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  • Other Sources  (190)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (190)
  • 1980-1984  (190)
  • 1950-1954
  • 1981  (190)
  • 1951
  • 1
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    A BAPTA employing rotary transformers, stepper motors and ceramic ball bearings (1981)
    In:  CASI
    Details
    Publication Date: 2006-01-16
    Description: The utilization of rotary transformers as an alternative to slip rings for the power transfer from solar panels to a satellite's main body could be advantageous, especially if an ac bus system is taken into consideration. Different approaches with main emphasis on the electromagnetic design were investigated and showed efficiencies of up to 99% with a 3 kW power capability. A solidly preloaded pair of ball bearings with ceramic balls assures proper transformer air gaps and acceptable torque changes over temperature and temperature gradients. The bearing and power transfer assembly is driven by a direct drive stepper motor with inherent redundancy properties and needs no caging mechanism.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center The 15th Aerospace Mech. Symp.; p 189-203
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  • 2
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    Near millimeter wave bandpass filters (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The properties of bandpass filters for broadband photometry are reported in the 3-12/cm frequency range. The filters are based on a combination of capacitive grids deposited on thick Mylar substrates and are designed to have very high out-of-band rejection. Low frequencies are blocked by a thick grill that consists of a hexagonal grid of circular holes in a thick metal plate.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Optics; 20; Apr. 15
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  • 3
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    Coherent reference generator phase stability (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: Approximate phase stability estimates for the coherent reference generator (CRG) unit in the DSN's Frequency and Timing Subsystem (FTS) are calculated. The method used involves estimating the phase noise introduced by CRG components based upon measurements made in the past on similar components in other parts of the FTS and obtaining the CRG phase noise from the component phase noises. Three estimates of phase stability are calculated: the fractional frequency change for a 5 C step in temperature, the phase noise spectral density, and the Allan standard deviation. It is found from these estimates that the CRG phase stability is better than that of the H-maser physics unit + receiver. Thus, the first step in improving FTS phase stability would be to make improvements in the H-maser physics unit + receiver. These results are corroborated by indirect clock stability estimates calculated from Doppler data.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Progr. Rept. 42-64; p 222-231
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  • 4
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    Second-generation X/S feedcone: Capabilities layout, and components (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: High power (20 kW) S and X-band transmitting systems were added to the Second Generation Common Aperture X/S Feedcone System to demonstrate X and S band uplink/downlink capabilities. Design considerations of new X band components, cone layout, and capabilities are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 97-103
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  • 5
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    End-to-end quality measure for transmission of compressed imagery over a noisy coded channel (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: For the transmission of imagery at high data rates over large distances with limited power and system gain, it is usually necessary to compress the data before transmitting it over a noisy channel that uses channel coding to reduce the effect of noise introduced errors. Both compression and channel noise introduce distortion into the imagery. In order to design a communication link that provides adequate quality of received images, it is necessary first to define some suitable distortion measure that accounts for both these kinds of distortion and then to perform various tradeoffs to arrive at system parameter values that will provide a sufficiently low level of received image distortion. The overall mean square error is used as the distortion measure and a description of how to perform these tradeoffs are included.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Telecommun. and Data Acquisition; p 63-72
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  • 6
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    Semiconductor-ferroelectric nonvolatile memory using anomalous high photovoltages in ferroelectric ceramics (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: A small ferroelectric ceramic element is used with an insulating gate transistor and two diodes as an electrically addressed, nonvolatile memory device which is read out nondestructively. The device uses the anomalous photovoltaic effect in ferroelectric ceramics, an effect in which the polarity and magnitude of photovoltages depend on the direction and magnitude of remanent polarization. Experimental results give memory characteristics. The device could be programmed with pulses as short as 200 ns. There is long-time retention of stored data.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters; 38; Feb. 1
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  • 7
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    Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters; 38; Jan. 1
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  • 8
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    The millimeter wave super-Schottky diode detector (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 9
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    Developing new architectures for the Block 2 VLBI correlator system (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The overall LSI (large-scale integrated circuits) architecture design and current status of the VBLI (very long baseline interferometry) block 2 correlator is addressed. The VBLI correlator algorithms demand a computing system that provides a throughput of hundreds of millions of instructions per second to perform cross-correlation detection for six baselines. The LSI technology lights the way for the computation of complex parallel process and is raising the upper bound of computerization.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Progr. Rept. 42-64; p 30-40
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  • 10
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    A four-way distribution amplifier for reference signal distribution (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A four way distribution amplifier with up to 100 dB isolation and with low phase noise of -140 dBc in a 1 Hz bandwidth 10 Hz from a 100 MHz signal was developed. It is to be used in the stabilized optical fiber distribution system to provide multiple outputs.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Telecommun. and Data Acquisition; p 31-34
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  • 11
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    A prediction model for bipolar RAMs in a high energy ion/proton environment (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: A model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal product development cycle are in direct opposition to improved high-energy particle upset tolerance. Hence, a trade-off between highly susceptible, low power (medium speed) devices must be made against the less susceptible, higher power (high speed) equivalent device, taking into account the systems trade-off with respect to system power, software, error correction procedures and/or circuit redundancy.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 12
