ALBERT

Description: Charge generation in a typical intermediate connector, composed of “n-type doped layer/transition metal oxide (TMO)/hole transporting layer (HTL),” of a tandem organic light-emitting device (OLED) has recently been found to arise from charge transfer at the TMO/HTL interfaces. In this paper, we investigate the effect of hole injection barriers from intermediate connectors on the performance of tandem OLEDs. The hole injection barriers are caused by the offset of the highest occupied molecular orbital (HOMO) energy levels between HTLs contained in the intermediate connector and the top electroluminescence (EL) unit. We also find that although charge generation can occur at the interfaces between the TMO and a wide variety of HTLs of different HOMO values, an increase in the hole injection barrier however limits the electroluminescence efficiency of the top EL units. In the case of large hole injection barriers, significant charge accumulation in the HTLs makes the intermediate connector lose its functionality gradually over operating time, and limits device stability.

Description: Spin-dependent transport properties in CoFe/MgO/n + -Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n + -Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d 2 I / dV 2 - V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δ d 2 I / dV 2 depends on the magnetic field and the full width at half-maximum of the Δ d 2 I / dV 2 – H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.

Description: We elucidate a strong room temperature stimulated emission (SE) of In 0.17 Ga 0.83 N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm 2 . Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.

Description: The relationship between carrier concentration and donor atomic concentration has been determined in n -type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH 3 ) 3 and P(GeH 3 ) 3 hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge 3 H 8 and Ge 4 H 10 Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds N d  = 10 17  cm −3 , at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n -type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies.

Description: We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L g  = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2  μ m gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f max value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

Description: The magnetic configuration of Mn 2 NiAl ribbon has been investigated. In contrast to Ni 2 MnAl, the compound Mn 2 NiAl with considerable disorder does exhibit ferromagnetism and, due to exchange interaction competition, both ferromagnetic and antiferromagnetic moment orientations can coexist between nearest neighbor Mn atoms. This is unexpected in Heusler alloys. Regarding the mechanism of the martensitic transformation in Mn 50 Ni 50− x Al x , it is found that increasing the Al content results in an unusual change in the lattice constant, a decrease of the transformation entropy change, and enhancement of the calculated electron localization. These results indicate that the p-d covalent hybridization between Mn (or Ni) and Al atoms gradually increases at the expense of the d-d hybridization between Ni and Mn atoms. This leads to an increased stability of the austenite phase and a decrease of the martensitic transformation temperature. For 11 ≤  x  ≤ 14, Mn 50 Ni 50− x Al x ferromagnetic shape memory alloys are obtained.

Description: Electrowetting (EW) has applications including displays, microactuation, miniaturized chemistry, adaptive optics, and energy harvesting—understanding the physics of EW junctions is of key importance. Here, the roles of semiconductor space-charge and electric double layer in continuous EW at an electrolyte-insulator-semiconductor junction are considered. A model is formulated in terms of experimental parameters—applied voltage, zero-bias wetting contact angle, semiconductor type and doping, insulator thickness and dielectric constant, and electrolyte concentration and dielectric constant. The model predicts, and experiments indicate, that the EW behavior is diminished for low concentration solutions (∼1–10 nM) and lowly doped silicon (10 14 –10 15  cm −3 ).

Description: We have studied the impact dynamics of non-Newtonian droplets containing poly-(ethylene oxide) (PEO) by using a high speed camera. To get a deeper insight into the droplet-substrate interaction on droplet impact behavior, both the bare droplet and the liquid marbles have been investigated. The usually observed anti-rebound phenomenon caused by the PEO additives can be rejuvenated by enwrapment of droplets with nanoparticles. The presence of PEO in bare droplets greatly enhances the contact line friction and leads to irreversible impalement of the surface structure. Whereas for liquid marbles, the nanoparticle shell on the droplet surface inhibits the impalement. Our results clearly demonstrate that it is the droplet-substrate friction rather than the bulk rheological properties of the liquid that plays the essential role in the anti-rebound effect.

Description: For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinning at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale.

Description: As a non-magnetic heavy metal is attached to a ferromagnet, a vertically flowing heat-driven spin current is converted to a transverse electric voltage, which is known as the longitudinal spin Seebeck effect (SSE). If the ferromagnet is a metal, this voltage is also accompanied by voltages from two other sources, i.e., the anomalous Nernst effect in both the ferromagnet and the proximity-induced ferromagnetic boundary layer. By properly identifying and carefully separating those different effects, we find that in this pure spin current circuit the additional spin current drawn by the heavy metal generates another significant voltage by the ferromagnetic metal itself which should be present in all relevant experiments.

Description: We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK.

Description: Spatial gaps between grains and other grains, substrates, or electrodes in organic electronic devices are one of the causes of the reduction in the electrical characteristics. In this study, we demonstrate that cold isostatic pressing (CIP) is an effective method to crush the gaps and enhance the electrical characteristics. CIP of metal-free phthalocyanine (H 2 PC) films induced a decrease in the film thickness by 34%–40% because of the gap crush. The connection of smaller grains into a larger grain and planarization of the film surface were also observed in the CIP film. The crystal axes of the H 2 PC crystallites were rearranged from the a-axis to the c-axis of the α-phase crystal structure in a direction perpendicular to the substrate by CIP, indicating favorable hole injection and transport in this direction because of a better overlap of π orbitals. Thermally stimulated current measurements showed that deep hole traps disappeared and the total hole-trap density decreased after CIP. These CIP-induced changes of the film thicknesses, crystal axes and the hole traps lead to a marked increase in the hole mobility of the H 2 PC films from 2.0 × 10 −7 to 4.0 × 10 −4 cm 2 /V s by 2000 times in the perpendicular direction. We believe that these findings are important for unveiling the underlying carrier injection and transport mechanisms of organic films and for enhancing the performance of future organic electronic devices.

Description: Anomalous Hall effect (AHE) based ferromagnetic resonance (FMR) measurements were carried out on perpendicularly magnetized Co/Pt multilayer single dots of 0.4–3  μ m in diameter. The resonance behavior was measured by detecting the decrease of perpendicular magnetization component due to magnetization precession. Resonance behavior was observed as a clear decrease of Hall voltages, and the obtained resonance fields were consistent with the results of vector-network-analyzer FMR. Spin-waves with cylindrical symmetry became significant by decreasing the dot diameter, and quantized multiple resonances were observed in the dot of 0.4 μm in diameter. The AHE based FMR proposed here is a powerful method to approach magnetization dynamics including spin waves and non-linear behavior excited in a finite nanostructure.

Description: Structured metal surfaces could support spoof surface plasmon polaritons (SPPs), the dispersion of which is determined by the cutoff condition of guided modes in the nanostructures. We show that we can achieve split spoof SPPs by breaking the degeneracy of guided helical modes in concentric nanostructures via the classic analogue of the Zeeman effect. This split effect is shown to be observable from the spectra of enhanced electromagnetic transmission. Spin-sensitive enhanced electromagnetic transmission and the associated characteristics of field are investigated. Transmission branches versus parallel wavevector can be satisfactorily fitted by using the dispersion of spoof SPPs.

Description: Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk.

Description: We demonstrate both theoretically and experimentally that the microwave-shielding effectiveness of a double-layer metallic mesh with a submillimeter period can be improved by increasing the separation between the two mesh layers (without affecting transmittance). This double-layer mesh consists of two layers of square aluminum mesh separated by a quartz-glass substrate. By increasing the substrate's optical thickness from zero to λ / 4   of the shielding band's upper frequency, the shielding of the double-layer mesh improves considerably, owing to the increased reflectivity of the double-layer mesh with increasing separation in the low-frequency band. A Ku-band shielding effectiveness of over 32 dB is observed for the double-layer mesh with a normalized visible transmittance greater than 91%. It is found that the electromagnetic shielding effectiveness is enhanced by over 7 dB (80.0% energy attenuation) across the Ku-band, compared with that of a single-layer mesh, while the optical transmittances are almost identical for both tested structures. Such an enhancement permits the design of high-transparency optical elements with stronger microwave shielding that can be achieved using single-layer metallic mesh.

Description: This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO 2 /Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

Description: In this paper, we explore the effects of electrostatic parametric amplification on a high quality factor (Q 〉 100 000) encapsulated disk resonator gyroscope (DRG), fabricated in 〈100〉 silicon. The DRG was operated in the n = 2 degenerate wineglass mode at 235 kHz, and electrostatically tuned so that the frequency split between the two degenerate modes was less than 100 mHz. A parametric pump at twice the resonant frequency is applied to the sense axis of the DRG, resulting in a maximum scale factor of 156.6  μ V/(°/s), an 8.8× improvement over the non-amplified performance. When operated with a parametric gain of 5.4, a minimum angle random walk of 0.034°/√h and bias instability of 1.15°/h are achieved, representing an improvement by a factor of 4.3× and 1.5×, respectively.

Description: We propose a control element for a Josephson spin valve. It is a complex Josephson device containing ferromagnetic (F) layer in the weak-link area consisting of two regions, representing 0 and π Josephson junctions, respectively. The valve's state is defined by mutual orientations of the F-layer magnetization vector and boundary line between 0 and π sections of the device. We consider possible implementation of the control element by introduction of a thin normal metal layer in a part of the device area. By means of theoretical simulations, we study properties of the valve's structure as well as its operation, revealing such advantages as simplicity of control, high characteristic frequency, and good legibility of the basic states.

Description: Thin films of the lead-free ferroelectric Na 0.5 Bi 0.5 TiO 3 grown on thin-film Pt electrodes supported by SrTiO 3 substrates have a complex microstructure consisting of crystalline grains with three distinct major crystallographic orientations. The piezoelectric response measured in spatially separated sub-micron grains using time-resolved synchrotron x-ray microdiffraction is highly inhomogeneous even among grains sharing the same major orientation. The piezoelectric coefficient d 33 varies by nearly a factor of two in a series of areas sharing the 〈001〉 orientation. The piezoelectric inhomogeneity is linked to the peculiar microstructure of the film, arising from local variations in the stress imposed by surrounding grains with different crystallographic orientations and differing directions of the ferroelectric remnant polarization. A systematic nonlinearity of the piezoelectric strain is observed in applied electric fields with small magnitudes in all regions, consistent with the coexistence of domains of differing polarization direction at zero applied electric field.

Description: In a recent article, Serov et al. [J. Appl. Phys. 116 , 034507 (2014)] claim: “This study represents the first time that the high-field behavior in graphene on a substrate was investigated taking into account intrinsic graphene properties,” ignoring the most recent anisotropic distribution function [V. K. Arora et al ., J. Appl. Phys. 112 , 114330 (2012)] also published in J. Appl. Phys., targeting the same experimental data [V. E. Dorgan et al. , Appl. Phys. Lett. 97 , 082112 (2010)]. The claim of Serov et al. of being first is refuted and many shortcomings of the hydrodynamic model for a highly quantum and degenerate graphene nanolayer are pointed out.

Description: Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

Description: The current paper reports successful syntheses of Ni–TiN composite coatings by pulse electrodeposition. The effect of pulse frequency on the microstructures, nanomechanical, and wear properties of the coatings was investigated using transmission electron microscopy, X–ray diffraction, nanoindenter, scanning electron microscopy, and wear test instrument. The results showed that the Ni–TiN composite coating prepared at the pulse frequency of 100 Hz showed the presence of a less number of TiN particles and some degrees of aggregation in micro-regions. By contrast, in the Ni–TiN coating deposited at the pulse frequency of 500 Hz, the TiN particles were large in number and dispersed homogeneously, thereby, offering the coating a uniform and fine structure. The average grain diameters of Ni and TiN in the coating prepared at 100 Hz were 154.7 and 44.8 nm, respectively, whereas those for the coating prepared at 500 Hz were 67.3 and 25.9 nm, respectively. The maximum TiN content in the Ni-TiN coating deposited at 800 Hz was approximately 10.5 wt. %. The maximum microhardness and the Young's modulus values for the Ni–TiN composite coatings deposited at 800 Hz were 35.7 GPa and 167.4 GPa, respectively. Furthermore, the Ni–TiN composite coating prepared at 100 Hz had more severe damages, whereas the morphologies of worn surface of the coatings deposited at 500 Hz and 800 Hz were smooth and only a few small pits appeared on the surface.

Description: We report on the controlled removal of an amorphous Se capping layer from Bi 2 Te 3 and Bi 2 Se 3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi 2 Te 3 . Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi 2 Te 3 lattice down to ∼7 nm from its top surface while remaining iso-structural.

Description: A system of generating and receiving orbital angular momentum (OAM) radio beams, which are collectively formed by two circular array antennas (CAAs) and effectively optimized by two intensity controlled masks, is proposed and experimentally investigated. The scheme is effective in blocking of the unwanted OAM modes and enhancing the power of received radio signals, which results in the capacity gain of system and extended transmission distance of the OAM radio beams. The operation principle of the intensity controlled masks, which can be regarded as both collimator and filter, is feasible and simple to realize. Numerical simulations of intensity and phase distributions at each key cross-sectional plane of the radio beams demonstrate the collimated results. The experimental results match well with the theoretical analysis and the receive distance of the OAM radio beam at radio frequency (RF) 20 GHz is extended up to 200 times of the wavelength of the RF signals, the measured distance is 5 times of the original measured distance. The presented proof-of-concept experiment demonstrates the feasibility of the system.

Description: We demonstrate chemical doping of a topological insulator Bi 2 Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2 Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2 Se 3 , a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

Description: Scanning near-field photoluminescence (PL) spectroscopy was applied to study spatial variations of emission spectra of Al x Ga 1−x N epilayers with 0.6 ≤ x ≤ 0.7 . PL spectra were found to be spatially uniform with peak wavelength standard deviations of only ∼2 meV and ratios between peak intensity standard deviations and average peak intensity values of 0.06. The observed absence of correlation between the PL peak wavelength and intensity shows that spatial distribution of nonradiative recombination centers is not related to band potential fluctuations. Our results demonstrate that the homogeneous broadening and the random cation distribution primarily determine PL linewidths for layers grown under optimized conditions.

Description: We demonstrate direct evidence that the strain variation induced by local lattice distortion exists in the surface layers of SnO 2 nanowires by coupled scanning transmission electron microscopy and digital image correlation techniques. First-principles calculations suggest that surface reduction and subsurface oxygen vacancies account for such vigorous wavelike strain. Our study revealed that the localized change of surface atomistic configuration was responsible for the observed reduction of elastic modulus and hardness of SnO 2 nanowires, as well as the superior sensing properties of SnO 2 nanowire network.

