Publication Date:
2014-12-18
Description:
We demonstrate chemical doping of a topological insulator Bi 2 Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2 Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2 Se 3 , a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics