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  • American Institute of Physics (AIP)  (5,220)
  • Oxford University Press  (3,927)
  • American Association for the Advancement of Science (AAAS)  (2,027)
  • 2000-2004
  • 1985-1989  (11,174)
  • 1985  (11,174)
Collection
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Publisher
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  • 2000-2004
  • 1985-1989  (11,174)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Nonequilibrium thermostatics (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3282-3294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent thermodynamics is developed for nonrelaxation hysteretic processes. This theory, nonequilibrium thermostatics, is based upon macroscopic empirical descriptions of hysteretic behavior and the laws of thermodynamics. It is shown that the empirical behavior of hysteretic systems does not satisfy the conditions required for application of either equilibrium or relaxation nonequilibrium thermodynamics. Therefore, modified thermodynamic assumptions are proposed which are consistent with empirical hysteretic behavior. The principal new assumptions are (1) that processes (energy dissipation permitted) consists of a differential sequence of nonequilibrium states; (2) that three new "state variables'' describe all of the "history dependence of a state;'' (3) that at least some "reversible'' processes exist; (4) that the time-independent "modified Gibbs relation'' can be used to describe the Second Law constraints. With these assumptions, it is shown that the thermodynamic relationships derived from the First Law are identical to those for standard equilibrium thermodynamics, but Second Law implications are significantly different, e.g., a new "dissipation'' state function is derived; it is proven that hysteretic behavior is a positive indication of a dissipative process and that dissipation always causes hysteresis. It is concluded that nonequilibrium thermostatics provides a self-consistent theory which extends the useful domain of thermodynamics to include nonrelaxation, hysteretic (dissipative)processes. A comparison of detailed predictions and experimental measurements of heat capacities, adiabatic paths, etc., for a hysteretic system is provided in a separate paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335788
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum model of the free-electron laser in a uniform magnetic field (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3314-3321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum model of the single particle free-electron laser in a uniform magnetic field is given. Here the classical electron current due to electrons in helical orbits (caused by a uniform magnetic field) interacts with a quantized radiation in the interaction volume of finite extent. The description of this free-electron laser is through the S matrix which incorporates the quantum recoil completely and yields directly the full "quantum mechanical'' gain. Taking the relativistic electron factor γ to be approximately equal to 2.4 and the magnitude of the magnetic field in the range of 0.6–1.6 T, this free-electron laser should be capable of generating radiation in the far infrared-microwave spectral region. From the analysis of the asymptotic (classical limit) gain (a gain due to the "infinite'' number of photons in the interaction volume V), we conclude that it is generally easier to generate radiation in the forward, rather than backward, direction. We also discuss the dependence of the gain on the electron velocity in the z direction, the strength of the uniform magnetic field, and the fact that our (asymptotic) gain scales as L3, which is similar to the gain of the usual (wiggler) free-electron laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335791
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  • 3
    Electronic Resource
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    Improved theory of ultrasonic diffraction at large angles (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3333-3339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic theoretical study of approximations to the Kirchhoff diffraction integral is presented, stressing the improved behavior at large angles. This work was motivated by consideration of diffraction in dual tilted dispersive interdigital transducers for surface acoustic wave generation, but the salient features are applicable to diffraction problems in general. Previous treatments of surface acoustic wave (SAW) propagation were limited to nearly forward directions perpendicular to transducer fingers, where the simple Fresnel diffraction theory was adopted. Improvement of the theory for nonforward angles is obtained in which both the Fraunhofer and Fresnel diffractions are correctly included. The conventional diffraction treatment used in optics (as in the textbook by Born and Wolf) is found inaccurate and a new form is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335794
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  • 4
    Electronic Resource
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    Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3350-3355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of positive ions incident on a grounded surface in a low-pressure argon planar rf glow discharge system has been measured as a function of excitation frequency from 70 kHz to 13.56 MHz for both capacitive and direct coupling of the rf power to the excitation electrode. The results are interpreted by taking into consideration both the transit time for the ion to traverse the sheath relative to the period of the rf excitation voltage, and the resistive or capacitive characteristics of the sheaths. The importance of system geometry and of the dc potential of the excitation electrode (as determined by external circuitry) on the maximum energy of ions incident on grounded surfaces is shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335797
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  • 5
    Electronic Resource
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    Thermally activated peroxy radical dissociation and annealing in vitreous SiO2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3368-3372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isochronal and isothermal annealing results for peroxy radical defects induced in Suprasil W1 by γ irradiation are reported. The activation energy for annealing is estimated to be ∼2 eV and argued to be due to OO bond dissociation rather than gaseous interstitial or network diffusion. The results are shown to be consistent with those obtained from annealing/reactivation studies on oxygen vacancy defect centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335800
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  • 6
    Electronic Resource
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    Atomic and microstructural characterization of metal impurities in synthetic diamonds (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3388-3393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase and microstructure of Ni, Co, and Fe impurities found in synthetic diamonds have been characterized in some detail using a combination of extended x-ray absorption fine structure (EXAFS) utilizing intense synchrotron radiation as a light source, and conventional transmission electron microscopy (TEM), x-ray diffraction, and fluorescence analyses. In all three cases, the metal impurity exists as an fcc metallic phase dispersed in the diamond matrix. The particles are submicron in size and not facetted. There was no evidence of a metal carbide phase in these systems. Quantitative simulations of the first-shell EXAFS signal showed that the Co and Ni particles contain, respectively, 2.3 and 1.5 at. % of carbon in solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335755
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  • 7
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    Unreacted Hugoniot of Composition B-3 for stresses of 0–16 kbar (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3404-3408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A light gas gun has been used to measure the unreacted Hugoniot of both pressed and cast Composition B-3. Transmitted stress and wave speeds were determined from quartz gauges placed on the rear surface of explosive disks. Both pressed and cast Composition B-3 exhibited elastic–plastic behavior. Good agreement was found between the elastic and plastic shock wave speeds and those determined ultrasonically. The elastic constants for pressed Composition B-3 were evaluated ultrasonically. Apparently, reaction in Composition B-3 has not occurred in the Hugoniot measurements described in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335758
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  • 8
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    Refractory amorphous metallic (W0.6Re0.4)76B24 coatings on steel substrates (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3409-3414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractory metallic coatings of (W0.6Re0.4)76B24 (WReB) have been deposited onto glass, quartz, and heat-treated AISI 52100 bearing steel substrates by dc magnetron sputtering. As-deposited WReB films are amorphous, as shown by their diffuse x-ray diffraction patterns; chemically homogeneous, according to secondary ion mass spectrometry (SIMS) analysis; and they exhibit a very high (∼ 1000 °C) crystallization temperature. Adhesion strength of these coatings on heat-treated AISI 52100 steel is in excess of ∼20, 000 psi and they possess high microhardness (∼ 2400 HV50). Unlubricated wear resistance of such hard and adherent amorphous metallic coatings on AISI 52100 steel is studied using the pin-on-disc method under various loading conditions. Amorphous metallic WReB coatings, about 4 μm thick, exhibit an improvement of more than two and a half orders of magnitude in the unlubricated wear resistance over that of the uncoated AISI 52100 steel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336295
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  • 9
    Electronic Resource
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    Interdiffusion in the Ta-W system (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3425-3429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in the Ta-W system, a continuous body-centered-cubic solid solution, has been investigated in the temperature range 1300–2100 °C with single-phase diffusion couples prepared by chemical vapor deposition. Fine inclusions, presumably oxides or carbides, decorated the couple interfaces and served as Kirkendall markers. The diffusion annealing times ranged from 16 h to 220 days. The resulting concentration profiles were measured with the electron microprobe and analytical electron microscope. The chemical diffusion coefficient was determined by the classical Boltzmann–Matano technique. The intrinsic diffusivities were determined by the technique of Darken. In the composition range 20–80 at. % W, the activation energy Q for chemical diffusion was constant at 130.5±1.5 kcal/mole. The activation energies for the intrinsic diffusion coefficients at the composition of the Kirkendall marker plane, approximately 70 at. % W, were Q(Ta)=132.3±0.5 kcal/mole and Q(W)=122.0±0.5 kcal/mole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335761
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  • 10
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    Al/TiW reaction kinetics: Influence of Cu and interface oxides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3440-3443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of Al with Ti22W78 alloys has been investigated under vacuum annealing conditions. In particular, the effects of Cu in Al and venting during deposition of TiW were studied. It was observed that Cu did not play any significant role in the kinetics of the interdiffusion of Al and TiW. During the reaction process at temperatures around 500 °C, Ti accumulated on the surface of the samples with or without Cu in Al. The Ti accumulation is diffusion limited with an activation energy of 2.4 eV. Interface oxides are believed to be primarily responsible for the stability of Al/TiW metallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335764
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  • 11
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    SiL core edge fine structure in an oxidation series of silicon compounds: A comparison of microelectron energy loss spectra with theory (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3463-3469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron energy loss spectra were obtained from small (approximately 100-A(ring) diam) regions of a series of single-phase silicon-containing specimens at 100-keV incident beam energy, using a field emission source transmission electron microscope fitted with a magnetic sector spectrometer. The specimen foils were diamond cubic silicon, α-silicon carbide, α-silicon nitride, and amorphous silica. The SiL near-edge structure depends markedly upon the chemical environment of the silicon. In this paper we show that the changes in near-L-edge structure, including threshold onset energy shift and edge profile, result from bond-induced changes in the valence shell electronic structure of the specimen materials. Extended Hückel molecular orbital theory was used to calculate the valence shell electronic structure of five-atom tetrahedral clusters, with silicon as the central atom and the other atoms noted above in corner positions. Inelastic electron scattering cross sections for silicon 2p and 2s core shell transitions to valence shell excited states were then calculated using the first Born approximation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335768
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  • 12
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    Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3485-3493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of slow-relaxation phenomena is reported together with the conventional fatigue phenomenon in photoconductivity for undoped semi-insulating liquid-encapsulated Czochralski GaAs. First, conventional fatigue is induced by the ∼1.1-eV light irradiation (primary light). Secondary-light irradiation (∼0.8 eV) subsequently carried out is found to generate a rapid increase followed by a gradual exponential decrease in photoconductivity. The latter phenomenon shows very different characteristics from those of conventional fatigue, though the two phenomena are similar to each other. Through the detailed experimental studies, a configuration-coordinate model is presented, involving a main deep level X and its metastable excited state X* with large lattice relaxation. This phenomenon is explained by the transition of electrons which occurs in part from level X* excited by the preceding primary-light irradiation, via level X, to the conduction band as a result of secondary-light irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335772
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  • 13
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    Simulation for static and dynamic performance of a superconducting analog-to-digital converter (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3515-3518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The simulation of a superconducting flux counting analog-to-digital (A/D) converter for advanced high-speed signal processing systems is performed to investigate its performance and sensitivity. This report describes the algorithms and the results associated with simulating the whole sequence (count-store-readout-reset-count). Parameter sensitivities are also checked and optimized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335777
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  • 14
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    Growth and characterization of flash-evaporated ferroelectric antimony sulphoiodide thin films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3530-3535 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin films of antimony sulphoiodide (SbSI) have been grown by flash evaporation in the thickness range of 0.1–1.5 μm. Annealing the films in a sulphur atmosphere at 100 °C for 10–12 min improved their stoichiometry and crystallinity. Structural studies revealed that films deposited normal to the substrate have a tendency to grow with the c axis oriented at 6° to the substrate. The refractive index and band gap estimated from the optical transmission curves for 1.0-μm-thick films were found to be 4 and 1.97 eV, respectively. The measured relative dielectric constant (ε') for a 1.0-μm thick film at 100 KHz, 300 K was ∼73. Reproducible ferroelectric-to-paraelectric phase transitions were observed for films thicker than 0.2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335779
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  • 15
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    Nature of the 1.5040–1.5110-eV emission band in GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3549-3555 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A structural analysis of the luminescence spectra of molecular-beam-epitaxy grown GaAs layer, in the energy range 1.5040–1.5110 eV (g-v lines) is reported. At least two distinct recombination processes are distinguished from the selectively excited photoluminescence, not the excitation spectra and the luminescence polarization measurements. The relation of several lines in this emission band with oriented complex defects is established and suggested acting as isoelectronic centers.
