ALBERT

Description: In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

Description: Based on electromagnetic scattering theory, a model of superscatterer enhanced distant wireless power transfer (WPT) device has designed and analyzed with the concept of transformation optics. The numerical results obtained through a series expansion method reveal that a properly designed ss-WPT has high efficiency for long transfer distances as well as a wide transfer range. The transfer distance can be further enlarged by fine tuning of the design. These effects can be explained qualitatively through the study of magnetic flux.

Description: In this work, we report enhanced power conversion efficiency (PCE) of bulk heterojunction polymer solar cells by Förster resonance energy transfer (FRET) from samarium-doped luminescent gadolinium orthovanadate (GdVO 4 :Sm 3+ ) quantum dots (QDs) to polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) polymer. The photoluminescence emission spectrum of GdVO 4 :Sm 3+ QDs overlaps with the absorption spectrum of PTB7, leading to FRET from GdVO 4 :Sm 3+ to PTB7, and significant enhancements in the charge-carrier density of excited and polaronic states of PTB7 are observed. This was confirmed by means of femtosecond transient absorption spectroscopy. The FRET from GdVO 4 :Sm 3+ QDs to PTB7 led to a remarkable increase in the power conversion efficiency (PCE) of PTB7:GdVO 4 :Sm 3+ :PC 71 BM ([6,6]-phenyl-C 71 -butyric acid methyl ester) polymer solar cells. The PCE in optimized ternary blend PTB7:GdVO 4 :Sm 3+ :PC 71 BM (1:0.1:1.5) is increased to 8.8% from 7.2% in PTB7:PC 71 BM. This work demonstrates the potential of rare-earth based luminescent QDs in enhancing the PCE of polymer solar cells.

Description: We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO 2 /vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO 2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1  μ A/ μ m between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

Description: The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

Description: We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe 2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

Description: High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Description: Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 10 15  cm −2 and 1 × 10 17  cm −2 . Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60  μ m. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.

Description: In this letter, we investigate the origin of the spatial inhomogeneity of the photoluminescence (PL) intensity maps obtained on thin-film solar cells. Based on a hyperspectral imager setup, we record an absolute map of the quasi-Fermi level splitting Δμ by applying the generalized Planck's law. Then, using scanning confocal microscopy, we perform spatially and time-resolved photoluminescence measurements. This allowed us to quantify and map the micrometric fluctuations of the trapping defect density within these solar cells. Finally, we demonstrate the existence of a direct correlation between the spatial fluctuations of the quasi-Fermi level splitting and the trapping defect density. The latter was found to be correlated with the frequently reported spatially inhomogeneous PL maps of thin-film solar cells. Based on the observed correlation, we can quantify the local losses in quasi-Fermi level splitting induced by the spatial distribution of the trapping defects.

Description: Nonlinear ultrasonic Lamb waves are popular to characterize the nonlinearity of materials. However, the widely used nonlinear Lamb mode suffers from two associated complications: inherent dispersive and multimode natures. To overcome these, the symmetric Lamb mode (S0) at low frequency region is explored. At the low frequency region, the S0 mode is little dispersive and easy to generate. However, the secondary mode still exists, and increases linearly for significant distance. Numerical simulations and experiments are used to validate the nonlinear features and therefore demonstrate an easy alternative for nonlinear Lamb wave applications.

Description: Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc–Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc–Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

Description: The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm 2 /V s when the electrons passed through the n-GaN and the patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.

Description: By combining substrate-free structures with anodic bonding technology, we present a simple and efficient micro-electro-mechanical system (MEMS) thermal shear stress sensor. Significantly, the resulting depth of the vacuum cavity of the sensor is determined by the thickness of the silicon substrate at which Si is removed by the anisotropic wet etching process. Compared with the sensor based on a sacrificial layer technique, the proposed MEMS thermal shear-stress sensor exhibits dramatically improved sensitivity due to the much larger vacuum cavity depth. The fabricated MEMS thermal shear-stress sensor with a vacuum cavity depth as large as 525  μ m and a vacuum of 5 × 10 −2  Pa exhibits a sensitivity of 184.5 mV/Pa and a response time of 180  μ s. We also experimentally demonstrate that the sensor power is indeed proportional to the 1/3-power of the applied shear stress. The substrate-free structures offer the ability to precisely measure the shear stress fluctuations in low speed turbulent boundary layer wind tunnels.

Description: Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O N -H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O N can naturally account for the “super-recovery” in the peak transconductance.

Description: Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al 2 O 3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al 2 O 3 (0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al 2 O 3 ⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO 2 /Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al 2 O 3 (0001) substrates in multiple growth and transfer cycles.

Description: Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy distributions (IEDs) measured at an electrode depends sensitively on ion velocities upstream, at the presheath/sheath boundary. By measuring this amplitude, the velocities at which ions exit the presheath can be determined and long-standing controversies regarding presheath transport can be resolved. Here, IEDs measured in rf-biased, inductively coupled plasmas in CF 4 gas determined the presheath exit velocities of all significant positive ions: CF 3 + , CF 2 + , CF + , and F + . At higher bias voltages, we detected essentially the same velocity for all four ions. For all ions, measured velocities were significantly lower than the Bohm velocity and the electropositive ion sound speed. Neither is an accurate boundary condition for rf sheaths in electronegative gases: under certain low-frequency, high-voltage criteria defined here, either yields large errors in predicted IEDs. These results indicate that many widely used sheath models will need to be revised.

Description: Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

Description: We report a crucial step towards single-object cavity electrodynamics in the mid-infrared spectral range using resonators that borrow functionalities from antennas. Room-temperature strong light-matter coupling is demonstrated in the mid-infrared between an intersubband transition and an extremely reduced number of sub-wavelength resonators. By exploiting 3D plasmonic nano-antennas featuring an out-of-plane geometry, we observed strong light-matter coupling in a very low number of resonators: only 16, more than 100 times better than what reported to date in this spectral range. The modal volume addressed by each nano-antenna is sub-wavelength-sized and it encompasses only ≈4400 electrons.

