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  • 1
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    Quasi-Energy Bands of the Dimerized Chain with Alternating Site Energies Driven by ac Field (2001)
    Institute of Physics
    Details
    Publication Date: 2001-03-01
    Print ISSN: 0031-8949
    Electronic ISSN: 1402-4896
    Topics: Physics
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Effect of Antioxidants on the Oxidative Stability of Chicken Breast Meat in a Dispersion System (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : The antioxidant efficiency of ascorbic acid, α-tocopherol, Trolox C, and catechin were evaluated for chicken breast meat in a dispersion system at 37 °C. Peroxidation was induced by adding different kinds of initiators. The initiators exhibited the following order of catalytic action: ascorbic acid/Fe2+ 〉 hemoglobin 〉 Cu+/H2O2 〉 2,2′-azobis (2-amidinopropane) hydrochloride (AAPH). The antioxidant efficiency of the antioxidants tested depended on their phase distribution and their reactivity to the radicals in various initiation systems. Among the antioxidants tested, catechin was the most effective antioxidant for chicken breast meat oxidation under the experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb10632.x
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288231
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  • 5
    Electronic Resource
    Electronic Resource
    Cooling negative-ion beams : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 800-802 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Studies have been conducted to determine the feasibility of using the collisional cooling technique as a means of reducing energy spreads and emittances of sputter-generated negative-ion beams. A gas-filled rf-quadrupole ion cooler, equipped with provisions for decelerating ion beams to sufficiently low energies prior to cooling and reaccelerating them to high energies following the cooling process, has been designed and used to cool O− and F− ion beams with initial energy spreads, ΔE〉10 eV to final energy spreads, ΔE∼2 eV full width half-maximum. Overall transmission efficiencies of ∼14% for F− beams have been obtained. Experimental results show that electron detachment is the major loss mechanism for negative ions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430873
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  • 6
    Electronic Resource
    Electronic Resource
    Theory of lithographically-induced self-assembly (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3971-3973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments show that, when a two-phase fluid confined between parallel substrates is subject to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. It is well known that the total interface energy reduces when the island diameter increases. We show that, under certain conditions, the electrostatic free energy reduces when the island diameter decreases. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. We describe the conditions for electrostatic field to stabilize the island lattice, and analyze an idealized model. The theory suggests considerable experimental control over stable island size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380728
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  • 7
    Electronic Resource
    Electronic Resource
    Mixing effects of light and heavy rare earths in the Laves phase compounds Nd1−xTbxCo2 (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice constant and magnetic properties of compounds Nd1−xTbxCo2 were investigated by x-ray power diffraction and magnetic measurements. The lattice constant and Curie temperature show linear variations with the Tb concentration, while the saturation moment exhibits an anomaly at a critical concentration xc(approximate)0.33. The compounds exhibit a field-induced metamagnetic transition from a weak ferrimagnetism to a strong ferrimagnetism in the vicinity of xc. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490633
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  • 8
    Electronic Resource
    Electronic Resource
    Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized edge-incident photovoltage spectroscopy (EPVS) and normal-incident reflectance (NIR) studies are performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. In addition to the interference features related to the properties of the mirrors stacks, in the NIR spectrum only the Fabry–Pérot cavity mode is clearly visible, while the polarized EPV spectra are used to identify the wavelength of fundamental and higher-order transitions from the quantum wells (QWs) in the active region. By comparing the experimental results with theoretical calculations, we are able to ascertain the Al composition, structure parameters, and material quality of the QWs in the VCSEL active regions. We demonstrate the potential of polarized EPVS for the contactless and nondestructive characterization of VCSELs at room temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445463
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  • 9
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3227-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C–1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418027
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  • 10
    Electronic Resource
    Electronic Resource
    Stable island arrays by height-constrained Stranski–Krastanov growth (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3251-3253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the Stranski–Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both surface energy, and elastic energy drive the islands to coarsen: some islands enlarge and others shrink, keeping the total island volume constant. The islands produced this way are usually uneven in size and spacing. Motivated by several related studies, we suggest that stable, uniform islands should form when a stiff ceiling is placed at a small gap above the film. After contacting the ceiling, the islands are constrained to grow laterally and remain coherent with the substrate, preventing further stress relaxation. In fact, we show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. On the other hand, the total surface energy decreases as the islands coarsen. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. We estimate the equilibrium island size by analyzing an idealized model.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415403
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