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  • 11
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
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  • 12
    Electronic Resource
    Electronic Resource
    Crystal structure and magnetism of LaCo13−x−yFexSiy compounds (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 336-341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and magnetic properties of LaCo13−x−yFexSiy compounds were investigated by means of x-ray powder diffraction and magnetization measurements. The substitution of Si for Co induces an order–disorder transition from the cubic NaZn13-type to its tetragonal derivative structure, while the substitution of Fe for Co does not induce such a phase transition. After annealing treatment, the homogeneous range of the cubic phase is narrowed and that of the tetragonal phase is extended. From crystallographic and thermodynamic points of view, the sta- bility of the cubic and the tetragonal phases is discussed. The measured magnetic moment of LaCo13−x−yFexSiy coincides well with the theoretical prediction based on the magnetic valence model. Within the framework of this model, LaCo13−x−yFexSiy compounds can be considered as strong ferromagnets and their magnetic moment can be theoretically predicted. The composition dependence of Curie temperature is discussed within the mean field approximation. At higher iron concentration the decrease of Curie temperature with Fe concentration might be attributed to the increase of the number of antiferromagnetically coupled Fe–Fe pairs and the decrease of the ferromagnetic coupling between transition metal atoms. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362786
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  • 13
    Electronic Resource
    Electronic Resource
    Resistive, magnetic, and structural studies of Tl0.5Pb0.5(Ca1−xMx)Sr2Cu2Oy compounds with M equal to the natural mixture of rare-earth elements (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2029-2031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the resistivity, structural, and magnetic susceptibility measurements for Tl0.5Pb0.5(Ca1−xMx)Sr2Cu2Oy superconductors with M equal to the natural mixture of rare-earth elements and x=0, 0.05, 0.1, 0.2, and 0.3, respectively. The powder x-ray diffraction profile indicates a single-phase, P4/mmm tetragonal crystal structure with a=0.380±0.002 nm and c=1.205±0.002 nm for a Tl0.5Pb0.5(Ca0.9M0.1)Sr2Cu2Oy superconductor. Tc (zero)'s were found to be 79, 91, 101, 97, and 87 K for x=0, 0.05, 0.1, 0.2, and 0.3, respectively. Hc1 of Tl0.5Pb0.5(Ca0.9M0.1)Sr2Cu2Oy was estimated to be around 1.8 kG at 5 K, and Jc about 1.35×103 A/cm2 with a 20 kG applied field at 5 K. The Meissner signal of this sample indicates the Tc onset ∼100 K, and the mass diamagnetic susceptibility −χg at 5 K is 2.52×10−3 cm3/g (field cooled at 100 G).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102339
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  • 14
    Electronic Resource
    Electronic Resource
    Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy-like structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101536
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  • 15
    Electronic Resource
    Electronic Resource
    Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4072-4077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and autocorrelation function analysis. For samples with nominal atomic ratios Mo:Si=1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si=1:2 samples after annealing at 650 °C for 1 h. Multiphases were observed to simultaneously form in samples annealed at 400–500 °C. After 600 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si=1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si-3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period, and annealing conditions. The results are interpreted in terms of the delicate balance among intermixing of constituent atoms, silicide formation, and crystallization of silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361835
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  • 16
    Electronic Resource
    Electronic Resource
    Connexin 26 mutations in hereditary non-syndromic sensorineural deafness (1997)
    [s.l.] : Macmillan Magazines Ltd
    Nature 387 (1997), S. 80-83 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Initially we studied a caucasian pedigree in which both autosomal dominant palmoplantar keratoderma (PPK, in which there is abnormal callusing of palms and soles) and congenital sensorineuronal ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/387080a0
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  • 17
    Electronic Resource
    Electronic Resource
    Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A gallium arsenide film is grown embedded in masked pre-etched wells in silicon vicinal (001) substrates by molecular beam epitaxy. The morphology and crystallinity of the embedded GaAs on Si layers are identical to those of large area GaAs on Si grown on the same wafer, as indicated by the comparison of Nomarski contrast photomicrographs and electron channeling patterns. High-resolution electron microscope images reveal the epitaxial relation of the GaAs/Si interface on the bottom and the sidewall of the wells. On the slope most of the dislocations are restricted to a narrow region near the interface. The same photoluminescent behavior is found for the GaAs deposit in the different silicon environments. This embedded growth technique is suitable for realization of a coplanar GaAs on Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100069
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  • 18
    Electronic Resource
    Electronic Resource
    Magnetic structure and site occupancies in YFe11−xCoxTi (x=1,3,7,9) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2155-2160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal and magnetic structures of the system YFe11−xCoxTi have been investigated by high-resolution neutron powder diffraction for the compositions x=1, 3, 7, and 9. All compounds have the ThMn12 type structure, with space group symmetry I4/mmm. The distribution of the atoms over the independent crystallographic sites was found to be significantly different from random, with a strong preference for Ti to be in the 8i site and Co in the 8j and 8f sites. This behavior can be explained in terms of the enthalpy of formation of binary alloys. The magnetic moments are parallel to the c axis for the compositions x=1, 3, 9, and lie in the a-b plane for x=7. No evidence of additional nuclear or magnetic phase transitions was observed for sample YFe4Co7Ti down to 20 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371023
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  • 19
    Electronic Resource
    Electronic Resource
    A neutron powder diffraction study of the system La2(Co1−xFex)16Ti for x=0.0, 0.2, and 0.4 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1226-1229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nuclear and magnetic structures of La2(Co1−xFex)16Ti have been studied by neutron powder diffraction for the compositions x=0.0,0.2,0.4. The compound crystallizes with the symmetry of space group R3¯m. Site occupancy results show significant departures from a purely statistical distribution, with the Ti atoms located in sites which interact weakly with La, and with the Co atoms occupying preferentially the sites with strong La interaction. These results are consistent with the enthalpies of formation of equiatomic alloys of rare earth and 3d elements. The spin ordering at all compositions and temperatures is ferromagnetic. At room temperature the moments are aligned along the c axis for the compositions x=0.0 and x=0.2, and form an angle of about 57° with c for x=0.4. This tilt angle is a function of temperature and the moment is aligned along c at 11 K, moving gradually towards the a,b plane as the temperature increases. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370875
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  • 20
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288231
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