Description: We have investigated the thickness-dependent transport properties of La 1/3 Sr 2/3 FeO 3 thin films grown on SrTiO 3 (001) and (111) substrates. At a thickness of ∼40 nm, both films show a clear transition in resistivity associated with the characteristic charge disproportionation at approximately 190 K. The transition temperature of the charge disproportionation is nearly unchanged with decreasing film thickness down to a certain thickness of ∼13 nm for both orientations, while the change in resistivity gradually decreases. Below this thickness, the transition becomes unclear, strongly suggesting the suppression of the charge disproportionation at the critical thickness of ∼13 nm. Furthermore, there is no significant difference in the thickness dependence of La 1/3 Sr 2/3 FeO 3 thin films between the (001) and (111) orientations. The negligible crystallographic-orientation dependence may reflect the isotropic nature for the domain of charge disproportionation states in La 1/3 Sr 2/3 FeO 3 .

Description: Titanium oxide (TiO x ) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO x thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Description: In this work, electron induced modifications on the bulk etch rate, structural and optical parameters of CR-39 polymer were studied using gravimetric, FTIR (Fourier Transform Infrared) and UV–vis (Ultraviolet–Visible) techniques, respectively. CR-39 samples were irradiated with 10 MeV electron beam for different durations to have the absorbed doses of 1, 10, 550, 5500, 16 500, and 55 000 kGy. From the FTIR analysis, the peak intensities at different bands were found to be changing with electron dose. A few peaks were observed to shift at high electron doses. From the UV-vis analysis, the optical band gaps for both direct and indirect transitions were found to be decreasing with the increase in electron dose whereas the opacity, number of carbon atoms in conjugation length, and the number of carbon atoms per cluster were found to be increasing. The bulk etch rate was observed to be increasing with the electron dose. The primary objective of this investigation was to study the response of CR-39 to high electron doses and to determine a suitable pre-irradiation condition. The results indicated that, the CR-39 pre-irradiated with electrons can have better sensitivity and thus can be potentially applied for neutron dosimetry.

Description: Low temperature thermal to electrical energy converters have the potential to provide a route for recovering waste energy. In this paper, we propose a new configuration of a thermal harvester that uses a naturally driven thermal oscillator free of mechanical motion and operates between a hot heat source and a cold heat sink. The system exploits a heat induced liquid-vapour transition of a working fluid as a primary driver for a pyroelectric generator. The two-phase instability of a fluid in a closed looped capillary channel of an oscillating heat pipe (OHP) creates pressure differences which lead to local high frequency temperature oscillations in the range of 0.1–5 K. Such temperature changes are suitable for pyroelectric thermal to electrical energy conversion, where the pyroelectric generator is attached to the adiabatic wall of the OHP, thereby absorbing thermal energy from the passing fluid. This new pyroelectric-oscillating heat pipe (POHP) assembly of a low temperature generator continuously operates across a spatial heat source temperature of 55 °C and a heat sink temperature of 25 °C, and enables waste heat recovery and thermal energy harvesting from small temperature gradients at low temperatures. Our electrical measurements with lead zirconate titanate (PZT) show an open circuit voltage of 0.4 V (AC) and with lead magnesium niobate–lead titanate (PMN-PT) an open circuit voltage of 0.8 V (AC) at a frequency of 0.45 Hz, with an energy density of 95 pJ cm −3 for PMN-PT. Our novel POHP device therefore has the capability to convert small quantities of thermal energy into more desirable electricity in the nW to mW range and provides an alternative to currently used batteries or centralised energy generation.

Description: Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta 2 O 5 -based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta 2 O 5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta 2 O 5 , thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

Description: Thus far, despite many investigations have been carried out for photo-triggered drug delivery systems, most of them suffer from an intrinsic drawback of without real-time monitoring mechanism. Incident intensity of light is a feasible parameter to monitor the drug release profiles. However, it is difficult to measure the incident laser power irradiated onto the photo-triggered carriers in drug delivery systems during in vivo therapy. We design an online measurement method based on the fluorescence intensity ratio (FIR) technique through upconversion nanoparticles. FIR value varies with temperature of sample due to the thermal effect induced by the incident laser, which validates the laser power measurement. Effects of rare earth doping concentration, as well as experimental conditions including laser spots and wavelengths on the measurement behavior were also investigated.

Description: Several candidate phenomenological expressions are studied for self-rippling energy that drives ripple formation of free single-layer graphene sheets. One phenomenological expression is admitted, while all others are rejected because they cannot admit stable periodic ripple mode. The admitted phenomenological expression contains two terms: one quadratic term which acts like a compressive force and has a destabilizing effect, and another fourth-order term which acts like a nonlinear elastic foundation and has a stabilizing effect. The two associated coefficients depend on specific mechanism of self-rippling and can be determined based on observed wavelength and amplitude of ripple mode. Based on the admitted expression, the effect of an applied force on ripple formation is studied. The present model predicts that the rippling can be controlled or even suppressed with an applied tensile force or collapsed into narrow wrinkles (of deformed wavelengths down to around 2 nm) under an applied compressive force, and the estimated minimum tensile strain to suppress rippling is in remarkable agreement with some known data. Our results show that self-rippling energy dominates ripple formation of sufficiently long free graphene ribbons, although it cannot drive self-rippling of sufficiently short free graphene ribbons. Consequently, a critical length is estimated so that self-rippling occurs only when the length of free single-layer graphene ribbons is much longer than the critical length. The estimated critical length is reasonably consistent with the known fact that self-rippling cannot occur in shorter free graphene sheets (say, of length below 20 nm).

Description: A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

Description: Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge 3 H 8 and SnD 4 hydrides, to fabricate Ge 1- y Sn y photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n -Ge/ i -Ge 1- y Sn y / p -Ge 1- z Sn z type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n -Ge 1- x Sn x / i -Ge 1- y Sn y / p -Ge 1- z Sn z architectures incorporating Ge 1- x Sn x intermediate layers ( x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge 1- x - y Si x Sn y alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.

Description: Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge double heterostructures (DHS) that were grown directly on a Si substrate via a chemical vapor deposition system. Both photoluminescence and electroluminescence spectra have been characterized at temperatures from 300 to 77 K. Based on our theoretical calculation, all GeSn alloys in this study are indirect bandgap materials. However, due to the small energy separation between direct and indirect bandgap, and the fact that radiative recombination rate greater than non-radiative, the emissions are mainly from the direct Γ-valley to valence band transitions. The electroluminescence emissions under current injection levels from 102 to 357 A/cm 2 were investigated at 300 K. The monotonic increase of the integrated electroluminescence intensity was observed for each sample. Moreover, the electronic band structures of the DHS were discussed. Despite the indirect GeSn bandgap owing to the compressive strain, type-I band alignment was achieved with the barrier heights ranging from 11 to 47 meV.

