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  • 11
    Electronic Resource
    Electronic Resource
    Instability of field emission from silicon covered with a thin oxide due to electron trapping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3703-3707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the method for the derivation of the Fowler–Nordheim equation, a relatively simple expression for field emission from silicon covered with a thin oxide is presented. The current flows from silicon through the thin oxide during field emission. Some of the electrons flowing through the thin oxide may be captured by the electron traps within it. A model has been developed on the assumption that only the electron trapping within the oxide is considered. The model is successfully applied to explain the instability of field emission from the oxide-covered silicon. The model is also compared with available experiments, and good qualitative agreement is achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361202
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  • 12
    Electronic Resource
    Electronic Resource
    Field emission from a silicon surface potential well through a thin oxide (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6770-6774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum well arises because band bending of silicon confines the electrons to a narrow surface region during field emission. Field emission from the surface potential well of silicon covered with a thin oxide layer is modelled using a conduction band effective potential and effective mass of the oxide. Based on an exact solution of the Schrödinger equation under the application of a linear potential field, the emission current density is represented by an Airy function. The results show that the existing thin oxide always reduces the emission current and the standard Fowler–Nordheim plot gives the two distinct linear regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360501
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  • 13
    Electronic Resource
    Electronic Resource
    Field emission from surface states of silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7589-7594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission from a single level surface state is modelled and numerically estimated. Field emission current from the surface state is dominant at low fields while field emission current from the conduction band is dominant at high fields due to not enough electrons being supplied for the surface state. The field emission Fowler–Nordheim plot shows no linearity. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365304
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  • 14
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of Hexapod-Shaped Tetragonal-Phase Barium Titanate Single Crystals (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Hexapod-shaped tetragonal-phase BaTiO3 single crystals have been synthesized using a simple hydrothermal method. The effects of alkali concentration, precursors, and temperature on the morphology are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.tb20099.x
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  • 15
    Electronic Resource
    Electronic Resource
    Field emission from a silicon surface-potential well based on an Airy function approach (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1254-1258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of a silicon surface can be changed significantly when an intense electric field is applied to the surface. The difference of the field emission between metal and silicon are discussed. The quantum well arises when band bending of silicon confines the electrons to a narrow surface region. A general boundary condition for the study of field emission from silicon is presented within the framework of zero emitted current approximation. A theoretical study of the field-emission current from silicon is given based on an exact solution of the Schrödinger equation under the application of a linear potential field. The presented approach is obviously valid for treating field emission from a silicon surface-potential well. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360366
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  • 16
    Electronic Resource
    Electronic Resource
    Biased-voltage controlled thinning for bonded silicon-on-insulator wafers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2990-2991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for the preparation of bonded and etch-back silicon-on-insulator is presented and demonstrated in which the surface of the to be thinned silicon wafer near the oxide is biased to inversion, so the bulk of this silicon wafer can be removed by anodic etching using the depletion layer as an etch stop. The high etching selectivity between the bulk silicon wafer and the depletion layer makes it possible to produce a micron/submicron-thick active silicon layer with good thickness uniformity across a 3 in. silicon-on-insulator wafer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114253
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  • 17
    Electronic Resource
    Electronic Resource
    Preparation and Photoluminescence of Partially Filled ZnO Microtubes Using Block Copolymers (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Partially filled ZnO microtubes were synthesized in large scale using block copolymers. The growth mechanism of this unique construction is proposed on the basis of adsorption of block copolymers on {0002} plane of wurtzite ZnO. The photoluminescence property of these unique ZnO microtubes is also studied using a Xe lamp as the excitation source at room temperature. Blue emission band at 425 nm is a much stronger ultraviolet emission band, which is due to laminar structure of ZnO microtubes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00264.x
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  • 18
    Electronic Resource
    Electronic Resource
    Molten Salt Synthesis of Acicular Ba2NaNb5O15 Seed Crystals (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Well-developed acicular Ba2NaNb5O15 (BNN) seed crystals have been successfully prepared by the reaction between BaCO3, Nb2O5 and molten NaCl salt. The effects of the calcination temperature, time, and weight ratio of the oxide mixture to salt on the morphology of BNN particles were investigated. Uniform acicular seeds with high aspect ratio could be achieved at 1200°C for 4 h with the salt-to-oxide mixture of 2:1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00058.x
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  • 19
    Electronic Resource
    Electronic Resource
    Effect of Adding Carbon Nanotubes on Microstructure, Phase Transformation, and Mechanical Property of BaTiO3 Ceramics (2005)
    Malden, USA : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Analyses on phase transformation and stress in the carbon nanotube (CNT)/BaTiO3 composites were performed in this paper. The hexagonal phase was found to be stabilized at room temperature after adding CNTs, and could be attributed to the high compressive stress existing in the BaTiO3 grain boundary and CNT/BaTiO3 interface. These stresses are estimated and calculated through X-ray diffraction, Raman spectra, and the modified Selsing model. Moreover, this high stress positively enhanced the toughness of CNT/BaTiO3 composites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00616.x
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  • 20
    Electronic Resource
    Electronic Resource
    Dispersion of Chopped Short Fibers in Production of Fibers-Reinforced Glass-Ceramic Matrix Composites (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 164-165 (July 1998), p. 23-26 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/45/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.164-165.23.pdf
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