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  • Articles  (57)
  • 61.70  (39)
  • 85.30  (21)
  • 2020-2024
  • 1985-1989  (57)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (57)
  • Political Science
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  • Articles  (57)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (57)
  • Political Science
  • Physics  (61)
  • 1
    Electronic Resource
    Electronic Resource
    Double anion antisite in GaAs - the simplest member of EL2 family? (1985)
    Springer
    Applied physics 38 (1985), S. 253-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties of an aggregate composed of two nearest-neighbour AsGa defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two AsGa defects. If one of the two electrons is excited into theT 2 resonant state of individual AsGa then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (AsGa)2 aggregate is the best candidate for EL2 centre in GaAs crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616060
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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  • 4
    Electronic Resource
    Electronic Resource
    Dislocations in high-purity germanium and its relation to γ-ray detector performance (1986)
    Springer
    Applied physics 40 (1986), S. 257-261 
    Details
    ISSN: 1432-0630
    Keywords: 29 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of dislocations in high-purity germanium influences the resolution of radiation detectors made from it. The four dislocation types found with electron microscopy are studied by DLTS to understand their influence on trapping in a γ-ray detector. Only three DLTS bands were found in commercially produced material. Statistical correlation with the detector resolution reported by various detector manufacturers finally yielded useful specifications with respect to the crystallographic perfection to be met in detector grade HP-Ge. The specification limits are discussed in view of the DLTS data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616604
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  • 5
    Electronic Resource
    Electronic Resource
    The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors (1986)
    Springer
    Applied physics 41 (1986), S. 291-295 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The modification of the emitter structure of silicon bipolar transistors results in more freedom in the choice between sometimes conflicting device parameters. The approach followed in this work is the use of an amorphous silicon (a-Si:H) or microcrystalline silicon (μc-Si) emitter, creating a real heterojunction with the crystalline silicon base. Due to the larger bandgap of these emitter materials, the back injection of minority carriers is strongly suppressed in comparison with conventional bipolar transistors. Furthermore, the small temperature coefficient of the current gainβ allows the use of these heterojunction bipolar transistors (HBT) over a wide temperature range. Most likely, the biggest advantage of such HBTs is that a better high-frequency behaviour could be obtained. However, some problems still need to be solved such as the recombination at the emitter-base interface and the high resistivity of the emitter material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616051
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  • 6
    Electronic Resource
    Electronic Resource
    A high-intensity58Co slow-positron beam and applications to probe near-surface disorder (1987)
    Springer
    Applied physics 43 (1987), S. 269-274 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties and performance of a magnetically-guided, high-intensity, ultra-high-vacuum slow-positron beam are reviewed. Basic positron behaviour in solids is briefly described. Results from various58Coβ + sources in conjunction with a backscattering W(110) moderator are presented. We discuss research applications to probe depth distribution of open-volume lattice defects. Two experimental methods capable of yielding information on defects within ∼500 Å and ∼1 μm from the surface, respectively, are considered. Results are shown on defect distribution in ion implanted metals and semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635182
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of multilayered targets ballistic effects (1987)
    Springer
    Applied physics 42 (1987), S. 193-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620598
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  • 8
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 9
    Electronic Resource
    Electronic Resource
    Surface space-charge layer analysis in semi-insulating GaAs containing deep levels in bulk (1986)
    Springer
    Applied physics 40 (1986), S. 219-225 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A computer simulation study of space-charge layers at the surface of semiinsulating GaAs containing deep EL2 and Cr centers in bulk is presented. Substantial influence of the deep bulk levels on the main characteristics of the surface space charge layers, is demonstrated. The special features of these characteristics and the conditions of their arising are discussed.