Description: Due to their high strength and advantageous high-temperature properties, tungsten-based alloys are being considered as plasma-facing candidate materials in fusion devices. Under neutron irradiation, rhenium, which is produced by nuclear transmutation, has been found to precipitate in elongated precipitates forming thermodynamic intermetallic phases at concentrations well below the solubility limit. Recent measurements have shown that Re precipitation can lead to substantial hardening, which may have a detrimental effect on the fracture toughness of W alloys. This puzzle of sub-solubility precipitation points to the role played by irradiation induced defects, specifically mixed solute-W interstitials. Here, using first-principles calculations based on density functional theory, we study the energetics of mixed interstitial defects in W-Re, W-V, and W-Ti alloys, as well as the heat of mixing for each substitutional solute. We find that mixed interstitials in all systems are strongly attracted to each other with binding energies of −2.4 to − 3.2   eV and form interstitial pairs that are aligned along parallel first-neighbor 〈 111 〉 strings. Low barriers for defect translation and rotation enable defect agglomeration and alignment even at moderate temperatures. We propose that these elongated agglomerates of mixed-interstitials may act as precursors for the formation of needle-shaped intermetallic precipitates. This interstitial-based mechanism is not limited to radiation induced segregation and precipitation in W–Re alloys but is also applicable to other body-centered cubic alloys.

Description: This paper reports a piezoelectric aluminum nitride (AlN) based micro-machined infrasonic hydrophone. We have conducted a systematic design study for the hydrophone sensor to meet the stringent requirements of underwater applications. The hydrophone sensor was fabricated on a cavity silicon-on-insulator (SOI) substrate using an in-house CMOS-compatible AlN-on-SOI process platform. A 5 × 5 arrayed hydrophone sensor was characterized thoroughly using an industry-standard hydrophone calibration instrument. The results show that the hydrophone achieved a sound sensitivity of −182.5 dB ± 0.3 dB (ref. to 1 V rms/ μ Pa) and an eligible acceleration sensitivity of only −196.5 dB (ref. to 1 V rms/ μ g), respectively, a non-linearity of 0.11%, a noise resolution of 57.5 dB referenced to 1  μ Pa/√Hz within an ultra-low operation bandwidth of 10 Hz∼100 Hz, the highest noise resolution of micro-machined hydrophones reported to date, and better than traditional bulky hydrophones in terms of the same application. The size of the 5 × 5 arrayed hydrophone sensor is about 2 mm × 2 mm.

Description: The development of miniaturized robotic swimmers is hindered by technical limitations in micro- and nanofabrication. To circumvent these limitations, we investigated the minimal geometrical requirements for swimming in low Reynolds number. Micro- and nanofabrication of complex shapes, such as helices, on a massive scale requires sophisticated state of the art technologies and has size limitations. In contrast, simple shaped structures, such as spherical particles, can be fabricated massively using chemical synthesis with relative ease. Here, simple microswimmers were fabricated using two microparticles with debris attached to their surface. The debris on the microswimmer's surface creates a geometry with two or more planes of symmetry, allowing the microswimmer to swim in bulk fluid at low Reynolds number. The microswimmers are magnetically actuated and controlled via a uniform rotating magnetic field generated by an approximate Helmholtz electromagnetic coil system. We characterized the microswimmer's velocity profile with respect to rotating frequency and analyzed the motion of the microswimmer using image processing. Finally, we demonstrated the controllability of the microswimmers by freely steering them in any desired directions.

Description: This paper presents the first design and experimental demonstration of an ultrahigh frequency complete phononic crystal (PnC) bandgap aluminum nitride (AlN)/air structure operating in the GHz range. A complete phononic bandgap of this design is used to efficiently and simultaneously confine elastic vibrations in a resonator. The PnC structure is fabricated by etching a square array of air holes in an AlN slab. The fabricated PnC resonator resonates at 1.117 GHz, which corresponds to an out-of-plane mode. The measured bandgap and resonance frequencies are in very good agreement with the eigen-frequency and frequency-domain finite element analyses. As a result, a quality factor/volume of 7.6 × 10 17 /m 3 for the confined resonance mode was obtained that is the largest value reported for this type of PnC resonator to date. These results are an important step forward in achieving possible applications of PnCs for RF communication and signal processing with smaller dimensions.

Description: In this work, titanium dioxide nanotubes were prepared by using titanium foils via electrochemical anodization in ethylene glycol solutions containing different amounts of water and fluoride in the ranges of 1%–3% and 0.15%–0.5%, respectively, to determine their effects on morphology, optical, and crystalline structure properties. Annealing processes were performed on all samples in the range between 273 and 723 K. Morphology and structure properties of the samples were studied by scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy. Titanium dioxide (TiO 2 ) nanotubes, through anodization method, are strongly influenced by conditions, like fluoride concentration and applied voltages. Tube lengths between 2 and 7  μ m were obtained, exhibiting different diameters and wall thicknesses. When alternating voltage was applied, the outer surface of the nanotubes exhibited evenly spaced ring-shaped regions, while smooth tubes were observed when constant voltage was applied. Reflection peaks, corresponding to Brookite, Anatase, and Rutile, of TiO 2 phases, were observed from the XRD pattern. These phases were corroborated via μXRD measurements, and the Ti 3 O 5 phase was also observed in detail. Absorption coefficient (α), optical band gap (Eg), and extinction coefficient (ε) of TiO 2 nanotubes were calculated by transmittance spectra in the UV–Vis range. Strong absorption was noted in the UV region from reflectance and absorbance measurements. A correlation between synthesis parameters and physical properties is presented.

Description: We describe the principles of design, fabrication, and operation of a piezoelectric optomechanical crystal with which we demonstrate bi-directional conversion of energy between microwave and optical frequencies. The optomechanical crystal has an optical mode at 1523 nm co-located with a mechanical breathing mode at 3.8 GHz, with a measured optomechanical coupling strength g om /2π of 115 kHz. The breathing mode is driven and detected by curved interdigitated transducers that couple to a Lamb mode in suspended membranes on either end of the optomechanical crystal, allowing the external piezoelectric modulation of the optical signal as well as the converse, the detection of microwave electrical signals generated by a modulated optical signal. We compare measurements to theory where appropriate.

Description: A large laser modulated resistance effect was observed in a Cu 2 O heterojunction of Cu 2 O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu 2 O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu 2 O and Si sides. The strong linear resistance change ratio of Cu 2 O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices.

Description: Similar to electromagnetism, described by the Maxwell equations, the physics of magnetoelectric (ME) phenomena deals with the fundamental problem of the relationship between electric and magnetic fields. Despite a formal resemblance between the two notions, they concern effects of different natures. In general, ME-coupling effects manifest in numerous macroscopic phenomena in solids with space and time symmetry breakings. Recently, it was shown that the near fields in the proximity of a small ferrite particle with magnetic-dipolar-mode (MDM) oscillations have the space and time symmetry breakings and the topological properties of these fields are different from the topological properties of the free-space electromagnetic fields. Such MDM-originated fields—called magnetoelectric (ME) fields—carry both spin and orbital angular momenta. They are characterized by power-flow vortices and non-zero helicity. In this paper, we report on observation of the topological ME effects in far-field microwave radiation based on a small microwave antenna with a MDM ferrite resonator. We show that the microwave far-field radiation can be manifested with a torsion structure where an angle between the electric and magnetic field vectors varies. We discuss the question on observation of the regions of localized ME energy in far-field microwave radiation.

Description: The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO 3 and the wide band gap semiconductor TiO 2 , and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO 3 , according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO 3 , the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO 3 exhibits a Schottky barrier alignment with TiO 2 and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO 3 recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

Description: The aim of this work is to analyze in more depth a model of particle deposition by characterizing different parameters such as profile density, bonds and perimeter, and substrate coverage, all being involved in the description of deposits as bulk. Thus, this study is an extension of a previous work on non-equilibrium interface-growth systems where two different interface-growth models, called Standard Adherence Rule Model and Potential Adherence Rule Model, were characterized. In this work, bulk characterization is implemented for the complete range of Peclet numbers. The zones of density profile (Near-Wall, Plateau, and Active-Growth) are studied by proposing an adjustment for each of them and determining the full-setting density profile depending on the Peclet number. The density profiles are compared with other one- and two-stage models. Furthermore, an algorithm is proposed to calculate the number of bonds of the particles and the perimeter that a substrate forms over time. Finally, to analyze the coating, its temporal behavior is adjusted to an exponential function by comparing the results with those found for Random Sequential Adsorption models which describe systems like colloidal particles on solid substrates, adsorption of proteins at mineral surfaces, or oxidation of one-dimensional polymer chains.

Description: The recently discovered hexagonal ABC -type hyperferroelectrics, in which the polarization persists in the presence of the depolarization filed, exhibit a variety of intriguing and potentially useful properties [Garrity et al ., Phys. Rev. Lett. 112 , 127601 (2014)]. For the existing prototype of LiBeSb, we present detailed first-principles calculations concerning the lattice dynamics, electronic structure, and optical properties. An unstable longitudinal optic mode in the high-symmetry structure and a large polarization of 0.5 C/m 2 in the polar phase are reported, including the remarkable dependence of Born effective charges on structural distortion. Using the HSE06 hybrid functional, we predict that LiBeSb has a small band-gap of 1.5 eV and shows dominant asymmetric covalent bonding character. Importantly, we find that there are remarkable absorptions in the whole visible spectrum. These features, combined with the enhanced carrier mobility, make LiBeSb as well as the whole family of hexagonal ABC -type hyperferroelectrics as promising candidates for ferroelectric photovoltaic materials with large bulk photovoltaic effect in the visible spectrum.

Description: We combine classical nucleation theory with superharmonic focusing to predict necessary pressures to induce nucleation in acoustic droplet vaporization. We show that linear acoustics is a valid approximation to leading order when particle displacements in the sound field are small relative to the radius of the droplet. This is done by perturbation analysis of an axisymmetric compressible inviscid flow about a droplet with small surface perturbations relative to the mean radius subjected to an incoming ultrasonic wave. The necessary nucleation pressure threshold inside the droplet is calculated to be −9.33 ± 0.30 MPa for typical experimental parameters by employing results from classical homogeneous nucleation theory . As a result, we are able to predict if a given incident pressure waveform will induce nucleation.

Description: Resonant dipolar relaxation in poly( ε -caprolactone) (PCL) is reported using thermally stimulated discharge current spectroscopy. PCL is a bio-medically known shape memory polymer having a well defined γ , β , α , and α ′ relaxations, respectively, centered around 125 K, 170 K, 220 K, and 270 K as seen by the measurements. By employing a new protocol variable poling temperature at constant freezing temperature, resonant dipolar relaxation in PCL could be induced, especially in the vicinity of α relaxation. Such a protocol is useful in de-convoluting the features in a more meaningful fashion. By an analysis of activation process, we could show a clear contrast enhancement of the dynamics of the participating dipoles by means of a minimum in the activation energies situated around the glass transition region. The relevant parameters of interest such as activation energies and relaxation times are estimated and discussed.

Description: We report the growth of thin films of the mixed valence compound YbAl 3 on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f 13 and f 12 final states establishing that YbAl 3 is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

Description: An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the ferromagnetic resonance (FMR) spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (

Description: An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85 Ga 0.15 N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on /I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

Description: We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y 3 Fe 5 O 12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

Description: We have investigated the detailed magnetic, magnetoelectric (ME), magnetodielectric (MD) and thermal expansion properties in Co 4 Nb 2 O 9 crystal. A magnetic-field-induced spin flop was observed below antiferromagnetic (AFM) transition temperature T N . Dielectric constant at applied magnetic field nearly diverges around the AFM transition, giving rise to a colossal MD effect as high as ∼138% around T N . Theoretical analysis of the ME and MD data revealed a major contribution of critical spin fluctuation to the colossal MD effect in Co 4 Nb 2 O 9 . These results suggest that linear ME materials with large ME coupling might be potentially used to realize large MD effect for future application.

Description: GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10 8  cm −2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10 6  cm −2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Description: The energy landscape of Zr at high hydrostatic pressure suggests that its transformation behavior is strongly pressure dependent. This is in contrast to the known transition mechanism in Ti, which is essentially independent of hydrostatic pressure. Generalized solid-state nudged elastic band calculations at constant pressure shows that α-Zr transforms like Ti only at the lowest pressure inside the stability field of ω-phase. Different pathways apply at higher pressures where the energy landscape contains several high barriers so that metastable states are expected, including the appearance of a transient bcc phase at ca. 23 GPa. The global driving force for the hcp-ω transition increases strongly with increasing pressure and reaches 23.7 meV/atom at 23 GPa. Much of this energy relates to the excess volume of the hcp phase compared with its ω phase.

Description: We investigated the structure and magneto-transport properties of magnetic junctions using a Co 2 Fe(Ga 0.5 Ge 0.5 ) Heusler alloy as ferromagnetic electrodes and a Cu(In 0.8 Ga 0.2 )Se 2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product ( RA ) values between 0.3 and 3 Ω  μ m 2 . Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

Description: In this study, we present the experimental observation that polycrystalline Mn 2+x Fe 1−x Ga (x = −0.2, 0, 0.2, 0.4) compounds can be synthesized to be D0 19 -type (Ni 3 Sn-type) hexagonal structure with space group P63/mmc. A giant exchange bias field up to 1.32 kOe was achieved in hexagonal Mn 2 FeGa alloy at 5 K. A cluster glass state is confirmed by ac susceptibility measurement under different driving frequencies. Interestingly, robust horizontal and vertical shifts in magnetic hysteresis loop were simultaneously observed at 5 K under high cooling field up to 90 kOe. The large exchange bias is originated from the large exchange anisotropy between cluster glass phase and ferrimagnetic matrix. The vertical shift is thought to be attributed to the incomplete reversal of frozen cluster spins.

Description: Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V oc with increasing fluence; however, the 80 nm cell showed no degradation in I sc for fluences up to 10 14  p + cm −2 . For the same exposure, the I sc of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Description: Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

Description: Molecular dynamic simulations of Y 2 O 3 in bcc Fe and transmission electron microscopy (TEM) observations were used to understand the structure of Y 2 O 3 nano-clusters in an oxide dispersion strengthened steel matrix. The study showed that Y 2 O 3 nano-clusters below 2 nm were completely disordered. Y 2 O 3 nano-clusters above 2 nm, however, form a core-shell structure, with a shell thickness of 0.5–0.7 nm that is independent of nano-cluster size. Y 2 O 3 nano-clusters were surrounded by off-lattice Fe atoms, further increasing the stability of these nano-clusters. TEM was used to corroborate our simulation results and showed a crossover from a disordered nano-cluster to a core-shell structure.

Description: In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.

Description: Sensitive visualization and conformational control of long, delicate biopolymers present critical challenges to emerging biotechnologies and biophysical studies. Next-generation nanofluidic manipulation platforms strive to maintain the structural integrity of genomic DNA prior to analysis but can face challenges in device clogging, molecular breakage, and single-label detection. We address these challenges by integrating the Convex Lens-induced Confinement (CLiC) technique with a suite of nanotopographies embedded within thin-glass nanofluidic chambers. We gently load DNA polymers into open-face nanogrooves in linear, concentric circular, and ring array formats and perform imaging with single-fluorophore sensitivity. We use ring-shaped nanogrooves to access and visualize confinement-enhanced self-ligation of long DNA polymers. We use concentric circular nanogrooves to enable hour-long observations of polymers at constant confinement in a geometry which eliminates the confinement gradient which causes drift and can alter molecular conformations and interactions. Taken together, this work opens doors to myriad biophysical studies and biotechnologies which operate on the nanoscale.

Description: A general, substrate-independent method for plasma deposition of nanostructured, crystalline metal oxides is presented. The technique uses a flow-through, micro-hollow cathode plasma discharge (supersonic microplasma jet) with a “remote” ring anode to deliver a highly directed flux of growth species to the substrate. A diverse range of nanostructured materials (e.g., CuO, α-Fe 2 O 3 , and NiO) can be deposited on any room temperature surface, e.g., conductors, insulators, plastics, fibers, and patterned surfaces, in a conformal fashion. The effects of deposition conditions, substrate type, and patterning on film morphology, nanostructure, and surface coverage are highlighted. The synthesis approach presented herein provides a general and tunable method to deposit a variety of functional and hierarchical metal oxide materials on many different surfaces. High surface area, conversion-type CuO electrodes for Li-ion batteries are demonstrated as a proof-of-concept example.

Description: We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

Description: Recent defect calculations suggest that the open circuit voltage of CuGaSe 2 solar cells can be limited by deep intrinsic electron traps by Ga Cu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe 2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

Description: We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3  μ s for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Description: We design and implement 3D-lumped element microwave cavities that spatially focus magnetic fields to a small mode volume. They allow coherent and uniform coupling to electron spins hosted by nitrogen vacancy centers in diamond. We achieve large homogeneous single spin coupling rates, with an enhancement of more than one order of magnitude compared to standard 3D cavities with a fundamental resonance at 3 GHz. Finite element simulations confirm that the magnetic field distribution is homogeneous throughout the entire sample volume, with a root mean square deviation of 1.54%. With a sample containing 10 17 nitrogen vacancy electron spins, we achieve a collective coupling strength of Ω = 12 MHz, a cooperativity factor C = 27, and clearly enter the strong coupling regime. This allows to interface a macroscopic spin ensemble with microwave circuits, and the homogeneous Rabi frequency paves the way to manipulate the full ensemble population in a coherent way.

Description: For macroscopically manipulating heat flow at will, thermal metamaterials have opened a practical way, which possesses a single function, such as either cloaking or concentrating the flow of heat even though environmental temperature varies. By developing a theory of transformation heat transfer for multiple functions, here we introduce the concept of intelligent thermal metamaterials with a dual function, which is in contrast to the existing thermal metamaterials with single functions. By assembling homogeneous isotropic materials and shape-memory alloys, we experimentally fabricate a kind of intelligent thermal metamaterials, which can automatically change from a cloak (or concentrator) to a concentrator (or cloak) when the environmental temperature changes. This work paves an efficient way for a controllable gradient of heat, and also provides guidance both for arbitrarily manipulating the flow of heat and for efficiently designing similar intelligent metamaterials in other fields.

Description: We have directly probed the dynamic behavior of a single ferromagnetic disk as a function of neighboring disk interactions and lattice configurations using micro-focused Brillouin light scattering spectroscopy. At high field, when the disks are in the single domain state, the dynamic behavior of the disk under probe is strongly influenced by the neighboring disk configurations due to magnetostatic interactions. In particular, the changing landscape of dipolar field from neighboring disks as a function of lattice configurations plays a key role in modifying the resultant internal field of the disk under probe. When the disks are in the vortex state at remanence, the effects of dipolar fields on the disk under probe vanish resulting in a negligible configurational anisotropy. Micromagnetic simulations and stray field models are in good agreement with the experimental results.

