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  • 1
    Electronic Resource
    Electronic Resource
    Effects of Geometric Isomerism and Ligand Substitution in Bifunctional Dinuclear Platinum Complexes on Binding Properties and Conformational Changes in DNA (1995)
    s.l. : American Chemical Society
    Biochemistry 34 (1995), S. 15480-15486 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00047a013
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  • 2
    Electronic Resource
    Electronic Resource
    Nanoscale silicon wires synthesized using simple physical evaporation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3458-3460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121665
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  • 3
    Electronic Resource
    Electronic Resource
    Texture and stress of Ag films in Ag/Ti, Ag/Cr bilayers, and self-encapsulated structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7773-7777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of evaporated Ag films prepared on Ti or Cr underlayers before and after encapsulation process has been studied by x-ray diffraction. In addition, the stress state in self-encapsulated Ag/Ti structures has also been investigated using a "sin2 ψ" technique. Silver films deposited on Ti layers exhibit a strong 〈111〉 texture, which is in contrast to the nearly random orientation of Ag films on Cr underlayers. The minimization of interfacial energy with respect to lattice match can account for this underlayer dependence. After an encapsulation process involving Ti reactions in an ammonia ambient, the texture of Ag films in Ag/Ti bilayers is further enhanced. Highly textured Ag films may provide the basis for electromigration-resistant Ag metallization in integrated circuit devices. For the Ag/Ti bilayer structures, a low tensile stress of approximately 61 MPa arising from the nonequilibrium growth during the film deposition is present in the Ag films. This results in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress is produced by the encapsulation process at 600 °C. Most of this stress relaxes during the cooling stage and a residual tensile stress of ∼320 MPa in the film plane was determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365386
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  • 4
    Electronic Resource
    Electronic Resource
    Experiments on space-charge waves in electron beams propagating through a resistive-wall channel (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1699-1709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized longitudinal space-charge waves in a transport channel with a resistive wall are investigated experimentally. The space-charge waves with various pulse widths are generated in electron beams with energies of 3.0–8.5 keV and currents of 30–135 mA, and they are transported through a resistive channel with a resistance of 5–10 kΩ and a length of 1 m. The resistive channel, made of a glass tube with a resistive material coating, is surrounded by a long solenoid which provides the focusing for the beam. The localized space-charge waves are measured with current monitors and energy analyzers at the entrance and exit of the resistive channel, and the wave-amplitude growth and damping rates are determined. The measured results are compared with the theory in the long-wavelength range. For localized waves with short widths, where the long-wavelength approximation is not valid any more, dispersion and distributed capacitance effects on the growth/damping rates are discussed. In addition, preliminary results on the energy width measurements of space-charge waves are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370950
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of coherent phonons in silver nanoparticles embedded in BaO thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1806-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three kinds of coherent phonons (0.30, 1.90, and 3.75 THz) have been observed in silver nanoparticles embedded in BaO thin films by means of the femtosecond time-resolved pump-probe technique. The generation of 0.3 THz coherent phonons is attributed to the resonant excitation of localized surface plasmon of silver nanopaticles, and the resonant impulsive stimulated Raman scattering in silver aggregates is responsible for the generation of 1.90 and 3.75 THz coherent phonons. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123092
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphous silica nanowires: Intensive blue light emitters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3076-3078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122677
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  • 7
    Electronic Resource
    Electronic Resource
    Texture and microstructural evolution of thin silver films in Ag/Ti bilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 779-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture and microstructure of thin silver films in Ag/Ti bilayer structures have been characterized as a function of vacuum annealing temperature and time with the use of x-ray diffraction and transmission electron microscopy. A strong preexisting (111) texture in Ag films was further improved upon annealing as evidenced by an increased intensity and narrower distribution of the texture along the film normal. A new (200) texture component was generated after 600 °C annealing; it however had a relatively low intensity when compared to the dominant (111) texture. No abnormal grain growth was observed in annealed Ag films. The texture evolution in all films appeared to complete within the first 15 min annealing, while the microstructure continued to change with additional annealing time. The roles of both surface energy and strain energy in the grain growth were evaluated. A model of the grain growth and texture evolution has been proposed to explain these observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366758
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3321-3327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride thin films have been formed in the temperature range of 400–600 °C by annealing Ag/Ti bilayer films on oxidized Si substrates in an ammonia ambient. Rutherford backscattering spectrometry and Auger depth profiling have shown the segregation of Ti at the surface and at interface. Ti diffused out through the silver layer and reacted with ammonia to form a TiN layer that self-encapsulated the silver film. A near-bamboo structure in the encapsulated Ag films was observed using cross-sectional transmission electron microscopy. Such a structure is expected to improve the electromigration resistance of the silver metallization. The kinetics of the Ti-nitride growth was studied by investigating its dependence on time, temperature, and Ag/Ti bilayer thicknesses. We also found that two processes govern the nitridation reaction. A dominant nitridation process takes place initially at fast growth rates. After 15 min anneals the nitride growth can be described by x2=B t, where B is a parabolic rate constant for the growing nitride phase. The parabolic rate constants follow an Arrhenius behavior with an apparent activation energy of ∼0.4 eV. These observations led to further discussion regarding the diffusion mechanism as well as the rate-limiting step. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365641
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  • 9
    Electronic Resource
    Electronic Resource
    Differential reflection dynamics in InAsxP1−x/InP (x≤0.35) strained-multiple-quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4430-4435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the pump-probe technique, we have observed time-resolved differential reflection in InAsxP1−x/InP (x≤0.35) strained-multiple-quantum wells. The experimental results show that barrier height, interface roughness and well width influence strongly the differential reflection dynamics. For samples with the same interface quality and almost the same well width, the delay time of the differential reflection decreases with increasing barrier height, while for the sample with rough interface and narrower wells, the delay time of the differential reflection is much slower, although it has a larger barrier height. To understand the experimental results, we have performed a simulation study of temporal and spatial evolutions of photoexcited carriers in the samples, and the influence of various physics processes on the photoexcited carrier dynamics has been discussed. From the calculated and the measured results, we conclude that carrier diffusion in the cap layer and the barriers plays a dominant role in determining the differential reflection dynamics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367202
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed differential reflection dynamics in In0.518Ga0.492As/InP multiple quantum wells, using the pump–probe technique, and examined the photoluminescence spectra to determine the interface quality for the samples studied. Our results show that the interface quality and well width of the quantum wells (QWs) strongly influence the differential reflection dynamics. The experimental results provide a direct evidence to demonstrate that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to sample surface plays a dominant role in determining the differential reflection dynamics of the QWs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120656
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