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  • 1
    Electronic Resource
    Electronic Resource
    Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 695-698 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We have performed a combined investigation of experiment and theory on the infraredreflectance from cubic SiC grown on Si by chemical vapor deposition. A damping behavior of theinterference fringes away from the reststrahlen band and a dip or notch within the “flat top” areobserved from some samples while they does not occur in high quality 3C-SiC/Si samples. Theformer is interpreted due to an interfacial transition layer existed between SiC-Si and a rough surface,while the latter can be demonstrated by a three-component effective medium model
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.695.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Photocatalytic Degradation of NO〈sub〉2〈/sub〉〈sup〉-〈/sup〉 by Fe〈sup〉3+〈/sup〉-Doped TiO〈sub〉2〈/sub〉 Nano Particles Prepared by Sol-Gel Method (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 544-545 (May 2007), p. 111-114 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The preparation and the photocatalytic degradation NO2- activity of Fe3+-dopedTiO2 nano-sized particles is reported in this paper. The TiO2 nano particles were prepared bysol-gel method. The various influence factors about the synthesis process of the Fe3+-dopedTiO2 nano photocatalyst were controlled and investigated by XRD (X-ray diffraction), SEM(scanning electron microscopy), and TEM (transmission electron microscopy) etc.. The resultsshow that the phase compositions, crystalline grain size, crystal structure , and photocatalyticactivity of the Fe3+-doped TiO2 particles prepared by the method depend on the synthesistechnology parameters such as calcination temperature, holding time, Fe3+ ions concentrationetc.. The influence factors of the preparation process has been discussed. The photocatalyticdecomposition of NO2- ion into N2 and O2 using Fe3+ and Ce4+-doped TiO2 photocatalystswere investigated under UV irradiation. It was fund that Fe3+-doped TiO2 photocatalysts showsmuch higher photocatalytic activity than that of the Ce4+-doped TiO2 . The photocatalyticdecomposition effect of NO2- ion is related to the crystalline grain size, irradiation time, andthe Fe3+ ions concentration. The Fe3+-doped TiO2 nano powders exhibited the photocatalyticdegradation NO2- activity under UV light irradiation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.544-545.111.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    LOW DIELECTRIC CONSTANT MATERIALS FOR ULSI INTERCONNECTS (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 645-680 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract As integrated circuit (IC) dimensions continue to decrease, RC delay, crosstalk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. In this review, the general requirements for process integration and material properties of low-k dielectrics are first discussed. The discussion is focused on the challenge in developing materials with low dielectric constant but strong thermomechanical properties. This is followed by a description of the material characterization techniques, including several recently developed for porous materials. Finally, the material characteristics of candidate low-k dielectrics will be discussed to illustrate their structure-property relations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.645
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental study of implantation-induced disordering in InGaAsP strained multiple-quantum-well heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1239-1241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain on F+ and Si+ implantation-induced compositional disordering in InGaAsP strained layer multiple-quantum-well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation-enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112082
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  • 5
    Electronic Resource
    Electronic Resource
    On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3029-3038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bending beam technique has been developed for on-wafer characterization of thermomechanical properties of dielectric thin films including Young's modulus (E), the coefficient of thermal expansion (CTE), and the Poisson ratio (ν). The biaxial modulus E/(1−ν) and CTE were determined by measuring the thermal stresses of the dielectric film as a function of temperature on two different substrates. The Poisson ratio and Young's modulus were determined by measuring the temperature dependence of the thermal stress of periodic line structures of the dielectric film. Three dielectric thin films were selected for this study, consisting of silica made from tetraethylorthosilane (TEOS), hydrogen silsesquioxane (HSQ), and biphenyltetracarboxylic dianhydride-p-phenylene diamine (BPDA-PDA). The deduced biaxial modulus and CTE are 77 GPa and 1.0 ppm/°C for TEOS, 7.07 GPa and 20.5 ppm/°C for HSQ, and 11.1 GPa and 3.4 ppm/°C for BPDA-PDA. The Poisson ratio is determined to be 0.24 and Young's modulus is 59 GPa for the TEOS film. The error limit and the valid range of E/(1−ν) and CTE for applying this technique are also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287771
