Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1951-1953
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357653
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