As wafer. The polarization was observed to depend on the asymmetry of the quantum-well shape, quantum-dot formation, and the presence of inclusions in the bulk alloy.
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    Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes (1998)
    Springer
    Semiconductors 32 (1998), S. 1242-1247 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A systematic investigation of the influence of internal mechanical stresses on the characteristics of gallium arsenide light-emitting diodes (LED’s) is performed. The LED structures are grown by liquid-phase epitaxy from a confined volume of a melt based on a solution of GaAs in Ga. The melt is doped with silicon or with silicon and tin. It is shown that the magnitude and sign of the internal mechanical stresses in the epitaxial layer are determined by the impurity concentration in the melt. The LED’s fabricated from epitaxial structures with the smallest internal mechanical stresses have the greatest quantum efficiency and the slowest rate of degradation of their parameters. A model of the reorganization of the defect structure of gallium arsenide, which describes the observed phenomena, is proposed.
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    Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon (1998)
    Springer
    Semiconductors 32 (1998), S. 1261-1265 
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    Notes: Abstract The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiOx precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered.
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    Experimental study of the transverse Ettingshausen-Nernst effect and thermoelectric power in the presence of a large temperature gradient (1998)
    Springer
    Semiconductors 32 (1998), S. 1168-1169 
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    Notes: Abstract The transverse Ettingshausen-Nernst effect and the thermoelectric power of compensated germanium with electron density n=2×1011 cm−3 are investigated as a function of the temperature gradient in the range 2−1.5×103 K·cm−1 at average temperature 350 K. It is shown that the mechanism of charge-carrier scattering does not depend on the temperature gradient, while the Benedick thermoelectric power is due to heating of the current carriers by the heat field.
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    Effect of laser-induced defects on luminescence in InP crystals (1998)
    Springer
    Semiconductors 32 (1998), S. 1187-1189 
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    Notes: Abstract Experimental data on luminescence in laser-modified InP crystals are compared with the theory of radiative recombination of heavily doped, compensated semiconductors. It is established that the band with maximum at 1.35 eV observed at 77 K is due to radiative transitions through the tails of the density of states which are formed as a result of the random distribution of defects and impurities showing up after laser treatment. The effective depth of the tails of the density of states is estimated to be equal to 67 meV.
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    Nature of the donor action of Gd impurity in crystals of lead and tin telluride (1998)
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    Semiconductors 32 (1998), S. 1185-1186 
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    Notes: Abstract Electron spin resonance and the Hall effect are investigated in n-Pb1−x SnxTe:Gd crystals grown from melt. It is found that there is no direct correlation between the free electron density and the density of the Gd3+ impurity in these crystals. The conclusion is drawn that the the electron conductivity of Pb1−x SnxTe:Gd crystals is not caused by the Gd impurity but by intrinsic defects of the crystal lattice which have zero activation energy due to the Gd impurities.
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    Study of the dynamical characteristics of an insulator-semiconductor interface (1998)
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    Semiconductors 32 (1998), S. 1190-1195 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A study of charge relaxation processes in metal-insulator-semiconductor structures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator has been performed using the deep-level transient spectroscopy (DLTS) method in combination with a study of nonlinear oscillations in the metal-insulator-semiconductor structure connected to an external inductive circuit. On the basis of the DLTS results and the variation with temperature of the configuration of the period multiplicity regions of the controlling parameters (the amplitude and frequency of the applied voltage) it is shown that the generation of nonlinear oscillations in a metal-insulator-semiconductor structure is governed by the properties of the insulator-semiconductor interface, in particular, the density of surface states and the capture cross sections.
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    Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra (1998)
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    Semiconductors 32 (1998), S. 1214-1221 
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    Notes: Abstract Time-dependent characteristics of electron resonant tunneling in quantum heterostructures based on GaAs and AlAs are investigated using the two-valley model. Analysis of the phases of the transmitted and reflected waves yields analytic expressions for tunneling and reflection times. The solution to the problem incorporates the decay of Γ-and X-valley resonant states in these heterostructures. Numerical solution of the nonstationary Schrödinger equation is used to demonstrate the tunneling of wave packets through double-barrier heterostructures.
