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  • 11
    Electronic Resource
    Electronic Resource
    Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δ (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle-induced depression of the superconducting critical temperature Tc of YBa2Cu3O7−δ is shown to be directly proportional, over seven orders of magnitude, to the nonionizing energy deposited in the lattice by primary knock-on atoms displaced by incident electrons, protons, and heavy ions. It is concluded that ΔTc is proportional only to the average number of defects produced and can therefore be predicted for any particle, energy, and fluence from a calculation of the nonionizing energy loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102287
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  • 12
    Electronic Resource
    Electronic Resource
    Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5412-5421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work summarizes results of a simple procedure to incorporate dopants into the near surface region of single-crystal sapphire. We demonstrate the formation of iron-doped and chromium-doped sapphire thin films by solid-phase epitaxial growth. Amorphous alumina films of about 200–350 nm thickness were deposited onto single-crystal sapphire substrates. Fe or Cr ions were introduced into the films during deposition. A post-deposition thermal process was performed in oxidizing ambients at 800–1400 °C to induce epitaxial growth and to incorporate dopants. The epitaxial relationship of the grown film with the substrate was confirmed by both ion channeling and cross-sectional transmission electron microscopy. The growth kinetics were determined by time-resolved reflectivity measurements for different dopant concentrations. Ion channeling angular scans revealed that the Fe or Cr ions are incorporated onto octahedral sites (Al3+ sites) in the corundum structure as expected in equilibrium. External optical transmittance measurements exhibited absorption in the near ultraviolet range associated with the Fe3+ state. The substitution of Cr for Al3+ was also confirmed by the observation of R1 and R2 luminescence lines characteristic of ruby. The doping procedure has potential applications in the fabrication of thin film planar optical waveguides and thin film stress sensors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359722
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  • 13
    Electronic Resource
    Electronic Resource
    Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352843
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  • 14
    Electronic Resource
    Electronic Resource
    Preparation of diamondlike carbon films by high-intensity pulsed-ion-beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5949-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) films were prepared by high-intensity pulsed-ion-beam ablation of graphite targets. A 350 keV, 35 kA, 400 ns beam, consisting primarily of hydrogen, carbon, and oxygen ions was focused onto a graphite target at a fluence of 15–45 J/cm2. Amorphous carbon films were deposited at up to 30 nm per pulse, corresponding to an instantaneous deposition rate greater than 1 mm/s. Electrical resistivities were between 1 and 1000 Ω cm. Raman spectra indicate that diamondlike carbon is present in most of the films. Electron-energy-loss spectroscopy indicates significant amounts of sp3-bonded carbon, consistent with the presence of DLC. Scanning electron microscopy showed most films contain 100 nm features, but micron size particles were deposited as well. Initial tests revealed favorable electron field-emission behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358373
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  • 15
    Electronic Resource
    Electronic Resource
    Formation of YBa2Cu3O7 superconducting films by ion implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1729-1731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated superconducting thin films by ion implanting Y into a base material formed by the coevaporation of BaF2 and Cu. The implantations were carried out at 77 K and resulted in the formation of an amorphous Y-Ba-Cu-F surface layer. Oxygen annealing with the addition of water vapor renders the base material insulating with a room-temperature resistance of 105 Ω. An identical annealing treatment on the Y-implanted material produces a superconductor with an onset temperature of 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99714
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  • 16
    Electronic Resource
    Electronic Resource
    High-energy elastic backscattering of helium ions for compositional analysis of high-temperature superconductor thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film technique for measuring the chemical composition of Y-Ba-Cu-O thin films to a few percent accuracy is described. This technique utilizes non-Rutherford backscattering of 8.8 MeV helium ions, which has an increased sensitivity 16O by a factor of 25 over Rutherford backscattering spectrometry. The ratios of the cross sections for He++ scattered from oxygen, copper, and yttrium relative to barium are easily determined using thin-film standards that can be fabricated in any deposition system capable of producing thin-film superconductors. The technique does not require the constant use of standards or accurate charge determination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99761
