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  • Articles  (17)
  • thin films  (17)
  • 2005-2009
  • 1995-1999  (17)
  • Electrical Engineering, Measurement and Control Technology  (17)
  • 1
    Electronic Resource
    Electronic Resource
    Unusual Photon Energy Dependence of the Cooper Pair Breaking Rate in YBa2Cu3O7−δ Epitaxial Thin Films (1999)
    Springer
    Journal of superconductivity 12 (1999), S. 675-680 
    Details
    ISSN: 1572-9605
    Keywords: YBCO ; Cooper pair ; thin films ; ultrafast phenomena
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The transient photoimpedance response of epitaxial YBa2Cu3O7−δ thin films has been studied using 100 fs Ti:Sapphire laser pulse excitation. Both temperature and photon energy dependence of the fast optical response signal (whose temperature dependence can be explained by a kinetic inductance model involving Cooper pair breaking) were studied. The pair breaking rate is strongly photon energy-dependent, with a resonance around 1.5 eV with a width of only 100 meV, which is very surprising given the strong electron correlation in this metallic system and may be explained in terms of the stripe phase model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007708304186
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrasonic Micromotors Based on PZT Thin Films (1999)
    Springer
    Journal of electroceramics 3 (1999), S. 143-150 
    Details
    ISSN: 1573-8663
    Keywords: ultrasonic actuator ; thin films ; PZT ; integration
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The integration of piezoelectric Pb(Zr,Ti)O3 thin films on silicon substrates for ultrasonic motor applications is reviewed. With suitable buffer and bottom electrode layers the problems due to high processing temperatures in oxygen ambient can be handled. Reproducibility can be increased by stabilized electrode systems and seeding layers for PZT nucleation. Elastic fin micromotors of millimeter size have been fabricated. They achieve the necessary torques, low speeds, and battery voltage operation for applications in wristwatches. However, their efficiency needs to be improved. Better figure of merits of the material still can be achieved. Better designs with larger coupling factors are desirable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009943110147
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  • 3
    Electronic Resource
    Electronic Resource
    Ion Implantation of Optical Ferroelectrics (1999)
    Springer
    Journal of electroceramics 3 (1999), S. 179-193 
    Details
    ISSN: 1573-8663
    Keywords: ion implantation ; optical ferroelectrics ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We discuss ion implantation as a powerful non-equilibrium processing technology and show its potential for optical waveguide formation by damage engineering and by direct doping. Also the strong improvement of photorefractive properties by implantation-induced vacancies is demonstrated. Finally recent results of the growth of thin ferroelectric films by laser epitaxy and metal-organic vapor-phase epitaxy are presented. The combination of thin film growth techniques of optical ferroelectrics together with ion beam modification will prove important in this strongly advancing field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009951311965
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  • 4
    Electronic Resource
    Electronic Resource
    High Transition Temperature Superconducting Quantum Interference Devices: Basic Concepts, Fabrication and Applications (1999)
    Springer
    Journal of electroceramics 3 (1999), S. 195-212 
    Details
    ISSN: 1573-8663
    Keywords: superconducting quantum interference devices ; high transition temperature superconductors ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The performance of superconducting quantum interference devices (SQUIDs) and SQUID based magnetometers made from thin films of high transition temperature superconductors (HTS) has greatly improved since the discovery of HTS more than a decade ago. This fact is related to a steady improvement in the fabrication technology for HTS thin films and Josephson junctions. The state-of-the-art in HTS SQUID fabrication, device concepts and applications is briefly reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009903428803
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  • 5
    Electronic Resource
    Electronic Resource
    Full Wafer In Situ Deposition of Thallium Lead Superconductors (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 129-132 
    Details
    ISSN: 1572-9605
