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  • Articles  (34)
  • 68.55  (34)
  • 2015-2019
  • 1990-1994  (34)
  • 1993  (23)
  • 1992  (11)
  • 1947
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (34)
  • Sociology
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  • Articles  (34)
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  • 2015-2019
  • 1990-1994  (34)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (34)
  • Sociology
  • Geography
  • Physics  (34)
  • 1
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 217-219 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heavily carbon-doped AlAs films with free-hole concentrations in excess of 1019 cm−3 have been grown by conventional molecular beam epitaxy using elemental sources. The hole concentration in AlAs:C saturates at 6×1019 cm−3 without any detectable deterioration of the smooth surface morphology and of the structural properties. At very high carbon concentrations the lattice contraction due to the smaller covalent radius of carbon leads to an in-plane lattice constant of the AlAs:C films which is even smaller than that of the GaAs substrate. The high freehole concentration and the tunability of the lattice constant are important for application in p-type GaAs/AlAs Bragg reflectors in surface emitting lasers having a low series resistance and a significantly reduced lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332591
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  • 2
    Electronic Resource
    Electronic Resource
    Compositional and structural characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (1993)
    Springer
    Applied physics 57 (1993), S. 407-414 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is described for the quantitative characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (HRTEM) in [110] and [100] crystal projections. The method relies on systematic variations of the image contrast with variations of the local composition x for certain ranges of objective lens defocus Δf and specimen thickness t and takes tetragonal lattice distortions fully into account. From an extensive study of the image formation process for Si x Ge1−x alloys and coherent Si/Si x Ge1−x interfaces, ranges of Δf and t were identified by Bloch-wave and multi-slice image simulations at 400 keV for which a quasi-linear functional relationship between the composition x and the first-order Fourier coefficients of the image intensity exists. By application of a novel image-processing algorithm, which allows a precise measurement of image Fourier coefficients in geometrically distorted lattice images, local composition values x can be determined at near-atomic resolution with an accuracy of Δx ≤ ±0.1 and interface sharpness can be detected at the atomic level. Recent applications of the method to the characterization of interfaces of strained Si x Ge1−x layers and short-period Si m Ge n superlattices fabricated by different deposition techniques will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331779
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  • 3
    Electronic Resource
    Electronic Resource
    Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface (1993)
    Springer
    Applied physics 57 (1993), S. 415-425 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331780
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 469-473 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nickel-antimony intermetallic compounds of different stoichiometries were studied by means of perturbed angular correlation (PAC) spectroscopy. The hyperfine interaction parameters for 111Cd probes in the crystal lattices of NiSb, Ni5Sb2, Ni3Sb and NiSb2 were determined. The results are discussed in the light of crystallographic data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331787
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  • 5
    Electronic Resource
    Electronic Resource
    Entropy-controlled site occupation of CO adsorbed on Ni(100) (1993)
    Springer
    Applied physics 57 (1993), S. 499-505 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for Θ=0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm−1 which cannot be explained at present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331748
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially-resolved characterization of HTSC-films near T c by laser raster microscopy with thermal excitation (1993)
    Springer
    Applied physics 56 (1993), S. 119-122 
    Details
    ISSN: 1432-0630
    Keywords: 74.70 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method (laser raster microscopy with thermal excitation, LRMTE) for characterizing high-T c thin-film superconductors (HTSC) with microscopic resolution is described. By means of spatially resolved laser excitation and subsequent monitoring of the time dependence of the film resistivity at a base temperature near the transition temperature T c, spatial variations of the transition temperature (T c), of the temperature coefficient of the resistivity (dQ/dT), of the heat conductivity and heat capacity of the film and of the heat conductivity between film and substrate can be detected with high spatial resolution (15 μm have been achieved so far).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517677
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  • 7
    Electronic Resource
    Electronic Resource
    Modeling of gas-phase processes in laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser (1993)
    Springer
