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Setup for in situ x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films (1999)

Grigull, S. ; Foltyn, S. ; Hollander, M. G. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 70 (1999), S. 3656-3660

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100–720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar2+ ions into a zirconia thin film illustrate the potential of the instrument. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1149973

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