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    Breakdown electroluminescence spectra of silicon carbide p-n junctions (1997)
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    Semiconductors 31 (1997), S. 169-172 
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    Notes: Abstract The breakdown electroluminescence spectra of p-n junctions with uniform and microplasma breakdown, which were prepared on SiC-3C crystals, have been investigated. A distinct periodic structure of an oscillatory nature with oscillation periods of 0.1–0.5 eV was observed in the room-temperature emission spectra of individual microplasmas. The amplitude of the bands increases with the period, and at maximum period it exceeds the amplitude of the background radiation. A similar structure was also observed in the spectra of individual microplasmas on SiC-6H. It is assumed that the structure is due to the action of a strong electric field in the region of radiation formation.
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    The dominant mechanisms of charge-carrier scattering in lead telluride (1997)
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    Semiconductors 31 (1997), S. 173-176 
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    Notes: Abstract The present status of the dominant mechanisms of charge-carrier scattering in lead telluride is analyzed critically. It is shown that the role of the Coulomb potential of the vacancies and the role of the deformation potential of acoustic phonons in carrier scattering in PbTe has been strongly overestimated in most existing studies. Futhermore, the role of optical phonons at high temperatures has been unjustifiably reduced to a polar component only. It is shown that, in addition to this mechanism, the deformation potential due to optical phonons, whose greatest contribution is at high carrier densities, also plays an important role in carrier scattering processes at temperatures in the range of room temperature.
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    Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide (1997)
    Springer
    Semiconductors 31 (1997), S. 177-180 
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    Notes: Abstract Relaxation processes stimulated in layers of the solid solutions CdTexS1−x (x〈0.2) by a change in an external electric field, temperature, and illumination have been studied. Polarization effects and maxima of the inversion current of photostimulated and thermally stimulated polarization were found. It is shown that all characteristic features of the relaxation processes can be explained in a quasidipole model, and the inversion maxima of the current can be interpreted as being due to a photostimulated and thermally stimulated order-disorder transition.
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    Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy (1997)
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    Semiconductors 31 (1997), S. 181-185 
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    Notes: Abstract It is shown using Mössbauer spectroscopy on the isotope 119Sn that an isovalent tin impurity in the solid solutions PbS1−z Se z is a two-electron donor with negative correlation energy. The energy levels associated with the tin impurity are found in the lower half of the band gap for z〈0.7 and are found among the allowed states of the valence band for z〉0.7. We have demonstrated electron transfer between neutral and ionized tin centers. The activation energy E o of this process decreases monotonically as z is increased, which reflects the fact that the tin energy levels move toward the top of the valence band, and for z〉0.7 the activation energy is E o =U/2, where U is the Hubbard energy.
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    Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures (1997)
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    Semiconductors 31 (1997), S. 186-188 
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    Notes: Abstract The thermal stability and luminescence properties of ZnCdSe/ZnSe quantum-well structures grown by molecular-beam epitaxy are investigated. A comparative analysis is made of the photoluminescence spectra of the structures before and after annealing. In the sample spectra after annealing (at 500 °C) a decrease in the intensity of the exciton luminescence line by more than two orders of magnitude, accompanied by an increase in the intensity of the deep levels, is observed. As a result of annealing at a lower temperature (about 400 °C), a narrowing of the exciton luminescence, accompanied by a shift of the maximum toward longer wavelengths, was detected.
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    Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing (1997)
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    Semiconductors 31 (1997), S. 189-193 
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    Notes: Abstract Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.
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    Photosensitivity of InP/CdS heterostructures in linearly polarized light (1997)
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    Semiconductors 31 (1997), S. 194-196 
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    Notes: Abstract Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.
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    Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation (1998)
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    Semiconductors 32 (1998), S. 120-122 
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    Notes: Abstract An investigation of the influence of germanium doping (⩽1 at. %) on the formation efficiency of the main secondary radiation defects in silicon under low-temperature (T⩽90 K) electron irradiation has been carried out. The significant decrease of the formation efficiency of A and V 2 centers in Si〈Ge〉 is explained by assuming that the germanium atoms are indirect recombination centers of primary radiation defects (V and I) in Si〈Ge〉.