    Applied physics 56 (1993), S. 138-146 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 68.55 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser has been modeled and simulated to investigate the kinetics and mechanisms of the deposition. The model concerns gas-phase processes including photolysis of Cr(CO)6, transportation of photofragments to the substrate surface, and elimination of photofragments through chemical reactions during transportation. The photofragments are eliminated through the reforming to Cr(CO)6 that is divided into the two stages: stabilization of the photofragments in excited states by collisions with buffer gases (CO, Ar) and recombination of the photofragments in the ground state with CO. The simulation shows that the deposition rate without additional buffer gases is of the same order as the experimental rate and that deposition rates in the presence of additional CO and Ar agree qualitatively with experimental results. This suggests that the supply of Cr species to the substrate surface is mainly controlled by the gas-phase processes where the chemical reactions eliminating photofragments play an important role. Applications of the model for the deposition under other conditions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517681
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  • 8
    Electronic Resource
    Electronic Resource
    Monte-Carlo study of reactive ion-beam assisted film growth (1993)
    Springer
    Applied physics 56 (1993), S. 561-565 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Monte-Carlo computer program which is composed of ion implantation simulation and deposition calculation is described. It is applied to study TiN film growth by reactive ion-beam assisted deposition in a N2 gas environment. The relationship between film composition and nitrogen partial pressure in the processing chamber is established. The influence of ion energy, atomic arrival rate ratio and ion species on the thickness of the film is studied. We also investigated the intermixing at the interface region between the film and substrate. The calculated data are compared with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331405
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  • 9
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of optimized thin gold films as top layer of MIS solar cells (1992)
    Springer
    Applied physics 54 (1992), S. 204-207 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 78.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical spectral response between 340–860 nm and electrical conductivity measurements were made on thermally evaporated gold films in the thickness range 50–130 Å in order to identify optimal properties for their use as the top layer of MIS solar cells. Films of lower evaporation rate and thickness range 70–100 Å were found to have high transmittance and low reflectance, which is desirable for the above purpose. Films thinner than 70 Å had poor electrical conductivity and thicker than 100 Å had poor solar transmittance, hence were rejected. Improved transmittance and conductivity were obtained upon annealing the film at 250°C for about two hours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323913
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs (1992)
    Springer
    Applied physics 54 (1992), S. 284-287 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time insulating epitaxial SrF2 films on (100) GaAs substrates have been grown by thermal deposition followed by in situ annealing process. Structural properties of SrF2 films examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicate a very good crystalline quality. It is observed from the X-ray analysis that SrF2 layers thinner than 100 nm suffer two dimensional compressive stress due to the lattice misfit while those thicker than 100 nm suffer two dimensional tensile stress due to the difference in the thermal expansion coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323851
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  • 11
    Electronic Resource
    Electronic Resource
    MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992)
    Springer
    Applied physics 54 (1992), S. 103-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40T ; 85.30D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348140
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  • 12
    Electronic Resource
    Electronic Resource
    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323848
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  • 13
    Electronic Resource
    Electronic Resource
    Effect of oxygen segregation on the surface structure of single-crystalline niobium films on sapphire (1992)
    Springer
    Applied physics 54 (1992), S. 350-354 
    Details
    ISSN: 1432-0630
    Keywords: 61.14.H ; 68.20 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single-crystalline Nb films are grown on (1120) oriented sapphire substrates by electron-beam evaporation in ultra-high vacuum. The films are studied in-situ by RHEED and Auger analysis. At a substrate temperature T S=750° C the RHEED pattern shows a smooth growth of bcc-Nb in the [110] direction. In addition to the fundamental streaks, we observe superlattice streaks of fractional order in several azimuthal directions. The reciprocal lattice of the surface is determined. The basic vectors of the superlattice in real space are given by b 1=2a 1, b 2=−a 1+3a 2 where a 1 and a 2 are the basic vectors of the Nb (110) surface. Auger analysis shows that the surface of these films is contaminated with oxygen. Therefore, the superstructure is attributed to a modified surface structure due to segregated oxygen, possibly having diffused from the sapphire to the film surface. The superstructure dissappears during further evaporation of Nb at T S〈450° C with a concomitant decrease of the oxygen signal. Nb films on sapphire with a clean, oxygen-free surface can only be prepared at lower temperatures in an island-growth mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324200
