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  • 1
    Publikationsdatum: 2016-07-13
    Beschreibung: In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.
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  • 2
    facet.materialart.
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    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-13
    Beschreibung: Based on electromagnetic scattering theory, a model of superscatterer enhanced distant wireless power transfer (WPT) device has designed and analyzed with the concept of transformation optics. The numerical results obtained through a series expansion method reveal that a properly designed ss-WPT has high efficiency for long transfer distances as well as a wide transfer range. The transfer distance can be further enlarged by fine tuning of the design. These effects can be explained qualitatively through the study of magnetic flux.
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  • 3
    Publikationsdatum: 2016-07-13
    Beschreibung: In this work, we report enhanced power conversion efficiency (PCE) of bulk heterojunction polymer solar cells by Förster resonance energy transfer (FRET) from samarium-doped luminescent gadolinium orthovanadate (GdVO 4 :Sm 3+ ) quantum dots (QDs) to polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) polymer. The photoluminescence emission spectrum of GdVO 4 :Sm 3+ QDs overlaps with the absorption spectrum of PTB7, leading to FRET from GdVO 4 :Sm 3+ to PTB7, and significant enhancements in the charge-carrier density of excited and polaronic states of PTB7 are observed. This was confirmed by means of femtosecond transient absorption spectroscopy. The FRET from GdVO 4 :Sm 3+ QDs to PTB7 led to a remarkable increase in the power conversion efficiency (PCE) of PTB7:GdVO 4 :Sm 3+ :PC 71 BM ([6,6]-phenyl-C 71 -butyric acid methyl ester) polymer solar cells. The PCE in optimized ternary blend PTB7:GdVO 4 :Sm 3+ :PC 71 BM (1:0.1:1.5) is increased to 8.8% from 7.2% in PTB7:PC 71 BM. This work demonstrates the potential of rare-earth based luminescent QDs in enhancing the PCE of polymer solar cells.
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  • 4
    Publikationsdatum: 2016-07-13
    Beschreibung: We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO 2 /vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO 2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1  μ A/ μ m between graphene flakes. These findings are important for the miniaturization of atomically thin devices.
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  • 5
    Publikationsdatum: 2016-07-13
    Beschreibung: The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.
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  • 6
    Publikationsdatum: 2016-07-13
    Beschreibung: We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe 2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.
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  • 7
    Publikationsdatum: 2016-07-13
    Beschreibung: High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.
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  • 8
    Publikationsdatum: 2016-07-13
    Beschreibung: Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 10 15  cm −2 and 1 × 10 17  cm −2 . Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60  μ m. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.
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  • 9
    Publikationsdatum: 2016-07-13
    Beschreibung: In this letter, we investigate the origin of the spatial inhomogeneity of the photoluminescence (PL) intensity maps obtained on thin-film solar cells. Based on a hyperspectral imager setup, we record an absolute map of the quasi-Fermi level splitting Δμ by applying the generalized Planck's law. Then, using scanning confocal microscopy, we perform spatially and time-resolved photoluminescence measurements. This allowed us to quantify and map the micrometric fluctuations of the trapping defect density within these solar cells. Finally, we demonstrate the existence of a direct correlation between the spatial fluctuations of the quasi-Fermi level splitting and the trapping defect density. The latter was found to be correlated with the frequently reported spatially inhomogeneous PL maps of thin-film solar cells. Based on the observed correlation, we can quantify the local losses in quasi-Fermi level splitting induced by the spatial distribution of the trapping defects.
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  • 10
    Publikationsdatum: 2016-07-13
    Beschreibung: Nonlinear ultrasonic Lamb waves are popular to characterize the nonlinearity of materials. However, the widely used nonlinear Lamb mode suffers from two associated complications: inherent dispersive and multimode natures. To overcome these, the symmetric Lamb mode (S0) at low frequency region is explored. At the low frequency region, the S0 mode is little dispersive and easy to generate. However, the secondary mode still exists, and increases linearly for significant distance. Numerical simulations and experiments are used to validate the nonlinear features and therefore demonstrate an easy alternative for nonlinear Lamb wave applications.
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  • 11
    Publikationsdatum: 2016-07-13
    Beschreibung: Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc–Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc–Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.
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  • 12
    Publikationsdatum: 2016-07-13
    Beschreibung: The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm 2 /V s when the electrons passed through the n-GaN and the patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.
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  • 13
    Publikationsdatum: 2016-07-14
    Beschreibung: By combining substrate-free structures with anodic bonding technology, we present a simple and efficient micro-electro-mechanical system (MEMS) thermal shear stress sensor. Significantly, the resulting depth of the vacuum cavity of the sensor is determined by the thickness of the silicon substrate at which Si is removed by the anisotropic wet etching process. Compared with the sensor based on a sacrificial layer technique, the proposed MEMS thermal shear-stress sensor exhibits dramatically improved sensitivity due to the much larger vacuum cavity depth. The fabricated MEMS thermal shear-stress sensor with a vacuum cavity depth as large as 525  μ m and a vacuum of 5 × 10 −2  Pa exhibits a sensitivity of 184.5 mV/Pa and a response time of 180  μ s. We also experimentally demonstrate that the sensor power is indeed proportional to the 1/3-power of the applied shear stress. The substrate-free structures offer the ability to precisely measure the shear stress fluctuations in low speed turbulent boundary layer wind tunnels.
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  • 14
    Publikationsdatum: 2016-07-14
    Beschreibung: Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O N -H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O N can naturally account for the “super-recovery” in the peak transconductance.
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  • 15
    Publikationsdatum: 2016-07-14
    Beschreibung: Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al 2 O 3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al 2 O 3 (0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al 2 O 3 ⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO 2 /Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al 2 O 3 (0001) substrates in multiple growth and transfer cycles.
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  • 16
    Publikationsdatum: 2016-07-14
    Beschreibung: Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy distributions (IEDs) measured at an electrode depends sensitively on ion velocities upstream, at the presheath/sheath boundary. By measuring this amplitude, the velocities at which ions exit the presheath can be determined and long-standing controversies regarding presheath transport can be resolved. Here, IEDs measured in rf-biased, inductively coupled plasmas in CF 4 gas determined the presheath exit velocities of all significant positive ions: CF 3 + , CF 2 + , CF + , and F + . At higher bias voltages, we detected essentially the same velocity for all four ions. For all ions, measured velocities were significantly lower than the Bohm velocity and the electropositive ion sound speed. Neither is an accurate boundary condition for rf sheaths in electronegative gases: under certain low-frequency, high-voltage criteria defined here, either yields large errors in predicted IEDs. These results indicate that many widely used sheath models will need to be revised.