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    Semiconductors-97: Third Russian conference on semiconductor physics (1997)
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    Semiconductors 31 (1997), S. 204-205 
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    Photoluminescence of anodized layers of CdSiAs2 (1997)
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    Semiconductors 31 (1997), S. 200-201 
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    Notes: Abstract CdSiAs2 belongs to the II-IV-V2 group of chalcopyrite semiconductors with a direct band gap of 1.51 eV at T=300 K. In this paper we investigate the spectral dependence of the steady-state photoluminescence of CdSiAs2 anodized layers. These layers were fabricated by electrochemical anodization of unoriented p-type CdSiAs2 wafers in an solution of HF in ethanol. It is found that a broad photoluminescence band with a maximum at the photon energy ℏω=1.82 eV at 300 K arises. This band lies deep in the fundamental absorption region of CdSiAs2 crystals. The dependence of the parameters of the photoluminescence spectra of anodized Si, GaAs, and CdSiAs2 layers is discussed.
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    Photoluminescence of anodized silicon carbide (1997)
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    Semiconductors 31 (1997), S. 202-203 
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    Notes: Abstract The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.
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    Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields (1997)
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    Semiconductors 31 (1997), S. 207-213 
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    Notes: Abstract A new theoretical model is proposed for describing the behavior of hydrogen when electrons are injected from contacts in thin-film SiO2 in strong fields. Hot electrons dislodge hydrogen from dangling SiO_ and Si_ bonds, creating traps for electrons and holes. Computations have been carried out for hydrogen redistribution and charge accumulation in SiO2. The experimental data of D.A. Buchanan et al. [J. Appl. Phys. 76, 3595 (1994)] are used to determine the hydrogen-formation reaction cross section σ H⋍6×10−20 cm2 and the hydrogen-photogeneration frequency ν ph=2×10−6 sec−1. An explanation is given for the accumulation of an anomalous positive charge in the SiO2 film.
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    Effect of electron irradiation on the electrical properties of n-type Pb1−x SnxTe (x⋍2) alloys (1997)
    Springer
    Semiconductors 31 (1997), S. 214-217 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of electron bombardment (T in⋍300 K, E=6 MeV, Φ⩽4×1017 cm−2) on the electrical properties of n-type Pb1−x SnxTe has been studied. Electron bombardment decreases the electron concentration and produces conductivity-type n-p conversion. The difference rate of the donor-and acceptor-type defect generation as a result of bombardment has been determined. Anomalies are detected in the temperature and magnetic-field dependences of the electrical parameters of the bombardment samples. These anomalies are associated with the appearance of a hole-enriched surface layer as a result of electron bombardment.
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    URL: http://dx.doi.org/10.1134/1.1187114
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    Transport phenomena in n-MnxHg1−x Te/Cd0.96Zn0.04Te epitaxial films (1997)
    Springer
    Semiconductors 31 (1997), S. 218-221 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of an experimental study of samples of MnxHg1−x Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E g (T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility. It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the virtual-crystal approximation, can produce large errors when determining E g (T) in a specific semiconductor.
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    Tin telluride based thermoelectrical alloys (1998)
    Springer
    Semiconductors 32 (1998), S. 241-244 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect on the Hall hole concentration and the thermoelectric coefficient of various elemental impurities in SnTe containing excess Te and in some solid solutions based on it is investigated in the temperature interval 300–900 K. The variation of the kinetic parameters is treated on the basis of the concept of resonance states bound to cation vacancies and to the impurities determining the hole concentration. The low values of the thermoelectric coefficient in SnTe is explained by selectivity of scattering of charge carriers with more probable transition of the holes to the resonance states and vice versa. In isomorphic solid solutions based on SnTe, because of a shift in the energy position of the resonance states relative to the band edges and the Fermi level, it is possible to alter the nature of the resonance scattering and raise the thermoelectric coefficient to values which are optimal from the standpoint of obtaining maximum thermoelectric efficiency. In solid solutions of chalcogenides of group-IV elements with SnTe content about 40 mol% of the dimensionless parameter of thermoelectric efficiency ZT=1 at temperatures above 700 K.
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    Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity (1998)
    Springer
    Semiconductors 32 (1998), S. 263-266 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of radiation defects on the field and temperature dependences of the magnetic susceptibility of single-crystal Si was studied. A nonlinear magnetic-field-dependence of the magnetic susceptibility of irradiated Si was observed. This behavior can be explained by magnetic ordering of A centers. It was concluded that clusters of these centers with a local density of the order of 1021 cm−3 exist. An explanation of the “diffusion paradox” in the formation of oxygen-containing thermal donors was proposed on the basis of micrononuniformities of the spatial distribution of thermal donors and interstitial oxygen in Si.
