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  • 1990-1994  (166)
  • 1925-1929  (2)
  • 1880-1889
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  • 1
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    In:  Bijdragen tot de dierkunde vol. 10 no. 1, pp. 1-10
    Publikationsdatum: 2024-01-12
    Beschreibung: The collection of Hydroidea obtained by this Expedition, was forwarded to me for examination in the summer of 1882, by Dr. MAX WEBER, of Amsterdam. I have found no new species in it, \xe2\x80\x94 a natural result of the number of Scandinavian and Arctic Hydroids that have been made known to us in late years, by MM. M. and G. O. SARS, ALLMAN, HINCKS, METSCHNIKOFF and others. But the present collection contains several species hitherto rare, it extends greatly the range of many that have formerly been reported from only one or two localities, and it contains also several well marked and peculiar varieties. It includes altogether 24 species from 12 stations, from various depths down to 170 fathoms. The annexed table gives the names of the species with the stations and depths at which they were found.\nThe most prominent and luxuriant species are Sertularia gigantea, and Lafo\xc3\xaba fruticosa; \xe2\x80\x94 of which the former is common everywhere in shallow, the latter in deep water; most of the species are large and strong in comparison with specimens from farther south.
    Repository-Name: National Museum of Natural History, Netherlands
    Materialart: info:eu-repo/semantics/article
    Format: application/pdf
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4032-4039 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InAsyP1−y epilayers were deposited by gas-source molecular beam epitaxy onto (100) InP, systematically varying the As fraction from 0.15 to 0.75, corresponding to a lattice mismatch of 0.5%–2.4%. Thin (≈190 A(ring)), largely strained InAsyP1−y films exhibit a smooth, planar morphology and good photoluminescence characteristics even for strains exceeding 2%. In thicker films, depending on the growth parameters, capacitance-voltage depth profiling indicates a strain and thickness dependent formation of electrically active defects that results in a net ionized donor concentration with a peak value as high as 2×1019 cm−3 after about 500 A(ring) of growth. Corresponding photoluminescence measurements suggest that these defects are associated with a shallow level about 10 meV below the conduction band edge of the InAsyP1−y. As the thickness further increases, the net residual donor concentration reduces to 〈3×1015 cm−3 near the top surface of 1.2-μm-thick epilayers with y≤0.6.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 199-206 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by nitrogen and boron ion irradiations at 300 K, and by helium ion bombardment at 80, 300, and 523 K has been investigated as function of ion dose (1×1012–1×1016 cm−2) and subsequent anneal temperature (70–650 °C) by sheet resistance and Hall effect measurements. The dose dependence of the sheet resistance shows two regions for all cases considered: (I) for lower doses in which the sheet resistance (resistivity) increases up to a maximum of about 6×106 Ω/(D'Alembertian) (180 Ω cm), and (II) for higher doses in which the sheet resistance decreases with dose. Temperature dependent Hall measurements for materials in region (I) show thermally activated carrier densities with activation energies between 0.21 and 0.29 eV. The temperature dependence of the sheet resistance in region (II), on the other hand, is consistent with the assumption of a hopping conductivity. Varying the substrate temperature during the irradiations yields no measurable effects for samples implanted in region (I). For the case of He+ bombardments at 523 K, higher sheet resistances are obtained in region (II) as compared to samples irradiated at lower temperatures. For the case of He+ at 80 K and N+ at 300 K a third region (III) is observed for doses higher than 7 and 2×1014 cm−2, respectively, in which a renewed increase in the sheet resistance with increasing dose is detected. Rutherford backscattering-channeling results suggest that this behavior is related to the creation of an amorphouslike region in the InGaAsP layer. Annealing of samples amorphized by He+ at 80 K yields higher resistivities (up to a factor of 6×105 relative to that of the unimplanted material), and improved stability of the high resistivity as compared to the other implantation schedules investigated.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2296-2299 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Studies of photogeneration of charge in polysilanes resulting from multiple pulse excitation in thermally stimulated current (TSC) measurements are reported. The amount of charge that was photogenerated at 80 K and collected during the heating of the sample up to 300 K, ranged from 1×10−9 to 4×10−8 C/cm2 for electric fields of 10–30 V/μm and illumination energy up to 2.5 mJ/cm2 and was found to be dependent both on the electric fields applied during illumination and thermal ramping and on the illumination energy. The results are compared to an idealized model that qualitatively describes for photogeneration of the charge at 80 K and its collection during the TSC measurement. According to this model, multiple pulse excitation at 80 K leads to a buildup of photogenerated charge density in the surface region of the sample and as the temperature is increased, electron-hole recombination occurs, limiting the amount of charge collected by the external circuit.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2220-2221 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer–Cottrell lock array in a Si/Si1−xGex/Si heterostructure (0.4〈x〈0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2126-2128 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by helium ion bombardment at 300 and 80 K has been investigated as a function of ion dose (1×1012–1×1016 cm−2) and subsequent annealing temperature (70–650 °C) by sheet resistance and Hall effect measurements as a function of temperature. Irradiations at 300 K are found to induce an increase in the resistivity by a factor of up to 3×105 relative to that of the unimplanted material. Materials bombarded at 80 K with doses higher than 7×1014 cm−2 exhibit a further increase in the sheet resistance and higher stability upon subsequent annealing. Rutherford backscattering channeling results suggest that this behavior is related to the creation of a highly polycrystalline or amorphous region in the InGaAsP layer which occurs for irradiations performed at 80 K, but not at 300 K.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3194-3196 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The strain relaxation of InAsyP1−y layers grown on (001) InP substrates by gas-source molecular beam epitaxy was examined using transmission electron microscopy (TEM) and cathodoluminescence (CL) imaging. InAsyP1−y films with a thickness of 190 A(ring) were prepared, systematically varying the As content from y=0.30 and 0.77, corresponding to a lattice mismatch between 0.97% and 2.5%. Relaxation was anisotropic, with 60° misfit dislocations lying predominantly along [11¯0], with a much lower density of dislocations along [110]. For y(approximately-greater-than)0.48, CL and plan-view TEM observations show slip traces which make angles of about ±40° with the [11¯0] direction. These slip traces correspond to pure-screw dislocation segments (gliding on {111}) cross slipping to glide on planes approximately parallel to {011}.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1239-1241 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of strain on F+ and Si+ implantation-induced compositional disordering in InGaAsP strained layer multiple-quantum-well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation-enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 713 (1994), S. 0 
    ISSN: 1749-6632
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Allgemeine Naturwissenschaft
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Pharmacology 30 (1990), S. 1-45 
    ISSN: 0362-1642
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Medizin , Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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