Description: Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In 0.53 Ga 0.47 As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

Description: We design and experimentally realize an ultra-broad band metamaterial-based acoustic absorption material. Unlike traditional acoustic absorbers, the designed device features a simple configuration unrestricted by the material type and does not require extra sound-absorbing materials, suggesting the potential to have simultaneously structural-stiffness and environmental-friendliness. Analytical analyses are provided to explain such distinct characteristics, which are revealed to stem from the localization and dissipation of waves with different frequencies at particular spatial positions. This is also demonstrated both numerically and experimentally. Our results may offer possible designs for various applications such as noise reduction and making underwater anechoic materials.

Description: The absolute photoluminescence (PL) quantum yield (QY) of multilayers of Silicon nanocrystals (SiNCs) separated by SiO 2 barriers were thoroughly studied as function of the barrier thickness, excitation wavelength, and temperature. By mastering the plasma-enhanced chemical vapor deposition growth, we produce a series of samples with the same size-distribution of SiNCs but variable interlayer barrier distance. These samples enable us to clearly demonstrate that the increase of barrier thickness from ∼1 to larger than 2 nm induces doubling of the PL QY value, which corresponds to the change of number of close neighbors in the hcp structure. The temperature dependence of PL QY suggests that the PL QY changes are due to a thermally activated transport of excitation into non-radiative centers in dark NCs or in the matrix. We estimate that dark NCs represent about 68% of the ensemble of NCs. The PL QY excitation spectra show no significant changes upon changing the barrier thickness and no clear carrier multiplication effects. The dominant effect is the gradual decrease of the PL QY with increasing excitation photon energy.

Description: High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process.

Description: GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by atom probe tomography (APT). The study allows us to confirm that Al atoms tend to segregate within the AlGaAs shells towards the vertices of the hexagons defining the nanowire cross section. We also find strong alloy fluctuations remaining AlGaAs shell, leading occasionally to the formation of quantum dots (QDs). The PL emission energies predicted in the framework of a 3D effective mass model for a QD analyzed by APT and the PL spectra measured on other nanowires from the same growth batch are consistent within the experimental uncertainties.

Description: Rectilinear deposition of elongated DNA molecules was achieved by the forced dewetting of a DNA solution droplet over a nanograting. Uncoiling of double stranded DNA is made by the conjunction of both DNA terminal anchoring on a functionalized substrate and capillary force acting throughout the forced dewetting of a DNA solution droplet. The deposition over a nanograting allows the molecule to be uncoiled on the edges of the grooves and to maintain a rectilinear conformation. This DNA deposition technique uses transparent nanograting obtained by laser interference lithography and has been developed for the specific need in observation dsDNA molecules in extended conformation.

Description: Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B 2-Co 2 FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5 K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.

Description: This paper analyses the use of impedance spectroscopy as a characterization tool applied to thermoelectric materials. The impedance function of the thermoelectric system under adiabatic conditions and Peltier mode operation is calculated by solving the heat equation in the frequency domain. The analysis, focused on the complex plane, provides the required equivalent circuit elements to interpret the impedance measurements. Using this approach, all the relevant thermoelectric parameters and thermal properties can be potentially extracted at a given temperature from the impedance spectra, i.e., the Seebeck coefficient, electrical resistivity, thermal conductivity, figure of merit (zT), specific heat, and thermal diffusivity. This can be done without the need of measuring temperature differences. To validate the models described, impedance measurements have been carried out in single thermoelectric elements and modules, showing an excellent agreement with the theory. The simple nature of the measurements in conjunction with the advantage of obtaining all the important thermoelectric parameters opens up the possibility of establishing impedance spectroscopy as a very useful characterization method for the thermoelectric field.

Description: Single-phase and oxygen doped Mn 2 N 0.86 thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The films grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature and ferromagnetic ordering agreed well with the Bloch-law T 3 / 2 at room-temperature. We further demonstrate the enlarged Mn 3s splitting (6.46 eV) and its possible relation to the observed ferromagnetism. Our study not only provide a strategy for further theoretical work on oxygen doped manganese nitrides, but also shed promising light on utilizing its room-temperature FM property to fabricate spintronic devices.

Description: An arsenic (As)-doped poly-silicon nanowire gate-all-around transistor fabricated using standard semiconductor methods was used to measure the Coulomb blockade effect by applying a tunable gate voltage. Two-level trapping states due to the random telegraph signal of fluctuating drain current were observed in the silicon transport channel. Under high magnetic fields, the superposition points of differential conductance revealed weak 2-electron singlet-triplet splitting states of the arsenic magnetic impurity. The weak spin-orbital coupling suggests that the electron-spin-polarization in the As-doped silicon nanowire and the two-level trapping state coexisted in the Coulomb blockade oscillations. These characteristics indicate that a few arsenic donors strongly affect the quantum behavior of the poly-silicon material.

Description: Enhancing the visibility of images taken in the hazy weather is important in many applications. Among many dehazing methods, those based on polarimetric imaging techniques have several advantages, such as ease of keeping detailed information, low cost, and high efficiency. In this paper, we propose a novel and robust dehazing algorithm based on polarimetric imaging. By introducing the orientation-angle information from the Stokes matrix, all the parameters used in dehazing performance can be effectively, precisely and automatically estimated, and no additional human-computer interaction is needed. Besides, this method can also be used in handling hazy images without sky region. Experimental results show that such a method can greatly enhance the visibility of hazy images.

Description: The field-orientation dependent magnetoelectric coupling is experimentally studied for a rectangular Terfenol-D/PZT/Terfenol-D laminated structure. The considered magnetic field, namely the dc-bias magnetic field or the ac-excitation magnetic field, is allowed to be spatially re-orientated between two orthogonal geometric dimensions of the composite. In the study, the direction of the excitation can be fixed in the longitudinal (Scheme-I) or thickness (Scheme-II) directions, while considering the bias orientation. Alternatively, the bias field can be restricted to the longitudinal (Scheme-III) or thickness (Scheme-IV) directions, while the excitation orientation is considered. The variation in magnetoelectric coefficient as a function of the bias magnitude is studied with special attention paid to the field-orientation dependency. For the testing schemes of I and II, the direction of the dc-bias field can be re-oriented by forming an angle with the fixed direction of the ac-excitation field. As the angle changes from 0° to 90°, the magnetoelectric coupling evolves from L-T mode to S-T surface shear for Scheme-I, and from T-T mode to S-T thickness shear for Scheme-II. The bias-field-orientation dependence demonstrates a complex pattern due to the varying overall state of anisotropy in Terfenol-D. In Scheme-I with low bias magnitude, the orientation dependence can be represented by the measured effective longitudinal piezomagnetic coefficient. In addition, the optimal bias field for maximum magnetoelectric coefficient is observed to linearly increase with the bias orientation angle. Alternatively, the orientation dependence in Schemes III and IV is more predictable due to the barely changed overall state of anisotropy. In this case, Scheme-III shows that the magnetoelectric coefficient decreases monotonically with the orientation angle and Scheme-IV indicates that the maximum coefficient is attained at around 60°. The dependence of the magnetoelectric coupling on the excitation-filed orientation can be understood via analysis of the resultant magnetostriction in Terfenol-D with assumed effective magnetization, which may depart from the bias field due to the strong demagnetization effect. The analysis is supported by the computed field-orientation dependence of the magnetostriction in Terfenol-D.