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    URL: http://dx.doi.org/10.1007/BF00616598
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  • 10
    Electronic Resource
    Electronic Resource
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 11
    Electronic Resource
    Electronic Resource
    On the gate capacitance of MOS structures of kane-type semiconductors under magnetic quantization (1987)
    Springer
    Applied physics 42 (1987), S. 331-336 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to formulate the gate capacitance of MOS structures of Kane-type semiconductors under magnetic quantization, without any approximations of weak or strong electric field limits, on the basis of the fourth-order effective mass theory and taking into account the interactions of the conduction, light-hole, heavy-hole, and split-off bands. It is found, taking n-channel Hg1−x Cd x Te as an example, that the gate capacitance exhibits spiky oscillations with changing magnetic field, which is in qualitative agreement with experimental observations, reported elsewhere, in MOS structures of the same semiconductor. The corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616572
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  • 12
    Electronic Resource
    Electronic Resource
    Nitrogen-oxygen complexes in Czochralski-silicon (1988)
    Springer
    Applied physics 46 (1988), S. 73-76 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared spectra of nitrogen doped Czochralski-grown silicon indicate absorption lines in addition to the well-known lines of local modes of oxygen, carbon and nitrogen centers. The most prominent lines of them can be shown to be correlated with certain oxygen and nitrogen concentrations. These lines are, therefore, thought to arise from N-O complexes and are discussed in the context of an O-induced disturbance of N2-pair vibrations. The results of preliminary investigations on the stability of such complexes are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615911
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  • 13
    Electronic Resource
    Electronic Resource
    Introduction to defect bistability (1989)
    Springer
    Applied physics 48 (1989), S. 3-9 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617758
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  • 14
    Electronic Resource
    Electronic Resource
    Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon (1989)
    Springer
    Applied physics 48 (1989), S. 41-47 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617762
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  • 15
    Electronic Resource
    Electronic Resource
    Tunneling from dislocation cores in silicon Schottky diodes (1985)
    Springer
    Applied physics 36 (1985), S. 55-61 
    Details
    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Selfquenching of the photocapacitance and of the reverse photocurrent in Schottky diodes made on dislocatedn-type silicon was discovered. A phenomenological model explaining this, rather unexpected, phenomenon is proposed. The model requires an introduction of a new mechanism of diode conductance via dislocation lines. Crucial for this mechanism is the possibility of electron tunneling from dislocation to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616462
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  • 16
    Electronic Resource
    Electronic Resource
    Point defects, diffusion processes, and swirl defect formation in silicon (1985)
    Springer
    Applied physics 37 (1985), S. 1-17 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617863
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  • 17
    Electronic Resource
    Electronic Resource
    Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction (1986)
    Springer
    Applied physics 39 (1986), S. 191-195 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620734
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  • 18
    Electronic Resource
    Electronic Resource
    Focused ion beam gallium implantation into silicon (1986)
    Springer
    Applied physics 39 (1986), S. 183-190 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
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    URL: http://dx.doi.org/10.1007/BF00620733
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  • 19
    Electronic Resource
    Electronic Resource
    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
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    URL: http://dx.doi.org/10.1007/BF00626412
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  • 20
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    Electronic Resource
    The influence of graphite boat material on the purity of LPE InGaAs (1987)
    Springer
    Applied physics 43 (1987), S. 37-40 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n〈2×l015 cm−3 and mobilitiesμ(77 K)〉 38000 cm2/Vs are routinely achieved for suitable graphite materials already from the third run of a new “large” boat applying a prebake of only 15 h. “Small” boats yield even better results (n=0.5×1015 cm−3 andμ(77 K)=49500 m2/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.
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    URL: http://dx.doi.org/10.1007/BF00615203
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  • 21
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    EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals (1987)
    Springer
    Applied physics 43 (1987), S. 117-121 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
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    URL: http://dx.doi.org/10.1007/BF00617963
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  • 22
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    248 nm laser etching of GaAs in chlorine and ozone gas environments (1988)
    Springer
    Applied physics 45 (1988), S. 301-304 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 82.50N ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract KrF laser etching of GaAs in Cl2 and O3 gas ambients by direct laser illumination is reported. The etch depth per pulse in Cl2 was found to be linear versus the laser fluence on the sample in the 0.2–1.1 J/cm2 range. It increased as a function of the Cl2 pressure up to 6 Torr and slightly decreased for pressures above this value. It also decreased as a function of the laser repetition rate. Very smoothly etched surfaces were obtained after irradiation using the Cl2 and O3 etching gases. Auger analysis of the etched GaAs surfaces shows almost no traces of chlorine after etching in Cl2, whereas a thick oxide layer of about 1500 Å thickness was found after etching in ozone.
