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  • Articles  (6)
  • 73  (6)
  • 2010-2014
  • 1980-1984  (6)
  • 1950-1954
  • 1980  (6)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
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  • Articles  (6)
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  • 2010-2014
  • 1980-1984  (6)
  • 1950-1954
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Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Physics  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Experimental study of quantum size effects in very thin metal films (1980)
    Springer
    Applied physics 21 (1980), S. 397-406 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 79.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of the quantum size effect (QSE) in very thin Pd and Au films (0.5〈d〈10 [nm]) deposited on glass tips is studied by means of field emission at various anode potentials. The thickness-dependent field emission current characteristics show short periodic variations with a period of about 0.3 nm for both Pd and Au. The measured QSE oscillations and their amplitudes differ strongly from those expected qualitatively from model calculations for the smallest thicknesses. A model for the metal film based on a modification of the uniform background model is presented, and the thickness dependence of the conductance and the field emission current density are qualitatively discussed. Possible explanations of some discrepancies between calculations and the measured field emission current characteristics are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895932
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  • 2
    Electronic Resource
    Electronic Resource
    An investigation of the Al2O3-CdSe interface in accumulation (1980)
    Springer
    Applied physics 23 (1980), S. 327-331 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30 ; 06
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914919
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  • 3
    Electronic Resource
    Electronic Resource
    A model for the off-on transition in thin ZnTe films (1980)
    Springer
    Applied physics 21 (1980), S. 249-255 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 65 ; 02
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin ZnTe films show memory switching characteristics. The transition between the high-resistive off-state and the low-resistive on-state is explained here as a thermal instability. To describe this, an electro-thermal model differing from the existing ones is worked out for the specific case of a ZnTe-on glass structure. The numerically obtained results agree well with the measured off-on transition parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886175
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  • 4
    Electronic Resource
    Electronic Resource
    Photoelectron-spectroscopy investigation and electronic properties of LiNbO3 crystal surfaces (1980)
    Springer
    Applied physics 21 (1980), S. 345-352 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electronic properties of Ar-ion and electron bombarded single-crystal surfaces of LiNbO3 have been investigated at room temperature by ultraviolet photoelectron spectroscopy (UPS) and x-ray excited photoelectron spectroscopy (XPS). In crystals reduced in this way, the loss of oxygen is accompanied with a loss of lithium and the creation of Nb4+ and Nb3+ ions. The relative concentrations of the various defects have been determined from their corresponding XPS core line spectra. When surface defects are produced an emission in the region of the bulk band gap appears. This gap emission is identified as arising from Nb 4d electrons due to the reduction of Nb5+ ions to Nb4+ and Nb3+ ions. The different behaviour of the gap emission upon surface treatment in the UPS and the XPS spectra is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895926
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors (1980)
    Springer
    Applied physics 22 (1980), S. 145-148 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors havingn-channel inversion layers under the weak electric-field limit. It is found, takingn-channel InSb as an example, that both the MOS and surface capacitances show spiky oscillations with changing magnetic field. It is further observed that the sharpness and the depths of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885997
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  • 6
    Electronic Resource
    Electronic Resource
    Variations in thermoelectric power of thin monocrystalline films with conductivity (1980)
    Springer
    Applied physics 23 (1980), S. 357-359 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 72.15 ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Starting from the bi-dimensional model for grain boundaries in monocrystalline thin films, the difference in thermoelectric power is expressed in terms of conductivity and energy dependence of the bulk electronic mean free pathU. A new procedure is suggested for measuringU.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00903216
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