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  • 17
    Publikationsdatum: 2016-07-14
    Beschreibung: Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.
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  • 18
    Publikationsdatum: 2016-07-14
    Beschreibung: We report a crucial step towards single-object cavity electrodynamics in the mid-infrared spectral range using resonators that borrow functionalities from antennas. Room-temperature strong light-matter coupling is demonstrated in the mid-infrared between an intersubband transition and an extremely reduced number of sub-wavelength resonators. By exploiting 3D plasmonic nano-antennas featuring an out-of-plane geometry, we observed strong light-matter coupling in a very low number of resonators: only 16, more than 100 times better than what reported to date in this spectral range. The modal volume addressed by each nano-antenna is sub-wavelength-sized and it encompasses only ≈4400 electrons.
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  • 19
    Publikationsdatum: 2016-07-20
    Beschreibung: This paper reports a piezoelectric aluminum nitride (AlN) based micro-machined infrasonic hydrophone. We have conducted a systematic design study for the hydrophone sensor to meet the stringent requirements of underwater applications. The hydrophone sensor was fabricated on a cavity silicon-on-insulator (SOI) substrate using an in-house CMOS-compatible AlN-on-SOI process platform. A 5 × 5 arrayed hydrophone sensor was characterized thoroughly using an industry-standard hydrophone calibration instrument. The results show that the hydrophone achieved a sound sensitivity of −182.5 dB ± 0.3 dB (ref. to 1 V rms/ μ Pa) and an eligible acceleration sensitivity of only −196.5 dB (ref. to 1 V rms/ μ g), respectively, a non-linearity of 0.11%, a noise resolution of 57.5 dB referenced to 1  μ Pa/√Hz within an ultra-low operation bandwidth of 10 Hz∼100 Hz, the highest noise resolution of micro-machined hydrophones reported to date, and better than traditional bulky hydrophones in terms of the same application. The size of the 5 × 5 arrayed hydrophone sensor is about 2 mm × 2 mm.
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  • 20
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-20
    Beschreibung: The development of miniaturized robotic swimmers is hindered by technical limitations in micro- and nanofabrication. To circumvent these limitations, we investigated the minimal geometrical requirements for swimming in low Reynolds number. Micro- and nanofabrication of complex shapes, such as helices, on a massive scale requires sophisticated state of the art technologies and has size limitations. In contrast, simple shaped structures, such as spherical particles, can be fabricated massively using chemical synthesis with relative ease. Here, simple microswimmers were fabricated using two microparticles with debris attached to their surface. The debris on the microswimmer's surface creates a geometry with two or more planes of symmetry, allowing the microswimmer to swim in bulk fluid at low Reynolds number. The microswimmers are magnetically actuated and controlled via a uniform rotating magnetic field generated by an approximate Helmholtz electromagnetic coil system. We characterized the microswimmer's velocity profile with respect to rotating frequency and analyzed the motion of the microswimmer using image processing. Finally, we demonstrated the controllability of the microswimmers by freely steering them in any desired directions.
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  • 21
    Publikationsdatum: 2016-07-21
    Beschreibung: We describe the principles of design, fabrication, and operation of a piezoelectric optomechanical crystal with which we demonstrate bi-directional conversion of energy between microwave and optical frequencies. The optomechanical crystal has an optical mode at 1523 nm co-located with a mechanical breathing mode at 3.8 GHz, with a measured optomechanical coupling strength g om /2π of 115 kHz. The breathing mode is driven and detected by curved interdigitated transducers that couple to a Lamb mode in suspended membranes on either end of the optomechanical crystal, allowing the external piezoelectric modulation of the optical signal as well as the converse, the detection of microwave electrical signals generated by a modulated optical signal. We compare measurements to theory where appropriate.
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  • 22
    Publikationsdatum: 2016-07-21
    Beschreibung: A large laser modulated resistance effect was observed in a Cu 2 O heterojunction of Cu 2 O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu 2 O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu 2 O and Si sides. The strong linear resistance change ratio of Cu 2 O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices.
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  • 23
    Publikationsdatum: 2016-07-23
    Beschreibung: An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85 Ga 0.15 N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on /I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.
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  • 24
    Publikationsdatum: 2016-07-23
    Beschreibung: We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y 3 Fe 5 O 12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.
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  • 25
    Publikationsdatum: 2016-07-23
    Beschreibung: We have investigated the detailed magnetic, magnetoelectric (ME), magnetodielectric (MD) and thermal expansion properties in Co 4 Nb 2 O 9 crystal. A magnetic-field-induced spin flop was observed below antiferromagnetic (AFM) transition temperature T N . Dielectric constant at applied magnetic field nearly diverges around the AFM transition, giving rise to a colossal MD effect as high as ∼138% around T N . Theoretical analysis of the ME and MD data revealed a major contribution of critical spin fluctuation to the colossal MD effect in Co 4 Nb 2 O 9 . These results suggest that linear ME materials with large ME coupling might be potentially used to realize large MD effect for future application.
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  • 26
    Publikationsdatum: 2016-07-23
    Beschreibung: GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10 8  cm −2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10 6  cm −2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.
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  • 27
    Publikationsdatum: 2016-07-23
    Beschreibung: The energy landscape of Zr at high hydrostatic pressure suggests that its transformation behavior is strongly pressure dependent. This is in contrast to the known transition mechanism in Ti, which is essentially independent of hydrostatic pressure. Generalized solid-state nudged elastic band calculations at constant pressure shows that α-Zr transforms like Ti only at the lowest pressure inside the stability field of ω-phase. Different pathways apply at higher pressures where the energy landscape contains several high barriers so that metastable states are expected, including the appearance of a transient bcc phase at ca. 23 GPa. The global driving force for the hcp-ω transition increases strongly with increasing pressure and reaches 23.7 meV/atom at 23 GPa. Much of this energy relates to the excess volume of the hcp phase compared with its ω phase.
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  • 28
    Publikationsdatum: 2016-07-23
    Beschreibung: We investigated the structure and magneto-transport properties of magnetic junctions using a Co 2 Fe(Ga 0.5 Ge 0.5 ) Heusler alloy as ferromagnetic electrodes and a Cu(In 0.8 Ga 0.2 )Se 2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product ( RA ) values between 0.3 and 3 Ω  μ m 2 . Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.
