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  • 11
    Electronic Resource
    Electronic Resource
    Nanoscale silicon wires synthesized using simple physical evaporation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3458-3460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121665
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  • 12
    Electronic Resource
    Electronic Resource
    Femtosecond time-resolved optical response of phthalocyanine Langmuir–Blodgett film (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4648-4651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of 2,9,16,23-tetra-heptadecylamido-substituted vanadyl phthalocyanine Langmuir–Blodgett film was studied with femtosecond laser pulses. After the excitation into the first electronic excited band, an ultrafast decay due to phonon-exciton coupling greatly affected by temperature was observed. Following this process, exciton-exciton annihilation leads to the recovery of the ground state with a decay time of about 10 ps. The Frenkel exciton theory was employed to give a complete interpretation of the dynamics. An even slower relaxation was also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355915
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  • 13
    Electronic Resource
    Electronic Resource
    Texture and stress of Ag films in Ag/Ti, Ag/Cr bilayers, and self-encapsulated structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7773-7777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of evaporated Ag films prepared on Ti or Cr underlayers before and after encapsulation process has been studied by x-ray diffraction. In addition, the stress state in self-encapsulated Ag/Ti structures has also been investigated using a "sin2 ψ" technique. Silver films deposited on Ti layers exhibit a strong 〈111〉 texture, which is in contrast to the nearly random orientation of Ag films on Cr underlayers. The minimization of interfacial energy with respect to lattice match can account for this underlayer dependence. After an encapsulation process involving Ti reactions in an ammonia ambient, the texture of Ag films in Ag/Ti bilayers is further enhanced. Highly textured Ag films may provide the basis for electromigration-resistant Ag metallization in integrated circuit devices. For the Ag/Ti bilayer structures, a low tensile stress of approximately 61 MPa arising from the nonequilibrium growth during the film deposition is present in the Ag films. This results in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress is produced by the encapsulation process at 600 °C. Most of this stress relaxes during the cooling stage and a residual tensile stress of ∼320 MPa in the film plane was determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365386
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  • 14
    Electronic Resource
    Electronic Resource
    Nonresonant third-order optical nonlinearity of all-carbon molecules C60 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3025-3026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonresonant third-order hyperpolarizability of all-carbon molecules C60 is measured by nanosecond degenerate four-wave-mixing experiment in C60 toluene solution. The value of γ1111 measured is 1.6×10−31 esu, which corresponds to an estimated value of the third-order nonlinear optical susceptibility χ(3)1111E = 3.3 × 10−9 esu for the solid compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351391
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  • 15
    Electronic Resource
    Electronic Resource
    Experiments on space-charge waves in electron beams propagating through a resistive-wall channel (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1699-1709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized longitudinal space-charge waves in a transport channel with a resistive wall are investigated experimentally. The space-charge waves with various pulse widths are generated in electron beams with energies of 3.0–8.5 keV and currents of 30–135 mA, and they are transported through a resistive channel with a resistance of 5–10 kΩ and a length of 1 m. The resistive channel, made of a glass tube with a resistive material coating, is surrounded by a long solenoid which provides the focusing for the beam. The localized space-charge waves are measured with current monitors and energy analyzers at the entrance and exit of the resistive channel, and the wave-amplitude growth and damping rates are determined. The measured results are compared with the theory in the long-wavelength range. For localized waves with short widths, where the long-wavelength approximation is not valid any more, dispersion and distributed capacitance effects on the growth/damping rates are discussed. In addition, preliminary results on the energy width measurements of space-charge waves are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370950
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  • 16
    Electronic Resource
    Electronic Resource
    Femtosecond studies of coherent acoustic phonons in gold nanoparticles embedded in TiO2 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 612-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.15 THz coherent acoustic phonons have been observed in gold nanoparticles embedded in TiO2 thin films by virtue of femtosecond time-resolved transmissivity measurements at room temperature. The generation of these phonons is attributed to the resonant excitation of localized surface plasmon in gold nanoparticles. Their damping time is 55 ps which is acquired by fitting the oscillatory part of time-resolved transmissivity to single exponentially damped cosine function. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371907
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  • 17
    Electronic Resource
    Electronic Resource
    Observation of coherent phonons in silver nanoparticles embedded in BaO thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1806-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three kinds of coherent phonons (0.30, 1.90, and 3.75 THz) have been observed in silver nanoparticles embedded in BaO thin films by means of the femtosecond time-resolved pump-probe technique. The generation of 0.3 THz coherent phonons is attributed to the resonant excitation of localized surface plasmon of silver nanopaticles, and the resonant impulsive stimulated Raman scattering in silver aggregates is responsible for the generation of 1.90 and 3.75 THz coherent phonons. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123092
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  • 18
    Electronic Resource
    Electronic Resource
    Amorphous silica nanowires: Intensive blue light emitters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3076-3078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122677
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  • 19
    Electronic Resource
    Electronic Resource
    Texture and microstructural evolution of thin silver films in Ag/Ti bilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 779-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture and microstructure of thin silver films in Ag/Ti bilayer structures have been characterized as a function of vacuum annealing temperature and time with the use of x-ray diffraction and transmission electron microscopy. A strong preexisting (111) texture in Ag films was further improved upon annealing as evidenced by an increased intensity and narrower distribution of the texture along the film normal. A new (200) texture component was generated after 600 °C annealing; it however had a relatively low intensity when compared to the dominant (111) texture. No abnormal grain growth was observed in annealed Ag films. The texture evolution in all films appeared to complete within the first 15 min annealing, while the microstructure continued to change with additional annealing time. The roles of both surface energy and strain energy in the grain growth were evaluated. A model of the grain growth and texture evolution has been proposed to explain these observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366758
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  • 20
    Electronic Resource
    Electronic Resource
    Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3321-3327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride thin films have been formed in the temperature range of 400–600 °C by annealing Ag/Ti bilayer films on oxidized Si substrates in an ammonia ambient. Rutherford backscattering spectrometry and Auger depth profiling have shown the segregation of Ti at the surface and at interface. Ti diffused out through the silver layer and reacted with ammonia to form a TiN layer that self-encapsulated the silver film. A near-bamboo structure in the encapsulated Ag films was observed using cross-sectional transmission electron microscopy. Such a structure is expected to improve the electromigration resistance of the silver metallization. The kinetics of the Ti-nitride growth was studied by investigating its dependence on time, temperature, and Ag/Ti bilayer thicknesses. We also found that two processes govern the nitridation reaction. A dominant nitridation process takes place initially at fast growth rates. After 15 min anneals the nitride growth can be described by x2=B t, where B is a parabolic rate constant for the growing nitride phase. The parabolic rate constants follow an Arrhenius behavior with an apparent activation energy of ∼0.4 eV. These observations led to further discussion regarding the diffusion mechanism as well as the rate-limiting step. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365641
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