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    URL: http://dx.doi.org/10.1063/1.335729
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  • 16
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    Magnetic properties of nonirradiated and neutron irradiated iron-lead-borate glasses (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3628-3629 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of magnetic measurements performed on xFe2O3(1−x)[yB2O3 PbO] glasses having y=0.5, 1, 2, and 3 and x≤25 mol % Fe2O3 are reported. For identical Fe2O3 content the Curie constants are greater as the PbO content of the glass matrix is higher. This is due to the increase of the fraction of Fe3+ ions as evidenced by Mössbauer effect measurements. As B2O3 content increases, a more random distribution of the ferric ions in the glass matrix takes place. Under the action of fast neutrons some iron ions situated in clusters are displaced and occupy sites more randomly distributed in the B2O3-PbO matrix. In addition, a fraction of ferrous ions is converted to ferric.
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    URL: http://dx.doi.org/10.1063/1.335740
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  • 17
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    Simulations of temperature measurements of shock-heated solids (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3634-3637 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rarefaction of a shock-heated solid surface into vacuum and the luminous radiation emitted by the surface were studied using a one-dimensional hydrodynamic code. The temporal evolution of the spectral and brightness temperatures as observed by a remote detector was determined. Moreover, the time-integrated spectral temperature was computed to simulate the actual experimental measurements. For shock speeds greater than 106 cm/s and for measurement times exceeding a few picoseconds, the code predicted a significiantly lower "observed'' temperature, in good agreement with experiments.
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    URL: http://dx.doi.org/10.1063/1.335742
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  • 18
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    Free-carrier absorption in quasi-two-dimensional semiconducting structures for nonpolar optical phonon scattering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3640-3642 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The theory of free-carrier absorption is given for quasi-two-dimensional semiconducting structures when the carriers are scattered by nonpolar optical phonons and the radiation field is polarized in the plane of the layer. The absorption coefficient is calculated and is found to be an oscillatory function of the thickness of the layer and is enhanced over its bulk value for low values of thickness of the layer. Separate peaks associated with transitions involving phonon emission and absorption are observed. The results are interpreted in terms of phonon-assisted transitions between size quantized subbands.
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    URL: http://dx.doi.org/10.1063/1.335745
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  • 19
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    Projected range and damage distributions in ion-implanted Al, Si, Al2O3, and GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3377-3387 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrates of Al, Si, Al2O3, and GaAs were implanted with 100 to 420-keV Al, Ar, Mn, Ni, Zn, Te, and Xe ions at low temperature of about 100 K. The reduced energies range from 0.2 to 4. The implantation energies were calibrated accurately using a nuclear resonance reaction of 19F( p,αγ)16O. The depth distributions of the implanted ions and the induced damage were determined by means of backscattering (including channeling) combined with computer-simulated spectrum analysis. The results are compared with the theoretical predictions given by Gibbons et al. (GJM) and Winterbon et al. (WSS). For the latter theory, optimum WSS parameters are determined to give a good fit to the experimental data. The systematic investigation reveals that the reduced projected range and damage depth are proportional to reduced energy ε for Al, Si, and Al2O3, whereas they are expressed in the form ε2/3 for GaAs substrates.
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    URL: http://dx.doi.org/10.1063/1.335754
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  • 20
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    A model for time dependence in shock-induced thermal radiation of light (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3394-3399 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-speed optical pyrometry has seen increasing application in the measurement of shock temperatures in initially transparent solids and liquids; however, the information contained in the time-dependent intensity of the emitted light has frequently been overlooked. A model has been developed for this time dependence in the observed intensity of light emitted from materials undergoing high-pressure shock loading. Most experimental observations of this time dependence can be explained on the basis of geometric effects only, without having to invoke intrinsic time dependences of the source intensity (due to changes in temperature, emissivity or shock-wave structure). By taking advantage of this fact, observed time dependences can be used to determine the absorption coefficient of shocked materials and their effective emissivities, thereby providing more precise temperature measurements. The model is invoked under various limiting conditions to explain time dependences previously observed in NaCl, CaO, Mg2SiO4 (forsterite), SiO2 (quartz), MgO, and CaAl2Si2O8 (anorthite) glass. As an example, the linear absorption coefficient at 650 nm of NaCl shocked to 75 GPa is found to be 13 cm−1, close to previously published values based on a similar but less general model.
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    URL: http://dx.doi.org/10.1063/1.335756
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  • 21
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    Erratum: Magnetic and electrical properties of Fe-B-N amorphous films (invited) [J. Appl. Phys. 57, 3527 (1985)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3673-3673 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
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    URL: http://dx.doi.org/10.1063/1.336318
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  • 22
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    Short-term isothermal annealing of polyethylene single crystals (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2822-2830 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polyethylene single-crystal mats 20 μm thick were heated to the annealing temperatures (120–132 °C) in less than 1 s. The Cornell High Energy Synchrotron Source (CHESS) and a TV detector system were used to obtain wide- and small-angle x-ray scattering patterns from these mats during annealing with a time resolution of 0.3 s. Both whole polymer and a molecular weight fraction showed rapid melting and recrystallization, with a minimum crystallinity at 2–4 s after reaching the annealing temperature. Recrystallization was essentially complete in 60–90 s and most curves could be fitted to the Johnson–Mehl–Avrami equation with exponent n=1. Two-thirds of the material could be molten before there was any loss of the original crystal orientation. The increase in long period was discontinuous at high annealing temperature. The original small-angle long-spacing peak quickly lost intensity as crystallinity fell and a new peak appeared at larger long spacing. This new long spacing increased with time for the whole polymer and was constant for the fractionated material. At lower annealing temperatures the amount melting was small and the small-angle intensity and long period increased continuously.
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    URL: http://dx.doi.org/10.1063/1.335880
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  • 23
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    High electric field resistivity and pyroelectric properties of vinylidene fluoride-trifluoroethylene copolymer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2854-2860 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copolymers of vinylidene fluoride-trifluoroethylene P(VDF-TrFE) exhibit large piezoelectric and pyroelectric effects. In addition to the most common application of the pyroelectric effect (radiant detection) it is possible to convert heat directly into electrical energy by pyroelectric conversion. This study reports the first measurements of high (constant) field pyroelectric effects of P(VDF-TrFE) which are relevant to pyroelectric conversion. Electric displacement changes which result from temperature changes of the copolymer were measured for thermal cycling from room temperature to 90 °C at fields up to 1 MV/cm. The displacement changes (0.1–0.3 μ C/cm2) were dependent upon the molar ratio of the constituent monomers. The resistivity of the copolymer was also measured in the temperature range 20 to 90 °C and was found to vary from 1012 to 1016Ω cm depending on monomer ratio, temperature, field, and time. The resistivity and displacement change data are discussed in terms of predicted pyroelectric energy conversion performance.
