ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report results on the properties of GaAs, AlGaAs, and InGaAs materials grown using a new, on-demand hydride gas generator. Low pressure arsine gas is generated from an arsenic containing precursor (KAsH2) by the controlled addition of water as a chemical activator. Both generated and bottled arsine are used to grow GaAs, AlGaAs, and InGaAs structures using atmospheric pressure metalorganic chemical vapor deposition. Using generated arsine, GaAs layers with background carrier concentrations of less than n=3×1013 cm−3 were produced across a growth temperature range of 625–725 °C using a V/III ratio of 30. InGaAs grown at 640 °C with V/III=30 exhibits a background carrier concentration of n=2.5×1014 cm−3 and mobility values of μ300 K=11 350 cm2/V s and μ77 K=71 200 cm2/V s. Photoluminescence measurements show highly resolved exciton spectra using either generated or bottled arsine with donor-bound exciton linewidths as narrow as 0.16 meV full width at half-maximum. Broad area GaAs/AlGaAs laser devices exhibit threshold current densities as low as 195 A/cm2. The results obtained from bulk layer, quantum well structure, and broad area laser device characterization indicate that the quality of materials produced using generated arsine is equivalent or superior to that of materials produced using a high quality bottled arsine source.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107278
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