Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1714-1716
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98553
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