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    URL: http://dx.doi.org/10.1063/1.335857
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  • 24
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    Generation and propagation of defects into molecular beam epitaxially grown GaAs from an underlying GaAs substrate (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3449-3455 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation and growth striation hereditability from liquid-encapsulated Czochralski (LEC) grown GaAs substrates to molecular beam epitaxially (MBE) grown epilayers is studied for the different types of epilayer structures including homo-, hetero-, and superlattice. Also the correlation of surface defects in the epilayers with dislocations in the substrates is studied. It is found that growth striation in the substrate is not inherited into the epilayer, whereas dislocation propagation strongly depends on the epilayer structure. Dislocation distributions in GaAs epilayers for homo- (GaAs/GaAs substrate) and hetero- (GaAs/Al0.3Ga0.7As or AlAs/GaAs substrate) structures inherit the dislocation distribution maps for their substrates. On the other hand, dislocation propagation can be effectively prevented by introducing an AlAs/GaAs superlattice spacer between the GaAs epilayer and the substrate. As for surface defects, micron-sized hillocks emerge when the superlattice structure is fabricated. Their morphological configurations are very similar to those of previously reported oval defects in MBE-grown GaAs layers. However, these newly found surface defects are apt to be generated by the shutter operation and this close correlation with the dislocations in the substrate is quite different from the usual oval defects.
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    URL: http://dx.doi.org/10.1063/1.335766
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    Open-circuit voltage-decay behavior in p-n junction diode at high injection (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3476-3480 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The open-circuit voltage-decay of a highly forward biased p-n junction diode switched off abruptly after reaching steady state is studied theoretically for high-level injection. The present theory takes into account the terminal voltage instead of junction voltage as the open-circuit voltage, and is based on ambipolar diffusion phenomenon. The results are in qualitative agreement with the available experimental results for the entire range of decay characteristics.
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    URL: http://dx.doi.org/10.1063/1.335770
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    A study of hydrogenated amorphous silicon deposited by hot-wall glow discharge (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3494-3498 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of a-Si:H films deposited in a hot-wall glow-discharge machine. Optical and transport properties were studied as a function of frequency (400 kHz and 13.56 MHz) and power of the radio frequency (rf), temperature and pressure during deposition, and they were found very similar to those of films deposited by other glow-discharge techniques. Thin films (〈1 μm) have a higher defect density than thicker films. The lowest defect density and disorder are achieved in the 200–250 °C temperature range. Pressure and rf frequency have no effect on defect density and disorder but control the position of the Fermi level. Reversible defect creation is induced by long and intense light irradiation but this induces no shift of the Fermi level.
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    URL: http://dx.doi.org/10.1063/1.335773
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    Influence of rf power on the properties of hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering of silicon in methane-argon gas mixtures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3504-3507 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rf power dependence of structural, optical, electrical, and optoelectronic properties of hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering of silicon in methane-argon gas mixtures has been investigated. With increasing rf power, the optical band gap and the activation energy of dark conductivity decrease, accompanied by a decrease in the concentration of Si-C bonds. The dark conductivity and the photoconductivity increase with increasing rf power. These results are discussed in terms of the compositional and structural change of the films with rf power, such as the factor of preferential attachment of hydrogen to carbon deduced from IR measurements, and the conduction-band tail width deduced from optical absorption spectra or from temperature dependence of photoconductivity.
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    URL: http://dx.doi.org/10.1063/1.335775
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    Nb-based A15 compound Josephson tunnel junctions fabricated using a CF4 cleaning process: Fabrication conditions and barrier properties (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3519-3529 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Josephson tunnel junctions with Pb counterelectrodes have been fabricated on magnetron-sputtered Al5 Nb3X(X=Al,Ge) thin films using a CF4 plasma cleaning process (CFCP) in conjuction with standard photolithographic processing. The fabrication conditions necessary to produce optimized junctions and their tunneling properties have been investigated. The junction quality rapidly decreases with the increase in the discharge cathode self-bias voltage (VCSB) during the plasma oxidation as well as the CF4 cleaning. The optimum voltage for the cleaning necessary to obtain high-quality junctions with a uniform current distribution is common to both compounds and exists in the narrower range of 120–140 V than for Nb/Pb junctions. Nevertheless, high-quality Nb3X/Pb junctions with Vm 〉20 mV can be highly reproducibly fabricated for a wide range of the critical current density (1–103 A/cm2). Such junctions show high barrier height values of 0.8–1.0 eV and good aging stability, which is also the case for the Nb/Pb junctions fabricated using CFCP. X-ray photoelectron spectroscopy (XPS) and ellipsometric measurements on the CF4-cleaned base electrode surface indicate the presence of an ultrathin fluoride overlayer which is composed of Nb-F and X-fluorides. The former also show that the tunnel barrier is a mixture of Nb2O5, Nb-F-O, and X-F-O. These results, in addition to those for barrier height measurements, suggest that F atoms prevent the defect creation in the barrier and the selective Nb oxidation. They, thus, play an important role in the formation of the highly insulating barriers as well as a nearly ideal barrier-electrode interface without a substantial proximity layer.
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    URL: http://dx.doi.org/10.1063/1.335778
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    Optical pumping study of GaAs before and after copper diffusion (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3541-3548 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical-pumping properties of n-type GaAs and the modification of these results produced by compensation of the crystal by diffusion of copper acceptors. The rate of circular polarization and its decrease as a function of a transverse magnetic field have been measured for the various luminescence lines. We obtain the values of lifetime τ and spin-lattice relaxation time T1 of conduction electrons. Whereas T1 does not change upon copper introduction, τ is found to be decreased by two orders of magnitude because copper acts as a killer center. The compensation of the crystal can be characterized in a straightforward manner from the study of the luminescence polarization as a function of energy in the vicinity of the band gap. Finally, the inhomogeneities of the crystal and the local strains can be investigated respectively from the measure of the nonlorentzian tail of the depolarization curve in a transverse magnetic field and of the polarization of acceptor-related luminescence. All these results show that optical-pumping techniques can allow simple nondestructive characterization of semiconductors.
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    URL: http://dx.doi.org/10.1063/1.335728
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    Excimer laser-induced chemical vapor deposition of titanium silicide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3573-3582 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed ArF excimer laser has been used to deposit thin conductive films of titanium silicide on silicon and silicon oxide substrates. The films are deposited from a gas mixture of titanium tetrachloride and silane by initiating photochemical reactions near the heated substrate. The resistivity, composition, crystal structure, and morphology of the films vary as a function of gas composition and substrate temperature. Films deposited at 400 °C, with SiH4/TiCl4 mole ratios of ∼2, have resistivities of 300 μΩ cm, which drop to 20–30 μΩ cm on annealing at 650–700 °C. At higher deposition temperatures (450–550 °C) the films have resistivities of ∼110 μΩ cm and show similar annealing behavior. The as-deposited films are a mixture of amorphous and a metastable Ti-Si crystalline phase. On annealing they convert to polycrystalline TiSi2. Films deposited at 400–450 °C are smooth and show conformal step coverage. The film roughness increases at higher deposition temperatures.
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    URL: http://dx.doi.org/10.1063/1.335733
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    Comparison of the structure and electrical properties of thin tungsten films deposited by radio frequency sputtering and ion beam sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3583-3589 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of tungsten have been prepared by radio frequency (rf) diode sputtering and a saddle field ion beam source. The microstructure and electrical properties of the ion-beam sputtered films are comparable to those of rf sputtered films deposited at low-deposition rates. rf sputtered films deposited at high rates have larger grains and consist of β-W. They also have lower sheet resistances. An x-ray photoelectron spectroscopy analysis revealed that all of these films contained a considerable proportion of oxygen, the ion beam sputtered films containing more. Ion beam sputtering offers no advantages over low-rate rf sputtering of tungsten.
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    Electromagnetic surface waves: New formulas and their application to determine the electrical properties of the sea bottom (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3612-3624 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic surface waves can propagate along boundaries between electrically different media like air and earth or sea water and rock. They have unusual properties that make them valuable tools in geophysical prospecting and diagnostics. They are not suited to deep sounding. Much of the current theory for their geophysical application has been limited to ranges of the parameters and variables that permit the use of Norton's graphs which were developed for radio communication over the earth. A recently derived set of accurate, very general, and simple formulas for the surface-wave fields of antennas near a boundary surface has provided an expanded horizon for understanding and using surface waves as distinct from plane waves that travel down into the earth. The new formulas are given and used to assist in the interpretation of available measurements and then applied to the determination of the average conductivity and permittivity of the part of the lithosphere very close to the sea bottom where the lateral waves travel.
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    URL: http://dx.doi.org/10.1063/1.335739
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    Evaluation of silicon films as a diffusion mask and encapsulant for InP and GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3630-3633 
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    ISSN: 1089-7550
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    Topics: Physics
    Notes: We have determined that silicon films have nearly ideal properties for use as a diffusion mask and encapsulation coating for InP and GaAs. The Si films, composed of a single element, are easily and reproducibly deposited by electron beam evaporation at low temperatures. Sharp features can be defined by standard photolithography and freon-plasma etching. The thermal coefficient of expansion of silicon nearly matches that of InP and GaAs so that problems due to film stress are avoided. Additionally, the interaction of Si with InP and GaAs crystals, under severe thermal treatments often used in device fabrication, was found to be negligible. Finally, we found that the Si film acts as a good diffusion mask for Zn which is a common p-type impurity for forming p-n junctions in III-V compounds.
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    Reply to "Comments on ‘Equivalence of the Lorentz and Ampere force laws in magnetostatics [J. Appl. Phys. 57, 1743 (1985)]' '' (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3639-3639 
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    Topics: Physics
    Notes: The examples given by Graneau do not contradict the equivalence of the two laws in magnetostatics. Both laws give the same magnetic force per unit volume, which is normal to the current density. The stress in a conductor due to this applied force then follows from the mechanical laws of the conductor and its contraints.
