ISSN:
1432-0630
Keywords:
PACS: 81.15.Fg; 78.30-j; 61.10-i
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. In this work, the synthesis of Bi12SiO20 thin films by pulsed laser deposition on silicon substrates is reported. The structure of the films has been investigated by Raman spectroscopy and X-ray diffraction. The thicknesses and complex refractive index have been determined by reflectivity measurements performed in situ during the growth process. The surface morphology was investigated by scanning electron microscopy. Highly oriented crystalline thin films were grown for substrate temperatures of 600 °C. The thermal annealing at 700 °C of the amorphous films deposited at substrate temperatures of 100–300 °C led to the formation of the eulytite crystalline phase (Bi4(SiO4)3), whose Raman peaks are also reported.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051565
Permalink