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  • 14
    Electronic Resource
    Electronic Resource
    Improvement of corrosion resistance of carbon steel using chemical vapor deposition from Cr(CO)6 with an ArF excimer laser (1992)
    Springer
    Applied physics 55 (1992), S. 207-212 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Corrosion resistance of carbon steel coated with thin film deposited from Cr(CO)6 using an ArF excimer laser (193 nm) has been evaluated by an electrochemical method as a function of laser beam intensity. The carbon steel coated with the film formed at higher beam intensity shows higher corrosion resistance. Microstructure, composition, and thickness of the films have also been investigated. SEM micrographs show that the films consist of small grains which decrease in size with increasing beam intensity. Auger electron spectroscopy (AES) combined with Ar+ beam sputtering reveals that the films deposited at higher beam intensity give higher chromium content, and that the thickness at a fixed total irradiation energy increases up to the intensity of 10 MW cm−2, falling above this intensity. In addition, the change of film thickness by addition of buffer gases (Ar, CO, and H2O) has been investigated. The thickness is 10 times smaller under the addition of H2O, and twice smaller under the addition of Ar or CO than without the addition of gases. A deposition mechanism based on photolysis of Cr(CO)6 in the gas phase is proposed related to the experimental data after the discussion of several possible mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334225
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  • 15
    Electronic Resource
    Electronic Resource
    Texture formation in polycrystalline diamond vapour growth under the influence of a pulsed supersonic beam (1992)
    Springer
    Applied physics 55 (1992), S. 347-351 
    Details
    ISSN: 1432-0630
    Keywords: 61.50.Cj ; 61.50.Jr ; 68.55 ; 81.10.Bk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polycrystalline diamond film deposition is studied under the influence of a pulsed supersonic beam. The beam is formed by a high-pressure value which is used as gas inlet in an otherwise conventional hot-filament reactor. The growth rate of the films as well as the typical size of the microcrystallites are independent of the stagnation pressure behind the nozzle of the valve as long as the background pressure and the gas flow through the chamber are kept constant. In contrast, a drastic change in texture formation is found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324083
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  • 16
    Electronic Resource
    Electronic Resource
    Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser (1993)
    Springer
    Applied physics 57 (1993), S. 181-185 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331442
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  • 17
    Electronic Resource
    Electronic Resource
    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 353-361 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sb/Ni multilayers of 200 nm total thickness were ion-beam mixed with 900 keV Xe++ or 600 keV Ar++ ions using fluences up to 1016 ions/cm2. The formation of crystalline intermetallic phases was observed by X-ray diffraction (XRD). To investigate, on a microscopic scale, the mixing-effects the perturbed angular correlation (PAC) technique was applied using some 1012 implanted radioactive 111In ions. The different phases were identified in the PAC spectra by comparison with those taken for single-phase material of intermetallic Ni/Sb compounds and pure Ni and Sb. After the 111In implantation usually up to 50% of the probes are found with PAC-parameters typical for the single metallic layers. The rest of the probes showed a complex mixture of electric field gradients (EFG). During ion-beam mixing this fraction increased to 100%. In some experiments individual EFGs were resolved indicating the formation of crystalline NiSb and Ni5Sb2 intermetallic phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332289
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  • 18
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    The growth of crystalline vapor deposited carbon-60 thin films (1993)
    Springer
    Applied physics 56 (1993), S. 185-192 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films (25-2500 Å) of C60 molecules have been deposited on both (001) NaCl and mica substrates at varying temperatures by resistive evaporation. Both electron diffraction and high resolution microscopy have been used to assess the degree of crystallinity, the orientational ordering and the nature of the defects present in these face-centered-cubic films. For NaCl, optimum conditions yielded polycrystalline films with a tendency towards a 〈110〉 orientation, while for mica, extended single crystal films have been fabricated which exhibit a 〈111〉 direction normal to the film surface.