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    Thermopower enhancement in semiconducting quantum well wires for acoustic phonon scattering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3643-3645 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expressions for thermopower in semiconducting quantum well wires are obtained when electrons are scattered by acoustic phonons via deformation potential coupling. In the size quantum limit, in nondegenerate semiconductors, the thermopower is found to be enhanced over its bulk value in a certain range of transverse dimension of the wire. The enhancement is found to increase with the decrease of temperature.
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    Reactively magnetron sputtered Hf-N films. I. Composition and structure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3104-3111 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Hf-N, covering the entire composition range from pure Hf to overstoichiometric HfN, have been prepared by reactive magnetron sputtering. The structure of the films has been investigated by x-ray diffraction, transmission electron microscopy, and scanning electron microscopy and the composition has been determined using Auger electron spectroscopy. A solubility of ≈30 at. % nitrogen is found in the α-Hf region. Above 30 at. % N a multiphase structure consisting of α-Hf, HfN, Hf3N2, and/or Hf4N3 is found, which is not in agreement with the equilibrium structure. In the mononitride region a lattice parameter of ≈4.53 A(ring) is observed. This value is slightly higher than reported bulk values due to intrinsic stress in the films. Increasing the nitrogen content above 50 at. % causes a distortion of the cubic symmetry of the lattice. This is first observed as an increase in the (111) interplanar spacing while other spacings decrease. Also a splitting of some reflections occurs at higher nitrogen contents. This phase transition is suggested to be due to a successive change from a cubic to a rhombohedral structure.
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    A study of the photovoltaic effect of a semiconductor grain boundary by a scanning laser beam (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3129-3132 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser spot is analyzed assuming a single trap energy level. The current is calculated from the recombination velocity and the concentration of the minority carriers at the grain boundary which was derived from the continuity equation. The open-circuit voltage across the sample is obtained from equating this recombination current to the compensating current using the thermionic emission model. Using the recombination velocity and the diffusion length as variables, the calculated open-circuit voltage is compared with the experimental data.
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    Inhomogeneity model for anomalous Hall effects in n-type Hg0.8Cd0.2Te liquid-phase-epitaxy films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3150-3153 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous Hall effects, i.e., peaks in the temperature dependence of the Hall coefficient and Hall mobility, have been observed in liquid-phase-epitaxy (LPE) Hg0.8 Cd0.2Te films. After establishing that surface effects are not the cause of the anomalies and that our LPE films are indeed n type, we propose an inhomogeneity model with a network of extended p-type inclusions in an n-type matrix. Good fits to the experimental data have been obtained by computer simulation based on this model.
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    URL: http://dx.doi.org/10.1063/1.335819
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    Optical behavior of sputter-deposited platinum-oxide films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3169-3173 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of platinum-oxygen alloys were grown by sputter deposition using a platinum target and rf-excited, oxygen-bearing discharges. The films were deposited on water-cooled single-crystal silicon and glass substrates. Optical behavior in the near-ultraviolet–visible–near-infrared region was studied by spectrophotometry. Changes in reflection and transmission were correlated with changes in film chemistry and structure. The absorption coefficient and two-infrared optical transitions across the band gap were determined for a semiconducting Pt-oxide phase, identified by x-ray photoelectron spectroscopy as α-PtO2. These transitions occur at 1.30 eV (0.95 μm) and 1.47 eV (0.84 μm).
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    Characterization of hard transparent B–C–N–H thin films formed by plasma chemical-vapor deposition at room temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3185-3189 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: B–C–N–H thin films were deposited by plasma chemical-vapor deposition with an external capacitively coupled reactor at an rf frequency of 13.56 MHz. The films were formed from a gas mixture of B2H6 (5.25 vol % in N2), methane, and argon or nitrogen as carrier gases. The deposition was carried out at room temperature and without heating the substrate. The films were transparent in the range of 10 000–2000-A(ring) wavelengths. The Knoop microhardnesses were 1825–3324 kg/mm2 and the refractive index was 1.3–1.6. An extensive discussion of the effect of the deposition conditions on both microhardness and film composition is given. In addition, the interrelation between the microhardness and composition is illustrated.
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    An analysis of second harmonic generation of surface waves in piezoelectric solids (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1867-1875 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solution for the initial spatial rate of growth of the second harmonic surface wave in arbitrarily anisotropic piezoelectric solids is obtained. The solution satisfies the nonlinear electroelastic differential equations and boundary conditions quadratic in the small field variables consistently to second order in the small amplitude of the input wave. The solution is obtained by means of a straightforward iterative procedure without making any ansatz. It turns out that the growing second harmonic surface wave has exactly the same amplitude ratios as the input surface wave. The expression for the initial slope of the second harmonic surface wave is obtained in the general anisotropic case.
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    Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1876-1885 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of Au/thermal oxide/p-InP metal-interfacial layer-semiconductor (MIS) junctions have been investigated. Thin InP thermal oxides are stable and in the dark are positively charged so as to increase the band bending and reduce the forward leakage currents in MIS junctions. Under illumination, photogenerated electrons are trapped in the oxide or near the oxide/InP interface such that MIS junctions exhibit photosuppression and hysteresis effects.
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    Binding energy of the screened exciton in two-dimensional systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1893-1897 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent optical nonlinearities in GaAs/Ga1−xAlxAs quantum well structures have been attributed to the screening of the electron-hole interaction in such structures by the free carriers generated. In this paper, we perform a variational calculation of the binding energy of the exciton confined in a two-dimensional structure, taking into account the screening of the Coulomb interaction between the electron-hole pair due to the free carriers. The screened potential used is that obtained by Stern and Howard for hydrogenic impurities in semiconducting inversion layers. We find that, although the binding energy of the exciton is reduced because of the presence of screening, the exciton remains bound even for fairly strong screening. This is in contrast to the 3-D case which occurs in bulk semiconductors where the presence of screening can prevent the electron-hole pair from forming an exciton. We have found that the optical absorption at the exciton peak also decreases as the screening increases.
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    Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-AlxGa1−xAs single quantum wells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1986-1989 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single quantum wells with ∼120-A(ring) GaAs wells and Al0.3Ga0.7As or GaAs-Al0.3Ga0.7As superlattice barriers were grown by molecular beam epitaxy under conditions known to produce very high-purity material. Low-temperature photoluminescence measurements indicate that the dominant recombination transitions are associated with free and bound excitons involving both light and heavy holes. A forbidden transition, possibly E21h, is also observed. The transition associated with electron-heavy-hole free excitons is most intense and has a linewidth of 0.3 meV at 2 K. The linewidths observed for these samples, grown with As4 species at 630 °C, are the smallest for 120-A(ring) single quantum wells and are close to theoretically calculated limits.
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    Excimer laser etching of polyimide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2036-2043 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is reported that thin films of polyimide are efficiently etched in air at pulsed excimer laser wavelengths of 248, 308, and 351 nm. Etch rate versus incident fluence data are found to obey a Beer–Lambert etching relation. Sharp laser fluence thresholds for significant etching are found to correlate with the wavelength-dependent absorption coefficient. The absorbed energy density required to initiate significant etching is found, within experimental error, to be independent of the wavelengths examined. It is felt that this information demonstrates the predominantly thermal nature of the laser etching mechanism. Additionally, infrared spectroscopy and coupled gas chromatography/mass spectroscopy were used to identify several gases evolved during pulsed laser etching of polyimide in both air and vacuum.
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    Electrical noise induced by unstable flow of elastic polymer solutions through capillaries (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2060-2063 
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    Topics: Physics
    Notes: Capillary flow of 0.3% aqueous solutions of poly(ethylene oxide), 4×106 MW, generates a fluctuating electrical signal (noise) between electrodes at the ends of the capillary. The frequency spectra of the noise are approximately of the 1/f α type. Within certain flow rate ranges, two sets of harmonic peaks appear in the spectra. It is shown that these peaks are associated with the transverse and longitudinal modes of motion of the elastic solution entering the capillary. This equivalence has been verified by frequency analysis of the intensity of a laser beam transmitted through the entry region, and by high-speed photography. The noise is assumed to reflect fluctuations in the streaming potential, caused by fluctuations in flow rate.
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    Absolute response and noise equivalent power of cyclotron resonance-assisted InSb detectors at submillimeter wavelengths (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2051-2059 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectra are presented of the responsivity and noise equivalent power (NEP) of liquid-helium-cooled InSb detectors as a function of magnetic field in the range 20–110 cm−1. The measurements are all made using a Fourier transform spectrometer with thermal sources. The results show a discernable peak in the detector response at the conduction electron cyclotron resonance (CCR) frequency for magnetic fields as low as 3 kG. The magnitude of responsivity at the resonance peaks is roughly constant with magnetic field and is comparable to the low-frequency hot-electron bolometer response. The NEP at the peaks is found to be comparable to the best long wavelength results previously reported. For example, we measure NEP=4.5×10−13 W/Hz1/2 at 4.2 K, 6 kG, and 40 cm−1. The InSb CCR will provide a much improved detector for laboratory spectroscopy, as compared with hot electron bolometers, in the 20–100 cm−1 range.
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    The existence of a new α'-HgI2 phase and its use for growing single crystals of α-HgI2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2070-2072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The existence of a new red α'-HgI2 phase that occurs in a narrow temperature range prior to melting has been established. This phase allows the growth of single crystals within its stability range, which after quenching retain their monocrystallinity and transform to α-HgI2. The method is used to prepare single crystals of any desired volume either pure or doped.