    Keywords: Superconductivity ; TIPbSrCaCuO ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of (Tl,Pb)Sr2Ca0.8Y0.2Cu2O7, and (Tl,Pb)Sr2CuO5 can be grown in a single step process which involves sputter deposition from a mixed oxide target and simultaneous thermal evaporation of Tl2O. The use of a radiant heater has allowed extension of this in situ deposition process to full LaAlO3 and NdGaO3 wafers. Variations in the composition of the deposited film is 〈 4% across a 50 mm wafer while the thickness uniformity is ≍ 8%. The highest transition temperature for a (Tl,Pb)Sr2Ca0.8Y0.2 Cu2O7 film thus far is 83 K. The RMS surface roughness of (Tl,Pb)Sr2CuO5 films is uniform across the wafer and approximately 1% of the film thickness for films 20 to 100 nm thick.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022683307738
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  • 6
    Electronic Resource
    Electronic Resource
    Novel Metal-Organic Chemical Vapor Deposition / T1F Annealing Route to Thin Films of Tl1Ba2Ca2Cu3O9+x (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 133-134 
    Details
    ISSN: 1572-9605
    Keywords: TI-1223 ; thin films ; MOCVD ; fluoride
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of TI1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet. and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep =methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TIF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc 〉 104 A/cm2 (77 K. 0 T) and at low temperatures retain Jc 〉 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022635424576
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of Tl-2201 Superconducting Thin Films on Single Crystal LaAlO3 (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 73-74 
    Details
    ISSN: 1572-9605
    Keywords: Thallium cuprates ; Tl-2201 ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The growth of Tl-2201 films on LaAlO3 single crystal substrates has been investigated. The synthesis involved precursor films made by laser ablation that were treated with Tl2O(g) in near-equilibrium conditions. By optimising the method of preparation, we obtained films that were highly smooth, c-axis oriented and epitaxial. The rocking curve of the (0010) reflection had a FWHM of 0.27°. A Tc of 92K was achieved without post-annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022638030511
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  • 8
    Electronic Resource
    Electronic Resource
    How the Surface Resistance R s of Patterned High-T c Superconducting Thin Film Is Affected by the Film's Edge (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 291-296 
    Details
    ISSN: 1572-9605
    Keywords: Surface impedance of high-T c superconductor ; thin films ; penetration depth ; critical current
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper defines an effective microwave surface resistance $$R_{\text{s}}^{{\text{eff}}}$$ for the nonuniform distribution of microwave surface resistance R s in the strip of a microstrip. It is proved that $$R_{\text{s}}^{{\text{eff}}}$$ is equivalent to the expression of R s used in experiments, and that the $$R_{\text{s}}^{{\text{eff}}}$$ is dominated by the edge part, i.e., the area of width λ2/2t from the strip edge, where λ is the magnetic penetration depth and t is the film thickness. Under the assumption that $$R_s \sim \left( {H_{{\text{rf}}}^y } \right)^n$$ where $$H_{{\text{rf}}}^y$$ is the component of rf magnetic field along the film thickness and n is an integer, the ratio of the contributions of the edge part and the rest of the strip to $$R_s^{{\text{eff}}}$$ is calculated by using an approximate analytical expression of the surface current density distribution J s in the strip and $$H_{{\text{rf}}}^y$$ calculated by the London equation. The effect of film's edge on R s was studied using a microstrip resonator. It is found that the perfectness of the edge could affect the magnitude of the power dependence of R s significantly, which agreed with our analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022696220632
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  • 9
    Electronic Resource
    Electronic Resource
    Optimisation of the electrochemical bath for growing device-quality CuInSe2 thin films (1998)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 8 (1998), S. 1-8 
    Details
    ISSN: 1057-9257
    Keywords: electrodeposition ; copper-indium-selenide ; thin films ; layer-by-layer deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The electrochemical bath used for growing device-quality CIS (CuInSe2) thin films by co-deposition as well as layer-by-layer (LBL) deposition was characterised and optimised with respect to the film properties. The bath composition was varied by changing the Cu, In and Se ion concentrations in specific ratios in both co-deposition and LBL deposition. The film properties were analysed using techniques such as SEM (scanning electron microscopy), EPMA (electron probe microanalysis), AES (Auger electron spectroscopy) and XRD (X-ray diffraction). The structural, morphological and compositional properties of the films were characterised and their variation is attributed to the bath composition and growth conditions. © 1998 John Wiley & Sons, Ltd.