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    URL: http://dx.doi.org/10.1007/BF00617935
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  • 23
    Electronic Resource
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    Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon? (1989)
    Springer
    Applied physics 48 (1989), S. 219-228 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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    URL: http://dx.doi.org/10.1007/BF00619388
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  • 24
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    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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    URL: http://dx.doi.org/10.1007/BF00619395
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    A novel technique for measuring resistance fluctuations independently of background noise (1989)
    Springer
    Applied physics 48 (1989), S. 233-236 
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    ISSN: 1432-0630
    Keywords: 06 ; 07 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
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    URL: http://dx.doi.org/10.1007/BF00619390
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    High frequency characterisation of double drift region InP and GaAs diodes (1989)
    Springer
    Applied physics 48 (1989), S. 437-443 
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    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Computer studies have been made on the high frequency characteristics of symmetrically doped flat profile double drift region (DDR) InP and GaAs impatts in the mm-wave (60–100 GHz) frequency band. The spatial distribution of high frequency negative resistance and reactance in the depletion layer of DDR devices and their admittance properties have been investigated. The results indicate that DDR InP impatts should have higher drift zone voltage drop, higher negative resistance and higher negative conductance compared to their GaAs counterparts designed for the same range of mm-wave frequencies. Furthermore, the negative resistance peak is larger in magnitude for InP impatts compared to that for GaAs impatts. It is thus observed that DDR InP impatts should be superior to their GaAs counterparts as regards mm-wave power generation with high conversion efficiency.
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    URL: http://dx.doi.org/10.1007/BF00619715
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    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
    Springer
    Applied physics 49 (1989), S. 659-664 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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    URL: http://dx.doi.org/10.1007/BF00616990
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    Reduction of the threshold temperature sensitivity of 1.55 μm InGaAsP lasers by subnanosecond optical excitation (1986)
    Springer
    Applied physics 39 (1986), S. 273-276 
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    ISSN: 1432-0630
    Keywords: 78.20 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In GaAsP lasers operating at 1.5 to 1.6 μm were pumped optically with a pulsed 1.06 μm source. The temperature dependence of the pump energy at laser threshold has been measured for temperatures from 170 to 330 K. Pump pulse widths of 300 ns and 150–300 ps were employed, long and short compared to the carrier life-time in the laser material. Over the high-temperature range of 260 to 330 K short pulse excitation gives a considerable reduction of the threshold temperature sensitivity with a characteristic temperatureT 0 ′ =85 K compared to T 0 h =45 K for long-pulse excitation. This is in qualitative agreement with previous results on electrically excited lasers although the temperature sensitivity of the optically excited lasers is larger. At temperatures between 170 to 260 K no reduction of the temperature sensitivity was observed.
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    URL: http://dx.doi.org/10.1007/BF00617272
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    Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells (1986)
    Springer
    Applied physics 41 (1986), S. 275-283 
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    ISSN: 1432-0630
    Keywords: 85.30 ; 86.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
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    URL: http://dx.doi.org/10.1007/BF00616049
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    Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre (1987)
    Springer
    Applied physics 42 (1987), S. 301-302 
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    ISSN: 1432-0630
    Keywords: 71.55 ; 85.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616567
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    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
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    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
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    URL: http://dx.doi.org/10.1007/BF00624604
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    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
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    URL: http://dx.doi.org/10.1007/BF00615129
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    Thermoelectric power of YBa2Cu3Ox in equilibrium with gas phases (1988)
    Springer
    Applied physics 47 (1988), S. 205-208 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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    URL: http://dx.doi.org/10.1007/BF00618886
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    The electrical activity of stacking faults in Czochralski silicon (1989)
    Springer
    Applied physics 48 (1989), S. 431-436 
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    ISSN: 1432-0630
    Keywords: 72.20J ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
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    URL: http://dx.doi.org/10.1007/BF00619714
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    Electron traps and positive DLTS signals in VPE GaAs MESFETs (1989)
    Springer
    Applied physics 48 (1989), S. 457-463 
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    ISSN: 1432-0630
    Keywords: 71.55 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.