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    An advanced, radiation hardened bulk CMOS/LSI technology (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 13
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    Investigation for single-event upset in MSI devices (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 14
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    Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II (1981)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 15
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    CMOS RAM cosmic-ray-induced-error-rate analysis (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 16
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    Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, Proceedings (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 17
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    Experimental verification of a computational procedure for the design of TWT-refocuser-MDC systems (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A comparison of analytical and experimental results is presented for a high performance dual-mode helix TWT, equipped with multistage depressed collectors (MDC), and operated over conditions ranging from saturation to the linear regime. The computations are carried out with advanced multidimensional computer programs which model the electron beam as a series of disks or rings of charge and follow their trajectories from the RF input of the TWT, through the slow-wave structure, through the refocusing system, to their points of impact in the depressed collector. TWT performance, collector efficiency, and collector current distribution are computed and compared with measurements. Very good agreement is obtained between computed and measured TWT performance and collector efficiencies. The analytical techniques were subsequently applied to the design of a smaller MDC of nearly equal efficiency.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 18
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    Fabrication of a 16-channel integrated optical data preprocessor (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A 16-channel integrated optical data preprocessor based on a Mach-Zehnder interferometer configuration has been fabricated on a LiNbO3 substrate. The fabrication procedure is reviewed and a detailed discussion of the steps utilized to integrate the individual components is presented. The results of the device testing experiments are also discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 19
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    Electrical load management at the Goldstone DSN Complex (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A Power Load Management Plan was deveoped which utilizes the unique power generating capabilities of the stations to reduce the stress on the local utility's reserve capacity and reduce the cost of electrical power at the stations. The plan has greatly reduced the cost of Goldstone electrical power by completely eliminating the use of commercial power during the local utility's high usage periods each day.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 219-225
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  • 20
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    Improved cooling design for high power waveguide system (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Testing of X band high power components in a traveling wave resonator indicates that this improved cooling design reduces temperature in the waveguide and flange. The waveguide power handling capability and power transmission reliability is increased substantially.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 104-107
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  • 21
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    High-power transmitter automation, part 2 (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The current status of the transmitter automation development is reported. The work described is applicable to all transmitters in the Deep Space Network. New interface and software designs are described which improve reliability and reduce the time required for subsystem turn on and klystron saturation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 114-117
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  • 22
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    An evaluation of the Intel 2920 digital signal processing integrated circuit (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The circuit consists of a digital to analog converter, accumulator, read write memory and UV erasable read only memory. The circuit can convert an analog signal to a digital representation, perform mathematical operations on the digital signal and subsequently convert the digital signal to an analog output. Development software tailored for programming the 2920 is presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommun. and Data Acquisition Rept.; p 108-113
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  • 23
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    Super-Schottky mixer performance at 92 GHz (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: As part of a program to investigate the behavior of superconducting Schottky mixers at high frequencies, the mixing and video performance of several super-Schottky diodes (a 3-micron active diameter, and a doping concentration of 2 x 10 to the 19th per cu cm) have been tested at 92 GHz. At 92 GHz, video responsivities were typically 80 A/W (corrected for RF mismatch). Conversion loss (corrected for both RF and IF mismatches) was typically not less than 18 dB. As expected, diode temperature was low (less than 5 K). Video responsivity and conversion loss were also measured at an RF frequency of 3.95 GHz. These data were used with the measured volt-ampere characteristics of the diodes to compare theoretical predictions of diode performance at 92 GHz, in both the video and mixing modes, with the high-frequency data
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques; MTT-29; Aug. 198
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  • 24
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    Traveling-wave tube efficiency improvement with textured pyrolytic graphite multistage depressed collector electrodes (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: The improved efficiency of a multistage depressed collector (MDC) with ion-beam textured pyrolytic graphite electrode surfaces is demonstrated by comparison with the performance of other MDC's tested with the same microwave RF amplifier traveling-wave tube (TWT). Because of the sensitivity of overall TWT efficiency to collector efficiency, significant improvements in TWT performance are possible with the use of textured pyrolytic graphite MDC's.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters; EDL-2; Oct. 198
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  • 25
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    Cosmic ray induced errors in I2L microprocessors and logic devices (1981)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.
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  • 26
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    High temperature (Al2O3) insulation and light weight conductors (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The of an aluminum conductor with an aluminum oxide insulation film was investigated. Aluminum oxide insulated wire or strip (with a melting point of 2050 C) is unique for applications in the electronic, missile, atomic reactor, aerospace, and aircraft industries. The oxide film is highly flexible, suitable for all windings of any size and shape of coil (magnetic). Briefly touched upon are the ultraviolet, proton gamma radiation uses, as well as high vacuum and cryogenic applications. Since the film is inorganic and chemically inert, it does not age or deteriorate in storage and has good dielectric properties (1000 volts per mil).
