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  • 79.20  (16)
  • Springer  (16)
  • American Chemical Society
  • Wiley
  • 1975-1979  (16)
  • 1977  (16)
Sammlung
Schlagwörter
Verlag/Herausgeber
  • Springer  (16)
  • American Chemical Society
  • Wiley
Erscheinungszeitraum
  • 1975-1979  (16)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Electronic conduction mechanisms of Cs- and B-implanted SiO2-films (1977)
    Springer
    Applied physics 12 (1977), S. 137-148 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.50 ; 72.20 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00896139
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  • 2
    Digitale Medien
    Digitale Medien
    Depth resolution in sputter profiling (1977)
    Springer
    Applied physics 13 (1977), S. 205-207 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dependence of depth resolution on sputter depth due to various parameters is theoretically estimated. Comparison with experimental work of different authors shows the validity of the proposed model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882481
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  • 3
    Digitale Medien
    Digitale Medien
    3 to 15 keV Ar+ induced Auger electron emission from Si and Ar (1977)
    Springer
    Applied physics 13 (1977), S. 261-266 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Ar+ induced Auger electrons from Si and Ar were investigated at bombardment energies between 3–15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. “Bulk like” and “atomic like” Auger transitions of ion induced Auger electrons of Si were observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882890
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  • 4
    Digitale Medien
    Digitale Medien
    Lattice location of lead implanted into silicon at room temperature (1977)
    Springer
    Applied physics 13 (1977), S. 391-393 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882616
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  • 5
    Digitale Medien
    Digitale Medien
    A contribution to the investigation of ion impact desorption by ion scattering (1977)
    Springer
    Applied physics 13 (1977), S. 47-49 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Sputtering or ion impact desorption of adsorbed layers can be directly investigated by low-energy ion scattering. Because of its specific sensitivity to surface atoms, this method provides the possibility of monitoring the decrease of the signal from the adsorbate or the increase of the signal from the substrate. Both signals were studied with He+ backscattering from the system O on Ni (110). The measured desorption cross-sections and the principal implications for both ways of observation are discussed. The use of the substrate signal for the desorption study can be of major advantage, particularly in the case of light adsorbates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00890719
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  • 6
    Digitale Medien
    Digitale Medien
    Relative ion sputtering yield measurements by integration of secondary ion energy distribution using a retarding-dispersive Ion energy analyzer (1977)
    Springer
    Applied physics 14 (1977), S. 89-97 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The application of a retarding-dispersive energy analyzer as the pre-filter of a quadrupole mass analyzer has made it possible to combine a standard high-speed Secondary Ion Mass Spectrometer (SIMS) and a high-resolution secondary-ion energy analyzer into one instrument. Data taken with this instrument indicate the presence of very significant high-energy tails in the energy distribution of all observed secondary ions, even with relatively low (2 keV) primary ion energies. The shape of the energy distribution varies widely from element to element, for atomic compared to molecular species sputtered from a clean metal surface, and depends, for a given species sputtered from a metal surface, on the degree of surface oxidation. The variations established in the present work are large enough to introduce in many cases substantial discrepancies between published values of both relative ion sputtering yields and surface elemental concentrations and values obtained by considering the complete energy distribution. Methods of obtaining accurate secondary ion yields by integrating the energy distribution are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882637
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  • 7
    Digitale Medien
    Digitale Medien
    Study of non-radiative silicon deexcitation in an oxygen atmosphere using the differential measurement of the excited state lifetimes (1977)
    Springer
    Applied physics 14 (1977), S. 303-311 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 82.65 ; 79.20 ; 34
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Having developed a new method of differential lifetime measurement using atomic ionoluminescence as an excitation process, we applied this method to a monocrystaline silicon sample in an oxygen atmosphere of variable pressure. We found decreased values of the experimental lifetimes concerning levels 4s 3 P 0 and 4s 1 P 0, which are more marked when the oxygen pressure increases. This tends then towards a saturation of the observed phenomenon. We propose, in agreement with other authors, an explanation which is based on the existence of non-radiative deexcitations. We present also a mathematical model for calculating this transition effect on the lifetime measurements. We consider that it is possible to take advantage of this experimental lifetime variation to determine a parameter of the model which characterises the non-radiative deexcitations. This measuring method appears to be a simple and original procedure for the study of certain nonradiative transitions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882736
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  • 8
    Digitale Medien
    Digitale Medien
    On the influence of backscattered electrons on the lateral resolution in scanning auger microscopy (1977)
    Springer
    Applied physics 14 (1977), S. 351-354 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.20 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A definition of edge resolution is proposed, which is adapted to the pecularities of scanning Auger microscopy. Based on recent monte-Carlo computer simulations for scanning electron microscopy, the influence of backscattered electrons on the edge resolution is estimated for low-Z (Al) and high-Z materials (Au). The resolution is found to be of the order of 100nm and to be nearly independent of the atomic number of the sample.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00883438
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  • 9
    Digitale Medien
    Digitale Medien
    Sputtered neutral mass spectrometry (SNMS) as a tool for chemical surface analysis and depth profiling (1977)
    Springer
    Applied physics 14 (1977), S. 43-47 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An experimental system for mass spectrometry of supttered neutral particles involving a hf plasma operated in Ar at several 10−4 Torr is described. The potentialities of the method for quantitative surface analysis are reasoned. Depth profiling by sputtered neutral mass spectrometry is demonstrated for anodic oxide layers on Nb and Ta.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00882632
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  • 10
    Digitale Medien
    Digitale Medien
    ESCA studies on changes in surface composition under ion bombardment (1977)
    Springer
    Applied physics 12 (1977), S. 101-112 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The influence of ion bombardment on the composition of surfaces was investigated by means of ESCA. The bombardment of metal oxides with inert gas ions results, not only in sputtering of the surface, but also in reduction of the oxides. The rate of reduction is particularly high when the oxide/metal interface is within the range of the bombarding ions. Ion induced reduction was found in oxide layers, thinner than the escape depth of the photoelectrons, on Mo, W, Nb, Ta, Ti, Zr, Si, and Bi. The relationship between reduction phenomena, on the one hand, and the ion energy, angle of incidence, mass of the gas used for bombardment, and ion current density, on the other hand, was investigated in the case of the Mo/Mo-oxide system. Ion bombardment of surfaces may also result in the formation of new compounds. Two examples of this are the formation of carbides through the bombardment of contaminated surfaces and the ion induced formation of C-F compounds from a mixture of K2SiF6 and carbon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00900076
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