Description: Combining experiment and theory, we investigate how a naturally created heterojunction ( pn junction) at a graphene and metallic contact interface is modulated via interaction with molecular hydrogen (H 2 ). Due to an electrostatic interaction, metallic electrodes induce pn junctions in graphene, leading to an asymmetrical resistance in electronic transport for electrons and holes. We report that the asymmetry in the resistance can be tuned in a reversible manner by exposing graphene devices to H 2 . The interaction between the H 2 and graphene occurs solely at the graphene-contact pn junction and induces a modification on the electrostatic interaction between graphene and metallic contacts. We explain the experimental data with theory providing information concerning the length of the heterojunction and how it changes as a function of H 2 adsorption. Our results are valuable for understanding the nature of the metal-graphene interfaces and have potential application for selective sensors of molecular hydrogen.

Description: We present a design of multilayer core-shell nanostructures formed by introducing a dielectric gap shell layer between a silver core and a monolayer graphene shell for spectrally selective absorption enhancement in graphene based on an unconventional Fano effect. We demonstrate that this mechanism enables great flexibility in the choice of parameters of the proposed structures for the achievement of a relatively large and narrow-band absorption enhancement in graphene. Furthermore, we also demonstrate that such a spectrally selective absorption enhancement in graphene is highly tunable and can be optimized by controlling either the core or the shell parameters. These unique absorption properties may have applications in color-selective photodetectors and image sensors.

Description: In this study, we present the influence of the embedding matrix on the relaxation of Fe(phen) 2 (NCS) 2 (phen = 1,10-phenanthroline) spin-transition microparticles as revealed by experiments and provide an explanation within the framework of an elastic model based on a Monte-Carlo method. Experiments show that the shape of the high-spin → low-spin relaxation curves is drastically changed when the particles are dispersed in glycerol. This effect was considered in the model by means of interactions between the microparticles and the matrix. A faster start of the relaxation for microparticles embedded in glycerol is due to an initial positive local pressure acting on the edge spin-crossover molecules from the matrix side. This local pressure diminishes and eventually becomes negative during relaxation, as an effect of the decrease of the volume of spin-crossover microparticles from high-spin to low-spin.

Description: We present a method of forming shallow p- doping on a 4H-SiC surface by depositing a thin Al layer ( d  = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 10 17  cm −3 up to a depth of d ≤ 250 nm. I–V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n- type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51   eV and Δ ϕ B = 0.26   eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation ( activation ratio ∼ 2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.

Description: We report on the detection of structural inhomogeneity across anode and cathode interfaces in electrically degraded reduced and oxidized Fe -doped SrTiO 3 (Fe:STO) single crystals by optical second harmonic generation (SHG) spectroscopy. SHG spectra were collected from several regions across the anode and cathode interfaces in both degraded reduced and oxidized Fe:STO crystals. We identify the formation of defect concentration gradients along both degraded reduced and oxidized anode interfaces. While the broken symmetries decrease from the outer region towards the central region of the reduced anode, the opposite trend is seen in the degraded oxidized anode. These results are attributed to the formation of centrosymmetric Fe 4+ :Ti 4+ -O 6 octahedral structures in the central region of the reduced sample's degraded anode and non-centrosymmetric Jahn-Teller distortions in the central region of the oxidized sample's degraded anode. The observed changes in SHG intensity from the outer region towards the central region of the degraded cathode interfaces is accompanied by a structural phase transition in the inner and outer regions, marked by strong changes to the s- polarized intensity spectra. We explain the SHG intensity changes by the formation of lower order symmetry Fe 3+ :Ti 3+ -O 6 structures in the outer region and a modification of the second-order nonlinear susceptibility near the central regions due to the clustering of dissociated oxygen vacancies. These significant structural and spatial inhomogeneities are linked directly to the field-driven migration of oxygen ions and vacancies.

Description: In this study, fullerene like carbon (FL-C) is introduced in hydrogenated amorphous carbon (a-C:H) film by employing a direct current plasma enhanced chemical vapor deposition. The film has a low friction and wear, such as 0.011 and 2.3 × 10 −9 mm 3 /N m in the N 2 , and 0.014 and 8.4 × 10 −8 mm 3 /N m in the humid air, and high hardness and elasticity (25.8 GPa and 83.1%), to make further engineering applications in practice. It has several nanometers ordered domains consisting of less frequently cross-linked graphitic sheet stacks. We provide new evidences for understanding the reported Raman fit model involving four vibrational frequencies from five, six, and seven C-atom rings of FL-C structures, and discuss the structure evolution before or after friction according to the change in the 1200 cm −1 Raman band intensity caused by five- and seven-carbon rings. Friction inevitably facilitates the transformation of carbon into FL-C nanostructures, namely, the ultra low friction comes from both such structures within the carbon film and the sliding induced at friction interface.

Description: It was shown that drilling of multi-layered target placed in the air by tightly focused femtosecond laser radiation with high fluence (up to 1000 J/cm 2 ) can be monitored online using plasma-induced X-ray emission and second harmonic of incident laser radiation. The technique based on X-rays registration is appeared to be more flexible than the method based on detection of second harmonic since its accuracy depends crucially on the target type. We demonstrated that the X-ray signal clearly indicates the transition from one layer to another during the microdrilling of targets consisting of 2–4 layers of titanium foil when a laser beam is focused beneath the target surface at a depth comparable to the layer thickness. The diagnostics of microchannel production in the chicken eggshell was performed for the first time. It was found that the presence of albumen beneath the shell accounts for longtime generation of X-ray pulses.

Description: This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10 16  cm −2 , close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

Description: The formation and evolution of spin wave band gaps in the transmission spectrum of a magnonic crystal have been studied. A time and space resolved magneto inductive probing system has been used to map the spin wave propagation and evolution in a geometrically structured yttrium iron garnet film. Experiments have been carried out using (1) a chemically etched magnonic crystal supporting the propagation of magnetostatic surface spin waves, (2) a short microwave pulsed excitation of the spin waves, and (3) direct spin wave detection using a movable magneto inductive probe connected to a synchronized fast oscilloscope. The results show that the periodic structure not only modifies the spectra of the transmitted spin waves but also influences the distribution of the spin wave energy inside the magnonic crystal as a function of the position and the transmitted frequency. These results comprise an experimental confirmation of Bloch′s theorem in a spin wave system and demonstrate good agreement with theoretical observations in analogue phononic and photonic systems. Theoretical prediction of the structured transmission spectra is achieved using a simple model based on microwave transmission lines theory. Here, a spin wave system illustrates in detail the evolution of a much more general physical concept: the band gap.