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  • 17
    Electronic Resource
    Electronic Resource
    Unlubricated friction and wear of an ion beam mixed, nitrogen-implanted Fe50Ti50 surface alloy on AISI 304 stainless steel (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen implantation was observed to significantly improve the dry sliding properties of an ion beam mixed Fe50Ti50 surface alloy on AISI 304 stainless steel. Implantation to the fluence of 1.7×1017 N/cm2 at 50 keV increased the wear resistance but a decreased friction coefficient was obtained only after few hundred cycles at the beginning of the pin-on-disk test. When nitrogen was implanted to the fluence of 3×1017 N/cm2 an improved wear resistance and decreased friction were detected throughout the test of 1000 cycles. In addition, good sliding properties were also found at higher loads in the high fluence, nitrogen-implanted samples. These results differ from those obtained following a nitrogen implantation into Ti-implanted iron or iron-based alloys and are attributed to higher titanium and nitrogen concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98458
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  • 18
    Electronic Resource
    Electronic Resource
    The magnetization density profile of a grain boundary in nickel (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6295-6300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measured atomic and magnetization densities of a nickel twist grain boundary averaged over its lateral dimensions as a function of distance from the interface plane. The presence of a reconstructed interface region (the grain boundary) sandwiched between two single-crystal nickel films that were hot-pressed together was confirmed with grazing incidence x-ray diffraction. From reflection data taken using unpolarized neutrons, the atomic density profile of the grain boundary was determined to be (85±5)% of the bulk density when averaged over twice the grain-boundary width of (8±1) nm. Using this information in conjunction with the reflectivity data taken from the nickel sample with polarized neutrons reflection, the magnetic moment of a nickel atom was found to be between 18% and 52% larger in the twist grain boundary than in the bulk. The enhancement of the magnetic moment at the grain boundary is believed to result from the reduced atomic density of the interface region. Owing to this reduction in density, the magnetization density of the nickel interface is only somewhat enhanced, about 10%, compared to that of bulk nickel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358316
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  • 19
    Electronic Resource
    Electronic Resource
    Orientation selection in thin platinum films on (001) MgO (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6201-6204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Orientation selection in platinum films of ∼20 nm thickness deposited onto (001) MgO substrates by e-beam evaporation was investigated through ion beam channeling and x-ray diffraction. A mixture of crystallites having (111) and (001) orientation was observed in Pt films deposited over a range of substrate temperatures from 25 to 700 °C, with the (111) orientation dominant at low temperatures. The (111) orientation was present in these evaporated films at significantly higher substrate temperatures than reported for Pt films deposited by sputtering or pulsed laser deposition. Both orientations had strongly preferred in-plane orientations: [110] Pt//[110] MgO for the (001)-oriented crystallites and [110]Pt//[110] MgO for the (111). The orientation selection process was rationalized based on the expected relative interfacial energies for these two orientations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359147
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  • 20
    Electronic Resource
    Electronic Resource
    Electron-beam-irradiation effects in bulk YBa2Cu3O7−x (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3167-3171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation effects on thin foils of bulk YBa2Cu3O7−x have been studied in a transmission electron microscope using 100-, 150-, 200-, 250-, and 300-keV electrons at 83 and 300 K. The disordering of the oxygen atoms and vacancies in the O(4) and O(5) sites in the Cu-O planes during irradiation was monitored by measuring the splitting of the (11¯0) diffraction spots in the [001] diffraction pattern. The results show that YBa2Cu3O7−x is insensitive to 100-keV electron irradiation. Irradiation by higher-energy electrons leads to irradiation-induced oxygen disordering of the oxygen atoms and vacancies, mainly by single displacement events. The excellent fit of the data to a disordering model suggests that the displacement threshold energy for oxygen in YBa2Cu3O7−x is around 18 eV and that irradiation-assisted oxygen reordering occurs in YBa2Cu3O7−x at 300 K, but not at 83 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348586
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