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 123-219
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  • 27
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    A presently available energy supply for high temperature environment (550-1000 deg F) (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: Sodium-sulfur cells attractive electric energy storage device for long service, are discussed. The state of art is given. More than 200 Wh/kg cells were tested. The known range of working temperature is 550 to 750 F. Self-discharge is quite nonexistent for months in operation. The technical basis for expecting an operating range up to 1,000 F under a high pressure atmosphere is given. Possibilities to adapt size and characteristics to particular interplanetary missions are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 107-109
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  • 28
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    Stuffed MO layer as a diffusion barrier in metallizations for high temperature electronics (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: Auger electron spectroscopy was employed to characterize the diffusion barrier properties of molybdenum in the CrSi2/Mo/Au metallization system. The barrier action of Mo was demonstrated to persist even after 2000 hours annealing time at 300 C in a nitrogen ambient. At 340 C annealing temperature, however, rapid interdiffusion was observed to have occurred between the various metal layers after only 261 hours. The presence of controlled amounts of oxygen in the Mo layer is believed to be responsible for suppressing the short circuit interdiffusion between the thin film layers. Above 340 C, its is believed that the increase in the oxygen mobility led to deterioration of its stuffing action, resulting in the rapid interdiffusion of the thin film layers along grain boundaries.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 111-114
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  • 29
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    Solid state microelectronics tolerant to radiation and high temperature (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 93-96
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  • 30
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    Hybrid A/D converter for 200 deg C operation (1981)
    In:  CASI
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    Publication Date: 2017-10-02
    Description: A 12 bit A/D converter was designed and developed which will operate at 200 C with .05 linearity, 1/accuracy, 350 WSec conversion time, and only 455 mW power consumption. This product also necessitated the development of a unique three metal system in which aluminum wire bonding is done utilizing aluminum bonding pads, gold wire bonding to all gold areas, and employment of a nickel interface between gold and aluminum connections. This system totally eliminates the formation of a intermetallics at the bonding interface which can lead to bond failure. This product represents an advancement in electronics as it proved the operation of integrated circuits at high temperature, as well as providing information about both the electrical and mechanical reliability of hybrid circuits at 200 C.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 85-88
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  • 31
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    Minus 55 to plus 200 deg C 12 bit analog-to-digital converter (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: A 12 bit successive approximation analog to digital converter that offers moderately high speed precision data conversion at a reasonable level of cost and complexity is studied. The ADCH10HT extends this capability over a temperature range of -55 to +200 C. No missing-code performance is maintained over the entire temperature range. The converter is completely self-contained with internal clock and +10 volt reference. The CMOS devices offer low power dissipation, so that the internal temperature of the hybrid circuit does not rise as much from self heating. In CMOS circuits, pn junction leakage currents are returned to the supplies so that the logic keeps working at temperatures up to 250 C.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 77-79
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  • 32
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    Process characteristics and design methods for a 300 deg quad OP amp (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The results of process characterization, circuit design, and reliability studies for the development of a quad OP amplifier intended for use up to 300 C are presented. A dielectrically isolated complementary vertical bipolar process was chosen to fabricate the amplifier in order to eliminate isolation leakage and the possibility of latch up. Characterization of NPN and PNP junctions showed them to be suitable for use up to 300 C. Interconnect reliability was predicted to be greater than four years mean time between failure. Parasitic MOS formation was eliminated by isolation of each device.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 81-84
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    Electrical switching in cadmium boracite single crystals (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 67-70
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  • 34
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    Whatever happened to silicon carbide (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 71-76
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  • 35
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    Development of integrated thermionic circuits for high-temperature applications (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: Integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500 C are studied. A set of practical design and performance equations is demonstrated. Experimental results are discussed in which both devices and simple circuits were successfully operated in 5000 C environments for extended periods. It is suggested that ITC's may become an important technology for high temperature instrumentation and control systems in geothermal and other high temperature environments.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 49-53
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  • 36
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    Amorphous metallizations for high-temperature semiconductor device applications (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 35-37
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  • 37
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    Ohmic contacts to GaAs for high-temperature device applications (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 39-42
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  • 38
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    Assessment of high temperature metallizations for I(2)L and CMOS technologies (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: High temperature barrier metallizations were assessed and tested for I(2)L and CMOS applications. Life tests were accelerated to 375 C in view of the -55 C to +300 C temperature range established for engine-located electronics without fuel cooling. The gold-refractory metallizations evaluated were Au-TiW-PtSi, Au-TiW/TiO2/TiW-PtSi and Au-TiW(N)-PtSi. These metallization systems were thermally annealed to at least 375 C for up to 250 hours. The critical requirement for stable diffusion barrier is the TiW grain size. Small grain (250A-500A) films were observed to be stable up to 375 C. Deposition to TiW diffusion barrier in the presence of oxygen and nitrogen also results in an effective diffusion barrier. Auger electron spectroscopy profiles of the PtSi indicates some penetration by the TiW. In the case of PtSi/TiW interface, the redistribution of oxygen further passivates the system by forming a TiO2 layer at the interface.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 33-34
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  • 39
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    Passive components for high temperature operation (1981)
    In:  CASI
    Details
    Publication Date: 2017-10-02
    Description: The development of resistors, capacitors, and interconnect metalizations utilizing a low pressure chemical vapor deposition (LPCVD) process is described. The LPCVD process allows the passive components to be fabricated at temperatures higher than their highest operating temperatures. The deposition of thin films by LPCVD is accomplished by reacting one or more gases on the surface of a heated substrate. The substrates to be coated are placed on a graphite susceptor and then loaded into the center of a quartz reaction tube. The RF power is applied to the coil on the outside of the reaction tube which in turn is coupled into the graphite susceptor causing it to heat. Pressures of several torr or less are typical, with carrier flow rates of 0.1 to 2.0 liters/min. Nitrogen, hydrogen, and helium are typical carrier gases. These are controlled with mass flow controllers and the pressure is continuously monitored with a capacitive manometer. Materials selection and device testing are also discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 21-23
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  • 40