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  • 29
    Publikationsdatum: 2016-07-23
    Beschreibung: In this study, we present the experimental observation that polycrystalline Mn 2+x Fe 1−x Ga (x = −0.2, 0, 0.2, 0.4) compounds can be synthesized to be D0 19 -type (Ni 3 Sn-type) hexagonal structure with space group P63/mmc. A giant exchange bias field up to 1.32 kOe was achieved in hexagonal Mn 2 FeGa alloy at 5 K. A cluster glass state is confirmed by ac susceptibility measurement under different driving frequencies. Interestingly, robust horizontal and vertical shifts in magnetic hysteresis loop were simultaneously observed at 5 K under high cooling field up to 90 kOe. The large exchange bias is originated from the large exchange anisotropy between cluster glass phase and ferrimagnetic matrix. The vertical shift is thought to be attributed to the incomplete reversal of frozen cluster spins.
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  • 30
    Publikationsdatum: 2016-07-23
    Beschreibung: Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V oc with increasing fluence; however, the 80 nm cell showed no degradation in I sc for fluences up to 10 14  p + cm −2 . For the same exposure, the I sc of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.
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  • 31
    Publikationsdatum: 2016-07-23
    Beschreibung: Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.
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  • 32
    Publikationsdatum: 2016-07-23
    Beschreibung: Molecular dynamic simulations of Y 2 O 3 in bcc Fe and transmission electron microscopy (TEM) observations were used to understand the structure of Y 2 O 3 nano-clusters in an oxide dispersion strengthened steel matrix. The study showed that Y 2 O 3 nano-clusters below 2 nm were completely disordered. Y 2 O 3 nano-clusters above 2 nm, however, form a core-shell structure, with a shell thickness of 0.5–0.7 nm that is independent of nano-cluster size. Y 2 O 3 nano-clusters were surrounded by off-lattice Fe atoms, further increasing the stability of these nano-clusters. TEM was used to corroborate our simulation results and showed a crossover from a disordered nano-cluster to a core-shell structure.
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  • 33
    Publikationsdatum: 2016-07-23
    Beschreibung: In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.
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  • 34
    Publikationsdatum: 2016-07-23
    Beschreibung: Sensitive visualization and conformational control of long, delicate biopolymers present critical challenges to emerging biotechnologies and biophysical studies. Next-generation nanofluidic manipulation platforms strive to maintain the structural integrity of genomic DNA prior to analysis but can face challenges in device clogging, molecular breakage, and single-label detection. We address these challenges by integrating the Convex Lens-induced Confinement (CLiC) technique with a suite of nanotopographies embedded within thin-glass nanofluidic chambers. We gently load DNA polymers into open-face nanogrooves in linear, concentric circular, and ring array formats and perform imaging with single-fluorophore sensitivity. We use ring-shaped nanogrooves to access and visualize confinement-enhanced self-ligation of long DNA polymers. We use concentric circular nanogrooves to enable hour-long observations of polymers at constant confinement in a geometry which eliminates the confinement gradient which causes drift and can alter molecular conformations and interactions. Taken together, this work opens doors to myriad biophysical studies and biotechnologies which operate on the nanoscale.
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  • 35
    Publikationsdatum: 2016-07-23
    Beschreibung: A general, substrate-independent method for plasma deposition of nanostructured, crystalline metal oxides is presented. The technique uses a flow-through, micro-hollow cathode plasma discharge (supersonic microplasma jet) with a “remote” ring anode to deliver a highly directed flux of growth species to the substrate. A diverse range of nanostructured materials (e.g., CuO, α-Fe 2 O 3 , and NiO) can be deposited on any room temperature surface, e.g., conductors, insulators, plastics, fibers, and patterned surfaces, in a conformal fashion. The effects of deposition conditions, substrate type, and patterning on film morphology, nanostructure, and surface coverage are highlighted. The synthesis approach presented herein provides a general and tunable method to deposit a variety of functional and hierarchical metal oxide materials on many different surfaces. High surface area, conversion-type CuO electrodes for Li-ion batteries are demonstrated as a proof-of-concept example.
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  • 36
    Publikationsdatum: 2016-07-23
    Beschreibung: We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.
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  • 37
    Publikationsdatum: 2016-07-23
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  • 38
    Publikationsdatum: 2016-07-23
    Beschreibung: Recent defect calculations suggest that the open circuit voltage of CuGaSe 2 solar cells can be limited by deep intrinsic electron traps by Ga Cu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe 2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.
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  • 39
    Publikationsdatum: 2016-07-23
    Beschreibung: We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3  μ s for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.
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  • 40
    Publikationsdatum: 2016-07-23
    Beschreibung: We design and implement 3D-lumped element microwave cavities that spatially focus magnetic fields to a small mode volume. They allow coherent and uniform coupling to electron spins hosted by nitrogen vacancy centers in diamond. We achieve large homogeneous single spin coupling rates, with an enhancement of more than one order of magnitude compared to standard 3D cavities with a fundamental resonance at 3 GHz. Finite element simulations confirm that the magnetic field distribution is homogeneous throughout the entire sample volume, with a root mean square deviation of 1.54%. With a sample containing 10 17 nitrogen vacancy electron spins, we achieve a collective coupling strength of Ω = 12 MHz, a cooperativity factor C = 27, and clearly enter the strong coupling regime. This allows to interface a macroscopic spin ensemble with microwave circuits, and the homogeneous Rabi frequency paves the way to manipulate the full ensemble population in a coherent way.
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  • 41
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-23
    Beschreibung: For macroscopically manipulating heat flow at will, thermal metamaterials have opened a practical way, which possesses a single function, such as either cloaking or concentrating the flow of heat even though environmental temperature varies. By developing a theory of transformation heat transfer for multiple functions, here we introduce the concept of intelligent thermal metamaterials with a dual function, which is in contrast to the existing thermal metamaterials with single functions. By assembling homogeneous isotropic materials and shape-memory alloys, we experimentally fabricate a kind of intelligent thermal metamaterials, which can automatically change from a cloak (or concentrator) to a concentrator (or cloak) when the environmental temperature changes. This work paves an efficient way for a controllable gradient of heat, and also provides guidance both for arbitrarily manipulating the flow of heat and for efficiently designing similar intelligent metamaterials in other fields.
