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  • 11
    Electronic Resource
    Electronic Resource
    Evaluation of silicon-on-insulator substrates using photoconductive frequency resolved spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6754-6758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe here the application of photoconductive frequency resolved spectroscopy to determine excess carrier lifetime distributions and carrier kinetics in SIMOX (separation by implanting oxygen) material. In order to evaluate the influence of the implant and anneal processes on the quality of the silicon overlayer we have also analyzed unprocessed bulk silicon, high temperature annealed bulk silicon and as-implanted SIMOX material. Our photoconductive frequency resolved spectroscopy results reveal that the SIMOX layers have a higher density of defects than standard device quality silicon substrates. Characteristic parameters of the dominant traps in these materials have been obtained from Arrhenius plots of the lifetime distributions. The defects found in these SIMOX layers are shown to be formed during the high temperature anneal stage of the material production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355073
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  • 12
    Electronic Resource
    Electronic Resource
    Optical characterization of thermal mixing in quantum wells and heterostructures using a Green's function model (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7581-7584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple Green's function model of interface mixing in quantum wells that provides exact quantitative solutions for real structures. Examples are given of several important low-dimensional heterostructures. The model enables the energy of the band-edge optical transition to be predicted as mixing proceeds, so that optical characterization techniques such as photoluminescence or absorption provide a powerful tool for studying mixing and obtaining interdiffusion constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347526
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  • 13
    Electronic Resource
    Electronic Resource
    Superstrained superlattices: A processing approach (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 462-463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer semiconductor heterostructures produced by molecular-beam epitaxy or metalorganic chemical vapor deposition growth are limited in thickness by relaxation producing dislocations, if a critical thickness tc is exceeded. We propose that, for a given thickness, strain values up to twice as large may be induced by post-growth processing with selective diffusion of the elemental constituents of the heterostructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343851
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  • 14
    Electronic Resource
    Electronic Resource
    Laminated gaskets for absorption and electrical measurements in the diamond anvil cell (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5760-5763 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed gaskets laminated from two layers of steel both for optical absorption and for electrical measurements in the diamond anvil cell. For absorption, these gaskets provide masking around the sample, avoiding the need for imaging of the gasket hole. For electrical measurements, laminated gaskets avoid the need for specially prepared diamonds as the feedthrough wires are not in contact with the anvils. Using argon as a pressure medium, both techniques have been used up to about 50 kbar at 300 and at 10 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143359
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  • 15
    Electronic Resource
    Electronic Resource
    Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3973-3977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge termination of Schottky barrier diodes has been achieved using 30 keV Ar+ ions implanted at a dose of 1×1015 cm−2. The reverse-bias leakage current is reduced by 2 orders of magnitude following postimplant annealing at a temperature of 600 °C. The thermal evolution of the implantation induced defects was monitored using positron annihilation spectroscopy and deep-level transient spectroscopy. Two distinct defect regions are observed using the positron technique. The depth of the first is consistent with the range of the implanted Ar+ ions and consists of clustered vacancies. The second extends to ∼250 nm, well beyond the range of the incident ions, and is dominated by point defects, similar in structure to Si–C divacancies. An implant damage related deep level, well defined at Ec−Et=0.9 eV, is observed for both the as-implanted and the 600 °C annealed sample. The effect of annealing is a reduction in the concentration of active carrier trapping centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372443
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  • 16
    Electronic Resource
    Electronic Resource
    Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1678-1683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of silicon on insulator structures obtained by single and multiple implants by means of Raman scattering and photoluminescence spectroscopy is reported. The Raman spectra obtained with different excitation powers and wavelengths indicate the presence of a tensile strain in the top silicon layer of the structures. The comparison between the spectra measured in both kinds of samples points out the existence in the multiple implant material of a lower strain for a penetration depth about 300 nm and a higher strain for higher penetration depths. These results have been correlated with transmission electron microscopy observations, which have allowed to associate the higher strain to the presence of SiO2 precipitates in the top silicon layer, close to the buried oxide. The found lower strain is in agreement with the better quality expected for this material, which is corroborated by the photoluminescence data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349536
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  • 17
    Electronic Resource
    Electronic Resource
    Amorphous-iron disilicide: A promising semiconductor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1438-1440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 °C. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400760
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  • 18
    Electronic Resource
    Electronic Resource
    Ion beam synthesized Ru2Si3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1282-1283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the synthesis of the semiconductor Ru2Si3 by ion implantation into a silicon substrate. The formation of this compound has been confirmed by x-ray measurements and electron diffraction. The absorption coefficient has been determined directly by optical transmission measurements. The band gap is found to be direct with a value in the region of 0.9 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124668
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  • 19
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong room-temperature photoluminescence (PL) peaks of Er3+ (4I13/2→4I15/2) ions at ∼1.535 μm are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 °C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90±10 μs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124324
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  • 20
    Electronic Resource
    Electronic Resource
    A deep semiconductor defect with continuously variable activation energy and capture cross section (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 277-279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level with a continuously varying activation energy and capture cross section has been observed in CdS/CdTe thin-film solar cells. Given that the activation energy and capture cross section of a level are usually considered to be a unique identifier or signature for a particular deep level, this has important implications for the application of deep-level transient spectroscopy and related techniques for the characterization of deep levels in this and similar systems. We believe this phenomenon explains the well-known but poorly understood efficacy of CdCl2 treatment for CdS/CdTe thin solar cells. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124347
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