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    URL: http://dx.doi.org/10.1007/BF00619718
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    Correlations between clusterization and electrical properties within fluorite-type anions excess solid solutions: Setting of a model (1989)
    Springer
    Applied physics 49 (1989), S. 3-12 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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    URL: http://dx.doi.org/10.1007/BF00615459
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    Structural, electrical and catalytic properties of ion-implanted oxides (1989)
    Springer
    Applied physics 49 (1989), S. 33-40 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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    URL: http://dx.doi.org/10.1007/BF00615462
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    Evidence for two energy levels associated with EL2 trap in GaAs (1985)
    Springer
    Applied physics 36 (1985), S. 213-216 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
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    Notes: Abstract By photocapacitance technique, applied to n-type LEC-grown GaAs, two energy levels:E v +0.45 eV andE c −0.75 eV are identified, for the first time, as being associated with the EL2 trap. As follows from the analysis of photo-EPR results on highly resistive GaAs crystals, the same energy levels can be attributed to the arsenic antisite defect, AsGA. In view of these findings, it is argued that the occupied EL2 level corresponds to the neutral charge state of AsGa defect.
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    One-dimensional regular arrays of antiphase domain boundaries in anti-ferroelectric tin-substituted lead zirconate titanate (PZT) Ceramics (1985)
    Springer
    Applied physics 36 (1985), S. 221-227 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 64 ; 77 ; 81.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The existence of one-dimensional regular arrays of antiphase domain boundaries has been confirmed in tin-substituted PZT ferroelectrics of ABO3 perovskite structure (Pb0.99{[(Zr1−y Sn y )1−x Ti x ]0.98Nb0.02}O3,x=0.03 and 0.04,y=0.20) by means of electron diffraction and lattice imaging. Calculation has been made of the number of satellite spots in the diffraction patterns and their positions determined. They coincide well with the electron diffraction patterns experimentally obtained. The finding proves the relative elongation in one dimension of the ferroelectric unit cell caused by a parallel array of electrical dipoles, as compared to the cell of an anti-parallel array of dipoles.
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    Nucleation process of stacking fault tetrahedra in gold studied by positron lifetime spectroscopy (1985)
    Springer
    Applied physics 37 (1985), S. 65-72 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract By component analyses of positron lifetime spectra in quenched gold, it was found that positrons are strongly trapped by stacking fault tetrahedra (SFT) at which the lifetime is about 160 ps remarkably smaller than that for monovacancies (∼200 ps) or divacancies (∼220 ps). Positron lifetimes at small vacancy clusters were also estimated in relation to the nucleation process of SFT, with the aid of computer simulation of kinetics of vacancy clustering during quenching and on subsequent isochronal annealing. The results show that large atomic relaxation occurs in small vacancy clusters among which pentavacancies have the largest open-space, thereby having the lifetime of about 230 ps larger than that of trior tetra-vacancies (∼160ps). It is also suggested that tetra- and penta-vacancies act as prenuclei for stable nuclei of SFT consisting of six or more vacancies.
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    X-ray studies of dislocations in multi-layer Cu films (1986)
    Springer
    Applied physics 39 (1986), S. 65-66 
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    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract Vacuum-prepared multi-layer Cu films have been studied by x-ray diffraction to detect the averaged dislocation density and distribution. There are very few stacking faults and a very small degree of texture in the films.
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    URL: http://dx.doi.org/10.1007/BF01177165
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  • 42
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    HREM investigation of twinning in very high dose phosphorus ion-implanted silicon (1986)
    Springer
    Applied physics 39 (1986), S. 83-90 
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    ISSN: 1432-0630
    Keywords: 61.50 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e.,Σ3 boundaries) andΣ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.
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    URL: http://dx.doi.org/10.1007/BF00616823
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    Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors (1986)
    Springer
    Applied physics 40 (1986), S. 101-107 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 8
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphorus starting from a high surface concentration generatesexcess point defects which diffuse into the depth of the crystal and lead to a tail in the phosphorus concentration profile by considerably enhancing the phosphorus diffusion in this region. It is also well known that the interface between silicon and a non growing oxide acts as a sink for excess point defects. Since source/drain areas of MOS transistors are surrounded by gate and isolation oxides, the question arises how the resulting excess point defect distribution may influence the lateral and vertical diffusion profile of phosphorus and hence the channel length and the junction depth of the source/drain region in a MOS device. We extended the one-dimensional Fair-Tsai model of phosphorus diffusion into two dimensions and incorporated that the interface between silicon and a gate oxide acts as a sink for excess point defects and modifies their distribution. The appropriate code was implemented in the two-dimensional process simulation program LADIS. Based on this extended model two-dimensional simulations of phosphorus drains have been performed and compared to experimental results and to results from other numerical models. It turns out that the presence of the gate oxide reduces the tail in the phosphorus concentration profile, considerably in lateral direction and less pronounced in vertical direction. Limitations of the model will be discussed in detail.
