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  • 79.20  (16)
  • Springer  (16)
  • Macmillan Magazines Ltd.
  • PANGAEA
  • 1995-1999
  • 1980-1984
  • 1975-1979  (16)
  • 1977  (16)
Collection
Keywords
Publisher
  • Springer  (16)
  • Macmillan Magazines Ltd.
  • PANGAEA
Years
  • 1995-1999
  • 1980-1984
  • 1975-1979  (16)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Raster scanning depth profiling of layer structures (1977)
    Springer
    Applied physics 12 (1977), S. 149-156 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Implications in the use of the electronic gating scheme in depth profiling studies of layer structures by means of raster scanning secondary ion mass spectrometry are investigated. The profile of the sputtering crater and the intensity variation after break-through are calculated with the scan width and the gate width as parameters. Thick (5.6 μm) magnetic garnet layers grown an a non-magnetic garnet substrate were used for depth profiling measurements. A relative depth resolution of 1% could be obtained. Comparison of experimental results with calculated data shows excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896140
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  • 2
    Electronic Resource
    Electronic Resource
    Relative ion sputtering yield measurements by integration of secondary ion energy distribution using a retarding-dispersive Ion energy analyzer (1977)
    Springer
    Applied physics 14 (1977), S. 89-97 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The application of a retarding-dispersive energy analyzer as the pre-filter of a quadrupole mass analyzer has made it possible to combine a standard high-speed Secondary Ion Mass Spectrometer (SIMS) and a high-resolution secondary-ion energy analyzer into one instrument. Data taken with this instrument indicate the presence of very significant high-energy tails in the energy distribution of all observed secondary ions, even with relatively low (2 keV) primary ion energies. The shape of the energy distribution varies widely from element to element, for atomic compared to molecular species sputtered from a clean metal surface, and depends, for a given species sputtered from a metal surface, on the degree of surface oxidation. The variations established in the present work are large enough to introduce in many cases substantial discrepancies between published values of both relative ion sputtering yields and surface elemental concentrations and values obtained by considering the complete energy distribution. Methods of obtaining accurate secondary ion yields by integrating the energy distribution are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882637
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  • 3
    Electronic Resource
    Electronic Resource
    Sputtered neutral mass spectrometry (SNMS) as a tool for chemical surface analysis and depth profiling (1977)
    Springer
    Applied physics 14 (1977), S. 43-47 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental system for mass spectrometry of supttered neutral particles involving a hf plasma operated in Ar at several 10−4 Torr is described. The potentialities of the method for quantitative surface analysis are reasoned. Depth profiling by sputtered neutral mass spectrometry is demonstrated for anodic oxide layers on Nb and Ta.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882632
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  • 4
    Electronic Resource
    Electronic Resource
    The structure of theL 2,3 VV-auger line of silicon and silicon compounds (1977)
    Springer
    Applied physics 14 (1977), S. 283-287 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract TheL 2,3 VV Auger transitions of Si, SiO2, and SiC have been measured and compared with the self-fold electron density of states. The data indicate that Auger matrix effects must be included to explain the structure of the Auger lines. A comparison with soft X-ray measurements of Wiech shows, that the measured Auger line shape is nearly identical with the self-foldK β emission band. The selection rules for X-ray emission lead then to the conclusion that mostlyp-like valence electrons are involved in the Auger transition. This result indicates the relative importance ofs andp states in Auger transitions which is in accordance with theoretical calculations of Feibelman et al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882733
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  • 5
    Electronic Resource
    Electronic Resource
    A contribution to the investigation of ion impact desorption by ion scattering (1977)
    Springer
    Applied physics 13 (1977), S. 47-49 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering or ion impact desorption of adsorbed layers can be directly investigated by low-energy ion scattering. Because of its specific sensitivity to surface atoms, this method provides the possibility of monitoring the decrease of the signal from the adsorbate or the increase of the signal from the substrate. Both signals were studied with He+ backscattering from the system O on Ni (110). The measured desorption cross-sections and the principal implications for both ways of observation are discussed. The use of the substrate signal for the desorption study can be of major advantage, particularly in the case of light adsorbates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00890719
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon (1977)
    Springer
    Applied physics 14 (1977), S. 189-191 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in 〈100〉 silicon crystal using the channeling effect technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883088
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  • 7
    Electronic Resource
    Electronic Resource
    Study of non-radiative silicon deexcitation in an oxygen atmosphere using the differential measurement of the excited state lifetimes (1977)
    Springer
    Applied physics 14 (1977), S. 303-311 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 79.20 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Having developed a new method of differential lifetime measurement using atomic ionoluminescence as an excitation process, we applied this method to a monocrystaline silicon sample in an oxygen atmosphere of variable pressure. We found decreased values of the experimental lifetimes concerning levels 4s 3 P 0 and 4s 1 P 0, which are more marked when the oxygen pressure increases. This tends then towards a saturation of the observed phenomenon. We propose, in agreement with other authors, an explanation which is based on the existence of non-radiative deexcitations. We present also a mathematical model for calculating this transition effect on the lifetime measurements. We consider that it is possible to take advantage of this experimental lifetime variation to determine a parameter of the model which characterises the non-radiative deexcitations. This measuring method appears to be a simple and original procedure for the study of certain nonradiative transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882736
