Publication Date:
2014-12-18
Description:
We report on the controlled removal of an amorphous Se capping layer from Bi 2 Te 3 and Bi 2 Se 3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi 2 Te 3 . Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi 2 Te 3 lattice down to ∼7 nm from its top surface while remaining iso-structural.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics