ISSN:
1573-482X
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Maschinenbau
Notizen:
Abstract Reverse anneal phenomenon was observed in high current arsenic-implanted silicon samples and was pronounced with increasing implantation current. Noise measurements were used to study this phenomenon, the noise spectrum was composed of 1/f noise and generation-recombination (g-r) noise. The Hooge parameter α, usually a constant for the 1/f noise in homogeneous samples, was found to be a function of annealing temperature and the measured g-r noise values which may reflect the activation percentage of implanted atoms under different annealing temperatures were in good agreement with theoretical predictions.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00702928
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