Description: The 8-band k · p parameters which include the direct band coupling between the conduction and the valence bands are derived and used to model optical intersubband transitions in Ge quantum well heterostructure material grown on Si substrates. Whilst for Si rich quantum wells the coupling between the conduction bands and valence bands is not important for accurate modelling, the present work demonstrates that the inclusion of such coupling is essential to accurately determine intersubband transitions between hole states in Ge and Ge-rich Si 1− x Ge x quantum wells. This is due to the direct bandgap being far smaller in energy in Ge compared to Si. Compositional bowing parameters for a range of the key modelling input parameters required for Ge/SiGe heterostructures, including the Kane matrix elements, the effective mass of the Γ 2 ′ conduction band, and the Dresselhaus parameters for both 6- and 8-band k · p modelling, have been determined. These have been used to understand valence band intersubband transitions in a range of Ge quantum well intersubband photodetector devices in the mid-infrared wavelength range.

Description: Rare-earth orthoniobates constitute a class of materials that has been exploited due to their interesting physical properties depending on the lanthanide element. Besides paramagnetism, ferroelasticity, and negative compressibility, these materials are known by their interesting optical properties and mixed types of conduction processes (protonic, ionic, and electronic). In this work, two types of SmNbO 4 samples were studied: polycrystalline samples, prepared by a sol-gel route using the Pechini method, and single crystalline fibres grown by the Laser Floating Zone technique. These samples were structurally characterized based on powder and single-crystal X-ray diffraction studies. A metastable tetragonal phase, stabilized by grain size, was identified in the synthesized powders. After a sintering process of such powders, a single monoclinic phase was obtained. Complementarily, scanning electron microscopy and Raman spectroscopy analyses were performed to these samples. Photoluminescence and photoluminescence excitation spectroscopic studies allowed identifying more than one optically active centre of the trivalent samarium ion in the analysed material. Impedance spectroscopy measurements have shown a large variation of the ac conductivity as a function of temperature, assigned to a protonic conduction and to native ionic conduction mechanisms.

Description: A series of polycrystalline YMn 1−x Ru x O 3 (0 ≤ x ≤ 0.2) samples were prepared by traditional solid-state reaction method. Effects of doping on the microstructures and magnetic properties were investigated. Microstructural results reveal that samples crystallize in a single hexagonal structure with P 6 3 cm group for x ≤ 0.1. Lattice parameters a, c, and unit-cell volume of YMn 1−x Ru x O 3 are found to increase with doping content, which are ascribed to the larger radius of Ru 3+ than that of Mn 3+ . Weak ferromagnetism is found and is enhanced with increasing doping concentration x. The bond angles of Mn-O3-Mn and Mn-O4-Mn are changed in the opposite trends, which break the Mn-Mn exchange interaction, thus the antiferromagnetic ordering. The MnO 5 bipyramid is found to be relieved and the trimerization of Mn ions is weakened. These structural modifications result in the increase of weak ferromagnetism ordering in samples.

Description: To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO 2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813  μ W m −1  K −2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO 2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

Description: We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ 8C conduction band edge.

Description: Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κ xy changes sign as a function of magnetic field or temperature on the kagome lattice, and κ xy changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κ xy has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T 2 law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.

Description: Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density ( J sc ). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage ( V oc ). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

Description: We demonstrate a high-efficiency tunable acoustic absorber for low frequencies (

Description: Micron-sized metal-coated polymer spheres are frequently used as filler particles in conductive composites for electronic interconnects. However, the intrinsic electrical resistivity of the spherical thin films has not been attainable due to deficiency in methods that eliminate the effect of contact resistance. In this work, a four-point probing method using vacuum compatible piezo-actuated micro robots was developed to directly investigate the electric properties of individual silver-coated spheres under real-time observation in a scanning electron microscope. Poly(methyl methacrylate) spheres with a diameter of 30  μ m and four different film thicknesses (270 nm, 150 nm, 100 nm, and 60 nm) were investigated. By multiplying the experimental results with geometrical correction factors obtained using finite element models, the resistivities of the thin films were estimated for the four thicknesses. These were higher than the resistivity of bulk silver.

Description: The synthesis of a 50 unit cell thick n = 4 Sr n+1 Ti n O 3n+1 (Sr 5 Ti 4 O 13 ) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO 2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO 2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of 〉4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO 3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Description: We implement a quantum random number generator based on a balanced homodyne measurement of vacuum fluctuations of the electromagnetic field. The digitized signal is directly processed with a fast randomness extraction scheme based on a linear feedback shift register. The random bit stream is continuously read in a computer at a rate of about 480 Mbit/s and passes an extended test suite for random numbers.

Description: Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high- Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.

Description: We perform molecular dynamics simulations to investigate the static and dynamic fragmentation of metallic liquid sheets of tin induced by random surface fluctuations. The static regime is analyzed by simulating sheets of different thicknesses, and the dynamic fragmentation is ensured by applying along the longitudinal direction of a sheet an instantaneous expansion velocity per initial unit length (expansion rate) with values ranging from 1 × 10 9 to 3 × 10 10  s −1 . The simulations show that the static/dynamic fragmentation becomes possible when the fluctuations of the upper and lower surfaces of the sheets can either overlap or make the local volume density of the system go down below a critical value. These two mechanisms cause locally in the sheet the random nucleation of pores of void, on a timescale that exponentially increases with the sheet thickness. Afterwards, the pores develop following distinct stages of growth, coalescence, and percolation, and later in time aggregates of liquid metal are formed. The simulations also show that the fragmentation of static sheets is characterized by relatively mono-dispersed surface and volume distributions of the pores and aggregates, respectively, whereas in extreme conditions of dynamic fragmentation (expansion rate typically in the range of 1 × 10 10  s −1 ), the distributions are rather poly-dispersed and obey a power law decay with surface (volume). A model derived from the simulations suggests that both dynamic and static regimes of fragmentation are similar for expansion rates below typically 1 × 10 7  s −1 .

Description: Metallic hierarchical texture was prepared by nickel-cobalt electro-deposition and subsequent replacement reaction to coat silver. Due to energetically favorable hydrocarbon adsorption on the silver film, contact angle of the surface increased gradually over time after exposure to laboratory air. The substrate became superhydrophobic after three days to aqueous droplets with various pH values. It was found that the surface remained stable after exposing to extreme temperatures in the wide range from −196 °C to 200 °C. Importantly, self-healing of superhydrophobicity can be easily accomplished and repeated in an ambient environment while hydrocarbon desorption occurred under high temperature. Furthermore, this approach can be easily applied to other conductive substrates.

