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  • 1
    Electronic Resource
    Electronic Resource
    Raman spectroscopic studies of proton-exchanged LiNbO3 crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1953-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of LiNbO3 crystals with different proton-exchange time were examined. E(TO) and A1(TO) modes appear in the A1- and E-symmetry spectra, respectively, and their intensities show a dependence on exchange time. We attribute these results to both the internal strains resulting from order-disorder distribution of protons in the sample and the enhanced photorefractive effect. In addition, in the E-symmetry spectra the softening of A1(TO) mode at 630 cm−1 was found about 4%. The phenomenon arises from the existence of ferroelectric and paraelectric phases in the protonated sample at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360166
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of ion irradiation damage on properties of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1320-1323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 μm features were formed by selective ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361028
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of fibrinogen adsorption from solutions flowing through polymer hollow fibers (1991)
    s.l. : American Chemical Society
    Langmuir 7 (1991), S. 2230-2235 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00058a042
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  • 4
    Electronic Resource
    Electronic Resource
    SrBi4Ti4O15 thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3160-3164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline ferroelectric SrBi4Ti4O15 thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. Structures of the films were analyzed by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy. At an applied field of 275 kV/cm, the films showed good hysteresis loops with remnant polarization (Pr), saturated polarization (Ps) and coercive field (Ec) of 3.11 μC/cm2, 7.81 μC/cm2 and 68 kV/cm, respectively. At 120 kV/cm switching pulse field, fatigue tests were carried out systematically by varying the switching pulsewidth with a fixed duty cycle and with a fixed switching period, respectively. A gradual increase followed by an abrupt increase of the fatigue rate was observed with the increase of the switching pulsewidth. Field-induced defect diffusion was used to explain the results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435414
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  • 5
    Electronic Resource
    Electronic Resource
    Internal friction and Young's modulus of SrBi2Ta2O9 ceramics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1453-1457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal friction (IF) and the Young's modulus of SrBi2Ta2O9 (SBT) ceramics were measured by using the reed vibration method in the temperature range from 100 to 600 K with kilo-hertz frequencies. A high IF peak associated with a modulus defect appeared around 500 K, which was assumed to be due to the migration of oxygen vacancies with the activation energy U of about 0.95 eV. The mechanism of the IF peak was discussed in detail. At 570 K, an IF peak due to the viscous motion of domain walls near the Curie temperature was found. Below room temperature, a low IF peak with a modulus defect was found with peak temperature of 200–250 K, which varied for tens of degrees in different samples. This peak was due to the depinning process of 90° domain walls from oxygen vacancies. These results can be helpful in explaining the excellent fatigue resistance property of SBT thin films at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372034
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of C60 molecules embedded in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of C60 molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60 molecules and other peaks at 620 and 630 nm caused by imperfect C60 molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60 is induced by C60 adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60 molecules is caused by the coupled C60 molecules. At room temperature, the PL intensity of C60 embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60 is considered to be responsible for the PL enhancement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115250
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  • 7
    Electronic Resource
    Electronic Resource
    Single-crystalline, single-domain epitaxy of PbTiO3 thin films by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3503-3505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline and single-domain PbTiO3 films with thickness of 3000 A(ring) have been prepared by metalorganic chemical vapor deposition (MOCVD), using metalorganic precursors of tetra-ethyl-lead and iso-propoxide titanium. The nature of single-crystalline epitaxy and single domain of as-grown films was characterized by x-ray diffraction (XRD), synchrotron radiation (SR), and Rutherford backscattering (RBS). Using atomic force microscopy (AFM), the evidence of layer-by-layer growth was observed. The growth steps on the surface may be attributable to the formation of single-crystalline and single-domain PbTiO3 film with 3000-A(ring) thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115261
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  • 8
    Electronic Resource
    Electronic Resource
    The dielectric properties of polycrystalline C60 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3446-3448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties (1–50 kHz) of polycrystalline C60 have been carefully studied from 70 to 300 K. Below 170 K, the ac conductance σ(T) is proportional to the temperature, which is thought to be due to the phonon-assisted jump of electrons between localized states around the Fermi level. A significant change of the slope of the capacitance versus temperature curve occurs at 85 K, which can be attributed to the glass transition. It is confirmed that electric dipoles may be induced by orientational defects in C60 crystal. The capacitance drop around 256 K is found to originate from the disappearance of the orientational defects above the order–disorder phase-transition temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121661
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  • 9
    Electronic Resource
    Electronic Resource
    Raman scattering of porous structure formed on C+-implanted silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2091-2093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of the porous structure with intense blue emission formed on C+-implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half-maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β-SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β-SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115594
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  • 10
    Electronic Resource
    Electronic Resource
    High-frequency resonance in acoustic superlattice of periodically poledLiTaO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 592-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electric poling method has been used to prepare microstructured LiTaO3 crystals with periodically inverted-ferroelectric domains. By using these crystals as acoustic superlattices, both an "in-line" scheme and a "cross-field" scheme for acoustic excitation have been realized. The experimental results are in good agreement with the theoretical analysis. It is expected that these results may be applied to a bulk-acoustic device operating at a frequency high above 450 MHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118284
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