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    URL: http://dx.doi.org/10.1007/BF00616485
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    Models for implantation into multilayer targets (1986)
    Springer
    Applied physics 41 (1986), S. 201-207 
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    ISSN: 1432-0630
    Keywords: 34 ; 61.80 ; 85.30
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    Notes: Abstract Models for the description of implantation profiles in multilayer targets are compared. It is found that all analytical models have severe limitations if the different layers possess very different stopping powers. The best description of multilayer targets is obtained by a combination model using density scaling of the range and integration to account for mass conservation.
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    URL: http://dx.doi.org/10.1007/BF00616841
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    Excess capacitance of ZnO-Au varactors (1987)
    Springer
    Applied physics 42 (1987), S. 249-255 
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    ISSN: 1432-0630
    Keywords: 73.40 ; 85.30 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges. The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared. To bring further insight into the matter the concept of excess capacitance was introduced and 1/C 2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz. Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beN D= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasN D′=1.02×1022 m−3.
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    URL: http://dx.doi.org/10.1007/BF00620609
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    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 47
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    The positron beam at the stuttgart pelletron accelerator and its applications toβ +γ positron lifetime measurements (1987)
    Springer
    Applied physics 43 (1987), S. 261-267 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A slow-positron source has been installed in the therminal of an electrostatic 6.5 MeV accelerator and provides a monoenergetic positron beam in the few-MeV range. It will be used to operate a “fast” positron lifetime spectrometer based onβ + γ coincidences. The properties of the beam, the expected performance of the spectrometer, its advantages over conventionalγγ lifetime measurements, a number of intended applications, as well as recent positron-electron scattering experiments and plans for positron channelling and channelling-radiation studies are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635181
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  • 48
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    Amorphous silicon logic integrated circuits (1988)
    Springer
    Applied physics 45 (1988), S. 53-61 
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    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous silicon thin-film integrated circuits, with between 4 and 18 transistor functions per chip, have been fabricated on glass substrates. The amorphous silicon and the dielectric layers are deposited by rf glow discharge. The circuits have been designed to realize basic logic functions such as inverters, NAND and NOR gates, and addressable memory cells. For the first time, an amorphous silicon flip flop requiring a supply voltage of only 4.5 V has been manufactured. The logic voltage levels of the flip flop are compatible with standard bipolar TTL circuits. Measurements on an inverter chain show a typical propagation delay time of 70 μs and a power-delay-time product of 65 pJ. All of the circuits use n-channel enhancement type load transistors instead of integrated ohmic load resistors. The channel length of the driver transistors is 15 μm with a gate source/drain overlap of 7.5 μm. Experimental geometry ratios range from β=2.25 to β=21. Generally, the driver transistors exhibit on/off ratios greater than 106 for supply voltages smaller than 5 V. At these voltages the measured on-currents per unit channel width are in the order of 5...10nA/μm. The influence of the geometry ratio on static inverter characteristic and switching speed is discussed by means of a simple model. Two different manufacturing schemes for the fabrication of the integrated circuits are outlined. Mask layouts and experimental transfer characteristics of several integrated circuits are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618763
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  • 49
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    The structure and defect structure of high-T c superconducting materials in the system Tl-Ba-Ca-Cu-O (1988)
    Springer
    Applied physics 46 (1988), S. 233-239 
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    ISSN: 1432-0630
    Keywords: 74 ; 61.14 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron diffraction and high resolution electron microscopy have been applied to study Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10. The structures only differ in the thickness of the perovskite lamellae and have tetragonal basic unit cells witha=0.385,c=2.93 nm anda=0.385,c=3.58 nm, respectively. A modulation with wave vectors in (100)* and (010)* planes occurs in both compounds. This modulation of which the intensity is somewhat sample dependent is much weaker than in the Bi compounds and disappears irreversibly upon heating of the specimen. Intergrowth of lamellae of different phases does occur, although not as frequently as in the Bi compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939269
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  • 50
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    Physical properties and applications of Cd1−xPbxF2 superionic crystals (1989)
    Springer
    Applied physics 49 (1989), S. 413-424 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 85.80 ; 65.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615026