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    Corrosion in NiCd cells (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: Corrosion in the terminals of nickel cadmium cells was investigated. Corrosion, crevice type corrosion, at the interface between the stainless steel material, the nickel material, and the braze was examined. It was concluded that in the welded areas there was no problem. There was corrosion of the crevice type in the brazed areas and some pitting was evident between the braze and the base material.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center The 1981 GSFC Battery Workshop; p 415-420
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  • 41
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    A cause of the non-solderability of ceramic capacitor terminations (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: The results of an analysis into the cause of the non-solderability of multiple defective part lots from two capacitor manufacturers are described. This analysis consisted of visual, scanning electron microscopic, surface, and metalographic examinations and analyses. The results indicated that non-solderability results from areas of excess porosity in the termination which are caused by segregation of ink constituents during manufacturing. This segregation can be minimized by proper monitoring and control of process variables; where excess porosity does occur, solderability can be improved by proper precleaning of parts.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 99-104
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  • 42
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    Specifying capacitors for performance and reliability in switching power supplies (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: The three most commonly used switching circuits are the full bridge converter, the half bridge converter, and the forward converter. All three circuits use the same pulse width concept for regulation with the major difference being how many transistors are used for power handling. The full bridge uses four transistors, the half bridge uses two, and the forward converter uses one. In practical design, forward converters are used at 300 watts and below, half bridges at 300 to 600 watts, and full bridges above 600 watts. Regulation is achieved by alternately saturating diagonal pairs of transistors in the full bridge, alternately saturating transistors in the half bridge, and simply pulse modulating one transistor in the forward converter.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 69-73
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  • 43
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    Polyvinylidene fluoride film as a capacitor dielectric (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 7-12
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  • 44
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    High-frequency measurements of multilayer ceramic capacitors (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: A resonant coaxial transmission line, short circuited at one end and open circuited at the other, whose fundamental resonant frequency and Q factor are known, is perturbed with a test capacitor connected either in series at the shorted end of the line, or in shunt at the open end. Measuring the Q factor of the system with the delta f technique yields the effective series resistance, capacitance, and the Q factor of the test specimen. This method of measurement has the advantage that there are no adjustable elements to alter circuit conditions in an unprescribed way, the only variable is the frequency which can be measured with an uncertainty of less than 1 ppm, the loss of the line as a function of frequency is quite predictable, and the Q factor of the line can be made sufficiently high to support accurate measurements of low loss capacitors.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 119-122
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  • 45
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    Breakdown voltage of discrete capacitors under single-pulse conditions (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 53-62
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  • 46
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    Unstable insulation resistance in ceramic capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The effects of low and varying values of insulation resistance (IR) and their significance in the cause of failure in ceramic capacitors were investigated. Two specific instances involving hardware failure involving ceramic capacitors were examined. It is shown that monolithic, multilayer ceramic capacitors may exhibit low and unstable IR at low voltages, or exhibit no voltage. Other significant results are reported.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Capacitor Technol., Appl. and Reliability; p 27-31
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  • 47
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    Radiation response and electrical properties of polymer energy storage capacitors: PVF2, Polysulfone, and Mylar (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: Efforts were made to develop a polymer film capacitor that is tolerant to radiation. The capacitors are to be utilized in a high voltage pulse discharge application. Radiation response data at high dose/dose rate levels are presented for polyvinylidene fluoride (PVF2), polysulfone, and Mylar. The results show that PVF2 is the most radiation tolerant while Mylar is the least tolerant. The data also show that the radiation response is quite dependent on operating electric stress.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 1-5
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  • 48
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    Development of a sub-miniature rubidium oscillator for SEEKTALK application (1981)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Warm-up and size challenges to oscillator construction are presented as well as the problems involved in these tasks. The performance of M-100 military rubidium oscillator is compared to that of a subminiture rubididum oscillator (M-1000). Methods of achieving 1.5 minute warm-up are discussed as well as improvements in performance under adverse environmental conditions, including temperature, vibration, and magnetics. An attempt is made to construct an oscillator error budget under a set of arbitrary mission conditions.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center Proc. of the 12th Ann. Precise Time and Time Interval Appl. and Planning Meeting; p 719-742
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  • 49
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    Frequency and time generation and control (1981)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: High precision quartz crystal oscillators, cesium beam atomic resonators, and cesium beam atomic standards for time and frequency generation equipment for ground, airborne, and space use are described. Because of the high risk factors involved, and the commercial applications of these products being too far off in the future, private capital for research and development is difficult if not impossible to obtain. More specific analysis and recommendations to overcome these difficulties are objectively presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Goddard Space Flight Center Proc. of the 12th Ann. Precise Time and Time Interval Appl. and Planning Meeting; p 211-251
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  • 50
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    Capacitor DPA: Does it do any good? (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: Methods of destructive physical analysis (DPA) are suggested which might have more usefulness if the procedures followed lines of accelerated testing. A brief presentation of DPA procedures is followed by a discussion of their value.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 125-129
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  • 51
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    A comparison of screening techniques for ceramic capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The techniques involved are ultrasonic scanning, neutron radiography, scanning laser acoustic microscopy, and voltage conditioning. The test capacitor, for this first phase, is a 0.47 uF, 50V capacitor style CKR06. Eighteen of 768 devices failed in voltage conditioning with elapsed times from 15 minutes to 1239 hours. Eleven of the failures were detected by ultrasonic scanning. Four failures were found by neutron radiography. Fourteen failures showed up in the acoustic microscopy test. Three failures in voltage conditioning were not detected by any of the techniques. Failures were confirmed by destructive physical analysis. There is no direct relationship between the size of the defect and electrical failure.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 111-117
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  • 52
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    Monolithic ceramic capacitors for high reliability applications (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: Monolithic multi-layer ceramic dielectric capacitors are widely used in high reliability applications in spacecraft, launch vehicles, and military equipment. Their relatively low cost, wide range of values, and package styles are attractive features that result in high usage in electronic circuitry in these applications. Design and construction of monolithic ceramic dielectric capacitors, defects that can lead to failure, and methods for defect detection that are being incorporated in military specifications are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 75-88