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    URL: http://dx.doi.org/10.1007/BF00539472
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  • 19
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    Optical and structural properties of thin films deposited from laser fused Zirconia, Hafnia, and Yttria (1992)
    Springer
    Applied physics 54 (1992), S. 533-537 
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    ISSN: 1432-0630
    Keywords: 78.65 ; 68.55 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical and structural properties of films deposited from laser sintered Zirconia (ZrO2), Hafnia (HfO2), and Yttria (Y2O3) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO2 films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO2 films deposited from the laser sintered material. HfO2 and Y2O3 films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO2 and Y2O3 prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO2 films were found to be amorphous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324335
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  • 20
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    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
    Springer
    Applied physics 54 (1992), S. 527-532 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
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    URL: http://dx.doi.org/10.1007/BF00324334
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  • 21
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    Enhanced adhesion of metal films on PET after UV-laser treatment (1992)
    Springer
    Applied physics 55 (1992), S. 391-392 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adhesion-force of thin metal films on PET foils can be significantly improved by UV excimer-laser irradiation of the polymer surface prior to metal deposition. The laser fluences required are well below the ablation threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324090
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  • 22
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 343-351 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on the ion-beam mixing processes of Sb/Ni marker layers and bilayers under the irradiation of ions ranging from He to Pb, at 80 K and at room temperature. The concentration profiles are obtained by Rutherford backscattering spectroscopy with 900 keV α-particles. At 80 K, the bilayer mixing rates cannot be reproduced by purely ballistic mixing; the essentially linear scaling of the bilayer mixing rate with the energy F D deposited at the interface points to local spike formation. A transition to global spike formation seems to be visible for the Pb-irradiations. Additional mixing effects at 300 K are due to radiation enhanced diffusion and scale with √F D. The marker mixing rates at 80 K are reproduced by the ballistic mixing approach, but are equally well described by local spike models. High fluence Xe-irradiations of Sb/Ni bilayers lead to intermetallic phases in the interface region as verified by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332288
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  • 23
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    In0.2Ga0.8As/GaAs interface revealed by an AlAs marker layer (1993)
    Springer
    Applied physics 57 (1993), S. 401-405 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 57.12
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A detailed analysis of the microstructure of layered semiconductor heterostructures is only possible if the interface between the various layers can be accurately located. Microstructural features whose characterisation is dependent on the location of the interface include the planarity and width of the layers, the composition profile and the geometry of misfit dislocations (in the particular case of lattice mismatched heterostructures). We report on an investigation to image, at high resolution in the transmission electron microscope, the interface in an In0.2Ga0.8As/GaAs structure grown by molecular beam epitaxy. The difficulty in locating the interface, due to similarity in electron optical behaviour of GaAs and In0.2Ga0.8As when imaged in a 〈110〉 direction, was overcome by incorporating into the structure a “marker layer” of AlAs two unit cells thick (11.4 Å in total) between the GaAs and the In0.2Ga0.8As layers. Lattice fringe images of an In0.2Ga0.8As/AlAs/GaAs structure are presented which show, at near atomic resolution, the location of the misfit dislocations relative to the In0.2Ga0.8As/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331778
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  • 24
    Electronic Resource
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    Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films (1993)
    Springer
    Applied physics 57 (1993), S. 567-572 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 72.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pb1−x−y Sn x Ge y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ〈20μm. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10−2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×1013 cm Hz1/2 W−1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 1012 cm−2 s−1 to 1018 cm−2 s−1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331760
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  • 25
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    Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samples (1993)
    Springer
    Applied physics 56 (1993), S. 391-396 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20.D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 Ω. At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324361
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  • 26
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    Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation (1992)
    Springer
    Applied physics 54 (1992), S. 293-299 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60F ; 78.65J ; 81.15E
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this α-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323853
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  • 27
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    Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers (1993)
    Springer