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    Optical properties of crystals of the solid solutions (InSb)1−x (CdTe)x (1998)
    Springer
    Semiconductors 32 (1998), S. 274-276 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The reflection and absorption spectra of crystals of the solid solutions (InSb)1−x (CdTe)x in the wavelength interval 2.5–25 µm were measured within the limits of solubility of CdTe in InSb (x⩽0.05) at room temperature. Analysis of the experimental results confirmed the applicability of the Kane theory for all compositions investigated. The variation of the optical band gap ɛ g opt and the effective mass m c at the Fermi level as a function of composition was determined. It is shown that the minimum values m c=0.8×10−2 m 0 and ɛ g opt =0.07 eV are reached for x=0.02–0.03. Information about the predominant mechanism of scattering for each alloy is obtained from the absorption curves in the region of absorption by free charge carriers. X-Ray crystallographic investigations were performed and the change Δa(x) in the lattice constant of the solid solutions relative to pure InSb was determined. It is shown that the behavior of m c(x) and ɛ g opt is uniquely determined by Δa(x). In turn, Δa(x) is determined by the complicated character of the interaction of the dopants with one another and with the InSb lattice.
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  • 83
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    Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region (1998)
    Springer
    Semiconductors 32 (1998), S. 280-283 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Data on the electrical conductivity, the thermoelectric power, and the Hall and Nernst-Ettingshausen effects in the temperature range from 77 to 400 K for the a solid solution PbTe-SnTe with a high In content (3 at. %) and additional doping with chlorine and thallium are presented. Specifically, the Nernst-Ettingshausen coefficient exhibits properties which are unusual for IV–VI semiconductors: It is positive and decreases rapidly with increasing temperature. The experimental data are discussed on the basis of a model in which the main transport mechanism is hopping conduction along strongly localized electronic states of the In impurity. Conduction along delocalized states of the conduction band makes a substantial contribution to the effects observed in a transverse magnetic field. The model gives satisfactory agreement with experiment, including the sign, magnitude, and temperature dependence of the Nernst-Ettingshausen coefficient.
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    Local neutrality and pinning of the chemical potential in III–V solid solutions: Interfaces and radiation effects (1998)
    Springer
    Semiconductors 32 (1998), S. 284-287 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In the virtual crystal approximation the mole fraction (X) of the local neutrality level E lnl: E lnl(X)ABC = XE lnl AC + (1 - X) E lnl BC - C ABC X(1 - X has been calculated in ABC solid solutions for 18 pairs of III–V semiconductors. An interpolation formula is proposed for the nonlinear coefficient C ABC (in eV): C ABC= - 0.03 + 0.04|Δa| + 1.4|Δa|2 as a function of the lattice mismatch |Δa| (in Å) for boundary compositions of the solid solutions. It is shown that the numerical values of E lnl obtained provide good agreement with the experimental values of the heights of the Schottky barriers (F bS) and the limiting Fermi level positions (F lim) in irradiated III–V solid solutions.
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    Effect of ion irradiation of amorphous-silicon films on their crystallization (1998)
    Springer
    Semiconductors 32 (1998), S. 316-319 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The change in the structure of amorphous Si films implanted with inert-gas ions and chemically active impurity was investigated by transmission electron microscopy and electron diffraction methods. It was shown that as a result of radiation-induced formation of thermally stable vacancy complexes, Si films irradiated with Ar+ and P+ ions with doses above 7×1015 cm−2 do not crystallize up to temperature 680 °C. It was established that crystallization of Si films after implantation of lower doses of P+ ions accelerates the growth of grains in the films as a compared with the unirradiated films. A model of the mechanism by which the ion irradiation influences the crystallization of Si films is discussed.
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    Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination (1998)
    Springer
    Semiconductors 32 (1998), S. 332-334 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract InGaAsP/InP laser heterostructures in the continuous pumping regime were investigated by autocorrelation methods. It was shown that below and above the lasing threshold the laser radiation consists of ultrashort coherent pulses and the temporal coherence of these pulses was measured. The dependence of the pulse duration on the pump current was also investigated. The results obtained can be interpreted in terms of collective resonances in the process of radiative recombination. To explain the observed effects the carrier lifetime was treated as a combination of the accumulation time and the collective emission time.