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  • 42
    Publikationsdatum: 2016-07-23
    Beschreibung: We have directly probed the dynamic behavior of a single ferromagnetic disk as a function of neighboring disk interactions and lattice configurations using micro-focused Brillouin light scattering spectroscopy. At high field, when the disks are in the single domain state, the dynamic behavior of the disk under probe is strongly influenced by the neighboring disk configurations due to magnetostatic interactions. In particular, the changing landscape of dipolar field from neighboring disks as a function of lattice configurations plays a key role in modifying the resultant internal field of the disk under probe. When the disks are in the vortex state at remanence, the effects of dipolar fields on the disk under probe vanish resulting in a negligible configurational anisotropy. Micromagnetic simulations and stray field models are in good agreement with the experimental results.
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  • 43
    Publikationsdatum: 2016-07-23
    Beschreibung: Combining experiment and theory, we investigate how a naturally created heterojunction ( pn junction) at a graphene and metallic contact interface is modulated via interaction with molecular hydrogen (H 2 ). Due to an electrostatic interaction, metallic electrodes induce pn junctions in graphene, leading to an asymmetrical resistance in electronic transport for electrons and holes. We report that the asymmetry in the resistance can be tuned in a reversible manner by exposing graphene devices to H 2 . The interaction between the H 2 and graphene occurs solely at the graphene-contact pn junction and induces a modification on the electrostatic interaction between graphene and metallic contacts. We explain the experimental data with theory providing information concerning the length of the heterojunction and how it changes as a function of H 2 adsorption. Our results are valuable for understanding the nature of the metal-graphene interfaces and have potential application for selective sensors of molecular hydrogen.
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  • 44
    Publikationsdatum: 2016-07-23
    Beschreibung: We present a design of multilayer core-shell nanostructures formed by introducing a dielectric gap shell layer between a silver core and a monolayer graphene shell for spectrally selective absorption enhancement in graphene based on an unconventional Fano effect. We demonstrate that this mechanism enables great flexibility in the choice of parameters of the proposed structures for the achievement of a relatively large and narrow-band absorption enhancement in graphene. Furthermore, we also demonstrate that such a spectrally selective absorption enhancement in graphene is highly tunable and can be optimized by controlling either the core or the shell parameters. These unique absorption properties may have applications in color-selective photodetectors and image sensors.
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  • 45
    Publikationsdatum: 2016-07-23
    Beschreibung: In this study, we present the influence of the embedding matrix on the relaxation of Fe(phen) 2 (NCS) 2 (phen = 1,10-phenanthroline) spin-transition microparticles as revealed by experiments and provide an explanation within the framework of an elastic model based on a Monte-Carlo method. Experiments show that the shape of the high-spin → low-spin relaxation curves is drastically changed when the particles are dispersed in glycerol. This effect was considered in the model by means of interactions between the microparticles and the matrix. A faster start of the relaxation for microparticles embedded in glycerol is due to an initial positive local pressure acting on the edge spin-crossover molecules from the matrix side. This local pressure diminishes and eventually becomes negative during relaxation, as an effect of the decrease of the volume of spin-crossover microparticles from high-spin to low-spin.
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  • 46
    Publikationsdatum: 2016-07-23
    Beschreibung: We present a method of forming shallow p- doping on a 4H-SiC surface by depositing a thin Al layer ( d  = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 10 17  cm −3 up to a depth of d ≤ 250 nm. I–V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n- type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51   eV and Δ ϕ B = 0.26   eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation ( activation ratio ∼ 2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.
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  • 47
    Publikationsdatum: 2016-07-23
    Beschreibung: We report on the detection of structural inhomogeneity across anode and cathode interfaces in electrically degraded reduced and oxidized Fe -doped SrTiO 3 (Fe:STO) single crystals by optical second harmonic generation (SHG) spectroscopy. SHG spectra were collected from several regions across the anode and cathode interfaces in both degraded reduced and oxidized Fe:STO crystals. We identify the formation of defect concentration gradients along both degraded reduced and oxidized anode interfaces. While the broken symmetries decrease from the outer region towards the central region of the reduced anode, the opposite trend is seen in the degraded oxidized anode. These results are attributed to the formation of centrosymmetric Fe 4+ :Ti 4+ -O 6 octahedral structures in the central region of the reduced sample's degraded anode and non-centrosymmetric Jahn-Teller distortions in the central region of the oxidized sample's degraded anode. The observed changes in SHG intensity from the outer region towards the central region of the degraded cathode interfaces is accompanied by a structural phase transition in the inner and outer regions, marked by strong changes to the s- polarized intensity spectra. We explain the SHG intensity changes by the formation of lower order symmetry Fe 3+ :Ti 3+ -O 6 structures in the outer region and a modification of the second-order nonlinear susceptibility near the central regions due to the clustering of dissociated oxygen vacancies. These significant structural and spatial inhomogeneities are linked directly to the field-driven migration of oxygen ions and vacancies.
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  • 48
    Publikationsdatum: 2016-07-26
    Beschreibung: Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density ( J sc ). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage ( V oc ). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.
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  • 49
    Publikationsdatum: 2016-07-26
    Beschreibung: We demonstrate a high-efficiency tunable acoustic absorber for low frequencies (
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  • 50
    Publikationsdatum: 2016-07-26
    Beschreibung: Micron-sized metal-coated polymer spheres are frequently used as filler particles in conductive composites for electronic interconnects. However, the intrinsic electrical resistivity of the spherical thin films has not been attainable due to deficiency in methods that eliminate the effect of contact resistance. In this work, a four-point probing method using vacuum compatible piezo-actuated micro robots was developed to directly investigate the electric properties of individual silver-coated spheres under real-time observation in a scanning electron microscope. Poly(methyl methacrylate) spheres with a diameter of 30  μ m and four different film thicknesses (270 nm, 150 nm, 100 nm, and 60 nm) were investigated. By multiplying the experimental results with geometrical correction factors obtained using finite element models, the resistivities of the thin films were estimated for the four thicknesses. These were higher than the resistivity of bulk silver.
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  • 51
    Publikationsdatum: 2016-07-26
    Beschreibung: The synthesis of a 50 unit cell thick n = 4 Sr n+1 Ti n O 3n+1 (Sr 5 Ti 4 O 13 ) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO 2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO 2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of 〉4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO 3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.
