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  • 1995-1999  (319)
  • 1965-1969  (116)
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  • 1
    Monograph available for loan
    Monograph available for loan
    Elasticity and geomechanics (1996)
    Cambridge [u.a.] : Cambridge Univ. Press
    Details Availability
    Call number: M 98.0250
    Type of Medium: Monograph available for loan
    Pages: xi, 201 S.
    ISBN: 0521498279
    Classification:
    Petrophysics
    Language: English
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    facet.materialart.
    Unknown
    The intermediate depth circulation of the western South Atlantic (1999)
    In:  EPIC3Geophysical research letters, 26, pp. 3329-3332
    Details
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
    Electronic Resource
    Electronic Resource
    MATHEMATICS—ANNUAL REVIEW (1967)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 59 (1967), S. 71-76 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50686a010
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  • 4
    Electronic Resource
    Electronic Resource
    Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001¯), and (11¯00) 2H–AlN/6H–SiC interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371391
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  • 5
    Electronic Resource
    Electronic Resource
    Reaction of dirhenium decacarbonyl with dinitrogen tetroxide. Nitratopentacarbonylrhenium(I) (1967)
    s.l. : American Chemical Society
    Inorganic chemistry 6 (1967), S. 1926-1927 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50056a040
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  • 6
    Electronic Resource
    Electronic Resource
    Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5238-5242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of arrays of silicon-doped GaN (Si:GaN) pyramids for field emitter applications has been achieved. The electron emission characteristics of these arrays has been measured using techniques such as field emission, field emission energy distribution analysis (FEED), photoemission electron microscopy (PEEM), and field emission electron microscopy (FEEM). The field emission current–voltage (I–V) results indicate an average threshold field as low as 7 V/μm for an emission current of 10 nA. It is suggested that the low threshold field value is a consequence of both the low work function of Si:GaN and the field enhancement of the pyramids. The results of the FEEM and FEED measurements indicate agreement with the field emission I–V characteristics. The FEED results indicate that the Si:GaN pyramids are conducting, and that no significant ohmic losses are present between the top contact to the array and the field emitting pyramids. The PEEM and FEEM images show that the emission from the arrays is uniform over a 150 μm field of view. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368775
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  • 7
    Electronic Resource
    Electronic Resource
    Cleaning of AlN and GaN surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5248-5260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures 〉850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368814
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  • 8
    Electronic Resource
    Electronic Resource
    Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368355
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  • 9
    Electronic Resource
    Electronic Resource
    Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 469-475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive study of the sub band-edge emission bands of AlxGa1−xN (0.06≤x≤1) thin films deposited on vicinal and on-axis 6H–SiC(0001) substrates is presented. At 4.2 K strong band-edge emission, ascribed to donor-bound excitons, shallow donor-shallow-acceptor pair emission, and a deep emission band associated with the "yellow" band of GaN, were observed via cathodoluminescence. The energy shift of the shallow donor-shallow-acceptor pair band with respect to the peak of the donor-bound excitons peak exhibited a less than one-to-one correspondence with increasing Al mole fraction due the increasing localization of either the shallow donor and/or shallow acceptor. The yellow band was observed for all compositions and exhibited a similar energy shift with respect to both the donor-bound excitons and the shallow donor-shallow-acceptor pair bands as the Al mole fraction increased, except for a brief decrease at x(approximate)0.5. This decrease was attributed to a donor oxygen level which entered the band gap at approximately this composition. A strong, broad emission band observed at 3.25 eV at 295 K in AlN and commonly associated with oxygen impurities was shown to be closely related to the yellow band of GaN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366716
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray photoelectron diffraction from (3×3) and ((square root of)3×(square root of)3)R 30° (0001)Si 6H–SiC surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368879
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