Description: The results of electronic structure calculations for a variety of palladium hydrides are presented. The calculations are based on density functional theory and used different local and semilocal approximations. The thermodynamic stability of all structures as well as the electronic and chemical bonding properties are addressed. For the monohydride, taking into account the zero-point energy is important to identify the octahedral Pd-H arrangement with its larger voids and, hence, softer hydrogen vibrational modes as favorable over the tetrahedral arrangement as found in the zincblende and wurtzite structures. Stabilization of the rocksalt structure is due to strong bonding of the 4 d and 1 s orbitals, which form a characteristic split-off band separated from the main d -band group. Increased filling of the formerly pure d states of the metal causes strong reduction of the density of states at the Fermi energy, which undermines possible long-range ferromagnetic order otherwise favored by strong magnetovolume effects. For the dihydride, octahedral Pd-H arrangement as realized, e.g., in the pyrite structure turns out to be unstable against tetrahedral arrangement as found in the fluorite structure. Yet, from both heat of formation and chemical bonding considerations, the dihydride turns out to be less favorable than the monohydride. Finally, the vacancy ordered defect phase Pd 3 H 4 follows the general trend of favoring the octahedral arrangement of the rocksalt structure for Pd:H ratios less or equal to one.

Description: The strategy of suppressing grain growth by dispersing nanoscale particles that pin the grain boundaries is demonstrated in a nanocrystalline thermoelectric compound. Yttria nanoparticles that were incorporated by mechanical alloying enabled nanocrystalline (i.e., d 

Description: This work shows the application of metal ion-implantation to realize an efficient second-generation TiO 2 photocatalyst. High fluence Fe + ions were implanted into thin TiO 2 films and subsequently annealed up to 550 °C. The ion-implantation process modified the TiO 2 pure film, locally lowering its band-gap energy from 3.2 eV to 1.6–1.9 eV, making the material sensitive to visible light. The measured optical band-gap of 1.6–1.9 eV was associated with the presence of effective energy levels in the energy band structure of the titanium dioxide, due to implantation-induced defects. An accurate structural characterization was performed by Rutherford backscattering spectrometry, transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and UV/VIS spectroscopy. The synthesized materials revealed a remarkable photocatalytic efficiency in the degradation of organic compounds in water under visible light irradiation, without the help of any thermal treatments. The photocatalytic activity has been correlated with the amount of defects induced by the ion-implantation process, clarifying the operative physical mechanism. These results can be fruitfully applied for environmental applications of TiO 2 .

Description: Monolayers of tin (stannanane) functionalized with halogens have been shown to be topological insulators. Using density functional theory (DFT), we study the electronic properties and room-temperature transport of nanoribbons of iodine-functionalized stannanane showing that the overlap integral between the wavefunctions associated to edge-states at opposite ends of the ribbons decreases with increasing width of the ribbons. Obtaining the phonon spectra and the deformation potentials also from DFT, we calculate the conductivity of the ribbons using the Kubo-Greenwood formalism and show that their mobility is limited by inter-edge phonon backscattering. We show that wide stannanane ribbons have a mobility exceeding 10 6 cm 2 /Vs. Contrary to ordinary semiconductors, two-dimensional topological insulators exhibit a high conductivity at low charge density, decreasing with increasing carrier density. Furthermore, the conductivity of iodine-functionalized stannanane ribbons can be modulated over a range of three orders of magnitude, thus rendering this material extremely interesting for classical computing applications.

Description: Work function, photoemission yield, and Auger electron spectra were measured on (001) p-type GaAs during negative electron affinity (NEA) surface preparation, surface degradation, and heating processes. The emission current sensitively depends on work function change and its dependence allows us to determine that the shape of the vacuum barrier was close to double triangular. Regarding the NEA surface degradation during photoemission, we discuss the importance of residual gas components the oxygen and hydrogen. We also found that gentle annealing (≤100 °C) of aged photocathodes results in a lower work function and may offer a patch to reverse the performance degradation.

Description: Trivalent dysprosium-doped Lu 3 Ga 5 O 12 nano-garnets have been prepared by sol-gel method and characterized by X-ray powder diffraction, high-resolution transmission electron microscopy, dynamic light scattering, and laser excited spectroscopy. Under a cw 457 nm laser excitation, the white luminescence properties of Lu 3 Ga 5 O 12 nano-garnets have been studied as a function of the optically active Dy 3+ ion concentration and at low temperature. Decay curves for the 4 F 9/2 level of Dy 3+ ion exhibit non-exponential nature for all the Dy 3+ concentrations, which have been well-fitted to a generalized energy transfer model for a quadrupole-quadrupole interaction between Dy 3+ ions without diffusion. From these data, a simple rate-equations model can be applied to predict that intense white luminescence could be obtained from 1.8 mol% Dy 3+ ions-doped nano-garnets, which is in good agreement with experimental results. Chromaticity color coordinates and correlated color temperatures have been determined as a function of temperature and are found to be within the white light region for all Dy 3+ concentrations. These results indicate that 2.0 mol% Dy 3+ ions doped nano-garnet could be useful for white light emitting device applications.

Description: In this paper, 80GeO 2 -8Ga 2 O 3 -10BaO-2Nb 2 O 5 -6PbO (in mol%) glass samples with different Tm 2 O 3 concentrations (0, 0.5, 0.75, 1, 1.25, and 1.5 mol. %) were prepared by traditional melt-quenching method. According to the measurement of thermal properties of the host glass, the glass transition temperature is 596.7 °C and no crystallization peak is observed. Judd–Ofelt parameters Ω t (t = 2, 4, 6) and fluorescent lifetimes were obtained by Judd-Ofelt theory. The similar values of Judd–Ofelt parameters and the full-width at half-maximums of ∼1800 nm indicate the local environment of Tm 3+ changes little with increment of Tm 2 O 3 concentrations. Maximum stimulated emission cross-section of ∼1800 nm is 6.22 × 10 −21 cm 2 as calculated by Fuchtbauer–Ladenburg formula. Energy migration among Tm 3+ ions was analyzed by the extended overlap integral method. The non-radiative transition rates between mainly energy levels of Tm 3+ were calculated. Non-radiative transition rate of 3 F 4 energy level caused by OH was analyzed by rate equation and deduced by fitting the fluorescence decay curve.

Description: Properties of metallic materials are intrinsically determined by their electron behavior. However, relevant theoretical treatment involving quantum mechanics is complicated and difficult to be applied in materials design. Electron work function (EWF) has been demonstrated to be a simple but fundamental parameter which well correlates properties of materials with their electron behavior and could thus be used to predict material properties from the aspect of electron activities in a relatively easy manner. In this article, we propose a method to extract the electron work functions of binary solid solutions or alloys from their phase diagrams and use this simple approach to predict their mechanical strength and surface properties, such as adhesion. Two alloys, Fe-Ni and Cu-Zn, are used as samples for the study. EWFs extracted from phase diagrams show same trends as experimentally observed ones, based on which hardness and surface adhesive force of the alloys are predicted. This new methodology provides an alternative approach to predict material properties based on the work function, which is extractable from the phase diagram. This work may also help maximize the power of phase diagram for materials design and development.

Description: Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%.

