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  • 1
    Electronic Resource
    Electronic Resource
    Setup for in situ x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3656-3660 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100–720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar2+ ions into a zirconia thin film illustrate the potential of the instrument. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149973
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  • 2
    Electronic Resource
    Electronic Resource
    Vapor-deposited superconducting YBa2Cu3O7−δ lines: Effect of thickness and width on morphology (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1374-1376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lines of different widths and thicknesses of YBa2Cu3O7−δ were prepared on SrTiO3 and compared for signs of morphological dependence on line dimensions. The lines were prepared on (100) SrTiO3 by electron beam (e-beam) coevaporation, e-beam resist lift-off, and annealing in oxygen to 850 °C. Linewidths ranged from 5 to 0.8 μm, and two film thicknesses, 200 nm ("thin'') and 500 nm ("thick''), were prepared. Eddy current measurements showed all samples to be superconducting with transition onset near 95 K. The morphology was found to depend not only on film thickness but also, for finest (≤1 μm) lines, on linewidth. "Thin'' lines of all widths showed nearly no a-type structure, while thick-film lines showed predominantly a-type structure on the surface except for the narrowest lines. Narrowest "thick'' lines, like "thin'' lines, contained mostly c-type structure. The results for thick fine lines suggest that reduced area growth may offer a practical advantage in achieving c-type morphology in patterned YBa2Cu3O7−δ for applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103205
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δ (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle-induced depression of the superconducting critical temperature Tc of YBa2Cu3O7−δ is shown to be directly proportional, over seven orders of magnitude, to the nonionizing energy deposited in the lattice by primary knock-on atoms displaced by incident electrons, protons, and heavy ions. It is concluded that ΔTc is proportional only to the average number of defects produced and can therefore be predicted for any particle, energy, and fluence from a calculation of the nonionizing energy loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102287
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5412-5421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work summarizes results of a simple procedure to incorporate dopants into the near surface region of single-crystal sapphire. We demonstrate the formation of iron-doped and chromium-doped sapphire thin films by solid-phase epitaxial growth. Amorphous alumina films of about 200–350 nm thickness were deposited onto single-crystal sapphire substrates. Fe or Cr ions were introduced into the films during deposition. A post-deposition thermal process was performed in oxidizing ambients at 800–1400 °C to induce epitaxial growth and to incorporate dopants. The epitaxial relationship of the grown film with the substrate was confirmed by both ion channeling and cross-sectional transmission electron microscopy. The growth kinetics were determined by time-resolved reflectivity measurements for different dopant concentrations. Ion channeling angular scans revealed that the Fe or Cr ions are incorporated onto octahedral sites (Al3+ sites) in the corundum structure as expected in equilibrium. External optical transmittance measurements exhibited absorption in the near ultraviolet range associated with the Fe3+ state. The substitution of Cr for Al3+ was also confirmed by the observation of R1 and R2 luminescence lines characteristic of ruby. The doping procedure has potential applications in the fabrication of thin film planar optical waveguides and thin film stress sensors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359722
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352843
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of diamondlike carbon films by high-intensity pulsed-ion-beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5949-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) films were prepared by high-intensity pulsed-ion-beam ablation of graphite targets. A 350 keV, 35 kA, 400 ns beam, consisting primarily of hydrogen, carbon, and oxygen ions was focused onto a graphite target at a fluence of 15–45 J/cm2. Amorphous carbon films were deposited at up to 30 nm per pulse, corresponding to an instantaneous deposition rate greater than 1 mm/s. Electrical resistivities were between 1 and 1000 Ω cm. Raman spectra indicate that diamondlike carbon is present in most of the films. Electron-energy-loss spectroscopy indicates significant amounts of sp3-bonded carbon, consistent with the presence of DLC. Scanning electron microscopy showed most films contain 100 nm features, but micron size particles were deposited as well. Initial tests revealed favorable electron field-emission behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358373
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of YBa2Cu3O7 superconducting films by ion implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1729-1731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated superconducting thin films by ion implanting Y into a base material formed by the coevaporation of BaF2 and Cu. The implantations were carried out at 77 K and resulted in the formation of an amorphous Y-Ba-Cu-F surface layer. Oxygen annealing with the addition of water vapor renders the base material insulating with a room-temperature resistance of 105 Ω. An identical annealing treatment on the Y-implanted material produces a superconductor with an onset temperature of 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99714
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  • 8
    Electronic Resource
    Electronic Resource
    High-energy elastic backscattering of helium ions for compositional analysis of high-temperature superconductor thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film technique for measuring the chemical composition of Y-Ba-Cu-O thin films to a few percent accuracy is described. This technique utilizes non-Rutherford backscattering of 8.8 MeV helium ions, which has an increased sensitivity 16O by a factor of 25 over Rutherford backscattering spectrometry. The ratios of the cross sections for He++ scattered from oxygen, copper, and yttrium relative to barium are easily determined using thin-film standards that can be fabricated in any deposition system capable of producing thin-film superconductors. The technique does not require the constant use of standards or accurate charge determination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99761
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  • 9
    Electronic Resource
    Electronic Resource
    Unlubricated friction and wear of an ion beam mixed, nitrogen-implanted Fe50Ti50 surface alloy on AISI 304 stainless steel (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen implantation was observed to significantly improve the dry sliding properties of an ion beam mixed Fe50Ti50 surface alloy on AISI 304 stainless steel. Implantation to the fluence of 1.7×1017 N/cm2 at 50 keV increased the wear resistance but a decreased friction coefficient was obtained only after few hundred cycles at the beginning of the pin-on-disk test. When nitrogen was implanted to the fluence of 3×1017 N/cm2 an improved wear resistance and decreased friction were detected throughout the test of 1000 cycles. In addition, good sliding properties were also found at higher loads in the high fluence, nitrogen-implanted samples. These results differ from those obtained following a nitrogen implantation into Ti-implanted iron or iron-based alloys and are attributed to higher titanium and nitrogen concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98458
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  • 10
    Electronic Resource
    Electronic Resource
    The magnetization density profile of a grain boundary in nickel (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6295-6300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measured atomic and magnetization densities of a nickel twist grain boundary averaged over its lateral dimensions as a function of distance from the interface plane. The presence of a reconstructed interface region (the grain boundary) sandwiched between two single-crystal nickel films that were hot-pressed together was confirmed with grazing incidence x-ray diffraction. From reflection data taken using unpolarized neutrons, the atomic density profile of the grain boundary was determined to be (85±5)% of the bulk density when averaged over twice the grain-boundary width of (8±1) nm. Using this information in conjunction with the reflectivity data taken from the nickel sample with polarized neutrons reflection, the magnetic moment of a nickel atom was found to be between 18% and 52% larger in the twist grain boundary than in the bulk. The enhancement of the magnetic moment at the grain boundary is believed to result from the reduced atomic density of the interface region. Owing to this reduction in density, the magnetization density of the nickel interface is only somewhat enhanced, about 10%, compared to that of bulk nickel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358316
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