    Applied physics 57 (1993), S. 195-197 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two kinds of reactively evaporated titanium nitride films with columnar (B 0 films) and fine-grained (B + films) film structures, respectively, have been examined as diffusion barriers for preventing aluminium diffusion. The aluminium diffusion profiles have been investigated by 2 MeV 4He+ Rutherford backscattering spectrometry (RBS) at temperatures up to 550° C. The diffusivity from 300° C to 550° C is: D[m2s−1]=3×10−18 exp[−30/(RT)] in B 0 layers and D[m2s−1]=1.4×10−16 exp[−48/(RT)] in B + TiN layers. The activation-energy values determined indicate a grain boundary diffusion mechanism. The difference between the diffusion values is determined implicitly by the microstructure of the layers. Thus, the porous B 0 layers contain a considerable amount of oxygen absorbed in the intercolumnar voids and distributed throughout the film thickness. As found by AES depth profiling, this oxygen supply allows the formation of Al2O3 during annealing the latter preventing the subsequent diffusion of the aluminium atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331444
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  • 28
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    Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the 〈100〉 and the 〈110〉 projection (1993)
    Springer
    Applied physics 57 (1993), S. 393-400 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface microstructure of AlAs/GaAs quantum wells grown by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). High-resolution transmission electron microscopy (HRTEM) yields information about the width of the chemical transition between the binary components and about the lateral step distances along the interface. The chemical composition is quantitatively determined by the application of a pattern recognition procedure based on the Fourier transformation of image unit cells. Along the 〈100〉 zone axis the composition across the interfaces is obtained with a precision of ±10 atomic percent and with a spatial resolution of 0.28 nm. Despite a lower chemical sensitivity a quantitative chemical analysis was also carried out for images along the 〈110〉 projection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331777
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  • 29
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    Atomic-resolution imaging and spectroscopy of semiconductor interfaces (1993)
    Springer
    Applied physics 57 (1993), S. 385-391 
    Details
    ISSN: 1432-0630
    Keywords: 61.14 ; 68.48 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Incoherent Z-contrast imaging uses a high-angle annular detector to collect only highly local, incoherently generated scattering with the result that images become dependent on intensities, not phases. No model structures are required for a first-order structure determination, and the images remain intuitively interpretable even at interfaces. Under suitable conditions, incoherently generated inelastic scattering may be collected simultaneously with a large-aperture axial spectrometer, and, by using the Z-contrast image to locate the scanning transmission electron microscope (STEM) probe over selected atomic columns, can provide an atomic-resolution chemical analysis. This is demonstrated with reference to an epitaxial CoSi2/Si(100) interface, achieving a 2.7 Å spatial resolution. Recent insights into the growth and relaxation of strained Si-Ge epitaxial films are described, highlighting the role of stress concentrations, and contrasting the case of a free surface with that of a surface constrained by an oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331776
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  • 30
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    Surface structure of β-FeSi2(101) epitaxially grown on Si(111) (1993)
    Springer
    Applied physics 57 (1993), S. 477-482 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface morphology and structure of β-FeSi2(101) films epitaxially grown on Si(111) has been studied by means of Scanning Tunneling Microscopy (STM). The films are formed by large crystallites which are single domain. Each crystallite has only one of the three possible azimuthal orientations with respect to the substrate. A large density of planar defects, however, is detected on top of each crystallite. They are assigned to intrinsic stacking faults and their existence seems hard to avoid. This high density of intrinsic defects casts serious doubts on the use of β-FeSi2 as an optoelectronic material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331745
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  • 31
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    Deposition and characterization of diamond epitaxial thin films on silicon substrates (1993)
    Springer
    Applied physics 57 (1993), S. 483-489 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331746
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  • 32
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    Laser and thermal processing for Ti:LiNbO3 waveguide fabrication (1993)
    Springer
    Applied physics 56 (1993), S. 349-351 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ti diffusion into LiNbO3 single crystal was studied as a result of Ruby laser irradiation of a metallic Ti thin film covering the crystal surface and subsequent thermal processing in a furnace. Different regimes of irradiation and heating were used. SIMS analysis was employed for investigation of the treatment. The combined method used proved to be able to form waveguides of 3–4 μm thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324354
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  • 33
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    p-Type doping of diamond films with a novel organoboron source (1993)
    Springer
    Applied physics 56 (1993), S. 425-428 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p-Type polycrystalline diamond films were prepared by hot-filament CVD method using a liquid cyclic organic borinate ester as the doping source. The obtained films were identified as diamond films by means of SEM and Raman spectroscopy. The resistivity of the doped films can be adjusted by changing the temperature of the boron source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332575
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  • 34
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    Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 571-574 
    Details
    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331407
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