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  • 53
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    Failure analysis methods for capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The basic steps in the failure analysis of discrete capacitors used in electronic circuit boards and hybrid assemblies are described. These steps include: visual examination; functional test; disassembly; isolation of the failure site; and documentation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 131-148
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  • 54
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    Ultrasonic scanning of multilayer ceramic chip capacitors (1981)
    In:  Other Sources
    Details
    Publication Date: 2016-06-07
    Description: Ultrasonic scanning is compared to neutron radiography and scanning laser acoustic microscopy (SLAM). Data show that SLAM and ultrasonic scanning evaluations are in good agreement. There is poor agreement between N-ray and both ultrasonic techniques because N-ray is insensitive to all but the grossest delaminations. Statistical analysis show a good correlation between ultrasonic scanning and destructive physical analysis.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Technol., Appl. and Reliability; p 105-110
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  • 55
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    Accelerated life testing and reliability of high K multilayer ceramic capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 93-97
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  • 56
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    Capacitors, thermal rating/derating (ac-dc operation) (1981)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Application techniques for determining performance and ratings of cased capacitors under combined operation as a function of the actual operating conditions are described. Thermal impedances between the case and external environment and between the internal hot spot and case are taken into account.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 89-97
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  • 57
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    Internal fuse modules for solid tantalum capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: Miniature fuse modules were designed for and incorporated into two styles of solid tantalum capacitors. One is an epoxy molded, radial leaded, high frequency decoupling capacitor; the other is an hermetically sealed device with axial lead wires. The fusible element for both devices consists of a fine bimetallic wire which reacts exothermically upon reaching a critical temperature and then disintegrates. The desirability of having fused devices is discussed and design constraints, in particular those which minimize inductance and series resistance while optimizing fuse actuation characteristics, are reviewed. Factors affecting the amount of energy required to actuate the fuse and reliability of acuation are identified.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 63-68
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  • 58
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    Super miniaturization of film capacitor dielectrics (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 39-43
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  • 59
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    Performance comparison: Aluminum electrolytic and solid tantalum capacitor (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: Several key electrical and environmental parameters of latest technology aluminum electrolytic and solid tantalum capacitors were evaluated in terms of price fluctuations of tantalum metal. Performance differences between solid tantalums and aluminum electrolytics are examined.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 19-25
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  • 60
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    Effects of severe stressing on tantalum capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The ultimate capabilities of an all tantalum capacitor were determined and evaluated. The evaluation included: 175 C life; 100 cycle thermal shock; 70 g random vibration; 3000 g shock; and 90 C ase ripple current.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 45-52
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  • 61
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    Influence of current needs on the advancement of aluminum electrolytic capacitors (1981)
    In:  Other Sources
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    Publication Date: 2016-06-07
    Description: The need for cost effective, high performance, long life capacitors with improved reliability is discussed. It is shown that a low cost, miniature aluminum capacitor, with improved reliability and proven life, can be produced with existing technology. It is further shown that the capacitor can be specified for 125 C life and shelf test requirements, and meet established standards for their parametric performance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 33-37
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  • 62
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    The Application of Perfluorocarbons as Impregnants for Plastic Film Capacitors (1981)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: A liquid impregnated, plastic film (wet) capacitor was developed that is thought to be the most reliable and space efficient capacitor of any type ever produced for high voltage, pulse discharge service. The initial design stores five times the energy of a premium quality dry capacitor of equivalent energy and reliability. The technology, as well as a production capacitor design using this technology are described.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Marshall Space Flight Center Capacitor Technol., Appl. and Reliability; p 13-17
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  • 63
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    Commercialization of the power factor controller (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The purpose of the Motor Power Controller, also known as the Power Factor Controller, is to improve power factor and reduce power dissipation in induction motors operating below full load. These purposes were studied and tested in detail. The Motor Power Controller is capable of raising power factors from 0.2 to 0.8 and results in energy savings. It was found that many motors, in their present operating applications, are classified as unstable. The electronic nature of the controller vs. the electrical nature of the motor, compound this problem due to the differences in response time of the two devices. Many tests were successfully completed, the most indicating greater savings than anticipated. Also, there was an effect on efficiency which was not included in the calculations.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-171500 , NAS 1.26:171500
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  • 64
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    Development of low cost custom hybrid microcircuit technology (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Selected potentially low cost, alternate packaging and interconnection techniques were developed and implemented in the manufacture of specific NASA/MSFC hardware, and the actual cost savings achieved by their use. The hardware chosen as the test bed for this evaluation ws the hybrids and modules manufactured by Rockwell International fo the MSFC Flight Accelerometer Safety Cut-Off System (FASCOS). Three potentially low cost packaging and interconnection alternates were selected for evaluation. This study was performed in three phases: hardware fabrication and testing, cost comparison, and reliability evaluation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-161977 , NAS 1.26:161977
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  • 65
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    Derivation of linearized transfer functions for switching-mode regulations. Phase A: Current step-up and voltage step-up converters (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Small-signal models are derived for the power stage of the voltage step-up (boost) and the current step-up (buck) converters. The modeling covers operation in both the continuous-mmf mode and the discontinuous-mmf mode. The power stage in the regulated current step-up converter on board the Dynamics Explorer Satellite is used as an example to illustrate the procedures in obtaining the small-signal functions characterizing a regulated converter.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-175219 , NAS 1.26:175219
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    Forming electrical interconnections through semiconductor wafers (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics; 52; Aug. 198
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  • 67