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    URL: http://dx.doi.org/10.1063/1.335966
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    Characterization of Si-SiO2 interface states: Comparison between transient capacitance and conductance techniques (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2077-2079 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance versus frequency technique [G(ω)] and deep level transient spectroscopy (DLTS) are both used to characterize Si-SiO2 interface states. However, no direct comparison between the two methods has yet been performed. We have performed a systematic study, with these two techniques of the same metal oxide semiconductor structures (Si-SiO2 on n- and p-type materials) made with various technologies and we have compared the performances of each technique: energy range accessible, energy resolution, sensitivity. We have shown that the conductance technique provides a density of states larger than the one obtained by DLTS, that its sensitivity and energy range are smaller. Its energy resolution is also smaller as illustrated by the fact that localized levels are detected by DLTS which are not with the conductance technique.
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    URL: http://dx.doi.org/10.1063/1.335969
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    Incoherent emission of an electron beam in a free electron laser rectangular waveguide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1432-1438 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calculation is presented of the incoherent radiation emitted by an electron beam of finite radius passing through a linearly polarized magnetic undulator in a rectangular waveguide with perfect conducting walls. This analysis is based on the Fourier component of the Lienard–Wiechert fields. The metallic boundary conditions are exactly incorporated in the formalism by means of the "image currents'' method. In the Fresnel approximation, we show that the double infinite sum over "images'' is transformed into one over "vertical modes,'' consisting of trigonometric functions. The discrete frequency spectrum and angular distribution of the radiation are studied for several energy spread and electron beam radius cases. The predicted radiation patterns provide useful diagnostics to determine the electron beam properties (trajectories, energy and angular spread, betatron oscillation). The amount of relative power emitted on each mode is a gaussian function exp(−an2).
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    URL: http://dx.doi.org/10.1063/1.336072
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    Resistivity, grain size, and impurity effects in chemically vapor-deposited tungsten films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2001-2007 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature electrical resistivity, grain size, and impurity content of tungsten films deposited at low pressure on silicon wafers from tungsten hexafluoride and hydrogen reactants were determined. These properties were examined as functions of deposition temperature and film thickness. The resistivity is independent of thickness at a value of approximately 13.5 μΩ cm for films deposited at 300 °C. For films deposited at 400 °C, the resistivity decreases from 24 to 8.5 μΩ cm as thickness increases from 0.075 to 1 μm. The resistivity behavior is interpreted in terms of grain-boundary scattering with a zero reflection coefficient for the 300 °C films. For the 400 °C films, a reflection coefficient that decreases from 0.67 to 0.38 over the above thickness range and a linear dependence of grain size on thickness are utilized. For both deposition temperatures, the grain size exhibits a rapid initial growth to 30 nm followed by growth at a slope of 0.32 with respect to thickness. The rapid initial growth is associated with the rapid, self-limiting tungsten hexafluoride/silicon reaction. The oxygen content of the films tracks the trend of the reflection coefficient in that it increases with increased deposition temperature or decreased film thickness. Evidence suggests that the oxygen is located predominantly at grain boundaries and may be the primary determinant of boundary scattering. Fluorine is found in films at concentrations (0.03–0.05 at. %) similar to those of oxygen but does not vary with thickness and decreases with increased deposition temperature. No evidence is found for surface scattering of carriers suggesting that all are specularly scattered. Grain-boundary scattering, with a constant reflection coefficient, adequately interprets previously published data. Utilizing such results, together with the present ones, leads to the conclusions that the grain size is relatively independent of deposition temperature while the intragrain resistivity decreases with temperature and approaches the bulk value for 600 °C deposition.
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    URL: http://dx.doi.org/10.1063/1.336010
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    Mechanism of hydrogen sensing in Pd-Si metal-insulator-semiconductor diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2044-2050 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance, conductance, and photoinduced current measurements have been made on Pd-Si metal-insulator-semiconductor diodes to define the mechanism by which these devices sense hydrogen. The results have been used to construct a model which is capable of describing the major features of the response of these diodes to hydrogen. The current flow is found to be majority carrier dominated, through interface states at the SiO2-Si interface. Changes in current under reverse bias upon exposure to hydrogen result from lowering of both the Schottky barrier and the oxide barrier height but not from changes in the interface density of states.
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    Note on solid-state reaction kinetics: The formation of silicides in ternary systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2073-2073 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decrease of the formation rate of Ni2Si from Ni-Cr alloys as opposed to its formation from pure Ni is analyzed in terms of a paper published by Carl Wagner in 1952. Some possible ternary diffusion effects are pointed out.
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    Order and disorder behavior of superparamagnetic particles of ferric hydroxysulfate seen through Mössbauer spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2080-2082 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A connection between the temperature behavior of the internal magnetic field and Mössbauer linewidth broadening for a system which exhibits superparamagnetism is proposed.
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    URL: http://dx.doi.org/10.1063/1.335970
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    Highly conductive and wide band gap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1427-1431 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped hydrogenated amorphous-microcrystalline mixed-phase silicon (μc-Si:H) films were prepared by the mercury photosensitized decomposition of a disilane-hydrogen gas mixture, by adding phosphine and diborane for n and p type, respectively. The maximum dark conductivity and optical band gap of the films were, respectively, 20 S cm−1 and ∼2.0 eV for n type, and 1 S cm−1 and 2.3 eV for p type. It is most significant that the gaseous ratio of hydrogen to disilane should be enhanced up to 70 for n type, and even 300 for p type, to obtain such a highly conductive and wide gap film. The crystallinity of the photodeposited μc-Si films appeared to be improved in comparison with that of films by conventional plasma glow discharge technique.
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    Phase modulation technique for eliminating phase noise in picosecond T2 measurements based on stimulated Raman gain (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1439-1449 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pump and probe variant of the stimulated Raman gain technique permits the measurement of picosecond dephasing times with low-power, continuous-wave mode-locked lasers, but it suffers by its susceptibility to inevitable randomly induced fluctuations in the relative phases of the interacting laser fields. The resulting severe requirements on optical stability can be circumvented through application of a double-modulation–detection scheme that we have developed. It is based on rms detection of the T2 signal as generated through application of a low-frequency phase modulation of precise amplitude, additional to the commonly applied rf modulation with corresponding lock-in detection. A detailed description of the method and its experimental realization is presented. T2 measurements on the 656 cm−1 vibration of liquid CS2 illustrate its performance. In comparison with previous techniques, precision is improved by about a factor of 4. But more important is the fact that the technique permits to make a continuous recording of the T2 signal, while achieving at the same time a reduction in measurement time by an order of magnitude. Furthermore, optimization of the optical setup is possible, through direct monitoring of the dephasing signal at any delay. Automating the data taking and processing should be straightforward.
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    Reduction of enhanced arcing by some electronegative gases (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1466-1469 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Activation or enhanced arc durations due to the presence of minute quantities of organic contaminants in low-current arcing atmospheres is becoming a problem in the reliability of the new generation of miniature relays sealed in plastic or metal containers. This article describes arc duration reduction by the addition of the electronegative gases, SF6 and C2Cl3F3 to the arcing atmosphere when part-per-million hydrocarbon impurities were present. The effects of hydrogen on the arc durations is also examined.
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    URL: http://dx.doi.org/10.1063/1.336077
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    Light scattering measurements of diffusional growth of precipitates in nickel- and cobalt-doped MgO (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1474-1482 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the sizes of second-phase precipitates in nickel- and cobalt-doped MgO single crystals have been examined in samples which were subjected to progressive thermal anneals at temperatures ranging from 600 to 1500 °C. Precipitate sizes and spatial locations were measured by means of light scattering before and after anneals in flowing argon. Absolute light scattering angular distribution measurements were used to obtain size distributions from a Mie theory deconvolution procedure. Comparison of the Ostwald ripening theory with the annealing time evolution of these precipitates indicates that the predominant growth can be described by a dislocation or grain boundary diffusion ripening mechanism. This mechanism is also consistent with ultramicroscope measurements taken before and after each anneal. The depletion region surrounding these ripening particles has been observed by means of backscattering in the measured angular distributions. Our results for diffusion within boundary regions are D'=(1.19±0.8×10−6 cm2/s)exp(−1.72 eV/kT) for nickel ions and D'=(1.60±0.9×10−7 cm2/s)exp(−1.36 eV/kT) for cobalt ions in MgO. These equations are in agreement with previous diffusion-couple measurements of nonenhanced diffusion in grain-boundary regions in these materials.
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    Magnetically sensitive InSb films prepared on SiO layers using hot-wire recrystallization (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2686-2690 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetically sensitive InSb films have been prepared by hot-wire recrystallization. A room-temperature magnetoresistance (MR) value of ΔR/R0=155%/1 T was obtained at 1 T with length to width ratio (L/W)=0.4. Samples were prepared by sequential deposition of In, InSb, and SiO onto unheated mica substrates. They were placed mica side toward the nichrome wire heater. The crystal properties of these films were investigated with a transmission electron microscope (TEM). The TEM investigations showed that single-crystal InSb films were grown from the SiO layer. This preparation technique is useful because effective MR elements with large area (20×30 mm) can be prepared without a complicated process and huge cost.
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    Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2691-2695 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric-pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin-layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight-binding calculation.
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    Optical properties of semiconducting iron disilicide thin films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2696-2703 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single-crystal silicon wafers and with low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light-sensitive and light-emitting thin-film devices within the silicon microelectronics technology.
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    Dangling bonds and the Urbach tail in silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2704-2708 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron spin resonance (ESR) and highly sensitive optical-absorption measurements have been performed on plastically deformed silicon, polycrystalline silicon, and high interface state density, oxidized silicon samples. In the first two cases, the response of the Urbach-like subgap optical absorption and the "dangling bond'' ESR signal following thermal and atomic hydrogen anneals is found to be distinctly different from that reported previously for polycrystalline silicon. These data suggest that transitions of the dangling bond are not responsible for this Urbach-like behavior. In addition, we find that removal of the interfacial silicon dangling bond by oxide stripping results in no measurable sample absorptance decreases, implying a considerably lower optical cross section than has been previously estimated for dangling bonds in the bulk.