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  • 10
    Electronic Resource
    Electronic Resource
    Thin films of novel polysiloxane copolymers substituted with stilbene and biphenylene side-chains: response to nitrogen dioxide (1998)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 8 (1998), S. 317-324 
    Details
    ISSN: 1057-9257
    Keywords: gas sensing ; nitrogen dioxide ; stilbene ; biphenyl ; UV-visible spectroscopy ; thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Thin films of a selection of stilbene and biphenyl side-chain substituted liquid crystal polymers based on polysiloxanes were deposited using an automated dip-coating technique and exposed to either 100 ppm NO2 gas and/or concentrated nitric acid vapour, the consequent effect being monitored by changes in the UV-visible spectra of the material. No effective response to NO2 was observed from the biphenylene analogue, but the stilbene derivatives showed spectral changes to suggest that an interaction occurs between the vapour and the bridge position of the stilbene side-chain. The stilbenes also show a marked pre-conditioning phenomenon upon exposure to nitric acid vapour prior to exposure to nitrogen dioxide. This procedure gives a material that has a more reversible response on exposure to NO2 gas than an anagolous film that has not been pre-treated. Copyright © 1998 John Wiley & Sons, Ltd.
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  • 11
    Electronic Resource
    Electronic Resource
    Optical Waveguiding Properties of (Pb,La)TiO3/Al2O3 Planar Structures (1998)
    Springer
    Journal of electroceramics 2 (1998), S. 105-111 
    Details
    ISSN: 1573-8663
    Keywords: lanthanum doped lead titanate ; thin films ; planar waveguide ; optical characterizations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thin films of lead lanthanum titanate (Pb,La)TiO3 have been grown by radio-frequency magnetron sputtering on (0001) Al2O3 substrates. The structure, the microstructure and the optical properties of the films have been investigated as a function of the postdeposition annealing. Films deposited at low temperatures crystallize to a perovskite phase after the annealing treatment from 500°C to 650°C. X-ray (θ−2θ) diffraction studies have shown that films are crystallized with a strong (111) orientation and the best crystalline structure is reported at 600°C. The optical properties were both demonstrated by spectrophotometry and prism coupling. PLT thin films with a transparency of 80% in the wavelength range 300–2000 nm have exhibited a refractive index of 2.38 @ 632.8 nm representing 97% of the bulk corresponding material. Investigation of optical propagation has been accomplished in a 10 mm long planar optical waveguide using a butt-coupling configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009931107964
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  • 12
    Electronic Resource
    Electronic Resource
    Electrochemical deposition and characterisation of CdTe thin films from an ethylene-glycol-based bath (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 29-34 
    Details
    ISSN: 1057-9257
    Keywords: CdTe ; thin films ; ethylene-glycol bath ; photocurrent ; flat-band potential ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: CdTe films were deposited on Ni and conducting glass (SnO2) substrates from an ethylene-glycol-based bath by galvanostatic and potentiostatic methods. The film composition and electrical properties depend on parameters such as working electrode potential current density, deposition temperature, substrate type and post-deposition treatments. It is possible to improve the grain size and stoichiometry of the film by post-deposition heat treatment in air. The conductivity type was determined from the photocurrent-working electrode potential behaviour of the film. Dark capacitance measurements in a 0.5 M H2SO4 solution at 10 kHz showed a linear behaviour, from which the flatband potential Vfb= -0.365 V vs. a saturated calomel electrode (SCE) and the doping density ND = 1.35 × 1018 cm-3 were determined. © 1997 John Wiley & Sons, Ltd.
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  • 13
    Electronic Resource
    Electronic Resource
    Infrared conductivity in the normal state of cuprate thin films (1996)
    Springer
    Journal of superconductivity 9 (1996), S. 3-6 
    Details
    ISSN: 1572-9605
    Keywords: High-T c superconductors ; reflectivity ; infrared ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper summarizes the main features of the infrared conductivity spectra in the 500–7000 cm−1 range derived from room-temperature reflectivity measurements performed on a variety of thin films (YBa2Cu3O7, BiSrCaCuO). The conductivity of these samples decreases with frequency as a power law with an exponent ∼0.7, and the scattering rate increases linearly with frequency. A detailed comparison with the conductivity for the marginal Fermi liquid (Abrahams, Littlewood, and Varma) and for the Luttinger liquid (Anderson) is performed. In the former case, the effect of temperature appears crucial even in this energy range (ω≥T) and allows one to achieve satisfactory fits. In the latter case, both the conductivity and the scattering rate may be accounted for by a single parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00728415
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  • 14
    Electronic Resource
    Electronic Resource
    Low-temperature metalorganic chemical vapour deposition of AlN for surface passivation of GaAs (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 127-134 
    Details
    ISSN: 1057-9257
    Keywords: aluminium nitride ; metalorganic chemical vapour deposition ; MOCVD ; gallium arsenide ; surface passivation ; insulating films ; thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Aluminium nitride (AlN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AlN films were obtained at growth temperatures around 400°C. At the AlN-GaAs interface, three deep trap levels were found: 0.6 eV (DL1) and 0.9 eV (DL2) below the conduction band minimum and 0.5 eV (DL3) above the valence band maximum. The number of DL1 levels was reduced by preparing As-dimer-stabilised surfaces of GaAs. The capture cross-sections and time constants of DL1-DL3 suggest that these levels originated from point defects, not from precipitates or disorder. Neither precipitation nor reaction was detectable by Auger electron spectroscopy after annealing at 900°C for 20 min, indicating that the AlN-GaAs interfaces are thermally stable. These results demonstrate that these AlN films are applicable as capping films for processing GaAs as well as passivation films.