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    A normalized model for the half-bridge series resonant converter (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Closed-form steady-state equations are derived for the half-bridge series resonant converter with a rectified (dc) load. Normalized curves for various currents and voltages are then plotted as a function of the circuit parameters. Experimental results based on a 10-kHz converter are presented for comparison with the calculations.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Aerospace and Electronic Systems; AES-17; Mar. 198
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  • 68
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    Far-infrared bandpass filters from cross-shaped grids (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: The optical transmission characteristics of electroformed metal grids with inductive and capacitive cross patterns have been investigated in the far-infrared spectral region. The transmission characteristics of one- and two-grid devices are represented by transmission line theory parameters. Results are used to suggest construction guidelines for two-grid bandpass filters.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Optics; 20; Apr. 15
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  • 69
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    Time delay and integration detectors using charge transfer devices (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: An imaging system comprises a multi-channel matrix array of CCD devices wherein a number of sensor cells (pixels) in each channel are subdivided and operated in discrete intercoupled groups of subarrays with a readout CCD shift register terminating each end of the channels. Clock voltages, applied to the subarrays, selectively cause charge signal flow in each subarray in either direction independent of the other subarrays. By selective application of four phase clock voltages, either one, two or all three of the sections subarray sections cause charge signal flow in one direction, while the remainder cause charge signal flow in the opposite direction. This creates a form of selective electronic exposure control which provides an effective variable time delay and integration of three, six or nine sensor cells or integration stages. The device is constructed on a semiconductor sustrate with a buried channel and is adapted for front surface imaging through transparent doped tin oxide gates.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 70
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    X-ray topography study of complex silicon microcircuits (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-161815
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  • 71
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    Shielded conductor cable system (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A cable system carries one or more insulated conductors completely enclosed within a shield having one end connected to ground. A lightning protector network connects the other end of the shield to ground. The protector network is normally open circuited and becomes only short circuited in response to a momentary abnormal surge voltage induced in the shield. The protector network's open to short impedance change completes a conductive circuit path between the shield and the two grounded ends for conducting a shield current which has the desired effect of protecting the signal carrying conductors in the cable from the large surge voltage.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 72
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    A microprocessor-based table lookup approach for magnetic bearing linearization (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: An approach for producing a linear transfer characteristic between force command and force output of a magnetic bearing actuator without flux biasing is presented. The approach is microprocessor based and uses a table lookup to generate drive signals for the magnetic bearing power driver. An experimental test setup used to demonstrate the feasibility of the approach is described, and test results are presented. The test setup contains bearing elements similar to those used in a laboratory model annular momentum control device.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TP-1838 , L-13969
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  • 73
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    Elimination of current spikes in buck power converters (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Current spikes in a buck power converter due to commutating diode turn-off time are eliminated by using a tapped inductor in the converter with the tap connected to the switching transistor. The commutating diode is not in the usual place, but is instead connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistor is not conducting. In the case of a converter having a center-tapped (primary and secondary) transformer between two switching power transistors operated in a push-pull mode and two rectifying diodes in the secondary circuit, current spikes due to transformer saturation are also eliminated by using a tapped inductor in the converter with the tap connected to the rectifying diodes and a diode connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistors are not conducting.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 74
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    Buck/boost regulator (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A voltage regulated DC to DC converter uses an inductor and a capacitor as storage elements. The inductor is composed of two windings having a common junction. A transformer with a center tap connected to the common junction of the two windings is connected at either end of its winding to ground through controlled switches. One winding of the inductor and either end of the transformer winding are connected by power diodes to the capacitor which supplies the output voltage to a load. The other winding of the inductor is connected to a fourth power diode as a clamping diode. Input voltage is supplied to the inductor through a third controlled switch. A pulse width modulator connected to the output of the converter alternately closes and opens the switches connected to either end of the transformer winding and also closes the switch supplying input voltage to the inductor each time either of the switches connected to the ends of the transformer winding are closed. The duty cycle of the closing and opening of the several switches is adjusted by the pulse modulator to regulate the output voltage.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 75
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    US Army remotely piloted vehicle supporting technology program (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Essential technology programs that lead to the full scale engineering development of the Aquila Remotely Piloted Vehicle system for U.S. Army are described. The Aquila system uses a small recoverable and reusable RPV to provide target acquisition, designation, and aerial reconnaissance mission support for artillery and smart munitions. Developments that will provide growth capabilities to the Aquila RPV system, as well as future RPV mission concepts being considered by the U.S. Army are presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-81263 , A-8450 , USAAVRADCOM-TR-81-A-3
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    An investigation of radiometer design using digital processing techniques (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The use of digital signal processing techniques in Dicke switching radiometer design was investigated. The general approach was to develop an analytical model of the existing analog radiometer and identify factors which adversly affect its performance. A digital processor was then proposed to verify the feasibility of using digital techniques to minimize these adverse effects and improve the radiometer performance. Analysis and preliminary test results comparing the digital and analog processing approaches in radiometers design were analyzed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-81932
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    Simple formulas for designing an offset multibeam parabolic reflector (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Theoretical methods (computer programs) which are available for analyzing reflector performance are of the 'forward' type. Performance parameters can be calculated after the configuration of the reflector is given. In many practical applications, however, the problem is often of the 'inverse' type. The reflector has to be designed on the basis of a given set of performance parameters. Attention is given to a systematic procedure based on simple formulas for solving such an inverse problem. Because of the simplicity of the formulas, the final results obtained from the procedure do not have great accuracy. Thus, they represent only a preliminary design, which can be refined by repeatedly using the forward-type programs.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Antennas and Propagation; AP-29; May 1981
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  • 78
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    Development and fabrication of a fast recovery, high voltage power diode (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-165411
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  • 79
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    Total-dose radiation effects data for semiconductor devices, volume 1 (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-164707 , JPL-PUB-81-66-VOL-1