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  • 6
    Electronic Resource
    Electronic Resource
    Simultaneous measurement of Young's modulus, Poisson ratio, and coefficient of thermal expansion of thin films on substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1575-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of measuring the Yong's modulus, Poisson ratio, and coefficient of thermal expansion (CTE) is presented. The method uses a wafer curvature technique to measure thermal stresses of thin films of the same material deposited on two different substrates, one isotropic and the other thermomechanically anisotropic. By analyzing the thermal stress data as a function of temperature, the Young's modulus, Poisson ratio and CTE can be simultaneously determined. The method is demonstrated for Al (0.5 wt % Cu) and Cu thin films by performing measurements on (100) Si wafers and Y-cut single-crystal quartz wafers. The CTE, Young's modulus, and Poisson ratio are found to be 24.3 ppm/°C, 58.9 GPa, and 0.342, respectively, for Al (Cu) thin film, and 17.7 ppm/°C, 104.2 GPa, and 0.352, respectively, for Cu thin film. They are in good agreement with those measured by other methods. This method is generally applicable to other on-wafer films with in-plane isotropy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372054
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6421-6424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bending beam method has been developed to measure the elastic modulus E, the coefficient of thermal expansion (CTE) and the Poisson ratio ν for on-wafer dielectric films with thicknesses in the submicron range. The method was demonstrated for 0.5 μm thick silicon dioxide films made from tetraethylorthosilane (TEOS). First, the biaxial elastic modulus E/(1-ν) and CTE were measured on blanket TEOS on Si and GaAs substrates and found to be 77 GPa and 1.0 ppm/°C, respectively. The Poisson ratio ν was determined by combining the finite element calculation and the experimental result of the thermal stresses of TEOS fine lines on the Si substrate. The Poisson ratio of TEOS was determined to be 0.24 and, as a consequence, the Young's modulus was 59 GPa. Fourier transform infrared spectra were obtained for TEOS films on the Si and GaAs substrates to ensure that the chemical structure of the film is independent of the substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370146
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  • 8
    Electronic Resource
    Electronic Resource
    Thermomechanical properties and moisture uptake characteristics of hydrogen silsesquioxane submicron films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 944-946 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes measurement of the biaxial modulus, coefficient of thermal expansion (CTE), and moisture uptake characteristics of hydrogen silsesquioxane (HSQ) thin films. The biaxial modulus and CTE were determined using a bending beam method, and moisture uptake was studied using a quartz crystal microbalance method. The biaxial modulus and CTE of a 0.5 μm HSQ film were measured on Si and Ge substrates and found to be 7.07 GPa and 20.5 ppm/°C, respectively. The value determined for the diffusion constant of water in a 0.7-μm-thick HSQ films is 3.61×10−10 cm2/s at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123417
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stress and glass transition of ultrathin polystyrene films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2843-2845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stress of thin and ultrathin polystyrene (PS) films on Si substrate has been studied and the glass transition temperature (Tg) is determined from the thermal stress data. Tg of PS turned out to be thickness independent for thick films but decreases when the film thickness is comparable to the end-to-end distance of the polymer chains (〈100 nm). The thermal stress level and the slope of the stress temperature curve of the film also decrease as the film thickness decreases. The slope reduction indicates that the product of the biaxial modulus E/(1−ν) and the coefficient of thermal expansion (CTE) of the film decreases with film thickness. Assuming that the CTE increases for ultrathin films, the modulus is found to decrease significantly with respect to the bulk value. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322049
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  • 10
    Electronic Resource
    Electronic Resource
    A microstructural investigation of 52100 steel by N^+ implantation and recoil implantation
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 39 (1989), S. 563-566 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(89)90848-3
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