Description: In this work, a time-resolved tunable diode-laser (DL) induced fluorescence (TR-TDLIF) method calibrated by absorption spectroscopy has been developed in order to determine atom and flux velocity distribution functions (AVDF and FVDF) of the energetic and the thermalized atoms in pulsed plasmas. The experimental set-up includes a low-frequency (∼3 Hz) and high spectral-resolution DL (∼0.005 pm), a fast rise-time pulse generator, and a high power impulse magnetron sputtering (HiPIMS) system. The induced TR-TDLIF signal is recorded every 0.5  μ s with a digital oscilloscope of a second-long trace. The technique is illustrated with determining the AVDF and the FVDF of a metastable state of the sputtered neutral tungsten atoms in the HiPIMS post-discharge. Gaussian functions describing the population of the four W isotopes were used to fit the measured TR-TDLIF signal. These distribution functions provide insight into transition from the energetic to thermalized regimes from the discharge onset. This technique may be extended with appropriate DLs to probe any species with rapidly changing AVDF and FVDF in pulsed and strongly oscillating plasmas.

Description: Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl 4 , trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

Description: Fracture mechanisms of metallic glasses are fundamentally different from that of crystalline alloys. Nano-voids formation and coalescence inside shear bands were believed to be one of the reasons causing the final failures. Although molecule dynamic simulations have successfully simulated cavitation in shear bands of brittle metallic glasses, direct experimental evidences are still rare. By carefully examining the shear bands of Pd 40.5 Ni 40.5 P 19 , nano-voids and their coalescence have been observed in the center-diffused region of shear bands. It is experimentally confirmed that nano-voids formation and their coalescence into large voids within shear bands is one of fracture mechanisms of metallic glasses.

Description: In addition to boron and oxygen, copper is also known to cause light-induced degradation (LID) in silicon. We have demonstrated previously that LID can be prevented by depositing negative corona charge onto the wafer surfaces. Positively charged interstitial copper ions are proposed to diffuse to the negatively charged surface and consequently empty the bulk of copper. In this study, copper out-diffusion was confirmed by chemical analysis of the near surface region of negatively/positively charged silicon wafer. Furthermore, LID was permanently removed by etching the copper-rich surface layer after negative charge deposition. These results demonstrate that (i) copper can be effectively removed from the bulk by negative charge, (ii) under illumination copper forms a recombination active defect in the bulk of the wafer causing severe light induced degradation.

Description: Four-wave mixing (FWM) spectroscopy reveals clear signatures associated with the exciton, free carrier inter-band transitions, and the Urbach band tail in low-temperature-grown GaAs, providing a direct measure of the effective band gap as well as insight into the influence of disorder on the electronic structure. The ability to detect (and resolve) these contributions, in contrast to linear spectroscopy, is due to an enhanced sensitivity of FWM to the optical joint density of states and to many-body effects. Our experiments demonstrate the power of FWM for studying the near-band-edge optical properties and coherent carrier dynamics in low-temperature-grown semiconductors.

Description: Besides crystallization time and temperature, the mass density change upon crystallization is a key parameter governing the reliability of phase change random access memory. Indeed, few percentages density change induces considerable mechanical stress in memory cells, leading to film delamination with subsequent electrical failures. This letter presents an extensive study of density change upon crystallization in a series of Ga-Sb thin films with various antimony contents. The mass density of the films is precisely determined by x-ray reflectivity in both their amorphous and crystalline states. The variations of the density in crystalline and amorphous films according to the Sb content found to cross with a zero-density change for 70 at. % Sb. The peculiar behavior of Ga-Sb thin films upon crystallization may be linked to their stress state and mechanical properties.

Description: Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

Description: Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm −1 that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

Description: The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 10 7  A cm −2  sr −1 for a 30-keV beam energy with the polarization of 82%, which corresponds to 3.1 × 10 8  A cm −2  sr −1 for a 200-keV beam energy. The resulting electron beam exhibited a long coherence length at the specimen position due to the high parallelism of (1.7 ± 0.3) × 10 −5  rad, which generated interference fringes representative of a first-order correlation using an electron biprism. The beam also had a high degeneracy of electron wavepacket of 4 × 10 −6 . Due to the high polarization, the high degeneracy and the long coherence length, the spin-polarized electron beam can enhance the antibunching effect.

Description: Multiphase nano-structured permanent magnets show a high thermal stability of remanence and a high energy product while the amount of rare-earth elements is reduced. Non-zero temperature micromagnetic simulations show that a temperature coefficient of remanence of −0.073%/K and that an energy product greater than 400 kJ/m 3 can be achieved at a temperature of 450 K in a magnet containing around 40 volume percent Fe 65 Co 35 embedded in a hard magnetic matrix.

Description: Both the linear and nonlinear optical properties of Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT 0.85 ) ferroelectric thin films deposited on quartz substrates were investigated. The fundamental optical constants were determined as a function of light wavelength by optical transmittance measurements. By performing single-beam Z-scan experiments with femtosecond laser pulses at a wavelength of 800 nm, the two-photon absorption (TPA) coefficient β and third-order nonlinear refraction index γ were measured to be 1.15 × 10 2  cm/GW and −8.15 × 10 −3 cm 2 /GW, respectively. The large TPA is attributed to an indirect transition process via the intermediate energy levels and the large refractive nonlinearity is the result of the electronic polarization and ferroelectric polarization arisen from the femtosecond midinfrared radiation. The results indicate that the BNT 0.85 thin film is a promising candidate for applications in nonlinear photonic devices.

Description: The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.

Description: The properties of multilayer exfoliated MoTe 2 field-effect transistors (FETs) on SiO 2 were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p -type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1  ×  10 5 , for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe 2 . When the channel is turned-on and p -type, the temperature dependence is barrier-limited by the Au/Ti/MoTe 2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics.

Description: The magneto-caloric response of the Gd 60 Co 25 Al 15 amorphous alloys was investigated in this work. The amorphous rod exhibits an excellent magneto-caloric effect with a peak value of magnetic entropy change (− ΔS m peak ) up to 10 Jkg −1 K −1 at 125 K under a field of 5 T, and the highest adiabatic temperature change (Δ T ad  = 5.3 K) under the same field among the bulk metallic glasses yet reported in the literature. In contrast, although the thin amorphous ribbons show similar − ΔS m peak and refrigeration capacity to the as-cast rod under 5 T, the higher − ΔS m peak of the ribbons under a lower magnetic field indicates the different magneto-caloric response between the two amorphous alloys. A more detailed investigation has been performed on the field dependence of − ΔS m peak for a deeper insight into the physical characteristics of the amorphous materials.

Description: Morphologically driven dynamic wickability is essential for determining the hydrodynamic status of solid-liquid interface. We demonstrate that the dynamic wicking can play an integral role in supplying and propagating liquid through the interface, and govern the critical heat flux (CHF) against surface dry-out during boiling heat transfer. For the quantitative control of wicking, we manipulate the characteristic lengths of hexagonally arranged nanopillars within sub-micron range through nanosphere lithography combined with top-down metal-assisted chemical etching. Strong hemi-wicking over the manipulated interface (i.e., wicking coefficients) of 1.28 mm/s 0.5 leads to 164% improvement of CHF compared to no wicking. As a theoretical guideline, our wickability-CHF model can make a perfect agreement with improved CHF, which cannot be predicted by the classic models pertaining to just wettability and roughness effects, independently.

Description: We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D 2 O) on the n-type 4H-SiC carbon face (000 1 ¯ ) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D 2 O exposure is proportional to the total D amount at the interface.