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    Quantum dot heterostructures: Fabrication, properties, lasers (Review) (1998)
    Springer
    Semiconductors 32 (1998), S. 343-365 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In the present review we summarize original results where 1) we have experimentally discovered a novel class of spontaneously ordered nanostructures, namely equilibrium arrays of threedimensional, coherently strained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxial systems; 3) we have experimentally demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of the optical properties of quantum dots; 4) we have fabricated quantum dot-based injection lasers demonstrating unique charactristics, namely high-temperature stability of the threshold current and ultra-high material gain.
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    Optical absorption and photosensitivity of CuInxGa1-x Se2 thin film structures (1998)
    Springer
    Semiconductors 32 (1998), S. 385-388 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin polycrystalline films of CuInxGa1−x Se2 (0⩽x⩽1) were fabricated by pulsed laser evaporation. Results of measurements of the optical properties, photocurrent polarization indicatrices, and spectral dependence of the photoconversion quantum yield of In-p-CuInxGa1−x Se2 structures are discussed. A window effect in the photosensitivity has been observed, and it is concluded that it is possible to use CuInxGa1−x Se2 thin films as photoconverters of solar radiation.
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    Thermoelectric figure of merit of monopolar semiconductors with finite dimensions (1997)
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    Semiconductors 31 (1997), S. 265-267 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The figure of merit of monopolar nondegenerate semiconductors is theoretically investigated. The difference between the electron and phonon temperatures, which arises as a result of the action of different surface mechanisms of energy relaxation at the contacts of the sample with the heat reservoir, is taken into account. It is shown in the case of isothermal boundary conditions for the electron subsystem and adiabatic conditions for the phonon subsystem that the thermoelectric figure of merit of the sample increases with decreasing sample’s linear dimensions and reaches its maximum in films of submicron thickness.
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    Galvanomagnetic phenomena in p-Hg1−x MnxTe solid solutions (1997)
    Springer
    Semiconductors 31 (1997), S. 268-270 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Galvanomagnetic effects in homogeneous samples of p-Hg1−x MnxTe solid solutions were investigated in stationary and pulsed magnetic fields up to 200 kOe in the temperature range 1.8–300 K. The magnetopolar origin of the anomalous dependence of the Hall coefficient on the magnetic field at liquid-helium temperatures is confirmed. The shift in the inversion point of the Hall coefficient agrees with the model of the bound magnetic polaron. Freezing of holes to acceptor levels in high magnetic fields was observed for all samples.
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    Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure (1997)
    Springer
    Semiconductors 31 (1997), S. 276-278 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thermoelectric power measurements have been carried out for the narrow-band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with the data obtained by oscillation methods. These correlations allow one to use the thermoelectric power to search for topological electronic transitions in semiconductors.
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    Lattice vibrations in CuInSe2 crystals (1997)
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    Semiconductors 31 (1997), S. 271-275 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Infrared reflection spectra of CuInSe2 crystals are investigated for the polarizations E∥c and E⊥c. Contours of the reflection spectra are calculated and phonon parameters and dielectric constants are determined. The effective charges of the Cu, In, and Se ions in these materials are determined. The two-phonon absorption spectra in CuInSe2 are investigated and the absorption bands are identified from the selection rules.
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    Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs (1998)
    Springer
    Semiconductors 32 (1998), S. 479-483 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Pumping a thin layer of GaAs with a high-power picosecond optical pulse leads to nonstationary edge emission. Experimental data are obtained for the way the time-integrated power spectrum of this emission varies with beam diameter and energy of the optical pump pulse. These data are sufficient to confirm the stimulated nature of the emission, whose duration is in the picosecond time range.
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    Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te (1997)
    Springer
    Semiconductors 31 (1997), S. 283-286 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Available experimental data on the composition and conditions for crystallization of semiconductor Hg1−z MnzTe solid-state solutions epitaxially grown on Cd(Zn)Te substrates reveal a number of peculiarities, which indicate that the substrate strongly affects the character of crystallization of the solid phase. In this paper we discuss data on liquid-phase epitaxy of Hg1−z MnzTe which suggest the possibility that elastic stresses caused by the mismatch between the crystal lattice parameters of the substrate and the epitaxial layer can influence the composition and conditions for crystallization of these layers. An important tool in our investigation is a thermodynamic analysis of the metastable equilibrium between the stressed solid phase and the supersaturated solution of components.