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  • 52
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-26
    Beschreibung: We implement a quantum random number generator based on a balanced homodyne measurement of vacuum fluctuations of the electromagnetic field. The digitized signal is directly processed with a fast randomness extraction scheme based on a linear feedback shift register. The random bit stream is continuously read in a computer at a rate of about 480 Mbit/s and passes an extended test suite for random numbers.
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  • 53
    Publikationsdatum: 2016-07-26
    Beschreibung: Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high- Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.
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  • 54
    Publikationsdatum: 2016-07-27
    Beschreibung: Metallic hierarchical texture was prepared by nickel-cobalt electro-deposition and subsequent replacement reaction to coat silver. Due to energetically favorable hydrocarbon adsorption on the silver film, contact angle of the surface increased gradually over time after exposure to laboratory air. The substrate became superhydrophobic after three days to aqueous droplets with various pH values. It was found that the surface remained stable after exposing to extreme temperatures in the wide range from −196 °C to 200 °C. Importantly, self-healing of superhydrophobicity can be easily accomplished and repeated in an ambient environment while hydrocarbon desorption occurred under high temperature. Furthermore, this approach can be easily applied to other conductive substrates.
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  • 55
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-27
    Beschreibung: We demonstrate that acoustic levitation can levitate spherical objects much larger than the acoustic wavelength in air. The acoustic levitation of an expanded polystyrene sphere of 50 mm in diameter, corresponding to 3.6 times the wavelength, is achieved by using three 25 kHz ultrasonic transducers arranged in a tripod fashion. In this configuration, a standing wave is created between the transducers and the sphere. The axial acoustic radiation force generated by each transducer on the sphere was modeled numerically as a function of the distance between the sphere and the transducer. The theoretical acoustic radiation force was verified experimentally in a setup consisting of an electronic scale and an ultrasonic transducer mounted on a motorized linear stage. The comparison between the numerical and experimental acoustic radiation forces presents a good agreement.
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  • 56
    Publikationsdatum: 2016-07-27
    Beschreibung: The standard “Kittel Law” for the thickness and shape of ferroelectric, ferroelastic, or ferromagnet domains assumes mechanical equilibrium. The present paper shows that such domains may be highly nonequilibrium, with unusual thicknesses and shapes. In lead germanate and multiferroic lead zirconate titanate iron tantalate domain wall instabilities resemble hydrodynamics (Richtmyer–Meshkov and Helfrich–Hurault, respectively).
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  • 57
    Publikationsdatum: 2016-07-27
    Beschreibung: The spin orbit torques (SOTs) in perpendicularly magnetized Co-Ni multilayers sandwiched between two heavy metals (HM) have been studied. By exploring various HM materials, we show an efficient enhancement or cancellation of the total SOT, depending on the combination of the two HM materials. The maximum SOT effective field is obtained in Pt/Co-Ni/W heterostructures. We also model our double HM system and show that the effective spin Hall angle has a peak value at certain HM thicknesses. Measuring the SOT in Pt/Co-Ni/W for various W thicknesses confirms an effective spin Hall angle up to 0.45 in our double HM system.
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  • 58
    Publikationsdatum: 2016-07-27
    Beschreibung: We investigate the dynamics of donor bound excitons (D°X A ) at T  = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ∼ 1.3 meV dipole-like energy shift of D°X A is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ∼24 nm as well as an effective area of the dislocation with a radius of ∼95 nm, where the recombination can be regarded as entirely non-radiative.
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  • 59
    Publikationsdatum: 2016-07-27
    Beschreibung: We have studied the magnetic order of highly strained (001)-oriented BiFeO 3 (BFO) thin films using 57 Fe Conversion Electron Mössbauer Spectrometry. From 90 K to 620 K the films exhibit a collinear antiferromagnetic structure, in contrast with the cycloidal structure observed in bulk BFO. Moreover, we find that both the planar magnetic anisotropy for compressive strain and out-of-plane anisotropy for tensile strain persist from 90 K up to the Néel temperature ( T N ), which itself shows only a weak strain dependence. An analysis of the line asymmetry of the paramagnetic doublet for temperatures above T N is used to reveal the strain-dependent rotation of the polarization direction, consistent with previous observations. Our results show that the lattice dynamics in BFO films are strongly strain-dependent, offering avenues toward acoustic phonon devices. Finally, we use the versatility of Mössbauer spectroscopy technique to reveal various multi-property features including magnetic states, polarization direction and elastic strain.
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  • 60
    Publikationsdatum: 2016-07-27
    Beschreibung: Ohmic contacts fabricated by regrowth of n + GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.
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  • 61
    Publikationsdatum: 2016-07-27
    Beschreibung: Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nW and 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
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  • 62
    Publikationsdatum: 2016-07-27
    Beschreibung: ZnO/ZnSe heterostructure parallel arrays on glass substrate were prepared through ultrathin layers electrodeposition method combining with annealing treatment. There are two essential factors for the formation of such kind of parallel arrays: the periodical change of charges and ions concentration, and the mutual equilibrium of electric repulsion at the growth front. The research for photoresponse characteristics of the heterostructure arrays demonstrates a UV/visible broad spectral response.
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  • 63
    Publikationsdatum: 2016-07-27
    Beschreibung: Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n H ) and extrinsic dopant concentration (N I , N Ag ) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n H . Upon substituting extrinsic dopants beyond a certain amount, the n H changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.
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  • 64
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-27
    Beschreibung: In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2 v 3 band at 6046.95 cm −1 using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.
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  • 65
    Publikationsdatum: 2016-07-28
    Beschreibung: We have studied the electronic structure of the L 1 0 ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2 p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3 d states and the hybridization between the Fe 3 d and Pt 5 d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3 d states modifies the valence band electronic structure of the L 1 0 ordered FePt thin film through the Fe 3 d -Pt 5 d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3 d states and the Fe 3 d -Pt 5 d hybridization as well as the spin-orbit interaction in the Pt 5 d states play important roles in the perpendicular MCA for L 1 0 -FePt.
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  • 66
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-07-29
    Beschreibung: Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness ( h c ), etch depth ( t d ), and opening width ( p ) obey h c ≈ 1.06 p − 0.75 t d ; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.
