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  • 11
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Nature 440, 528–534 (2006) During editing to meet Nature’s limits on length, we removed a reference to an earlier paper1 reporting that the prolyl isomerase Pin1 promotes production of Alzheimer’s ...
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  • 12
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient 1.3 and 1.55 μm InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 μm Franz–Keldysh modulator with a (approximately-greater-than)10 dB extinction ratio at 2 V and a 1.55 μm device with a (approximately-greater-than)10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (〈4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1814-1819 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the motion of semiconductors during ion mixing was investigated by studying both the temperature and the atomic mass dependence of moving species in the GexSi1−x/Ni and the GexSi1−x/Pd systems. Ion mixing was performed with 280-keV Ar ions at temperatures between 30 K and room temperature. The atomic mass of the GexSi1−x alloy was adjusted by changing the concentration of Ge in the alloy. In thermally induced reactions, no preferential motion of Si or Ge was observed. During ion mixing, the atomic flux of Si was observed to be enhanced compared to that of Ge. The atomic flux of the sum of Si and Ge to metal decreases with increasing substrate temperature during mixing and with increasing Ge concentration in the GexSi1−x alloy. From the strong atomic mass dependence of the moving species during ion mixing it is concluded that the origin of the motion of semiconductors under ion mixing conditions is due to the effects of secondary recoils.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2300-2306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relative importance between the thermodynamical driving force and kinetics in thermal annealing and ion mixing in the thermally activated regime has not been clarified. To probe the role of the thermodynamical driving force in reactions between metals and silicon, the Co-Si system was chosen for investigation. In general, three silicide phases are formed during thermal annealing of samples consisting of Co thin films deposited on Si substrates, i.e., Co2Si (the first phase to form with a heat of formation, ΔHf=−9 kcal/g atoms), CoSi (ΔHf=−12 kcal/g atoms), and CoSi2 (the last phase to form, with ΔHf=−8.2 kcal/g atoms). Previous experiments have shown that annealing a sample of Si/CoSi/Co converts CoSi into Co2Si instead of a continuous growth of CoSi. This type of reaction is apparently unrelated to the magnitude of the thermodynamical driving force since ΔHf of CoSi is significantly larger than those of Co2Si and CoSi2, but is kinetically restricted instead. Under ion mixing conditions the kinetic restriction is expected to relax due to enhanced atomic mobilities under ion irradiation; the ion-induced reactions should then be driven by thermodynamics; i.e., growth of the phase with the largest ΔHf is favored. In this work, phase formation induced thermally and with ion mixing in the Co-Si system was investigated using Rutherford backscattering spectrometry and x-ray diffraction (Read camera). It was found that in thermal annealing, Co2Si is the first phase to form and Co is the dominant moving species in the formation of Co2Si, in agreement with previous results. In ion mixing, both CoSi and Co2Si are observed to form. At low temperatures, the formation of CoSi dominates. As the substrate temperature is increased, the formation of Co2Si becomes more significant. Co and Si are found to be the dominant moving species in the ion-beam-assisted formation of Co2Si and CoSi, respectively. By introducing the concept of an effective heat of formation, initial phase formation in both ion mixing and thermal annealing can be rationalized in terms of the thermodynamical driving force.
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 625-627 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of solid phase regrowth (SPR)has been used to induce compositional disordering in AlGaAs/GaAs superlattice structures in the temperature range of 400 °C (30 min)–650 °C (30 s) as compared to the conventional diffusion method in the temperature range of 600–850 °C for hours. The SPR process is simple to implement, requiring only thin-film deposition and annealing. The crystal quality as well as the photoluminescence signals emerging from the disordered region generally improve with increasing processing temperature. The simplicity, the low process temperature, and the short process duration of the SPR technique are distinct advantages for optoelectronic applications, especially for self-aligned devices.
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2944-2946 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of low-loss photoelastic waveguides in GaAs/AlGaAs layered structures by thin film reactions is investigated. The waveguides are formed by opening a narrow window stripe, a few microns wide, in an otherwise continuous Ni layer under tension deposited on a semiconductor structure. The local tensile stress induced by the Ni layer in the semiconductor causes the local refractive index to increase, thus providing the guiding mechanism. Annealing the sample at 250 °C for 1 h induced an interfacial reaction between the Ni film and the substrate to form Ni3GaAs. The formation of an interfacial compound stabilizes the stresses, making the stress state independent of the deposition system and technique. Single-mode waveguide propagation losses as low as 1.4 dB/cm at 1.53 μm wavelength have been obtained on annealed waveguides. Further annealing up to 600 °C did not cause degradation in the optical confinement, thus indicating a thermally stable planar waveguide fabricated by this process. Other photoelastic optical devices such as polarizers, splitters, and couplers are also demonstrated.
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1269-1271 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar, low-loss AlGaAs/GaAs waveguides have been fabricated using the solid-phase regrowth (SPR) process. Single-mode waveguide with a propagation loss as low as 1.6 dB/cm have been obtained. This process requires only thin-film deposition and low-temperature short-duration annealing (i.e., 650 °C for 30 s), thus making the SPR method a much simplified technique to induce compositional disordering. Simultaneous electrical isolation and compositional disordering are also demonstrated with the SPR process.
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  • 20
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Materials Chemistry & Physics 38 (1994), S. 195-198 
    ISSN: 0254-0584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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