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    Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films (1998)
    Springer
    Semiconductors 32 (1998), S. 491-494 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Changes have been observed and investigated in the electrooptic properties of ZnS: Mn films used in thin-film electroluminescent structures as a result of irradiation by ultraviolet pulses with energies per pulse much smaller than the threshold energy of laser annealing. It is found that in disordered ZnS: Mn films processes of defect generation are important even for below-threshold energies of the ultraviolet radiation pulses, and can facilitate the effective diffusion and activation of Mn atoms in the ZnS lattice. It is shown that short-time ultraviolet processing of thin-film electroluminescent structures improves their characteristics and, by making the preparation technology simpler and cheaper, allows structures with detector characteristics to be fabricated on low melting-point substrates.
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    Hopping-induced energy relaxation with allowance for all possible versions of intercenter transitions (1998)
    Springer
    Semiconductors 32 (1998), S. 504-508 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Hopping relaxation of localized excitons is discussed within a model that avoids the approximation of treating hopping to nearest-neighbor centers only, thereby lifting the model-imposed restriction on the largest concentration of localized states that can be treated. The general results are illustrated by an example in which the line shape of low-temperature exciton luminescence in the tail of localized states is calculated.
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    Mechanism of anodic electroluminescence of porous silicon in electrolytes (1998)
    Springer
    Semiconductors 32 (1998), S. 529-532 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A mechanism of charge-carrier transfer from an electrolyte into porous silicon, which explains the efficient anodic electroluminescence of porous silicon, is proposed and analyzed in detail. It is shown that when a current flows through the interface, electrically active particles accumulate in the electrolyte — atomic hydrogen and oxygen, which with respect to porous silicon are efficient electron donors and acceptors. Visible-range electroluminescence arises as a result of bipolar electron and hole injection from the electrolyte into high-resistance quantum-well crystallites of porous silicon. It is shown that the overall mechanism is the same for anodic and cathodic electroluminescence. This explains the well-known similarity of these two processes. The detailed physicochemical processes, which are the basis for anodic luminescence, are explained.
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    Luminescence of porous silicon in the infrared spectral region at room temperature (1997)
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    Semiconductors 31 (1997), S. 304-307 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A method for preparing mesoporous silicon on n-type substrates has been developed. The material exhibits two intense bands of photo-and electroluminescence at room temperature: a primary one in the range 1.4–1.8 eV, and a low-energy infrared band near 1–1.2 eV. It is shown that the position of the primary emission maximum and the intensity of the band can be controlled. The properties of the primary band are explained in terms of a quantumsize model for formation of porous silicon, while the low-energy band is explained as radiative recombination in larger non-quantum-size crystallites.
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    Recombination mechanisms in doped n-type Hg1−x CdxTe crystals and properties of diffusion p +-n junctions based on them (1997)
    Springer
    Semiconductors 31 (1997), S. 290-293 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We made p +-n-type photodiodes for the 3–5 and 8–12 µm wavelength regions by diffusing As into single-crystal n-Hg1−x CdxTe substrates, and investigated their electrical and photoelectric properties. Analysis of the temperature dependences of the differential resistance and current-voltage characteristics led us to conclude that charge-carrier transport is predominately due to the generation-recombination mechanism at a temperature of 77 K. As the temperature increases, a contribution from the diffusion component also appears. We obtained values of the product R 0 A≅0.3–1.0, 1–10, and (1–10)×104 Ω · cm2 for diodes with long-wavelength photosensitivity cutoffs λc≅11.5, 10.5, and 6.0 µm, respectively, indicating that they could operate in the regime where performance is limited by background radiation fluctuations.
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    Luminescence of copper-aluminum diselenide (1997)
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    Semiconductors 31 (1997), S. 315-318 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of a multifaceted investigation of the luminescence properties of single crystals of copper-aluminum diselenide CuAlSe2 are presented. The luminescence spectrum of undoped single crystals of this compound with homogeneous composition was found to have a complex structure. The luminescence properties were modified by annealing the compound in various atmospheres. The nature of the radiative transitions in this semiconductor was analyzed.
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