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  • 67
    Publikationsdatum: 2016-07-29
    Beschreibung: To study the thin lubrication film around long bubbles with length-to-radius aspect ratio more than 10 in square capillaries, a chromatic interference method was developed. Three-dimensional profile of the lubrication film was acquired from moving long bubbles with the length-to-radius aspect ratio up to 500. The dynamics and profiles of the film were found to be dependent of the dimensionless downstream distance x of the long bubble. For 1 ≪ x ≪ Ca −1 , the film has a thickness of order Ca 2/3 at the center and order Ca 1 at the sides, while for x  ∼  Ca −1 , the film at the sides thins to order Ca 4/3 , which matches well with the existing theoretical results.
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  • 68
    Publikationsdatum: 2016-07-29
    Beschreibung: We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.
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  • 69
    Publikationsdatum: 2016-07-29
    Beschreibung: Polarization-controlled tip-enhanced near-field Raman spectroscopic imaging is demonstrated using two characteristic dipoles induced at a metallic nano-tip. The polarization generated at the tip can be considered as a single dipole that can be switched from s to p by modulating the incident laser polarization. The s -dipole achieves highly selective molecular orientation imaging, while p -polarization provides comprehensive imaging in all directions. We discuss the controllability of near-field polarizations through the evaluation of the dipole orientation induced at the nano-tip. Polarization control and switching in near-field imaging are of tremendous advantage, as they allow the study of the molecular orientations in a sample, along with spectroscopic information.
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  • 70
    Publikationsdatum: 2016-07-29
    Beschreibung: A hybrid structure of a graphene nanomesh with the gold nanodisks is studied to enhance the light absorption by the localized surface plasmon resonance. From the reflection spectra of the visible range for graphene nanomesh samples without and with nanodisks, it is found that the absorption of graphene nanomesh structures is greatly enhanced in the presence of gold nanodisks around the resonance wavelength. Simulation results based on the finite-difference time-domain method support the experimental observations. This study demonstrates the potential of constructing graphene based photodetectors with a high light absorption efficiency and wavelength selectivity.
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  • 71
    Publikationsdatum: 2016-07-29
    Beschreibung: The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO 2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg–Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO 2 dielectric layers has three-dimensional charge transport.
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  • 72
    Publikationsdatum: 2016-07-29
    Beschreibung: We report on the characterization of silica aerogel thermal optical nonlinearity, obtained by z-scan technique. The results show that typical silica aerogels have nonlinear optical coefficient similar to that of glass (≃10 −12 m 2 /W), with negligible optical nonlinear absorption. The nonlinear coefficient can be increased to values in the range of 10 −10 m 2 /W by embedding an absorbing dye in the aerogel. This value is one order of magnitude higher than that observed in the pure dye and in typical highly nonlinear materials like liquid crystals.
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  • 73
    Publikationsdatum: 2016-07-30
    Beschreibung: The structure and connectivity of cultured neuronal networks can be controlled by using micropatterned surfaces. Here, we demonstrate that the direction of signal propagation can be precisely controlled at a single-cell resolution by growing primary neurons on micropatterns. To achieve this, we first examined the process by which axons develop and how synapses form in micropatterned primary neurons using immunocytochemistry. By aligning asymmetric micropatterns with a marginal gap, it was possible to pattern primary neurons with a directed polarization axis at the single-cell level. We then examined how synapses develop on micropatterned hippocampal neurons. Three types of micropatterns with different numbers of short paths for dendrite growth were compared. A normal development in synapse density was observed when micropatterns with three or more short paths were used. Finally, we performed double patch clamp recordings on micropatterned neurons to confirm that these synapses are indeed functional, and that the neuronal signal is transmitted unidirectionally in the intended orientation. This work provides a practical guideline for patterning single neurons to design functional neuronal networks in vitro with the direction of signal propagation being controlled.
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  • 74
    Publikationsdatum: 2016-07-30
    Beschreibung: Diffraction gratings are used from micron to nanometer wavelengths as dispersing elements in optical instruments. At shorter wavelengths, crystals can be used as diffracting elements, but due to the 3D nature of the interaction with light are wavelength selective rather than wavelength dispersing. There is an urgent need to extend grating technology into the x-ray domain of wavelengths from 1 to 0.1 nm, but this requires the use of gratings that have a faceted surface in which the facet angles are very small, typically less than 1°. Small facet angles are also required in the extreme ultra-violet and soft x-ray energy ranges in free electron laser applications, in order to reduce power density below a critical damage threshold. In this work, we demonstrate a technique based on anisotropic etching of silicon designed to produce very small angle facets with a high degree of perfection.
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  • 75
    Publikationsdatum: 2016-07-30
    Beschreibung: In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.
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  • 76
    Publikationsdatum: 2016-07-30
    Beschreibung: A nonlinear wideband generator architecture by clamping the cantilever beam generator with a curve fixture is proposed. Devices with different nonlinear stiffness can be obtained by properly choosing the fixture curve according to the design requirements. Three available generator types are presented and discussed for polynomial curves. Experimental investigations show that the proposed mechanism effectively extends the operation bandwidth with good power performance. Especially, the simplicity and easy feasibility allow the mechanism to be widely applied for vibration generators in different scales and environments.
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  • 77
    Publikationsdatum: 2016-08-02
    Beschreibung: A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.
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  • 78
    Publikationsdatum: 2016-08-02
    Beschreibung: We report the direct growth of graphene on a dielectric SiO 2 surface by utilizing complementary metal oxide semiconductor compatible germane as a gas-phase catalyst. Results of Raman spectroscopy and XPS confirmed that the synthesized graphene consist of a sp 2 hybridized carbon network. We were able to fabricate graphene field effect transistors without the wet etching process, and the calculated mobility was ∼160 cm 2 /V·s at high carrier concentration ( n  = 3 × 10 12 cm −2 ). Furthermore, the crystallinity and morphology of graphene is easily controlled from single-layer graphene to graphene nanowall structures by adjusting the reaction conditions. The results of this study verify the promising catalytic graphene growth method on a non-catalytic insulating surface without metal contaminations.
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  • 79
    Publikationsdatum: 2016-08-02
    Beschreibung: Electrostatic ion acceleration across a diverging magnetic field, which is generated by a solenoid coil, permanent magnets, and a yoke between an upstream ring anode and a downstream off-axis hollow cathode, is investigated. The cathode is set in an almost magnetic-field-free region surrounded by a cusp. Inside the ring anode, an insulating wall is set to form an annular slit through which the working gas is injected along the anode inner surface, so the ionization of the working gas is enhanced there. By supplying 1.0 Aeq of argon as working gas with a discharge voltage of 225 V, the ion beam energy reached about 60% of a discharge voltage. In spite of this unique combination of electrodes and magnetic field, a large electrical potential drop is formed almost in the axial direction, located slightly upstream of the magnetic-field-free region. The ion beam current almost equals the equivalent working gas flow rate. These ion acceleration characteristics are useful for electric propulsion in space.