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    Performance of computer-designed small-sized four-stage depressed collector for operation of dual-mode traveling wave tube (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A computer-designed axisymmetric 2.4-cm-diameter four-stage depressed collectors was evaluated in conjunction with an octave bandwidth, dual-mode traveling wave tube (TWT). The TWT was operated over a wide range of conditions to simulate different applications. The collector performance was optimized (within the constraint of fixed collector geometry which was designed for operation of the TWT at saturation) over the range of TWT operating conditons covered. For operation of the dual-mode TWT at saturation, average collector efficiencies of 81 1/2 and 82 percent for the high and low modes, respectively, were obtained across an octave bandwidth, leading to a three-fold increase in the TWT overall efficiency. For operation of the TWT in the linear, low distortion range, collector efficiencies of 87 to 92 percent were obtained, leading to TWT overall efficiencies as high as 35 percent. For operation of the dual-mode TWT over a 10 to 1 range in output power, overall efficiencies of 14 to 41 percent were obtained.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TP-1832 , E-643
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    RAD hard PROM design study (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The results of a preliminary study on the design of a radiation hardened fusible link programmable read-only memory (PROM) are presented. Various fuse technologies and the effects of radiation on MOS integrated circuits are surveyed. A set of design rules allowing the fabrication of a radiation hardened PROM using a Si-gate CMOS process is defined. A preliminary cell layout was completed and the programming concept defined. A block diagram is used to describe the circuit components required for a 4 K design. A design goal data sheet giving target values for the AC, DC, and radiation parameters of the circuit is presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-164774 , IR-3 , MEC-81-076-R , JPL-9950-579
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  • 82
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    Study program for design improvements of the X-3060 klystron. Phase 3: Electron gun fabrication and beam analyzer evaluation. Phase 4: Klystron prototype fabrication and testing (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A full scale model was produced to verify suggested design changes. Through beam analyzer study, the correct electron beam diameter and cross sectional profile were established in conjunction with the desired confining magnetic field. Comparative data on the performance of the X-3060 klystron, design predictions for the improved klystron, and performance data taken during acceptance testing of the prototype VKS-8274 JPL are presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-164672 , JPL-9950571
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  • 83
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    Straight and chopped dc performance data for a Prestolite MTC-4001 motor and a general electric EV-1 controller (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Performance data on the Prestolite MTC-4001 series wound dc motor and General Electric EV-1 Chopper Controller is supplied for the electric vehicle manufacturer. Data are provided for both straight and chopped dc input to the motor, at 2 motor temperature levels. Testing was done at 6 voltage increments to the motor, and 2 voltage increments to the controller. Data results are presented in both tabular and graphical forms. Tabular information includes motor voltage and current input data, motor speed and torque output data, power data and temperature data. Graphical information includes torque-speed, motor power output-speed, torque-current, and efficiency-speed plots under the various operating conditions. The data resulting from this testing show the speed-torque plots to have the most variance with operating temperature. The maximum motor efficiency is between 76% and 82%, regardless of temperature or mode of operation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-165382 , DOE/NASA/0123-2 , ERC-TR-80169
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  • 84
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    Straight and chopped dc performance data for a General Electric 5BT 2366C10 motor and an EV-1 controller (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Performance data on the General Electric 5BT 2366C10 series wound dc motor and EV-1 Chopper Controller is supplied for the electric vehicle manufacturer. Data is provided for both straight and chopped dc input to the motor, at 2 motor temperature levels. Testing was done at 6 voltage increments to the motor, and 2 voltage increments to the controller. Data results are presented in both tabular and graphical forms. Tabular information includes motor voltage and current input data, motor speed and torque output data, power data and temperature data. Graphical information includes torque-speed, motor power output-speed, torque-current, and efficiency-speed plots under the various operating conditions. The data resulting from this testing shows the speed-torque plots to have the most variance with operating temperature. The maximum motor efficiency is between 86% and 87%, regardless of temperature or mode of operation. When the chopper is utilized, maximum motor efficiency occurs when the chopper duty cycle approaches 100%.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-165322 , DOE/NASA/0123-1 , ERC-TR-80154
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  • 85
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    Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.
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    Electrical power generating system (1981)
    In:  CASI
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    Publication Date: 2019-06-28
    Description: An alternating current power generation system adopted to inject power in an already powered power line is discussed. The power generating system solves to adjustably coup an induction motor, as a generator, to an ac power line wherein the motor and power line are connected through a triac. The triac is regulated to normally turn on at a relatively late point in each half cycle of its operation, whereby at less than operating speed, and thus when the induction motor functions as a motor rather than as a generator, power consumption from the line is substantially reduced. The principal application will be for windmill powered generation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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    SEM analysis of ionizing radiation effects in an analog to digital converter /AD571/ (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: The considered investigation is concerned with the study of the total-dose degradation mechanisms in an IIL analog to digital (A/D) converter. The A/D converter is a 10 digit device having nine separate functional units on the chip which encompass several hundred transistors and circuit elements. It was the objective of the described research to find the radiation sensitive elements by a systematic search of the devices on the LSI chip. The employed technique using a scanning electron microscope to determine the functional blocks of an integrated circuit which are sensitive to ionizing radiation and then progressively zeroing in on the soft components within those blocks, proved extremely successful on the AD571. Four functional blocks were found to be sensitive to radiation, including the Voltage Reference, DAC, IIL Clock, and IIL SAR.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 88
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    Permanent magnet properties of Mn-Al-C between -50 C and +150 C (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Anisotropic Mn-Al-C (Ni) magnets are potential substitutes for Alnico 5 and 8. The limited machinability of the alloy and the fact that it is cobalt-free made it particularly interesting. The low Curie point and the costly warm extrusion process needed for grain orientation are drawbacks. The objective of this study was a detailed magnetic characterization of the material for possible use in electric machinery. The principal subjects of the study were the largest extruded bars presently available, of 31 mm diameter. Easy and hard axis magnetization curves and second-quadrant recoil loop fields were measured at various temperatures ranging from -50 C to +150 C. Property variations over the cross section of a bar were also studied.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics; MAG-17; Nov. 198
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    'Bootstrap' charging of surfaces composed of multiple materials (1981)
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    Publication Date: 2019-06-28
    Description: The paper examines the charging of a checkerboard array of two materials, only one of which tends to acquire a negative potential alone, using the NASA Charging Analyzer Program (NASCAP). The influence of the charging material's field causes the otherwise 'non-charging' material to acquire a negative potential due to the suppression of its secondary emission ('bootstrap' charging). The NASCAP predictions for the equilibrium potential difference between the two materials are compared to results based on an analytical model.