Description: The microfluidic optomechanical ring resonator (μFOMRR) based on a thin-walled glass capillary supports high Q-factor (〉10 3 ) mechanical modes in the presence of liquids. In this letter, the sensitivity of the μFOMRR to the surface change is studied by layer-by-layer removal of SiO 2 molecules from the μFOMRR inner surface using various concentrations of hydrofluoric acid solutions. A frequency downshift is observed with a sensitivity for the surface density change of 1.2 Hz/(pg/mm 2 ), which translates to a detection limit of 83 pg/mm 2 . This work opens a door to using the optomechanical mode for detection and characterization of molecules near the resonator surface.

Description: We report on the intercalation of a submonolayer of copper at 775 K underneath graphene epitaxially grown on Ir(111) studied by means of low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) at 77 K. Nucleation and growth dynamics of Cu below graphene have been investigated, and, most importantly, the intercalation mechanism has been identified. First, LEED patterns reveal the pseudomorphic growth of Cu on Ir under the topmost graphene layer resulting in a large Cu in-plane lattice parameter expansion of about 6% compared to Cu(111). Second, large-scale STM topographs as a function of Cu coverage show that Cu diffusion on Ir below graphene exhibits a low energy barrier resulting in Cu accumulation at Ir step edges. As a result, the graphene sheet undergoes a strong edges reshaping. Finally, atomically-resolved STM images reveal a damaged graphene sheet at the atomic scale after metal intercalation. Point defects in graphene were shown to be carbon vacancies. According to these results, a Cu penetration path beneath graphene is proposed to occur via metal aided defect formation with no or poor self healing of the graphene sheet. This work illustrates the fact that Cu intercalation is harmful for graphene grown on Ir(111) at the atomic scale.

Description: Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 10 12  W/cm 2 . The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅10 19  cm − 3 , which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.

Description: X-ray luminescence tomography (XLT) is an imaging technology based on X-ray-excitable materials. The main purpose of this paper is to obtain quantitative luminescence concentration using the structural information of the X-ray computed tomography (XCT) in the hybrid cone beam XLT/XCT system. A multi-wavelength luminescence cone beam XLT method with the structural a priori information is presented to relieve the severe ill-posedness problem in the cone beam XLT. The nanophosphors and phantom experiments were undertaken to access the linear relationship of the system response. Then, an in vivo mouse experiment was conducted. The in vivo experimental results show that the recovered concentration error as low as 6.67% with the location error of 0.85 mm can be achieved. The results demonstrate that the proposed method can accurately recover the nanophosphor inclusion and realize the quantitative imaging.

Description: Anti-Stokes photoluminescence is measured in high-quality GaAs quantum wells. The primary pathway for interband optical absorption and hence emission under subbandgap photoexcitation is the optical phonon-mediated second-order electric dipole transition. This conclusion is drawn from the remarkable agreement between predictions of second-order perturbation calculation and the measured intensity of anti-Stokes photoluminescence, both as function of the detuning wavelength and temperature. The results are of direct relevance to laser cooling of solids where phonon-assisted upconversion is a necessary condition.

Description: The electron spin dynamics in n -doped bulk cubic GaN is investigated for very high temperatures from 293 K up to 500 K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1 ns at 500 K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.

Description: We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

Description: Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

Description: We demonstrate experimentally close to total absorption in monolayer graphene based on critical coupling with guided resonances in transfer printed photonic crystal Fano resonance filters at near infrared. Measured peak absorptions of 35% and 85% were obtained from cavity coupled monolayer graphene for the structures without and with back reflectors, respectively. These measured values agree very well with the theoretical values predicted with the coupled mode theory based critical coupling design. Such strong light-matter interactions can lead to extremely compact and high performance photonic devices based on large area monolayer graphene and other two–dimensional materials.

Description: The mechanism and realization of a band-agile coaxial relativistic backward-wave oscillator (RBWO) are presented. The operation frequency tuning can be easily achieved by merely altering the inner-conductor length. The key effects of the inner-conductor length contributing to the mechanical frequency tunability are investigated theoretically and experimentally. There is a specific inner-conductor length where the operation frequency can jump from one mode to another mode, which belongs to a different operation band. In addition, the operation frequency is tunable within each operation band. During simulation, the L-band microwave with a frequency of 1.61 GHz is radiated when the inner-conductor length is 39 cm. Meanwhile, the S-band microwave with a frequency of 2.32 GHz is radiated when the inner-conductor length is 5 cm. The frequency adjustment bandwidths of L-band and S-band are about 8.5% and 2%, respectively. Moreover, the online mechanical tunability process is described in detail. In the initial experiment, the generated microwave frequencies remain approximately 1.59 GHz and 2.35 GHz when the inner-conductor lengths are 39 cm and 5 cm. In brief, this technical route of the band-agile coaxial RBWO is feasible and provides a guide to design other types of band-agile high power microwaves sources.

Description: Spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) are observed simultaneously in the Pt/Y 3 Fe 5 O 12 hybrid structure when thermal gradient is produced by Joule heating. According to their dependences on applied current, these two effects can be separated. Their dependence on heating power and magnetic field is systematically studied. With the increase of heating power, the SSE enhances linearly, whereas the SMR decreases slowly. The origin of the spin currents is further analyzed. The heating power dependences of the spin currents associated with the SSE and the SMR are found to be different.

Description: The magnetic and dielectric polarization properties of the single crystal samples of CuFe 1− x Ga x O 2 ( x  = 0 and 0.02) are investigated. Experimental results show that the magnetization and dielectric polarizations are anisotropy and coupled together. Compared with pure CuFeO 2 , in the case with the magnetic field parallel to the c axis, a field-induced phase transition with a hysteresis is clearly observed between the five-sublattice (5SL) and three-sublattice (3SL) phases. Specially, an obvious spontaneous dielectric polarization is observed in CuFe 0.98 Ga 0.02 O 2 in a lower magnetic field region, indicating that the Ga doping has an effect on the enhancement of spontaneous dielectric polarization. Based on the dilution effect, change of exchange interaction, and partial release of the spin frustration due to the structural modulation of the Ga ion dopant, the origin of the magnetization, and spontaneous polarization characteristics are discussed and the complete dielectric polarization diagrams are assumed.

Description: Perovskite phase SnTiO 3 was predicted to have a large spontaneous polarization of 1.1 C/m 2 , but its synthesis has been unsuccessful so far. Here, we calculated the ferroelectric properties of a series of Ruddleson-Popper (RP) phase SnO(SnTiO 3 ) n ( n  = 1 ∼ 6), with perovskite SnTiO 3 as the ending structure ( n  = ∞), using the first principles calculations. An analysis of RP phase tolerance factor indicated that the fabrication of the RP phase SnO(SnTiO 3 ) n may be easier than that for SnTiO 3 . For bulk SnO(SnTiO 3 ) 1 , the most stable phase is Aba2 with a spontaneous polarization of 0.53 C/m 2 along [110]. Aba2 is also the most stable phase for SnO(SnTiO 3 ) 1 under biaxial strain. For RP phase SnO(SnTiO 3 ) n on a SrTiO 3 substrate, there is also a phase transition with the increasing layer thickness n . The polarization increases with strain or layer thickness. The ferroelectric properties and size effect in the free standing RP phase SnO(SnTiO 3 ) n nanosheets were also investigated, and the in -plane polarization is 60% larger than that of the bulk.