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    Properties of amorphous germanium tunnel barriers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1584-1596 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of tunnel barriers made with amorphous Ge (a-Ge) deposited at approximately 80 K were studied in Al/a-Ge/Al tunnel junctions and also in junctions where one electrode was Ni or Fe. The conduction process was shown to be tunneling for barriers less than about 100 A at liquid He temperature and consistent with Mott variable-range hopping for higher temperatures and thicknesses. Measurements were made of current density J and dynamic conductance dJ/dV as a function of voltage V, thickness s, and temperature T. The measurements were compared with available theoretical expressions for rectangular tunnel barriers based on the WKB approximation. The applicability of these expressions for barrier heights less than 100 meV was examined and a modified equation for J(V) was derived which eliminated assumptions which are inaccurate for such low barriers. The measurements were also compared to this modified equation and to numerical solutions. Values for the effective tunnel barrier height ranging from 20 to 80 meV were obtained. Theoretical expressions for J(V) could be fitted to the measurements fairly well, but not perfectly; for J(T) the fit was poor. Values of s obtained using the modified expression for J(V) tended to be 10%–20% less than those measured by a quartz-crystal thickness gauge using the bulk crystal density. The conductance peaks corresponding to the peaks in the superconducting density of states were considerably broadened over Al/Al2O3/Al junctions either because of depairing of the Al films in contact with a-Ge or from an inelastic process in the barrier. No spin polarization of the tunnel currents was observed when one of the electrodes was Ni or Fe. Some measurements were made of a-Ge barriers treated with glow discharges in N2, O2, and H2. The properties of a-Ge were very similar to those previously found for a-Si. Evidently the basic conduction process in these junctions is tunneling, but the simple tunneling model cannot entirely explain the results. Various proposals to account for these divergences from the simple tunneling model are discussed.
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    Ion cluster emission and deposition from liquid gold ion sources (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2724-2730 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and deposition of molten gold droplets from needle-tip liquid metal ion sources was investigated. The Taylor cone was identified as the source of droplet emission. An upper limit of 8 μm for the virtual source size was measured. Gold films were deposited on silicon substrates. The deposited gold spots showed a peaked, axially symmetric, distribution with a half angle for droplet emission of ∼2° which was considerably smaller than the ion emission angle of ∼45°. Typical deposition fluxes were ∼5×105 μm3/s/sr with total deposition rates of ∼3×103 μm3/s and on an average droplet diameter of ∼1 μm at an emission current of 150 μA. Smaller diameter droplets are produced with decreasing emission current and angle. Gold films with a fine textured morphology suitable for submicron patterning were obtained at emission currents less than ∼135 μA.
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    Use of alpha sources for hydrogen analysis (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1680-1682 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nuclear recoil analysis for hydrogen in thin films is demonstrated using radioactive alpha particle sources.
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    Striations in CZ silicon crystals grown under various axial magnetic field strengths (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2731-2735 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inhibition of fluid flow instabilities in the melt by the axial magnetic field in Czochralski silicon crystal growth (AMCZ) is investigated precisely by a high-sensitivity striation etch in conjunction with temperature measurements. The magnetic field strength (B) was varied up to 4.0 kG, incremented mostly in 0.5-kG/2.5-cm crystal length. The convection flow was substantially suppressed at B≥1.0 kG. A low oxygen level of 2–3 ppm and a high resistivity of 400 Ω cm is achieved in the AMCZ silicon crystals at B≥1.0 kG. Random striations at B=0, characteristic of turbulent convection, assumed progressively a periodicity, indicative of oscillatory convection at 0.35〈B≤4.0 kG. The striation contrast or "intensity'' decreased steadily with the increase in B. At B=4 kG, most of the crystal was free of striations, although some weak, localized periodic striations persisted near the crystal periphery. Spreading-resistance measurement shows, however, a uniform dopant distribution in all crystal sections grown at 0.35〈B≤4.0 kG within a few percent.
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    Laser-based and thermal studies of stress corrosion in vitreous silica (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2736-2741 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crack-propagation rates in vitreous silica were monitored as specimens were heated thermally or irradiated by a laser beam. The laser was tuned to the OH bond vibration to determine the role of OH stretching in the dissociative chemisorption mechanism for stress corrosion of silica in moist environments. Laser radiation heated the silica near the crack tip but did not generate any bond-specific changes in crack velocity. For samples maintained in moist air, the propagation velocity decreases as temperature increases. The temperature dependence of crack velocity indicates that physisorption is an important step in stress corrosion, and a simple model of the process is proposed.
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    Propagation profile of ablation front driven by a nonuniform UV laser beam (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1674-1676 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial profile of ablation front is observed under the irradiation of spatially modulated 0.27-μm laser beam. Propagation depth of the ablation front is derived by means of various methods which detect x-ray radiation from aluminum substrates overcoated with polyethylene layers of different thicknesses. A higher mass ablation rate is observed for the UV laser than the longer wavelength lasers. However, observation with an x-ray television camera shows that the spatial nonuniformity in the laser beam is projected on the ablation front surface without substantial smoothing.
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    Conditions for self-sustained pulsation and bistability in semiconductor lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1689-1692 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conditions have been analyzed for the occurrence for self-sustained pulsations and bistabilities in semiconductor lasers having a saturable absorber region. It is shown that there are three crucial parameters, namely ratios of differential gain and carrier lifetime between amplifying region and absorbing region, and ratio of absorbing magnitude in absorbing region to the cavity loss. Ranges of these three parameters are determined in which bistabilities and self-sustained pulsations take place.
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    Levitation force acting on a three-dimensional static current source moving over a stratified medium (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2751-2758 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The levitation or suspension forces acting on an arbitrary three-dimensional dc current source moving over a stratified medium consisting of a track and the underlying earth are determined analytically for arbitrary relativistic velocities. The proposed method also allows the determination of the currents inside the track. As a first step towards the analysis of moving magnets, the obtained results are applied to a moving magnetic dipole.
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    Comment on "Transmit versus receive gains for microwave dish antennas [J. Appl. Phys. 54, 3528 (1983)]'' (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2761-2762 
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    ISSN: 1089-7550
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    Topics: Physics
    Notes: A theoretical paper published in this journal some months ago purported to analyze the performance characteristics of microwave dish antennas. The paper, however, contains three serious errors which totally negate the results described therein. In this communication the nature of these errors is explained and the proper corrections are indicated.
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    Erratum: Estimation of light-reflection-layer thickness by optical second-harmonic generation and Raman scattering from semiconductor superlattices [J. Appl. Phys. 57, 1500 (1985)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1706-1706 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
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    URL: http://dx.doi.org/10.1063/1.336316
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    Determination of the external magnetic field of systems containing two-dimensional semi-infinite plates and one finite cross-sectional plate (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1116-1119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Certain two-dimensional symmetrical systems of magnetic conductors, consisting of semi-infinite and finite plates are examined using a mapping method. Four examples are studied.
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    URL: http://dx.doi.org/10.1063/1.336123
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    Temperature distribution along the striped active region in high-power GaAlAs visible lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1124-1128 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Catastrophic degradation related to local heating in GaAlAs visible lasers occasionally occurs under relatively low optical output power. To develop highly reliable lasers, we used laser Raman spectroscope with an argon ion laser focused at about 1 μm(approximately-equal-to) to evaluate the local operating temperature rise not only at the facet surface, but also along the striped active region. The local operating temperature rise in the vicinity of the facet's active region increased exponentially up to 200 °C when the optical output power was 30 mW/facet. This high temperature causes the rapid formation of a dark region and final catastrophic degradation. The calculated temperature rise along the striped active region is about one-half of that of the facet. The internal operating temperature is far higher than the average temperature measured by the thermal resistance method, which is considered to be a large influence on the lifetime and activation energy of lasers in practical applications.
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    URL: http://dx.doi.org/10.1063/1.336125
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    Influence of the dynamic Stark effect on the small-signal gain of optically pumped 4.3-μm CO2 lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1141-1145 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results are presented which show that the dynamic Stark effect significantly reduces the small-signal gain (in discharge-excited CO2) and absorption (in unexcited CO2) at the line center of 4.3-μm laser lines directly coupled to 10.4-μm sequence-band pump transitions. In unexcited CO2, population transfer by the pump radiation is negligible and the influence of coherent effects can be observed unambiguously. The results of comparing experiment and theory in this simple case are used to modify a rate-equation model of the 4.3-μm gain dynamics, and the modified calculations are shown to be in good agreement with measured 4.3-μm gain coefficients.
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    URL: http://dx.doi.org/10.1063/1.336128
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    Spatial characteristics of the optogalvanic effect in striated rare-gas discharges (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1169-1176 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial variation of the optogalvanic (OG) signal resulting from visible laser irradiation of rare-gas positive column discharges has been investigated for the case of standing striations. The OG signal was observed to periodically change polarity as the laser was scanned transversly across the bright and (relatively) dark regions of the column. Transitions involving the 3P2,0 metastable levels were found to be everywhere opposite in polarity to those originating on freely radiating levels. The effects of trapped resonance level emission, and collisions of the second kind involving metastables are proposed to be important in determining the OG signal polarity for excitation in certain discharge regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336132
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    Temperature and stress dependence of Young's modulus in semiconducting barium titanate ceramics (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 702-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the temperature and stress dependence of Young's modulus in semiconducting barium titanate ceramics, the longitudinal sound velocity was measured at a frequency of 5 MHz in the temperature range of 20–180 °C. It is striking that at temperatures above the Curie point (Tc=120 °C) the sound velocity reaches values that are 10–20% higher than those at room temperature. Furthermore, a shift of the Curie point of about 2×10−8 K/Pa is observed if uniaxial stress is applied perpendicular to the sound propagation. Both effects can be understood by means of the phenomenological theory of Devonshire.
