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  • 1
    Electronic Resource
    Electronic Resource
    Temperature-dependent transport properties of n+ GaAs/low-temperature GaAs/n+ GaAs structures grown by molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8488-8492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature-dependent I–V characteristics of n+ GaAs low-temperature GaAs(AlGaAs) n+ GaAs structures in which the low-temperature layers were grown at 250, 350, and 450 °C were analyzed. Band conduction with an activation energy of 0.72 eV dominates at T(approximately-greater-than)250 K. Hopping conduction dominates at T〈250 K, where the resistivity was found to be insensitive to temperature. From this analysis, it is shown that Fermi level is pinned to an acceptorlike deep level of about 1017 cm−3, which lies at 0.72 eV below the conduction band. Measured capacitance can be described in terms of a parallel-plate capacitance with separation being equal to the expected growth thickness. Majority traps (electrons) were observed by deep-level transient spectroscopy with an activation energy about 0.72 eV, confirming the result of the resistivity analysis. In addition, the I–V characteristics were fitted to the simulated curves based on a simplified space-charge limited theory and the result was found to be consistent with the resistivity analysis. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362525
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and structural properties of spontaneously formed long-range compositional modulation in (111)A and (111)B AlGaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8669-8674 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the spontaneously formed long-range Al-rich and Ga-rich AlxGa1−xAs/AlyGa1−yAs superlattices in both (111)A and (111)B AlGaAs during epitaxial growth. The spontaneously formed compositional modulation has been investigated by cross-sectional transmission electron microscopy in AlxGa1−xAs (x=0.3–0.4) grown on (111)A and (111)B GaAs substrates at 600–700 °C. In contrast, similar superstructures are not observed in layers simultaneously grown on (100) substrates. The observed structural compositional modulation is closely related to the large peak energy redshift and peak intensity enhancement in 15 K photoluminescence (PL) of samples grown on both (111)A and (111)B orientations to those on (100). The respective redshifts of PL peak energy for (111)A and (111)B Al0.27Ga0.73As to that of (100) are 137 and 45 meV, while the PL integrated intensity enhancement to (100) amounts to 200 and 2000 times, respectively. The effect of compositional modulation is reduced with the increasing growth temperatures as shown in the considerably less compositionally modulated (111)A and (111)B Al0.40Ga0.60As grown at 700 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362492
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  • 3
    Electronic Resource
    Electronic Resource
    Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104458
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 443-445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of InGaAs/GaAs multiple quantum wells (MQWs) on (111)A GaAs. Uniform thickness of (111)A quantum wells is observed by the cross-sectional transmission electron microscopy (TEM). Growth induced long-range In- and Ga-rich InxGa1−xAs/InyGa1−yAs superlattice in (111)A is also observed by cross-sectional TEM in the ternary InGaAs wells. In contrast, none of the above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. However, the photoluminescence (PL) linewidth is broadened by such compositional modulation. Low-temperature (15 K) photoluminescence showed a broad PL linewidth of 27.5 meV for In0.16Ga0.84As/GaAs MQWs grown on (111)A substrates at 520 °C. A decreased PL linewidth of 15.7 meV and a reduced compositional modulation in InGaAs wells can be achieved at a higher growth temperature of 560 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118133
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial GaAs optical detectors on silica fibers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1768-1770 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99620
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  • 6
    Electronic Resource
    Electronic Resource
    Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1164-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60–100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5–10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98720
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of GaAs on SiOx by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1416-1419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6–0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950 °C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339855
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  • 8
    Electronic Resource
    Electronic Resource
    Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the first CBE growth of InP using bisphosphinoethane as a group V source. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns were observed. Room temperature and 77 K Hall mobilities for a 2.0 μm thick InP epitaxial layer were 4200 and 22 000 cm2/V s, with carrier densities of 5.7×1015 and 4.0×1015 cm−3, respectively. Although a high n-type impurity concentration is observed at the epitaxial layer-substrate interface, the epitaxial layer background impurity concentration is low enough for device fabrication. The full width at half maximum linewidth of the dominant donor bound exciton is 0.84 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108491
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: State-of-the-art quality Al0.3Ga0.7As was achieved on both (111)B and (100) GaAs by molecular beam epitaxy. Low-temperature photoluminescence linewidths of 2.9 and 2.4 meV were obtained for (111)B and (100) Al0.3Ga0.7As, grown at 650 and 700 °C, respectively, with nearly equivalent integrated luminescence intensity. This is the narrowest linewidth ever reported for (111) AlGaAs. The low growth temperature and high material quality of (111)B Al0.3Ga0.7As is expected to be an important factor to the future development of both electronic and optical heterostructure devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106409
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  • 10
    Electronic Resource
    Electronic Resource
    Spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice and strong enhancement of optical properties (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1921-1923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 A(ring) Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112817
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