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  • 80
    Publikationsdatum: 2016-08-02
    Beschreibung: Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.
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  • 81
    Publikationsdatum: 2016-08-02
    Beschreibung: The charge transport mechanism of electron via traps in amorphous SiO 2 has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies W t = 1.6 eV, W opt = 3.2 eV, respectively, were determined. Charge flowing leads to oxygen vacancies generation, and the leakage current increases due to the increase of charge trap density. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. It is found that the oxygen vacancies act as electron traps in SiO 2 .
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  • 82
    Publikationsdatum: 2016-08-02
    Beschreibung: Particle separation plays an important role in microfluidic sample preparation for various biomedical applications. In this paper, we report a particle manipulation and separation scheme using a microfluidic device based on low-volume/low-voltage electrokinetic frequency modulation. Utilizing a circular micro-electrode array, both electroosmosis and dielectrophoresis can be contributed to manipulate particles in the device by controlling the frequency of applied sinusoidal travelling wave signals. Theoretical simulations based on finite-element methods are employed to establish fundamental understanding of the developed scheme. For experimental demonstration, polystyrene beads (6  μ m in diameter) and human promyelocytic leukaemia cells (HL-60) are used to validate the frequency-modulation effect. Furthermore, different diameter polystyrene beads (6  μ m and 10  μ m in diameter) are mixed to show potentials of precise particle separations (∼90% efficiency) by the reported frequency-controlled electrokinetic device. The developed technique can be exploited as an actuation scheme and particle manipulation method for microfluidic sample preparations of low ionic concentration samples.
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  • 83
    Publikationsdatum: 2016-08-02
    Beschreibung: We use powder X-ray diffraction to evaluate the temperature dependence of the crystalline properties during the magnetic phase transition of La(Fe,Mn,Si) 13 H z as a function of the Fe/Mn/Si ratio. Both the paramagnetic and ferromagnetic phases were observed as peak overlaps in the patterns around the Curie temperature ( T C ) occurring continuously in a temperature range of about 5 K around T C. Using the Williamson-Hall method, we evaluate the strain developing in the crystallites during the transition and find that it is associated with the growth of the paramagnetic phase as the transition occurs. Based on our measurements and microstructure analyses, we propose that cracking during the phase transition is due to or aggravated by the small content of a La-rich phase.
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  • 84
    Publikationsdatum: 2016-08-02
    Beschreibung: The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.
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  • 85
    facet.materialart.
    Unbekannt
    American Institute of Physics (AIP)
    Publikationsdatum: 2016-08-02
    Beschreibung: Index-near-zero materials can be used for effective photon management. They help to restrict the angle of acceptance, resulting in greatly enhanced light trapping limit. In addition, these materials also decrease the radiative recombination, leading to enhanced open circuit voltage and energy efficiency in direct bandgap solar cells.
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  • 86
    Publikationsdatum: 2016-08-02
    Beschreibung: An ultra-wideband and high-efficiency polarization rotator based on a metasurface is proposed in this paper. The unit cell of the proposed polarization rotator consists of two pairs of L-shaped metallic patches printed on a substrate, which is backed by a metallic ground and covered by a superstrate. The superstrate is composed of a dielectric layer and a pair of L-shaped metallic patches printed on the dielectric layer. The proposed polarization rotator can rotate the polarization of linearly polarized electromagnetic (EM) wave to its orthogonal counterpart after reflection when the incident EM wave is y-/x-polarized. Simulated results show that the polarization rotator can perform 90° polarization rotation with very high efficiency at seven different frequencies and achieve a polarization conversion ratio higher than 0.9 in the frequency range of 7.8–34.7 GHz at normal incidence. Good agreement between the experimental results and simulated ones has been obtained.
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  • 87
    Publikationsdatum: 2016-08-02
    Beschreibung: In this work, we describe an alternative strategy for the development of heat assisted magnetic recording media. In our approach, the need for a storage material with a temperature dependent anisotropy and to provide a read out signal is separated so that each function can be optimised independently. This is achieved by the use of an exchange bias structure where a conventional CoCrPt-SiO 2 recording layer is exchange biased to an underlayer of IrMn such that heating and cooling in the exchange field from the recording layer results in a shifted loop. This strategy requires the reorientation of the IrMn layer to allow coupling to the recording layer. This has been achieved by the use of an ultrathin (0.8 nm) layer of Co deposited beneath the IrMn layer. In this system, the information is in effect stored in the antiferromagnetic layer, and hence, there is no demagnetising field generated by the stored bits. A loop shift of 688 Oe has been achieved where both values of coercivity lie to one side of the origin and the information cannot be erased by a magnetic field.
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  • 88
    Publikationsdatum: 2016-08-02
    Beschreibung: One of the most intriguing aspects of glass-forming melts is the existence of specially separated regions whose dynamics can differ from each other by several orders of magnitude and is known as dynamic heterogeneity (DH). In this letter, we have studied the growth of DH in three glass-forming metallic melts with different glass-forming ability, packing density and viscosity. The results show that when the temperature approaches the melting point, the size of DH grows exponentially in good glass-forming melts but linearly in poor ones. Additionally, the growth of DH with packing density and viscosity in the binary melt shows similar behavior, but in the ternary melt no significant change in the growth of DH exists while the viscosity increased. Interestingly, at a packing density of approximately 0.531 ± 0.003, the growth of DH is much faster in the studied metallic melts. These results indicate that the packing density of glass-forming liquids is the dominant factor that governs the growth of DH in metallic melts.
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  • 89
    Publikationsdatum: 2016-08-02
    Beschreibung: We study surface ablation of dielectrics with single-shot few-cycle optical pulse (∼10 fs) in air, at intensities below and above the onset of air ionization. We perform 3D analysis and careful calibration of the fluence distribution at the laser focus, spanning from linear– to nonlinear– focusing regimes, enabling to thoroughly characterize the severe limitation of the fluence delivered onto the sample surface upon increase of incident pulse energy. Despite significant beam reshaping taking place at high fluence, we demonstrate that it is nevertheless possible to confidently predict the resulting crater profiles on fused silica surface, even in the regime of filamentation.