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  • 90
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    Schottky diode mm detectors with improved sensitivity and dynamic range (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: A detector which features a low-barrier Si Schottky diode is discussed. The unbiased diode has a sensitivity of -60 dBm and a range of 50 dB at 95 GHz, and fixed tuning yields a sensitivity within 2 dB from 75-110 GHz. A limitation of the low-barrier diode is a reduction in the low-level sensitivity by 16 dB under a 100 kilohms load. Use of the diode with a video impedance of 120 kilohms enables the offset voltage to be nulled with an appropriate control. Operation of the diode in a waveguide mount for use as a mixer is described, along with detector rectification.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwave Journal; 24; Dec. 198
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  • 91
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    Realizable feed-element patterns for multibeam reflector antenna analysis (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: The radiation pattern of a feed element is approximately described by a simple function (cos theta) to the q power. For a given element spacing of the feed array, simple formulas for estimating the practical value of q when the element is an open-ended rectangular waveguide, an open-ended circular waveguide, a pyramidal horn, or a cigar antenna are given.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Antennas and Propagation; AP-29; Nov. 198
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  • 92
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    Modifications to CTVS TV cameras for space shuttle compatibility and evaluation (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Five all solid state cockpit television system (CTVS) cameras, built to USAF requirements for high performance type F-16 aircraft, were modified and tested for possible use in the closed circuit television system on the space shuttle orbiter. The 400 HZ power supply in the electronics unit assembly was replaced with two DC/DC converters to enable operation from 28VDC spacecraft-type power sources. Nonessential circuit functions were deleted to minimize input power requirements. The normal 31 mm focal length lense assemblies were replaced with wider field-of-view 19 mm focal length lenses. Base plates for and housings were redesigned to facilitate mounting and heat-sinking of the camera in the space environment and short length (14") adapter cables were designed, fabricated, and tested to meet requirements for cameras configured to mount on the astronauts helmet/visor assembly. Technical requirements, design implementation, environmental tests, Modifications prodedures, and reliability/quality efforts are discussed. Schematics are included.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-161087 , ED-AX-225
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  • 93
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    Variable N-type negative resistance in an injection-gated double-injection diode (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-28; Mar. 198
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    Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors (1981)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-28; Jan. 198
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  • 95
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    Push-pull converter with energy saving circuit for protecting switching transistors from peak power stress (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: In a push-pull converter, switching transistors are protected from peak power stresses by a separate snubber circuit in parallel with each comprising a capacitor and an inductor in series, and a diode in parallel with the inductor. The diode is connected to conduct current of the same polarity as the base-emitter juction of the transistor so that energy stored in the capacitor while the transistor is switched off, to protect it against peak power stress, discharges through the inductor when the transistor is turned on, and after the capacitor is discharges through the diode. To return this energy to the power supply, or to utilize this energy in some external circuit, the inductor may be replaced by a transformer having its secondary winding connected to the power supply or to the external circuit.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 96
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    Transfer-matrices for series-type microwave antenna circuits (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Transfer matrices are developed which permit analysis and computer evaluation of certain series type microwave antenna circuits associated with an L-Band microwave radiometer (LBMR) under investigation at Goddard Space Flight Center. This radiometer is one of several diverse instrument designs to be used for the determination of soil moisture, sea state, salinity, and temperature data. Four port matrix notation is used throughout for the evaluation of LBMR circuits with mismatched couplers and lossy transmission lines. Matrix parameters in examples are predicted on an impedance analysis and an assumption of an array aperture distribution. The notation presented is easily adapted to longer and more varied chains of matrices, and to matrices of larger dimension.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-82054
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  • 97
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    Analytical prediction and experimental verification of performance at various operating conditions of a dual-mode traveling wave tube with multistage depressed collectors (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A comparison of analytical and experimental results is presented for a high performance dual-mode traveling wave tube (TWT) operated over a wide range conditions. The computations are carried out with advanced multidimensional computer programs. These programs model the electron beam as a series of disks or rings of charge and follow their trajectories from the rf input of the TWT through the slow-wave structure refocusing system to their points of impacts in the depressed collector. TWT performance, collector efficiency, and collector current distribution are computed and compared with measurements. Very good agreement was obtained between computed and measured TWT performance and collector efficiencies, and the computer design of a highly efficient collector was demonstrated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TP-1831 , E-577
    Format: application/pdf
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  • 98
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    Unknown
    Decommutator patchboard verifier (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A system for automatically verifying the connections between terminals of a patchboard is described. The system includes a back plane having a plurality of plugs corresponding to the pins of the patchboard. A number of decoders are connected to the plugs of the back plane so that a signal can be sequentially applied to each plug of the back plane under control of a stepping register and a control circuit. A plurality of data selectors are also connected to the plugs of the back plane and under control of a second external register. This control circuit sequentially makes connections between an output circuit and the plugs of the back plane so as to patch the signal applied to a respective plug through a patch connection to the output circuit. The precise locations of the patches on the patchboard can be identified and compared with previously stored information in a memory unit.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 99
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    Adaptive polarization separation (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A broadband adaptively controlled polarization separation network is discussed. Two transmitted signals vertically and horizontally polarized are received as elliptically polarized signals. If there is any vertical polarization on the other signal the separation network provides two signals. The separation is done automatically by the use of two sets of crosscouplers which couple a single line to the other line to complete the polarization decoupling operation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 100
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    Transient upsets in microprocessor controllers (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The modeling and analysis of transient faults in microprocessor based controllers are discussed. Such controllers typically consist of a microprocessor, read only memory storing and application program, random access memory for data storage, and input/output devices for external communications. The effects of transient faults on the performance of the controller are reviewed. An instruction level perspective of performance is taken which is the basis of a useful high level program state description of the microprocessor controller. A transition matrix is defined which determines the controller's response to transient fault arrivals.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-165713
    Format: application/pdf
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