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    URL: http://dx.doi.org/10.1063/1.336185
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    Computation of fragment mass distributions for HF-1 steel explosive-filled cylinders (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1223-1228 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computations using a one-dimensional computer program have been performed to determine fragment mass distributions for exploding cylinders of HF-1 steel. Experiments were performed to guide the computations. Nucleation and growth models were used to simulate the brittle fracture and shear band damage that occurred in the metal cylinders prior to complete fragmentation. Material input parameters for these models have been previously determined. Computations were performed for two heat treatments of HF-1 steel. The calculated brittle crack and shear band distributions were converted to fragment mass distributions using one of the experimental fragment shapes. Based upon the experimental results, suggestions are made for future refinements in the area of fragmentation modeling.
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    URL: http://dx.doi.org/10.1063/1.336140
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    Geometric statistics and dynamic fragmentation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1210-1222 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present study is focused on the distributions in particle size produced in dynamic fragmentation processes. Previous work on this subject is reviewed. We then examine the one-dimensional fragmentation problem as a random Poisson process and provide comparisons with expanding ring fragmentation data. Next we explore the two-dimensional (area) and, less extensively, the three-dimensional (volume) fragmentation problem. Mott's theory of random area fragmentation is developed, and we propose an alternative application of Poisson statistics which leads to an exponential distribution in fragment size. Both theoretical distributions are compared with analytic and computer studies of random area geometric fragmentation problems, including those suggested by Mott, the Voronoi construction, a variation of the Johnson–Mehl construction, and several methods of our own. We find that size distributions from random geometric fragmentation are construction dependent, and that a conclusive choice between the two distributions cannot be made. A tentative application of the maximum entropy principle to fragmentation is discussed. The statistical theory is extended to include a concept of statistical heterogeneity in the fragmentation process. Finally, comparisons are made with various, dynamic fragmentation data.
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    URL: http://dx.doi.org/10.1063/1.336139
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    Durable metal carbide layers on steels formed by ion implantation at high temperatures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1255-1258 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power beams (4–10 W/cm2) of Ti ions have been used to heat Fe and steel substrates to 600–800 °C during high fluence (5×1017/cm2) implantation. Auger sputter depth profiles find a stoichiometric TiC surface layer, about 100 nm deep, graded continuously into both Fe and steel substrates. Secondary ion mass spectrometry of Fe and steels implanted in 13CO atmospheres indicate that the carbon originates from the bulk in carbon steels but from the atmosphere in Fe foils. Transmission electron microscopy reveals a continuous layer of fine-grained (50–100 nm) TiC crystallites in a preferred Baker–Nutting orientation relationship with respect to underlying Fe grains. Abrasive-wear measurements performed with diamond paste (1–5 μm) show the TiC layer on hardened M2 steel is 3–10 times more wear resistant than the substrate. Sliding-wear studies find an extremely durable layer that reduces friction by up to 60%, and increases by 50% the contact-stress threshold of M2 tool steel to boundary lubrication. The metallurgical processes responsible for the TiC layer will be discussed, and the advantages of this high-temperature treatment will be presented.
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    URL: http://dx.doi.org/10.1063/1.336117
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    Propagation of nonlocal elastic waves in a cylindrical hole containing a fluid (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2190-2194 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper deals with the propagation of elastic longitudinal waves in a cylindrical hole in an infinite space, the hole being filled with an ideal fluid. The Biot's problem is treated within the context of the nonlocal elasticity allowing one to extend the Biot solution to the domain of ultrashort waves. A numerical example is solved and illustrated by a graph.
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    URL: http://dx.doi.org/10.1063/1.335986
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    Supershallow levels in indium-doped silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2204-2207 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable temperature Hall-effect measurements on low-concentration Si:In samples show the existence of supershallow levels with an activation energy for ionization of about 18 meV. For high concentration Si:In samples, the levels at 18 meV tend to disappear and transform into levels with energy of about 160 meV.
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    Molecular beam epitaxial growth of GaAs on Si(211) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2195-2203 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth of GaAs on Si(211) has been investigated. Theoretical considerations had suggested the (211) orientation to be particularly suitable for the nucleation and growth of a zincblende-type compound semiconductor on a diamond-type elemental one. The experimental results support the theoretical prediction. Morphologies of thin (≤0.1 μm) (211) layers are substantially better than for (100) layers, which nucleate poorly and require large layer thicknesses ((approximately-equal-to)1μm) to yield good morphologies. When the (211) layer growth is initiated with a thin (GaAs/Al, Ga)As superlattice buffer (0.1 μm), consisting of 10 periods of 5+5 nm, the (211) morphology rivals that of GaAs(100) homoepitaxial growth. Chemical etching studies as well as transmission electron microscope investigations show the layers to have the (211)B orientation and to be free of antiphase domains, both as predicted. The (211) layers show strong photoluminescence at 4 K. Not intentionally doped layers are n type, with electron concentrations on the order of 2×1016 cm−3, except in the immediate vicinity of the Si interface. Some of the conduction parallel to the layer plane appears to take place on the Si side of the interface, where a two-dimensional electron gas seems to be present. The n-GaAs/p-Si heterojunctions themselves show excellent rectification characteristics and photosensitivity. It is concluded that the (211) orientation is almost certainly preferable to the (100) orientation for the growth of GaAs on Si.
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    Formation mechanism of drawing-induced E' centers in silica optical fibers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1356-1361 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation mechanism of drawing-induced E' centers in silica optical fibers is clarified by analyzing the thermodynamic behavior of point defects during the drawing process. The E' center concentration in the fibers is given by nd=np exp(−Ef/kTd−A/V1), where Td is the drawing temperature, V1 the drawing speed, and A a constant. The formation energy Ef is 3.8 eV while the precursor concentration np is 7×1022 g−1. The E' center concentration at the fiber surface is greater than that at the center because of the transverse difference in the quenching rate during the drawing process. The annealing behavior of the E' center concentration is expressed as nd(t)=nd(0)exp[−νt exp(−Ed/kTa)], where Ta is the annealing temperature. The activation energy for the motion of the E' centers Ed is 0.2 eV while the frequency factor ν is 8×10−3 sec.−1.
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    Deposition and characterization of p-type cadmium telluride films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1349-1355 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of CdTe films on foreign substrates by the direct combination of the elements in a gasflow system has the flexibility that the conductivity type and electrical resistivity of the film can be controlled by adjusting the composition of the reaction mixture. The deposition and properties of p-type CdTe films are emphasized in this paper because of its importance in thin-film solar cells. Graphite, W/graphite, mullite, and Corning 7059 glass were used as substrates for the deposition process. While CdTe films deposited on W/graphite and mullite substrates could be n or p type, depending on the composition of the reaction mixture, all films deposited on graphite substrates were p type, irrespective of the reactant composition, substrate temperature, or the purification of graphite, suggesting that carbon is electrically active in CdTe. The resistivity of p-type CdTe films on W/graphite and mullite substrates has been controlled for the first time by (1) using a Cd-deficient reaction mixture, and (2) adding dopants (AsH3 or PH3) to the reaction mixture. The resistivity versus composition relation was studied in detail. The optical properties of nearly stoichiometric, Cd-deficient and Te-deficient CdTe films were also investigated.
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    Photoluminescence study of confined electron hole plasma in GaxIn1−xAs heterostructures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 948-953 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy photoluminescence (PL) emission is observed in GaxIn1−xAs heterostructures. The emission originates from an electron-hole plasma (EHP) confined in a 500 A(ring) GayIn1−yAs layer between the InP substrate and a wider band gap GaxIn1−xAs layer. A line-shape analysis of the EHP emission yields electronic temperatures which essentially coincide with the bath temperature. Linear polarization of the PL was observed which indicates a degree of strain in the confining layer. Studies in a magnetic field indicate that the carrier transport in the heterostructure studied is via free carriers and not via excitons.
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    URL: http://dx.doi.org/10.1063/1.336171
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    Formation and thermal stability of CoSi2 on polycrystalline Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 971-978 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high temperature stability of CoSi2/polycrystalline-Si/SiO2 structures has been explored by techniques of Rutherford backscattering, scanning, and transmission electron microscopy. Results indicate that the silicide formed by reacting 400 A(ring) of Co with 3300 A(ring) of poly-Si is metallurgically stable up to 30 min at 900 °C. A 30-min 1000 °C sinter causes intermixing of the silicide/Si phase, although the SiO2 layer is not visibly damaged. More severe forming-gas anneals result in Si loss from the metallization and a complete destruction of the multilayered geometry. This Si loss can be prevented by sintering in a partially oxidizing ambient, which forms an encapsulating SiO2 surface layer. The stability of co-sputtered films on Si is critically dependent on the as-deposited Si/Co ratio. Si/Co2 are both unstable for temperature excursions in excess of 800 °C. In contrast, Si/Co(approximately-equal-to)2 composites form stable co-sputtered silicides with thermal characteristics similar to those of thin Co on polycrystalline Si.