Description: We investigate the growth-temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge 1− x Fe x films ( x  = 6.5% and 10.5%), and reveal the correlation of the magnetic properties with the lattice constant, Curie temperature ( T C ), non-uniformity of Fe atoms, stacking-fault defects, and Fe-atom locations. While T C strongly depends on the growth temperature, we find a universal relationship between T C and the lattice constant, which does not depend on the Fe content x . By using the spatially resolved transmission-electron diffractions combined with the energy-dispersive X-ray spectroscopy, we find that the density of the stacking-fault defects and the non-uniformity of the Fe concentration are correlated with T C . Meanwhile, by using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, we clarify that about 15% of the Fe atoms exist on the tetrahedral interstitial sites in the Ge 0.935 Fe 0.065 lattice and that the substitutional Fe concentration is not correlated with T C . Considering these results, we conclude that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.

Description: A strong microwave shielding effect due to the excitation of microwave eddy-currents exists for metallic films of sub-skin-depth thickness (10–100 nm). If the film is ferromagnetic, this effect strongly influences results of the broadband stripline ferromagnetic resonance (FMR) spectroscopy. It also potentially hampers the development of magnetically tuneable metamaterials. By means of rigorous numerical simulations, we address an important problem of the dependence of the eddy current effect on the width of the stripline used for driving magnetisation dynamics in the broadband FMR spectroscopy. We study theoretically electrodynamics of realistic striplines and also extend the main result from the case of continuous conductive films to periodic conductive nanostructures—magnonic crystals. Based on these findings, we also give recommendations on improving performance of magnetically tuneable metamaterials, which are based on conductive ferromagnetic films and nanostructures. In our simulations, we consider examples of microstrip lines which are 5  μ m to 1.5 mm wide. However, the simulation results should be equally applicable to coplanar waveguides with the same width of the signal line.

Description: We demonstrate a resolution of 45 nm with a sample size down to 3  μ m × 3  μ m is achieved in a short exposure time of 2 s, from the diffraction pattern generated by a table-top high harmonic source at around 30 nm. By using a narrow-bandwidth focusing mirror, the diffraction pattern's quality is improved and the required exposure time is significantly reduced. In order to obtain a high quality of the reconstructed image, the ratio of the beam size to the sample size and the curvature of the focused beam need to be considered in the reconstruction process. This new experimental scheme is very promising for imaging sub-10 nm scale objects with a table-top source based on a small inexpensive femtosecond laser system.

Description: Core/shell heterostructured TiO 2 /CdS x Se 1-x nanowire arrays (NWAs) were prepared via physical vapor deposition of CdS x Se 1-x layer onto the hydrothermal pre-grown TiO 2 NWAs with FTO as conductive substrate. By change the sulfur content ( x ) in the TiO 2 /CdS x Se 1-x nano-composites, it was observed that the light absorption edge can be gradually tuned within a broad wavelength from 540 to 710 nm. When used as photoanodes for hydrogen generation, the as-prepared TiO 2 /CdS x Se 1-x NWAs show much higher photoelectroncatalytic activity than the pristine TiO 2 NWAs. Moreover, the TiO 2 /CdS x Se 1-x photoelectrode with x  = 0.52 exhibited the highest photocurrent level and outstanding stability, which is more suitable for long-time hydrogen generation. This study may be useful in the design of alloy hetrostructure photoelectrodes with optimal chemical composition toward the more efficient solar conversion devices.

Description: This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

Description: We investigate homeotropically aligned fluorophores and Förster resonance energy transfer (FRET) for luminescent solar concentrators using Monte-Carlo ray tracing. The homeotropic alignment strongly improves the trapping efficiency, while FRET circumvents the low absorption at homeotropic alignment by separating the absorption and emission processes. We predict that this design doped with two organic dye molecules can yield a 82.9% optical efficiency improvement compared to a single, arbitrarily oriented dye molecule. We also show that quantum dots are prime candidates for absorption/donor fluorophores due to their wide absorption band. The potentially strong re-absorption and low quantum yield of quantum dots is not a hindrance for this design.

Description: We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.

Description: The low Curie temperature ( T c  = 130 °C) of bulk BaTiO 3 greatly limits its applications. In this work, the phase structures of BaTiO 3 nanoparticles with sizes ranging from 2.5 nm to 10 nm were studied at various temperatures by using aberration-corrected transmission electron microscopy (TEM) equipped with an in-situ heating holder. The results implied that each BaTiO 3 nanoparticle was composed of different phases, and the ferroelectric ones were observed in the shells due to the complicated surface structure. The ferroelectric phases in BaTiO 3 nanoparticles remained at 600 °C, suggesting a significant increase of T c . Based on the in-situ TEM results and the data reported by others, temperature-size phase diagrams for BaTiO 3 particles and ceramics were proposed, showing that the phase transition became diffused and the T c obviously increased with decreasing size. The present work sheds light on the design and fabrication of advanced devices for high temperature applications.

Description: Gamma-ray imaging utilizing Compton scattering has traditionally relied on measuring coincident gamma-ray interactions to map directional information of the source distribution. This coincidence requirement makes it an inherently inefficient process. We present an approach to gamma-ray reconstruction from Compton scattering that requires only a single electron tracking detector, thus removing the coincidence requirement. From the Compton scattered electron momentum distribution, our algorithm analytically computes the incident photon's correlated direction and energy distributions. Because this method maps the source energy and location, it is useful in applications, where prior information about the source distribution is unknown. We demonstrate this method with electron tracks measured in a scientific Si charge coupled device. While this method was demonstrated with electron tracks in a Si-based detector, it is applicable to any detector that can measure electron direction and energy, or equivalently the electron momentum. For example, it can increase the sensitivity to obtain energy and direction in gas-based systems that suffer from limited efficiency.

Description: We study the magnetotransport properties of monolayer graphene grown on SiC substrates. At low magnetic fields, a parabolic magnetoresistance (MR) is observed. With increasing magnetic field, however, this parabolic MR is changed to a linear field dependence that does not show signs of saturation for magnetic fields up to 9 T. At a fixed field, the value of the linear MR decreases with increasing temperature, with its value as large as 80% under 9 T at room temperature. Furthermore, the Hall mobility is found to be suppressed when the sample is annealed at 390 K under a helium atmosphere, with this suppression causing a decrease of the observed linear MR. The decrease in the linear MR shows a linear dependence on Hall mobility, which is indicative of the application of the monolayer graphene. We attribute the observed linear MR to a classical origin owing to the close relation between the MR and Hall mobility.

Description: Surface condition before an insulator deposition is the key issue for the preparation of reliable GaAs-based metal-oxide-semiconductor (MOS) devices. This study presents the preparation and properties of InGaAs/GaAs MOS structures with a double-layer insulator consisting of an oxygen-plasma oxide covered by Al 2 O 3 . The structures were oxidized during 75 s and 150 s. Static measurements yielded a saturation drain current of ∼250 mA/mm at V G  = 1 V. Capacitance measurements showed improved performance in the depletion region compared with the structures without the double-layer insulator. Trapping effects were investigated by conductance vs. frequency measurements. The trap state density was in order of 10 11  cm −2 ·eV −1 with a continuous decrease with increased trap energy. The carrier mobility evaluation showed peak values of 3950 cm 2 /V·s for 75 s and 4570 cm 2 /V·s for 150 s oxidation times with the sheet charge density ≅2 × 10 12  cm −2 . The results demonstrate great potential of the procedure that was used to prepare the GaAs-based MOS devices with oxidized GaAs surface covered with an Al 2 O 3 insulator.