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  • 51
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    Electrochemical and structural characteristics of tungstic acids as cathode materials for lithium batteries (1989)
    Springer
    Applied physics 49 (1989), S. 83-89 
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    ISSN: 1432-0630
    Keywords: 72.60 ; 85.80 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrochemical characteristics and structural changes associated with discharge and charge of several tungstic acids such as H2WO4 and H2WO4 · H2O have been investigated. The suitability of these substances as new cathode materials for nonaqueous lithium batteries has been assessed. H2WO4, having only coordinated water molecules, showed a discharge capacity of about 410 Ah kg−1 of acid weight and a discharge potential around 2 V vs. Li/Li+. This capacity was much higher than the 40 ∼ 180 Ah kg−1 of anhydrous WO3. H2WO4 showed a good charge-discharge cycling behavior at a capacity below 1e −/W. However, the formation of a stable phase such as Li2WO4 during the cyclings limited the cycling number. In addition, the crystal structure of H2WO4 changed from orthorhombic to tetragonal during discharge, but the original layered lattice was kept on discharge to 1.5e −/W. On the other hand, a significant decrease in the layer spacing of H2WO4 · H2O took place with discharge, due to the direct interaction between the interlayer water molecule and the lithium inserted between the layers. In this paper, in particular, the effect of the coordinated and hydrated water molecules in the acid structure on the electrochemical behavior is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615469
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  • 52
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    Electrical properties of novel mixed-conducting oxides (1989)
    Springer
    Applied physics 49 (1989), S. 25-31 
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    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615461
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  • 53
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    Dielectric relaxation and computer simulation studies of rutile-structured MnF2 crystals (1989)
    Springer
    Applied physics 49 (1989), S. 69-73 
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    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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    URL: http://dx.doi.org/10.1007/BF00615467
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  • 54
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    Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing (1989)
    Springer
    Applied physics 49 (1989), S. 149-155 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616293
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  • 55
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    A macro-resonance-cell description for high-T c oxide superconductors (1989)
    Springer
    Applied physics 49 (1989), S. 171-179 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 61.70 ; 63
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A phenomenological macro-resonance-cell description of bonding in high-T c oxide superconductors based on some common structural features is proposed. In this description, the oxidation states of the cations on the lattice frame are assumed to be oscillating. The oxygen atoms are described as being in a “breathing mode” and coupling is assumed to exist between the CuO2 layers and the boundary (capping) layers in these quasi two-dimensional systems. The variation ofT c for different materials is attributed in part to the relative effectiveness of the coupling between different kinds of boundary layer(s). Peierl's deformation or Jahn-Teller effect assisted by lattice softening and possibly magnetic ordering is discussed in relation to high-T c superconductivity in these oxides.
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    URL: http://dx.doi.org/10.1007/BF00616296
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  • 56
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    A Systematic investigation of the dc electrical conductivity of rare-earth doped ceria (1989)
    Springer
    Applied physics 49 (1989), S. 225-232 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616848
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  • 57
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    Effects of annealing temperature on the alloying behavior of the AuGe-GaAs〈100〉 interface (1989)
    Springer
    Applied physics 49 (1989), S. 285-292 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 82.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract UV(He I) and X-ray photoelectron spectroscopies (UPS and XPS) were used to examine the alloying behavior of AuGe ohmic contacts to silicon-doped 〈100〉 oriented n-type GaAs substrates. The reacted interface was then revealed by Ar ion sputter depth profiling at room temperature and after annealing in ultra high vacuum at 300°, 500°, or 700°C. The indiffusion of Au and the outdiffusion of Ga and As are evident. Instead of obtaining a maximum peak of the Ge profile on annealing in forming gas, we observed an increase of Ge indiffusion with temperature. The Au indiffusion results in a decrease in the Au 5d splitting and a shift of both levels to higher binding energy. Au-Ga alloy formation is indicated by the Au 4f levels, and is further supported by the observation of the metallic Ga peak. It has been concluded that the sample annealed at 500°C forms the Au-Ga alloy and the compound of As containing Ge more easily than the samples annealed at 300° or 700°C. This result is consistent with the observations of low contact resistance at the annealing temperature of ∼ 500°C for AuNiGe ohmic contacts to n-type GaAs.
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    URL: http://dx.doi.org/10.1007/BF00616856
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