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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 233-235 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the growth, ion beam, and photoluminescence characterization of Ga1−xInxAs/GaAs strained-layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of 5.7%. Strain conditions are found by off-normal incidence channeling using the angular scan method. Comparison of the photoluminescence spectrum of the superlattice with theoretical calculations provides strong evidence for the existence of strain-generated electric fields in [111] growth axis strained-layer superlattices.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7−δ (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O2 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760–800 °C for 3–10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2×104 A/cm2 (77 K, B=0). The films had a thickness of 200–700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65–130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1729-1731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated superconducting thin films by ion implanting Y into a base material formed by the coevaporation of BaF2 and Cu. The implantations were carried out at 77 K and resulted in the formation of an amorphous Y-Ba-Cu-F surface layer. Oxygen annealing with the addition of water vapor renders the base material insulating with a room-temperature resistance of 105 Ω. An identical annealing treatment on the Y-implanted material produces a superconductor with an onset temperature of 85 K.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2177-2179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film technique for measuring the chemical composition of Y-Ba-Cu-O thin films to a few percent accuracy is described. This technique utilizes non-Rutherford backscattering of 8.8 MeV helium ions, which has an increased sensitivity 16O by a factor of 25 over Rutherford backscattering spectrometry. The ratios of the cross sections for He++ scattered from oxygen, copper, and yttrium relative to barium are easily determined using thin-film standards that can be fabricated in any deposition system capable of producing thin-film superconductors. The technique does not require the constant use of standards or accurate charge determination.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6201-6204 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Orientation selection in platinum films of ∼20 nm thickness deposited onto (001) MgO substrates by e-beam evaporation was investigated through ion beam channeling and x-ray diffraction. A mixture of crystallites having (111) and (001) orientation was observed in Pt films deposited over a range of substrate temperatures from 25 to 700 °C, with the (111) orientation dominant at low temperatures. The (111) orientation was present in these evaporated films at significantly higher substrate temperatures than reported for Pt films deposited by sputtering or pulsed laser deposition. Both orientations had strongly preferred in-plane orientations: [110] Pt//[110] MgO for the (001)-oriented crystallites and [110]Pt//[110] MgO for the (111). The orientation selection process was rationalized based on the expected relative interfacial energies for these two orientations. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1451-1453 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Loss measurements have been carried out on a cylindrical pillbox cavity whose metallic flat end walls have been replaced by an ordered sequence of high purity sapphire and air dielectric layers. The loss of the TE01 mode at 18.99 GHz was substantially lowered. An improvement in cavity Q for this mode from 8.30×103 to 531×103 was observed. These experimental results closely reproduce two independent theoretical simulations. All measurements were taken at 30 °C.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 419-421 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in the vicinity of 77 K beryllium has a superior specific conductance compared with the nominally excellent metallic conductors aluminum and copper. It is concluded that beryllium should be considered for some conduction applications, despite its well known toxicity problems.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1320-1322 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron field emission from allotropes of carbon (graphite, diamondlike carbon, and diamond) have been reported many times in the literature. This work explores the use of ion irradiation for improving electron field emission from carbon fibers. Carbon fibers have been irradiated with H, C, Ar, and Xe ions. Field emission characteristics have been measured as a function of ion dose. A reversible reduction in the required field for a fixed current level has been observed. The critical dose, Dc, defines the dose corresponding to the lowest field necessary to emit a fixed current (5 μA). The critical dose appears to correlate with the nuclear energy loss (collisions with atoms) of the ion in the carbon fiber. Transmission electron microscopy and parallel electron energy loss spectroscopy analysis indicate an amorphous surface, and an increase in the sp3 content of the fiber surface to 20%–30%. A corresponding decrease in the work function is expected and may account for the improvement in electron emission. © 1997 American Institute of Physics.
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