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  • 15
    Electronic Resource
    Electronic Resource
    Processing and characterisation of PECVD silicon nitride films (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 147-150 
    Details
    ISSN: 1057-9257
    Keywords: PECVD ; silicon nitride ; thin films ; SiH4 ; NH3 ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Amorphous Si-N films are synthesised from an NH3/SiH4 gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (34 ± 4 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400°C; (ii) RF power density, 0.08-0.35 W cm-2; (iii) NH3/SiH4 flow ratio, 40:400-40: 1200 ml min-1. Fundamental properties of the Si-N films are characterised through elemental composition, chemical speciation, optical and electrical properties, all of which are dependent on the process parameters.
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  • 16
    Electronic Resource
    Electronic Resource
    Silica deposition by excimer-laser-induced chemical vapour deposition in perpendicular configuration (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 83-92 
    Details
    ISSN: 1057-9257
    Keywords: silicon dioxide ; thin films ; excimer laser ; chemical vapour deposition (CVD) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Silicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (λ = 193 nm) excimer laser beam in a SiH4 and N2O atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas composition, substrate temperature, laser pulse energy, pulse repetition rate, total pressure and gas flow rate) has been performed. The process is photolytically activated in the gas phase and the diffusion of photodecomposed precursor species towards the surface plays an important limiting role. The N2O/SiH4 ratio mainly controls the film composition; for ratios above 40, stoichiometric silica may be obtained, as confirmed by Rutherford backscattering (RBS) measurements. The role of the surface temperature in the growth kinetics is not critical, so that deposition of films is possible down to substrate temperatures as low as 70°C. Nevertheless, the density of the films varies greatly with the substrate temperature. The fact that no Si(SINGLE BOND)H vibration was detected with Fourier transform infrared (FTIR) spectrophotometry is surprising, since hydrogen incorporation is a very typical phenomenon encountered in most silane systems. This effect is probably associated with the ultraviolet photon irradiation of the adsorbed species and the film as it grows, thus breaking bonds and affecting the bond structure of the film.
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  • 17
    Electronic Resource
    Electronic Resource
    TEOS-based PECVD of silicon dioxide for VLSI applications (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 73-82 
    Details
    ISSN: 1057-9257
    Keywords: TEOS ; silicon dioxide ; PECVD ; microwave plasma ; thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Silicon dioxide films deposited from tetraethylorthosilicate (TEOS) using plasma-enhanced chemical vapour deposition (PECVD) are reviewed. The effect of the presence of oxygen on the film deposition rate and mechanism and the physical properties of the films, particularly the step coverage properties (conformality), are discussed in detail. Structural characterisation of the films has been carried out via etch rate measurements, infrared transmission spectroscopy, X-ray photoelectron spectroscopy (XPS) and Auger and secondary ion mass spectroscopy (SIMS) analysis. Electrical properties, i.e. resistivity, breakdown strength, fixed oxide charge density, interface state density and trapping behaviour, have been evaluated using metal-oxide-semiconductor (MOS) structures fabricated using the deposited oxides. Films deposited by microwave plasma-enhanced decomposition of TEOS in the presence of oxygen have been found to be comparable with standard silane-based low-pressure chemical vapour deposition (LPCVD) and PECVD oxides. It has been shown that films deposited on thin native oxides grown by either in situ plasma oxidation or low-temperature thermal oxidation exhibit excellent electrical properties.
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