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  • 90
    Publikationsdatum: 2016-08-03
    Beschreibung: We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 (7 dB) at visible/near-infrared wavelengths selected by design.
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  • 91
    Publikationsdatum: 2016-08-03
    Beschreibung: In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.
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  • 92
    Publikationsdatum: 2016-08-03
    Beschreibung: We use magnetic-field-dependent features in the photoluminescence of negatively charged nitrogen-vacancy centers to measure magnetic fields without the use of microwaves. In particular, we present a magnetometer based on the level anti-crossing in the triplet ground state at 102.4 mT with a demonstrated noise floor of 6 nT/ Hz , limited by the intensity noise of the laser and the performance of the background-field power supply. The technique presented here can be useful in applications where the sensor is placed close to conductive materials, e.g., magnetic induction tomography or magnetic field mapping, and in remote-sensing applications since principally no electrical access is needed.
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  • 93
    Publikationsdatum: 2016-08-03
    Beschreibung: The two-color, double-pulse method is an efficient scheme to generate extreme ultraviolet light for fabricating the next generation semiconductor microchips. In this method, a Nd:YAG laser pulse is used to expand a several-tens-of-micrometers-scale tin droplet, and a CO 2 laser pulse is subsequently directed at the expanded tin vapor after an appropriate delay time. We propose the use of shadowgraphy with a CO 2 laser probe-pulse scheme to optimize the CO 2 main-drive laser. The distribution of absorption coefficients is derived from the experiment, and the results are converted to a practical absorption rate for the CO 2 main-drive laser.
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  • 94
    Publikationsdatum: 2016-08-04
    Beschreibung: We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.
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  • 95
    Publikationsdatum: 2016-08-04
    Beschreibung: We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO 2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ ST ∼ 2.3 meV, a strong spin-orbit interaction of Δ SO  ∼ 140  μ eV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.
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  • 96
    Publikationsdatum: 2016-08-05
    Beschreibung: In this work, we report a morphotropic phase boundary (MPB) involved ferromagnetic system Tb 1-x Nd x Co 2 and reveal the corresponding structural and magnetoelastic properties of this system. With high resolution synchrotron X-ray diffractometry, the crystal structure of the TbCo 2 -rich side is detected to be rhombohedral and that of NdCo 2 -rich side is tetragonal below their respective Curie temperatures T C . The MPB composition Tb 0.35 Nd 0.65 Co 2 corresponds to the coexistence of the rhombohedral phase ( R -phase) and tetragonal phase ( T -phase). Contrary to previously reported MPB involved ferromagnetic systems, the MPB composition of Tb 0.35 Nd 0.65 Co 2 shows minimum magnetization which can be understood as compensation of sublattice moments between the R -phase and the T -phase. Furthermore, magnetostriction of Tb 1-x Nd x Co 2 decreases with increasing Nd concentration until x = 0.8 and then increases in the negative direction with further increasing Nd concentration; the optimum point for magnetoelastic properties lies towards the rhombohedral phase. Our work not only shows an anomalous type of ferromagnetic MPB but also provides an effective way to design functional materials.
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  • 97
    Publikationsdatum: 2016-08-05
    Beschreibung: 0.07YO 1.5 -0.93HfO 2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In 2 O 3 (ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO x /SiO 2 /(001)Si substrates, and (111)ITO/(111)Pt/TiO x /SiO 2 /(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO x /SiO 2 /(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO x /SiO 2 /(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization ( P r ) of 9.6 and 10.8  μ C/cm 2 and coercive fields ( E c ) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.
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  • 98
    Publikationsdatum: 2016-08-05
    Beschreibung: In contrast to conventional dilute magnetic semiconductors with concentrations of magnetic ions of just a few percent, here, we report the fabrication of epitaxial Co x Zn 1− x O single crystalline films with Co concentrations from x  = 0.3 up to 0.45 by radio-frequency oxygen-plasma-assisted molecular beam epitaxy. The films retain their single crystalline wurtzite structure without any other crystallographic phase from precipitates, based on reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy, and Raman scattering. The results of X-ray diffraction, optical transmission spectroscopy, and in-situ X-ray photoelectron spectroscopy confirm the incorporation of Co 2+ cations into the wurtzite lattice. The films exhibit robust ferromagnetism and the magneto-optical Kerr effect at room temperature. The saturation magnetization reaches 265 emu/cm 3 at x  = 0.45, which corresponds to the average magnetic moment of 1.5 μ B per Co atom.
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  • 99
    Publikationsdatum: 2016-08-05
    Beschreibung: Focusing of X-rays to nanometre scale focal spots requires high precision X-ray optics. For nano-focusing mirrors, height errors in the mirror surface retard or advance the X-ray wavefront and after propagation to the focal plane, this distortion of the wavefront causes blurring of the focus resulting in a limit on the spatial resolution. We describe here the implementation of a method for correcting the wavefront that is applied before a focusing mirror using custom-designed refracting structures which locally cancel out the wavefront distortion from the mirror. We demonstrate in measurements on a synchrotron radiation beamline a reduction in the size of the focal spot of a characterized test mirror by a factor of greater than 10 times. This technique could be used to correct existing synchrotron beamline focusing and nanofocusing optics providing a highly stable wavefront with low distortion for obtaining smaller focus sizes. This method could also correct multilayer or focusing crystal optics allowing larger numerical apertures to be used in order to reduce the diffraction limited focal spot size.
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  • 100
    Publikationsdatum: 2016-08-05
    Beschreibung: We studied active voltage contrast (AVC) imaging using helium ion microscopy (HIM). We observed secondary electron (SE) images of the cross-sectional surface of multilayer ceramic capacitors (MLCCs) with and without a voltage applied to the internal electrodes. When no voltage was applied, we obtained an image reflecting the material contrast between the Ni internal electrode region and the BaTiO 3 dielectric region of the cross-sectional surface of the MLCC. When a voltage was applied, the electrical potential difference between the grounded and the positively biased internal electrodes affected the contrast (voltage contrast). Moreover, attenuation of the SE intensity from the grounded to the positively biased internal electrodes was observed in the dielectric region. Kelvin probe force microscopy (KPFM) measurements of the contact potential difference (CPD) were performed on the same sample. By using the AVC image from the HIM observation and the CPD image from the KPFM measurement, we could quantitatively evaluate the electrical potential. We think that the results of this study will lead to an expansion in the number of applications of HIM.
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