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    URL: http://dx.doi.org/10.1063/1.336176
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    Production of relativistic, rotating electron beams by gyroresonant rf acceleration in a TE111 cavity (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4501-4508 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rf acceleration of moderate current ((approximately-less-than)1 A) electron beams to 500 keV in a TE111 cylindrical cavity resonator is described. Experimental results are compared with theory. rf to beam energy conversion efficiencies in excess of 50% have been observed. The resultant axis-encircling beam with a large ratio of perpendicular velocity to longitudinal velocity is ideal as a driver for a high-harmonic gyrotron.
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    URL: http://dx.doi.org/10.1063/1.336262
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    Electrohydrodynamically driven large-area liquid-metal ion sources (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4509-4511 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Application of electrohydrodynamic instability theory to a planar liquid-lithium surface suggests that liquid lithium may provide a large-area ion source for intense ion-beam diodes. Such a source could uniformly produce ions on a nanosecond time scale if the applied electric field exceeds 10 MV/cm. Wavelengths and growth times of the most rapidly growing instability have been calculated to first order as a function of applied electric field. Results have been interpreted in the context of an ion source for a light ion-beam driver for inertial confinement fusion.
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    URL: http://dx.doi.org/10.1063/1.336263
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    Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 983-986 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped, phosphorus-, and boron-doped microcrystalline silicon films were prepared by rf reactive sputtering, and their properties were investigated through structural, optical, and transport measurements. The merits of microcrystalline films for the p and n contacts in photovoltaic devices were demonstrated through the fabrication of single and tandem p-i-n solar-cell structures with best efficiencies between 5 and 6%.
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    URL: http://dx.doi.org/10.1063/1.336145
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    Laser-assisted chemical vapor deposition of Si: Low-temperature (〈600 °C) growth of epitaxial and polycrystalline layers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 979-982 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF laser irradiation (248-nm or 5-eV photons) during the chemical vapor deposition of Si from SiH4 has been used to periodically melt and rapidly resolidify thin layers of continuously deposited material. From one-dimensional heat-flow calculations, the increase in the average film growth temperature for the conditions used in these experiments was less than 1° C, the melt depth ranged from ∼5 to 40 nm, and the resolidification velocity was 2 to 3 ms−1. By proper choice of laser energy density E, pulse repetition rate f, and film deposition rate R, the melt depth was adjusted to correspond to a value slightly larger than the film thickness deposited between pulses. Using this procedure, we have grown polycrystalline Si films on SiO2 and Si single crystals on (100)Si substrates at average growth temperatures Ts between 535 and 650 °C. The polycrystalline films had average grain sizes of 1 to 2 μm with a (111) preferred orientation. Films grown without laser irradiation, but otherwise under the same conditions, were amorphous at Ts〈580 °C and fine-grained polycrystalline at higher temperatures. The room-temperature conductivity of irradiated In-doped polycrystalline films grown at Ts=565 °C was ∼5 orders of magnitude higher than the conductivity of unirradiated films. Irradiated single-crystal films doped with B exhibited room-temperature hole mobilities which were near the maximum theoretical bulk values for the corresponding carrier concentrations (∼1018 cm−3).
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    Decay kinetics of photoconductivity of PbSnTe doped with indium (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4618-4620 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal decay of persistent photoconductivity in PbSnTe films doped with indium were fit using a phenomenological model featuring a quasi-Fermi level-dependent activation energy. The resulting decay curves are nonexponential with a very fast initial relaxation followed by a slower decay due to an increase in the effective activation energy as the quasi-Fermi level decreases. Numerical solutions to the rate equation governing the relaxation were used to fit the data with excellent results. The activation energy in the limit of low carrier densities is found to be 24 meV.
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    Artificial oxide barriers for NbN tunnel junctions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4638-4642 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting tunnel junctions have been prepared with NbN-base electrodes, oxidized Al or Mg tunnel barriers, and NbN or Pb counterelectrodes. The tunnel barriers were formed either by thermal oxidation at room temperature or by subjecting the thin overlayers of Al or Mg to a low-energy ion beam in an argon-5% oxygen background. High-quality junctions with Pb counterelectrodes were produced by either method. However, for junctions with NbN counterelectrodes deposited at room temperature, the thermal oxidation resulted in shorts and the ion-beam oxidation resulted in low-leakage junction. X-ray photoelectron spectroscopy measurements of the NbN artificial-oxide bilayers showed that the ion-beam treatment increased the aluminum oxide thickness by the minimum detectable increment, approximately 0.2 nm, and increased the MgO thickness by 1 nm. The superconducting energy gap inferred for NbN counterelectrodes was typically half as large as the gap of the NbN base. Limitations on the gap values of NbN counterelectrodes grown on these barriers were established by measuring the energy gap of films as thin as 7.5 nm.
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    Experimental study of laser-induced cavitation bubbles (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 651-652 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The focused beam from a Nd:YAG laser (λ=0.532 μm) is used to generate cavitation bubbles in water. Optics of short focal length have been shown to be the most suitable for producing a single bubble in a definite place. Some typical photographs of bubbles obtained are presented. These prove that the laser is a useful tool for the study of simulated cavitation in the laboratory.
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    Distributions of light ions and foil destruction after irradiation of organic polymers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 668-676 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that light ions (6Li, 10B) distribute neither according to their calculated range nor to their nuclear damage distributions but according to their ionization distributions after implantation into organic polymers. Also, the profile of chemical destruction after low dose light ion implantation (typically 1012–1014 ions/cm2) into organic foils obeys the ionization distribution rather than the range or nuclear damage distributions. After annealing, or at higher implanted doses, a slight shift of the implantation or destruction profiles towards the nuclear damage distribution is found. The reason for this implantation behavior may be partly understood in terms of diffusion and subsequent recombination with the created radicals. Li and B distributions in carbon (which may be regarded as the final product of polymer destruction) show a shape which can be described by range profiles with subsequent diffusion and trapping at homogeneously distributed defects. In contrast to light ions, implanted heavy ions distribute in polymers essentially according to their range profiles, due to negligible diffusion after implantation.
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    Shock viscosity and the prediction of shock wave rise times (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 692-701 
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    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present study is focused on viscouslike behavior of solids during large-amplitude compressive stress-wave propagation. Maximum strain rate in the plastic wave has been determined for 30 steady- or near steady-wave profiles obtained with velocity interferometry methods. The materials include six metals, aluminum, beryllium, bismuth, copper, iron, and uranium, and two insulating solids, magnesium oxide and fused silica. A plot of Hugoniot stress versus maximum strain rate for each material is adequately described by η(overdot)=aσmh. The exponent m is approximately 4 for all materials while the coefficient a is material dependent. A model is developed which incorporates the observed trends of the shock viscosity data in a three-dimensional framework. Finite-difference calculations using the model reproduce the experimental wave profile data.
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    URL: http://dx.doi.org/10.1063/1.336184
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    Oxidation-enhanced diffusion of ion-implanted boron in heavily phosphorus-doped silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 711-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation-enhanced diffusion (OED) of ion-implanted boron in heavily phosphorus-doped silicon is studied by measuring boron depth profiles using secondary ion mass spectroscopy for phosphorus concentration from intrinsic conditions to 1.2×1020 cm−3. OED is observed for the whole phosphorus concentration range investigated in the present work. However, both the diffusion coefficient in N2 ambient DN and that in dry O2 ambient DO decrease with an increase in substrate phosphorus concentration in extrinsic conditions, i.e., for phosphorus concentration larger than the intrinsic carrier concentration. Diffusion coefficient increment due to OED ΔD(=DO−DN) decreases with an increase in phosphorus concentration. The decrease in ΔD with an increase in phosphorus concentration is attributed to a decrease in excess silicon interstitials due to recombination with acceptor-type vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336311
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    Effects of composition and structure on electromigration kinetics in aluminum-alloy thin films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 723-727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in time to failure data for electromigration processes have shown the importance to conductor design of factors that include composition, grain size, and passivation thickness. Traditionally, these variables have been studied separately. An understanding of the combined effects of these variables is necessary to design reliable conductors. Temperature-ramp resistance analysis to characterize electromigration (TRACE) has been applied to sample groups in which composition, passivation thickness, and grain size were varied. The results of these experiments provide the kinetic parameters for electromigration, and from these values, a calculation is proposed that allows an estimate of the conductors' resistance to electromigration. The results suggest that the predominant factor controlling electromigration rates is the passivation thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336189
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  • 99
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    The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 757-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of CdTe were grown on CdTe and InSb substrates by metalorganic chemical vapor deposition using dimethylcadmium and dimethyltelluride as alkyl sources. Specular CdTe layers were grown on InSb at temperatures between 350 and 375 °C with serious out-diffusion of In from substrates. Dimethyltelluride is the controlling species of this growth system. Typical growth rates were 4 to 7 μm/h. Low-temperature photoluminescent measurements revealed the superior quality of epitaxial layers grown on CdTe substrates. The bound-exciton emission at 1.590 eV and the band-edge emission at 1.548 eV are the dominant peaks. Homostructure CdTe epitaxial layers grown between 330 and 410 °C possess the best surface morphology. Hole concentrations in the 1013-cm−3 range and a carrier mobility over 100 cm2/V sec were observed in these layers at 77 K. The highest hole mobility is 555 cm2/V sec in the sample grown at 400 °C. Layers grown outside this range show n-type conductivity with deteriorated electron mobilities and photoluminescent spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336193
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    Effect of UV laser preionization on CO2-laser-induced optical breakdown (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4003-4005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of UV preionization by a KrF laser on CO2-laser-induced optical breakdown is studied experimentally. The electron number density as well as the breakdown probability is measured as a function of KrF-laser energy. The results show that the KrF-laser preionization is quite effective in initiating the optical breakdown. Once a breakdown is initiated, however, the number of produced electrons is found to be independent of the KrF-laser energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335577
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