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  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced heating of nanocrystals embedded in glass matrices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5963-5966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced heating of nanocrystals embedded in silicate glass matrices has been studied by photoluminescence and Raman scattering. No nonequilibrium optical phonons were found both for cw and 150-ps-long laser pulses in contrast to bulk samples. The measured laser-induced temperature rise in one sample where the nanocrystal radii are ∼5 nm was found to be in quantitative agreement with a nonlinear theory proposed by Lax for bulk semiconductors. However, in another sample where the nanocrystal radii are only 3 nm, the observed temperature rise at high laser powers was significantly higher than the theoretical prediction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363592
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  • 2
    Electronic Resource
    Electronic Resource
    An analysis of temperature dependent photoluminescence line shapes in InGaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1697-1699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122249
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  • 3
    Electronic Resource
    Electronic Resource
    Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped AlxGa1−xAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5632-5634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance transient measurements under strong light illumination. This new trap is shallower than the DX center associated with Si impurity in that its emission and capture activation energies are equal to 0.20±0.05 and 0.17±0.05 eV, respectively. Its maximum concentration is comparable to the concentration of the DX center. Possible origins of this new trap and its relationship to the DX center are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343672
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  • 4
    Electronic Resource
    Electronic Resource
    Selective excitation and thermal quenching of the yellow luminescence of GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3273-3275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125322
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  • 5
    Electronic Resource
    Electronic Resource
    What determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN? (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2500-2502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the 2.8 eV blue luminescence (BL) in heavily Mg-doped p-GaN via resonant excitation with a tunable blue dye laser. The dependence of the BL on the excitation photon energy (Eex) is unlike that of the yellow luminescence found in n-type GaN. An Urbach-type band tail, with Urbach parameter of 33 meV is observed in the vicinity of the BL energy. We propose that the peak energy of the BL marks the transition from localized states to delocalized states within this band tail. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367904
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  • 6
    Electronic Resource
    Electronic Resource
    Pressure dependence of Schottky barrier height at the Pt/GaAs interface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of −0.26 meV/kbar2. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100045
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice relaxation of pressure-induced deep centers in GaAs:Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep centers induced by hydrostatic pressure in GaAs:Si have been studied by deep level transient spectroscopy and constant temperature capacitance transient techniques. The capture behavior of these centers has been studied in detail and found to be consistent with the multiphonon emission theory. The pressure coefficients of the ionization energy and the barrier height are consistent with the large lattice relaxation model proposed by D. V. Lang and R. A. Logan [Phys. Rev. Lett. 39, 635 (1977)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98437
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  • 8
    Electronic Resource
    Electronic Resource
    Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2846-2854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a detailed optical study of emission from a series of GaInP (ordered)/GaAs heterostructures. Some of these structures contain one or two thin (∼2 nm) layers of GaP between the GaInP and GaAs layers. A so-called "deep emission" band at 1.46 eV is observed in all our samples. However, at high excitation power, an emission above the band gap of GaAs (previously identified as quantum well emission) emerges only in structures where GaP layers are inserted on both sides in between the GaAs well and its GaInP barriers. From the pressure dependence we have identified the deep emission peak as due to donor–acceptor pair transitions at the GaAs/GaInP interface. The insertion of GaP layers between the GaInP (ordered) and GaAs layers helps to suppress the defects which contribute to this deep emission. By applying pressure to the sample which exhibits quantum well emission we have determined its band alignments. We show that the GaP layers form two effective barriers for confining electrons within the GaAs well. However, the magnetic field dependence of the quantum well emission reveals that the electrons form only a quasi-two-dimensional gas inside the GaAs well. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368426
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  • 9
    Electronic Resource
    Electronic Resource
    Addendum: Deep emission band at GaInP/GaAs interface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3630-3632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365686
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  • 10
    Electronic Resource
    Electronic Resource
    Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1195-1197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100017
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