Description: A transmission-grating-sampled circular dichroism absorption spectroscopy (TGS-CDAS) and its theoretical model are developed sensitively to measure decay dynamics of a transient spin grating (TSG). A binary transmission grating with the same period as TSG is set behind TSG. It allows only a same small part of each period in TSG measured by circular dichroism absorption effect of a probe. In this way, the zero average of spin-dependent effects measured over a whole period in TSG is avoided so that TGS-CDAS has a high sensitivity to spin evolution in TSG. Spin transport experiments are performed on GaAs/AlGaAs quantum wells. Experimental results prove the feasibility and reliability of TGS-CDAS.

Description: Deep Level Transient Spectroscopy (DLTS) reveals three electrical levels of substitutional nickel in silicon at E C – 0.07 eV, E C – 0.45 eV, and E V  + 0.16 eV. A number of additional DLTS peaks are observed after hydrogenation of the samples. We identify different NiH x -complexes with x = 1, 2, and 3. NiH introduces a single acceptor and a single donor state at about E C – 0.17 eV and E V  + 0.49 eV into the band gap of silicon. NiH 2 and NiH 3 are shown to have a single acceptor state at E V  + 0.58 eV and E V  + 0.46 eV, respectively. In addition to the electrically active NiH x -complexes, a total passivation of the electrical activity of nickel by hydrogen is observed.

Description: A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (Δ V TH QM ) and the gate capacitance ( C g ) degradation. First of all, Δ V TH QM induced by quantum mechanical (QM) effects is modeled. The C g degradation is then modeled by introducing the inversion layer centroid. With Δ V TH QM and the C g degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

Description: Single phase polycrystalline BiFeO 3 thin films were grown on three different substrates via chemical solution deposition. Our results indicate that the band gap of as-prepared BiFeO 3 films can be tuned (2.02–2.67 eV) by the grain size effects caused by the substrates. These BiFeO 3 films show good photocatalytic properties by the degradation of Congo red solution under visible-light irradiation ( λ   〉 400 nm). Additionally, weak ferromagnetic behaviors can be observed at room temperature in all the films, which should be correlated to the destruction of the incommensurate cycloid spin structure of BiFeO 3 phase and the coexistence of Fe 3+ and Fe 2+ as confirmed by X-ray photoelectron spectroscopy.

Description: Recently, interest in alnico magnetic alloys has been rekindled due to their potential to substitute for rare-earth based permanent magnets provided modest improvements in their coercivity can be achieved without loss of saturation magnetization. Recent experimental studies have indicated that atomic and magnetic structure of the two phases (one AlNi-based, the other FeCo-based) that comprise these spinodally decomposed alloy is not as simple as previously thought. A key issue that arises is the distribution of Fe, Co, and Ti within the AlNi-based matrix phase. In this paper, we report the results of first-principles calculations of the site preference of ternary alloying additions in DO 3 Fe 3 Al, Co 3 Al, and Ni 3 Al alloys, as models for the aluminide phase. For compound compositions that are Al rich, which correspond to experimental situation, Ti and Fe are found to occupy the α sites, while Co and Ni prefer the γ sites of the DO 3 lattice. An important finding is that the magnetic moments of transition metals in Fe 3 Al and Co 3 Al are ordered ferromagnetically, whereas the Ni 3 Al were found to be nonmagnetic unless the Fe or Co is added as a ternary element.

Description: We observed changes of the transmitted monochromatic light passing through a colloidal PbS quantum dot film on glass owing to an applied moderate (smaller than 1 T) magnetic field under ambient conditions. The observed alterations show a square dependence on the magnetic field increase that cannot be achieved with bulk semiconductors. The findings point to so far not recognized application potentials of quantum dots.

Description: We report a method of fabricating ultra-clean and hysteresis-free multiwall carbon nanotube field-effect transistors (CNFETs) inside the ultra-high vacuum transmission electron microscope equipped with a movable gold tip as a local gate. By tailoring the shell structure of the nanotube and varying the drain-source voltage (V ds ), we can tune the electronic characteristic of a multiwall CNFET in situ . We have also found that the Schottky barriers of a multiwall CNFET are generated within the nanotube, but not at the nanotube/electrode contacts, and the barrier height has been derived. We have subsequently demonstrated the ambipolar characteristics of the CNFET with concurrent high-resolution imaging and local gating.

Description: Spin injection into solid-state devices is commonly performed by use of ferromagnetic metal electrodes. Here, we present a spin injector design without permanent magnet; rather, the spin selectivity is determined by a chiral tunneling barrier. The chiral tunneling barrier is composed of an ultrathin Al 2 O 3 layer that is deposited on top of a chiral self-assembled monolayer (SAM), which consists of cysteine or oligopeptide molecules. The experimentally observed magnetoresistance can be up to 20% at room temperature, and it displays an uncommon asymmetric curve as a function of the applied magnetic field. These findings show that the spin injector transmits only one spin orientation, independent of external magnetic field. The sign of the magnetoresistance depends on the handedness of the molecules in the SAM, which act as a spin filter, and the magnitude of the magnetoresistance depends only weakly on temperature.

Description: Metamaterial waveguides based on a concept to generate highly controllable negative-permittivity or permeability bands in the transmission-line (TL) metamaterials are proposed. In this concept, periodic alternation of input impedance of a TL segment (such as with open- or short-circuited end), which can be used to generate multiple negative-permittivity or permeability bands periodically in a frequency domain, is changed by an additional admittance attached at a specific point of the segment. Such segment with the admittance gives a possibility to effectively control separation between two negative-permittivity or permeability bands and the bandwidth, which were originally determined by the periodic alternation of input impedance of the segment. This approach leads to much broader applications of metamaterials such as in multiband wireless communication systems. Enlargement or contraction of band separation and enhancement of bandwidth on negative permittivity bands are experimentally demonstrated in two-dimensional isotropic waveguides at microwave frequencies.

Description: We investigate the incorporation of gold nanoparticles (Au NPs) into poly(3,4-ethylenedioxythiophene)/polystyrenesulfonate for organic/Si heterojunction hybrid solar cells. The incorporation of Au NPs can enhance the short-circuit current density (J sc ), consequently, leading to a higher power conversion efficiency (PCE). The hybrid devices incorporating Au NPs with optimized size achieve a PCE of over 12.9% with about 10% enhancement of the J sc compared with that of reference ones. Au NPs with different sizes are incorporated to explore the mechanism for the enhanced device performance. According to the detailed experimental characterization and numerical simulation results, the increased PCE is attributed to the light scattering and the local electromagnetic field enhancement, which is originated from the excitation of the localized surface plasmon resonance of Au NPs.

Description: Light reflection at the boundary of two different media is one of the fundamental phenomena in optics, and reduction of reflection is highly desirable in many optical systems. Traditionally, optical antireflection has been accomplished using single- or multiple-layer dielectric films and graded index surface structures in various wavelength ranges. However, these approaches either impose strict requirements on the refractive index matching and film thickness, or involve complicated fabrication processes and non-planar surfaces that are challenging for device integration. Here, we demonstrate an antireflection coating strategy, both experimentally and numerically, by using metasurfaces with designer optical properties in the mid-wave infrared. Our results show that the metasurface antireflection is capable of eliminating reflection and enhancing transmission over a broad spectral band and a wide incidence angle range. The demonstrated antireflection technique has no requirement on the choice of materials and is scalable to other wavelengths.