Publication Date:
2020
Description:
〈p〉Publication date: March 2020〈/p〉
〈p〉〈b〉Source:〈/b〉 Solid-State Electronics, Volume 165〈/p〉
〈p〉Author(s): Yuhang Zhao, Guangdi Feng, Jie Jiang〈/p〉
〈div xml:lang="en"〉
〈h5〉Abstract〈/h5〉
〈div〉〈p〉The hardware implementation of biological synapses is very necessary for a new brain-like neuromorphic computation system. In recent years, optoelectronic synaptic devices have become the application platform for next generation neuromorphic system and artificial neural network. Here, a new kind of photoelectronic synaptic transistors are proposed using the Al-Zn-O (AZO) as coplanar gate and the laterally-coupled poly (vinyl alcohol) (PVA) electrolyte membrane as neurotransmitter. The key synaptic functions such as excitatory postsynaptic current (EPSC) and paired-pulse-facilitation (PPF) were successfully emulated. More importantly, by exposing an ultraviolet (UV) laser, the transformation of short-term memory (STM) to long-term memory (LTM) can be mimicked in our neuromorphic devices. Furthermore, an energy-band diagram is finally proposed for a better understanding of the underlying mechanism of LTM behavior. These results represent an important step toward the next-generation neural networks enabled by photo-electric hybrid nano-electronics, and point to the potential of more sophisticated neuromorphic computations.〈/p〉〈/div〉
〈/div〉
Print ISSN:
0038-1101
Electronic ISSN:
1879-2405
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
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