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  • Articles  (32)
  • 79.20  (16)
  • 82.50  (16)
  • Springer  (32)
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
  • 1975-1979  (32)
  • 1977  (32)
Collection
  • Articles  (32)
Publisher
  • Springer  (32)
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
Years
  • 1975-1979  (32)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 137-148 
    ISSN: 1432-0630
    Keywords: 71.50 ; 72.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 205-207 
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dependence of depth resolution on sputter depth due to various parameters is theoretically estimated. Comparison with experimental work of different authors shows the validity of the proposed model.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 261-266 
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ar+ induced Auger electrons from Si and Ar were investigated at bombardment energies between 3–15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. “Bulk like” and “atomic like” Auger transitions of ion induced Auger electrons of Si were observed.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 287-290 
    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Aqueous solutions of some fluorescent metal complexes of three compounds containing the methyleneiminobisacetic acid group have been found to show lasing when tested on a pulsed nitrogen laser. Degradation constants for lasing of one of the complexes and of the corresponding uncomplexed dye have been determined by coaxial flashlamp pumping.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 391-393 
    ISSN: 1432-0630
    Keywords: 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 265-276 
    ISSN: 1432-0630
    Keywords: 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low pressure SF6 with its isotopes in natural abundance was irradiated by a pulsed CO2 laser operated on theP20 line (10.6 μm band). Dissociation yields of32SF6 and34SF6 were measured separately. If the radiation is focussed into the cell, the dissociation yield is proportional to the 3/2 power of the laser energy, as was derived under general conditions and confirmed experimentally. The reaction probabilityP(Φ), the fraction of molecules dissociated by an energy flux Φ, was measured using parallel light. For both isotopes,P(Φ) saturates at high energy flux close toP=1. At a lower flux (2 J cm−2), the dissociation probability of32SF6 displays a threshold, whereas the dissociation probability of34SF6 is a very steep function of Φ over the whole range of fluxes.P(Φ) at the higher energy flux was measured in a cavity absorption cell, in which up to 80% of the molecules were dissociated by a single pulse. Below 0.2 mbar SF6 the dissociation yields for both isotopes are pressure independent. Above 2 mbar the isotopic selectivity is completely lost. Addition of hydrogen always decreases the dissociation yields.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 47-49 
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering or ion impact desorption of adsorbed layers can be directly investigated by low-energy ion scattering. Because of its specific sensitivity to surface atoms, this method provides the possibility of monitoring the decrease of the signal from the adsorbate or the increase of the signal from the substrate. Both signals were studied with He+ backscattering from the system O on Ni (110). The measured desorption cross-sections and the principal implications for both ways of observation are discussed. The use of the substrate signal for the desorption study can be of major advantage, particularly in the case of light adsorbates.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 97-99 
    ISSN: 1432-0630
    Keywords: 42.55 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract First cw laser oscillation with thresholds below 1 mW was observed for various B1Пu → X1 ∑ g + transitions of diatomic molecular sodium excited by different argon laser lines in the range of 454–488 nm. For pump powers of 0.5 W output powers up to 3 mW and single-pass gain up to 0.1 cm−1 were obtained. Some properties of the heat pipe laser system are discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 267-269 
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract P-terphenyl in cyclohexane, has been pumped by a KrF laser in a longitudinal configuration. Dye laser pulses of 11 mJ, 1 MW were obtained with over 10% conversion efficiency. N2 purge of the dye solution is shown to increase the conversion efficiency. The tuning curve between 321.8 nm and 365.3 nm is presented.
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  • 10
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The application of a retarding-dispersive energy analyzer as the pre-filter of a quadrupole mass analyzer has made it possible to combine a standard high-speed Secondary Ion Mass Spectrometer (SIMS) and a high-resolution secondary-ion energy analyzer into one instrument. Data taken with this instrument indicate the presence of very significant high-energy tails in the energy distribution of all observed secondary ions, even with relatively low (2 keV) primary ion energies. The shape of the energy distribution varies widely from element to element, for atomic compared to molecular species sputtered from a clean metal surface, and depends, for a given species sputtered from a metal surface, on the degree of surface oxidation. The variations established in the present work are large enough to introduce in many cases substantial discrepancies between published values of both relative ion sputtering yields and surface elemental concentrations and values obtained by considering the complete energy distribution. Methods of obtaining accurate secondary ion yields by integrating the energy distribution are discussed.
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