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  • 8
    Electronic Resource
    Electronic Resource
    On the influence of backscattered electrons on the lateral resolution in scanning auger microscopy (1977)
    Springer
    Applied physics 14 (1977), S. 351-354 
    Details
    ISSN: 1432-0630
    Keywords: 68.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A definition of edge resolution is proposed, which is adapted to the pecularities of scanning Auger microscopy. Based on recent monte-Carlo computer simulations for scanning electron microscopy, the influence of backscattered electrons on the edge resolution is estimated for low-Z (Al) and high-Z materials (Au). The resolution is found to be of the order of 100nm and to be nearly independent of the atomic number of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883438
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  • 9
    Electronic Resource
    Electronic Resource
    ESCA studies on changes in surface composition under ion bombardment (1977)
    Springer
    Applied physics 12 (1977), S. 101-112 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of ion bombardment on the composition of surfaces was investigated by means of ESCA. The bombardment of metal oxides with inert gas ions results, not only in sputtering of the surface, but also in reduction of the oxides. The rate of reduction is particularly high when the oxide/metal interface is within the range of the bombarding ions. Ion induced reduction was found in oxide layers, thinner than the escape depth of the photoelectrons, on Mo, W, Nb, Ta, Ti, Zr, Si, and Bi. The relationship between reduction phenomena, on the one hand, and the ion energy, angle of incidence, mass of the gas used for bombardment, and ion current density, on the other hand, was investigated in the case of the Mo/Mo-oxide system. Ion bombardment of surfaces may also result in the formation of new compounds. Two examples of this are the formation of carbides through the bombardment of contaminated surfaces and the ion induced formation of C-F compounds from a mixture of K2SiF6 and carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900076
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic conduction mechanisms of Cs- and B-implanted SiO2-films (1977)
    Springer
    Applied physics 12 (1977), S. 137-148 
    Details
    ISSN: 1432-0630
    Keywords: 71.50 ; 72.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896139
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  • 11
    Electronic Resource
    Electronic Resource
    Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors (1977)
    Springer
    Applied physics 12 (1977), S. 45-53 
    Details
    ISSN: 1432-0630
    Keywords: 06 ; 79.20 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A very sensitive technique is presented which can be applied to determine deep level profiles in space-charge layers of Schottky barriers orpn-junctions. The method uses an extended transient capacitance technique with correlation similar to Lang's DLTS technique. The extension of DLTS to double correlation DDLTS is necessary to resolve the deep level profile and to exclude the field dependence of the capture cross-section and contact effects. By using a double-pulse capacitance transient and correlation, these undesired effects can be subtracted. Profiles can be determined for deep levels at concentrations 104 times lower than the background doping. Results are reported for epitaxial GaAs which showed one major deep level at 0.18 eV below the conduction band. Near the interface to the substrate, a slight shift in energy from 0.18 to 0.19 eV is observed. A second level at 0.43 eV decays into the epi-layer in the form of a diffusion tail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900067
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  • 12
    Electronic Resource
    Electronic Resource
    Low-energy electron diffraction and auger electron spectroscopy study of the oxidation of Ti {0001} at room temperature (1977)
    Springer
    Applied physics 12 (1977), S. 311-315 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reaction of a clean Ti (0001) surface with oxygen gas at low pressure and room temperature has been studied with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At low exposures (about 1 Langmuir) ap(2×2) superstructure is observed which gradually converts to 1×1 at high exposures (about 100 Langmuirs). The LEED spectra confirm that the final 1×1 structure is different from that of clean Ti (0001), while the AES spectra indicate that the final oxide is probably TiO, not TiO2. The plausibility of this indication is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886031
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  • 13
    Electronic Resource
    Electronic Resource
    Some aspects of auger electron spectra of 3d transition metal oxides (1977)
    Springer
    Applied physics 13 (1977), S. 43-46 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger electron spectra of the transition metals Cr, Mn, Fe, Co and Ni as well as their oxides have been investigated in the energy range between 0–100 eV. In each case of the clean metal surface the observed spectrum consists essentially of one Auger line identified asM 2,3 VV transition. After oxidation a line doublet is observed revealing two transitions instead of one. Additional new Auger peaks appear in the low energy range between 0–30 eV. The “splitting” of the Auger line can be explained as resulting from aM 2,3 V dVd and aM 2,3 V pVp transition. The latter is characteristic for the compound and can in a simple way be interpreted as a cross transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00890718
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  • 14
    Electronic Resource
    Electronic Resource
    Depth resolution in sputter profiling (1977)
    Springer
    Applied physics 13 (1977), S. 205-207 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dependence of depth resolution on sputter depth due to various parameters is theoretically estimated. Comparison with experimental work of different authors shows the validity of the proposed model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882481
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  • 15
    Electronic Resource
    Electronic Resource
    3 to 15 keV Ar+ induced Auger electron emission from Si and Ar (1977)
    Springer
    Applied physics 13 (1977), S. 261-266 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ar+ induced Auger electrons from Si and Ar were investigated at bombardment energies between 3–15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. “Bulk like” and “atomic like” Auger transitions of ion induced Auger electrons of Si were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882890
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  • 16
    Electronic Resource
    Electronic Resource
    Lattice location of lead implanted into silicon at room temperature (1977)
    Springer
    Applied physics 13 (1977), S. 391-393 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882616
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