Description: We demonstrate that acoustic levitation can levitate spherical objects much larger than the acoustic wavelength in air. The acoustic levitation of an expanded polystyrene sphere of 50 mm in diameter, corresponding to 3.6 times the wavelength, is achieved by using three 25 kHz ultrasonic transducers arranged in a tripod fashion. In this configuration, a standing wave is created between the transducers and the sphere. The axial acoustic radiation force generated by each transducer on the sphere was modeled numerically as a function of the distance between the sphere and the transducer. The theoretical acoustic radiation force was verified experimentally in a setup consisting of an electronic scale and an ultrasonic transducer mounted on a motorized linear stage. The comparison between the numerical and experimental acoustic radiation forces presents a good agreement.

Description: The standard “Kittel Law” for the thickness and shape of ferroelectric, ferroelastic, or ferromagnet domains assumes mechanical equilibrium. The present paper shows that such domains may be highly nonequilibrium, with unusual thicknesses and shapes. In lead germanate and multiferroic lead zirconate titanate iron tantalate domain wall instabilities resemble hydrodynamics (Richtmyer–Meshkov and Helfrich–Hurault, respectively).

Description: The spin orbit torques (SOTs) in perpendicularly magnetized Co-Ni multilayers sandwiched between two heavy metals (HM) have been studied. By exploring various HM materials, we show an efficient enhancement or cancellation of the total SOT, depending on the combination of the two HM materials. The maximum SOT effective field is obtained in Pt/Co-Ni/W heterostructures. We also model our double HM system and show that the effective spin Hall angle has a peak value at certain HM thicknesses. Measuring the SOT in Pt/Co-Ni/W for various W thicknesses confirms an effective spin Hall angle up to 0.45 in our double HM system.

Description: We investigate the dynamics of donor bound excitons (D°X A ) at T  = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ∼ 1.3 meV dipole-like energy shift of D°X A is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ∼24 nm as well as an effective area of the dislocation with a radius of ∼95 nm, where the recombination can be regarded as entirely non-radiative.

Description: We have studied the magnetic order of highly strained (001)-oriented BiFeO 3 (BFO) thin films using 57 Fe Conversion Electron Mössbauer Spectrometry. From 90 K to 620 K the films exhibit a collinear antiferromagnetic structure, in contrast with the cycloidal structure observed in bulk BFO. Moreover, we find that both the planar magnetic anisotropy for compressive strain and out-of-plane anisotropy for tensile strain persist from 90 K up to the Néel temperature ( T N ), which itself shows only a weak strain dependence. An analysis of the line asymmetry of the paramagnetic doublet for temperatures above T N is used to reveal the strain-dependent rotation of the polarization direction, consistent with previous observations. Our results show that the lattice dynamics in BFO films are strongly strain-dependent, offering avenues toward acoustic phonon devices. Finally, we use the versatility of Mössbauer spectroscopy technique to reveal various multi-property features including magnetic states, polarization direction and elastic strain.

Description: Ohmic contacts fabricated by regrowth of n + GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

Description: Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nW and 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.

Description: ZnO/ZnSe heterostructure parallel arrays on glass substrate were prepared through ultrathin layers electrodeposition method combining with annealing treatment. There are two essential factors for the formation of such kind of parallel arrays: the periodical change of charges and ions concentration, and the mutual equilibrium of electric repulsion at the growth front. The research for photoresponse characteristics of the heterostructure arrays demonstrates a UV/visible broad spectral response.

Description: Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n H ) and extrinsic dopant concentration (N I , N Ag ) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n H . Upon substituting extrinsic dopants beyond a certain amount, the n H changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

Description: In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2 v 3 band at 6046.95 cm −1 using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

Description: We have studied the electronic structure of the L 1 0 ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2 p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3 d states and the hybridization between the Fe 3 d and Pt 5 d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3 d states modifies the valence band electronic structure of the L 1 0 ordered FePt thin film through the Fe 3 d -Pt 5 d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3 d states and the Fe 3 d -Pt 5 d hybridization as well as the spin-orbit interaction in the Pt 5 d states play important roles in the perpendicular MCA for L 1 0 -FePt.

Description: The objective of this paper is to demonstrate that the addition of properly tuned nonlinearities to a nonlinear system can increase the range over which a specific resonance responds linearly. Specifically, we seek to enforce two important properties of linear systems, namely, the force-displacement proportionality and the invariance of resonance frequencies. Numerical simulations and experiments are used to validate the theoretical findings.

Description: HoCrO 3 , Ho 0.67 Gd 0.33 CrO 3 , and GdCrO 3 bulk powder samples were prepared by citrate route. The phase purity and the structural properties of the samples were examined by x-ray diffraction and Raman spectroscopic measurements. The dc magnetization data revealed that the Cr 3+ ordering temperatures (Néel temperature) for the HoCrO 3 , Ho 0.67 Gd 0.33 CrO 3 , and GdCrO 3 samples are 140 K, 148 K, and 167 K, respectively, while the ac magnetization data revealed that the rare-earth (Ho) ordering occurs at ∼8 K for HoCrO 3 and Ho 0.67 Gd 0.33 CrO 3 samples. Temperature-induced magnetization reversal and spin reorientation were observed in GdCrO 3 bulk sample, which depends on applied magnetic field and disappears at ∼1500 Oe and 500 Oe, respectively. By fitting the dc magnetic data with Curie-Weiss law, the effective magnetic moments were calculated to be 11.66 μ B , 10.23 μ B , and 9.90 μ B for the HoCrO 3 , Ho 0.67 Gd 0.33 CrO 3 , and GdCrO 3 samples, respectively. The isothermal magnetization data showed that the magnetic behavior changed from canted antiferromagnetic in low temperature region (below Néel temperature) to paramagnetic at high temperature. It was found that Gd substitution considerably improves the magnetocaloric effect of HoCrO 3 . Pure GdCrO 3 bulk sample showed giant magnetocaloric entropy change (31.6 J/kg K at temperature ∼5 K and at ∼70 kOe), which is higher than that for polycrystalline RMnO 3 , RCrO 3 , and RFeO 3 bulk powder samples. This renders GdCrO 3 useful for potential applications in low-temperature magnetic refrigeration.