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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2923-2925 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3–Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth. © 1998 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4261-4263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5592-5594 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 eV lower SB height (SBH) than that without hydrogen. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and especially of RBA influences the SBH. We interpret the above effect in terms of an interaction between hydrogen and metal-semiconductor interface states.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7615-7617 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680–720 nm for various samples of different substrate parameters and remain stable upon aging in air or γ irradiation; as-etched (∼20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the γ-irradiated samples show an isotropic g=2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620–830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.
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  • 15
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudo-Hall effect (PHE) in Ni thin-film squares of 1–5 μm size is measured with a constant current through two leads along one diagonal of the square and the voltage output from leads along the other diagonal. The PHE voltage in response to an in-plane magnetic field depends on the square size and field orientation. The minimum PHE voltage at low field is close to zero only with the 2 μm square containing four symmetrical closure domains leading to a 600% relative change in PHE voltage. The PHE signal is found the largest when the field direction is along the square side while the smallest when along the square diagonal. © 1997 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 22 (2002), S. 0 
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 Although monumental efforts have been made to define the action sites of cough, the importance of neurotransmitter systems in the cough reflex has received limited attention. We studied the roles for four major neurotransmitters [acetylcholine, histamine, serotonin (5-hydroxytryptamine, 5-HT) and dopamine] in the modulation of the cough reflex. 2 Atropine (muscarinic cholinergic blocking agent), pyrilamine maleate (PM, histamine H1 blocker), cimetidine (histamine H2 blocker), 8-hydroxy-2-(di-n-propylamino)-tetralin (8-OH-DPAT, specific 5-HT1A receptor agonist) and SCH-23390 (selective dopamine D1 receptor antagonist) were examined on the cough response to inhaled capsaicin in conscious guinea-pigs. 3 All the drugs significantly decreased the number of capsaicin-induced coughs in a dose-dependent manner. To compare the sensitivity of these drugs on cough response, we calculated the effective doses for 50% inhibition of cough (ED50) when the animals were exposed to 3 × 10−4 m capsaicin. The ED50 values were 0.03 μm kg−1 for atropine, 0.2 μm kg−1 for 8-OH-DPAT, 6.2 μm kg−1 for SCH-23390, 8.5 μm kg−1 for PM and 13.9 μm kg−1 for cimetidine. 4 These findings indicated that all these four neurotransmitters may be involved in the regulation of the cough reflex. Multiple changes of these neurotransmitters in disorders of the central nervous system might synergically affect the cough reflex.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5632-5634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance transient measurements under strong light illumination. This new trap is shallower than the DX center associated with Si impurity in that its emission and capture activation energies are equal to 0.20±0.05 and 0.17±0.05 eV, respectively. Its maximum concentration is comparable to the concentration of the DX center. Possible origins of this new trap and its relationship to the DX center are discussed.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 536-538 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Having been exposed to hydrogen plasma, Te-doped GaAs wafers were deposited with metal Ti, to form Ti/n-GaAs Schottky barrier diodes (SBD). It was found that due to hydrogenation the Schottky barrier height (SBH) of the SBD decreases from 0.76 to 0.58 eV and the effective Richardson constant A** decreases from 11 to 0.03 A/cm2/K2. Annealing the hydrogenated SBD at different reverse biases at 100 °C produces SBHs that have a one-to-one correlation with the biases of reverse-bias annealing (RBA), i.e., the SBH can be controlled, within the range 0.58–0.74 eV, by the bias of RBA. When the reverse bias is equal to or larger than 3 V, the SBH and the effective Richardson constant of the hydrogenated SBDs after RBA are very near to those of SBDs without hydrogenation. This means that a RBA with a bias higher than a critical value, 3 V in our case, can remove the effects of hydrogenation, but if the SBD is annealed again without a bias at 100 °C for 1 h or more, its SBH and effective Richardson constant recover their hydrogenated values. The main experimental facts can be explained qualitatively by a simple theoretical model.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5751-5753 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction has been used to study the magnetic fluctuations and long range order of the Dy ions in single crystals of superconducting DyBa2Cu3O7. The temperature dependence of the rod of scattering, characteristic of 2D behavior, has been measured above and below the 3D Néel temperature (TN (approximately-equal-to) 0.9 K). This rod intensity is observed to increase as the temperature decreases until TN is reached, and then the intensity decreases rapidly below TN. The 2D magnetic correlation length, which is obtained from measurements of the width of the rod, grows continuously with decreasing temperature, then reaches a resolution-limited maximum at the Néel temperature when long range magnetic order sets in. At low T, two separate types of simple 3D antiferromagnetic structures are found, one characterized by a wave vector of (1/2 1/2 0), and the other by (1/2 1/2 1/2). We believe the two types of order occur because the (dipolar) energies for these two configurations are nearly identical. This behavior is analogous to the 2D and 3D magnetic order of Er observed in ErBa2Cu3O7.
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2371-2373 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (103) fiber-textured SrBi2Nb2O9 thin films have been grown on Pt-coated Si substrates using a SrRuO3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO3 grains on (111) Pt grains and in turn (103) SrBi2Nb2O9 grains on (111) SrRuO3 grains. The films exhibit remanent polarization values of 9 μC/cm2. The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures. © 2002 American Institute of Physics.
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